Ampleon-BLC9G20LS-120VTY
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BLC9G20LS-120VT
Power LDMOS transistor
Rev. 2 — 5 July 2018
Product data sheet
1. Product
profile
1.1 General
description
120 W LDMOS power transistor with enhanced video bandwidth for base station
applications at frequencies from 1805 MHz to 1995 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Test signal
f
I
Dq
V
DS
P
L(AV)
G
p
η
D
ACPR
5M
(dBc)
31
[1]
(MHz)
(mA)
700
(V)
(W)
(dB) (%)
2-carrier W-CDMA
1805 to 1880
28
30
18.5 31
[1]
T
e
st
signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features
and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
Designed for broadband operation (1805 MHz to 1995 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
1805 MHz to 1995 MHz frequency range
BLC9G20LS-120VT
Power LDMOS transistor
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
4
6
1
2
5
3
7
1, 4, 5
2
gate
[1]
3
source
2
4
video decoupling
video decoupling
n.c.
3
5
aaa-003884
6
7
n.c.
[1] Connected
to flange.
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLC9G20LS-120VT
–
air cavity plastic earless flanged package; 6 leads
SOT1271-2
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
–
Max
65
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
V
GS
T
stg
6
65
–
+13
V
+150
C
[1]
T
j
225
C
[1] Continuous
use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal
characteristics
Table 5.
Symbol Parameter
R
th(j-c)
thermal resistance from junction to case
T
case
= 80
C; P
L
= 30 W
Thermal characteristics
Conditions
Typ
Unit
0.47 K/W
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
2 of 15
BLC9G20LS-120VT
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
°
C per section, unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ Max
Unit
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 1.2 mA
65
–
–
V
V
GS(th)
V
GSq
I
DSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
V
DS
= 10 V; I
D
= 120 mA
1.5
1.9 3.1
V
V
DS
= 28 V; I
D
= 700 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 3.75 V;
–
–
–
2.2
–
–
V
2.8
–
A
A
I
DSX
drain cut-off current
25
V
DS
= 10 V
I
GSS
g
fs
gate leakage current
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 6 A
–
–
–
–
280
–
nA
S
forward transconductance
4.3
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 4.2 A
0.12 –
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %
probability on the CCDF; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 700 mA; T
case
= 25
°
C; unless otherwise specified; in a water
cooled class-AB test circuit.
Symbol Parameter
Conditions
Min
Typ
Max Unit
G
p
power gain
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
17.8 18.5
–
dB
%
D
drain efficiency
input return loss
29
–
31
–
RL
in
14
31
9
29
dB
dBc
ACPR
5M
adjacent channel power ratio (5 MHz)
P
L(AV)
= 30 W
–
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; RF performance at V
DS
= 28 V; I
Dq
= 700 mA; T
case
= 25
°
C;
unless otherwise specified; in a class-AB test circuit at a frequency of 1877.5 MHz.
Symbol Parameter
Conditions
P
L(AV)
= 59 W
P
L(AV)
= 59 W
Min
4.00
145
Typ
4.67
172
Max Unit
PAR
O
P
L(M)
output peak-to-average ratio
peak output power
–
–
dB
W
7. Test
information
7.1 Ruggedness
in class-AB operation
The BLC9G20LS-120VT is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 700 mA; P
L
= 100 W (CW); f = 1805 MHz.
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
3 of 15
BLC9G20LS-120VT
Power LDMOS transistor
7.2 Impedance
information
Table 9.
Typical impedance of device
Measured load-pull data of device; I
Dq
= 700 mA; V
DS
= 28 V; pulsed CW (t
p
= 100
μ
s;
δ
= 10 %).
[1]
[1]
[2]
[2]
[2]
f
Z
S
(
Ω
)
Z
L
P
L
η
D
G
p
(MHz)
(
Ω
)
(W)
(%)
(dB)
Maximum power load
1805
1840
1880
1930
1960
1990
1.1
j5.7
1.4
j6.2
1.8
j6.7
2.7
j7.8
3.8
j8.4
5.4
j9.1
1.3
j2.9
1.3
j2.9
1.3
j2.9
1.3
j3.2
1.3
j3.2
1.3
j3.2
189.6
191.7
189.9
185.6
182.3
180.4
61.8
63.1
61.6
61.3
61.2
61.6
15.7
15.8
16.0
16.0
16.5
16.7
Maximum drain efficiency load
1805
1840
1880
1930
1960
1990
1.1
j5.7
1.4
j6.2
1.8
j6.7
2.7
j7.8
3.8
j8.4
5.4
j9.1
2.6
j1.7
2.6
j1.7
2.2
j1.8
2.2
j1.8
2.0
j2.1
2.0
j2.1
129.2
127.3
133.3
123.5
135.1
129.5
73.6
74.7
74.2
72.8
72.1
71.8
18.3
18.6
18.5
19.0
18.8
19.2
[1] Z
S
and Z
L
defined in
Figure 1
.
[2] At
3 dB gain compression.
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLC9G20LS-120VT
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
4 of 15
BLC9G20LS-120VT
Power LDMOS transistor
7.3 Test
circuit
50 mm
50 mm
C5
C1
C2
R1
C8
C11
C9
C10
C4
C3
60 mm
C7
C6
amp00319
Printed-Circuit Board (PCB): Rogers RO4350 with a thickness of 0.76 mm. See
T
a
ble 10
for a list
of components.
Fig 2.
Component layout
Table 10.
List of components
See
Figure 2
for component layout.
Component
Description
Value
Remarks
Murata
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
R1
multilayer ceramic chip capacitor
4.7
F
,
1
00 V
multilayer ceramic chip capacitor
43 pF
multilayer ceramic chip capacitor
1.3 pF
multilayer ceramic chip capacitor
2.7 pF
multilayer ceramic chip capacitor
4.7
F
,
1
00 V
multilayer ceramic chip capacitor
4.7
F
,
1
00 V
multilayer ceramic chip capacitor
1.5 pF
multilayer ceramic chip capacitor
43 pF
multilayer ceramic chip capacitor
220 nF
multilayer ceramic chip capacitor
4.7
F
,
1
00 V
ATC 800A
ATC 800A
ATC 800A
Murata
Murata
ATC 800A
ATC 800A
Murata
Murata
electrolytic capacitor
chip resistor
470
F
,
6
3 V
4.7
SMD 0805
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
5 of 15
BLC9G20LS-120VT
Power LDMOS transistor
7.4 Graphical
data
7.4.1 Pulsed
CW
amp00320
amp00321
22
20
18
16
14
60
50
40
30
20
10
0
G
η
D
(d%)
p
(dB)
(3)
(2)
(1)
(3)
(2)
(1)
0
20
40
60
80 100
120 140 160
0
20
40
60
80 100
120 140 160
(W)
P
(W)
P
L
L
V
DS
= 28 V; I
Dq
= 700 mA; t
p
= 100
s;
= 10 %.
V
DS
= 28 V; I
Dq
= 700 mA; t
p
= 100
s;
= 10 %.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 3.
Power gain as a function of output power;
typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
6 of 15
BLC9G20LS-120VT
Power LDMOS transistor
7.4.2 IS-95
amp00322
amp00323
20
19
18
17
16
15
14
50
40
30
20
10
0
G
η
D
(d%)
p
(dB)
(3)
(2)
(1)
(3)
(2)
(1)
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
V
DS
= 28 V; I
Dq
= 700 mA.
V
DS
= 28 V; I
Dq
= 700 mA.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 5.
Power gain as a function of output power;
typical values
Fig 6.
Drain efficiency as a function of output power;
typical values
amp00324
amp00325
-20
885k
(dBc)
-30
-20
ACPR
ACPR
1980k
(dBc)
-30
-40
-50
-60
-70
-80
-40
-50
-60
-70
-80
(1)
(2)
(3)
(1)
(2)
(3)
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
V
DS
= 28 V; I
Dq
= 700 mA.
V
DS
= 28 V; I
Dq
= 700 mA.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 7.
Adjacent channel power ratio (885 kHz) as a
function of output power; typical values
Fig 8.
Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
7 of 15
BLC9G20LS-120VT
Power LDMOS transistor
amp00326
11
9
PA
R
R
(dB)
7
(3)
(2)
(1)
5
3
0
20
40
60
80
(w)
100
P
L
V
DS
= 28 V; I
Dq
= 700 mA.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 9.
Peak-to-average power ratio as a function of output power; typical values
7.4.3 1-Carrier
W-CDMA
amp00327
amp00328
20
19
18
17
16
15
14
50
40
30
20
10
0
G
η
D
(d%)
p
(dB)
(1)
(2)
(3)
(3)
(2)
(1)
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
V
DS
= 28 V; I
Dq
= 700 mA.
V
DS
= 28 V; I
Dq
= 700 mA.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 10.
Power gain as a function of output power;
typical values
Fig 11.
Drain efficiency as a function of output power;
typical values
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
8 of 15
BLC9G20LS-120VT
Power LDMOS transistor
amp00329
amp00330
-20
5M
8
7
6
5
4
3
ACPR
(dBc)
PA
R
R
(dB)
-30
(1)
(2)
(3)
(3)
(2)
(1)
-40
-50
-60
0
20
40
60
80
(W)
100
0
20
40
60
80
P (w)
L
100
P
L
V
DS
= 28 V; I
Dq
= 700 mA.
V
DS
= 28 V; I
Dq
= 700 mA.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 12.
Adjacent channel power ratio (5 M) as a
function of output power; typical values
Fig 13.
Peak-to-average power ratio as a function of
output power; typical values
7.4.4 2-Carrier
W-CDMA
amp00331
amp00332
20
50
G
η
D
(d%)
p
(dB)
19
18
17
16
15
14
40
30
20
10
0
(1)
(2)
(3)
(3)
(2)
(1)
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
V
DS
= 28 V; I
Dq
= 700 mA; 5 MHz spacing.
V
DS
= 28 V; I
Dq
= 700 mA; 5 MHz spacing.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 14.
Power gain as a function of output power;
typical values
Fig 15.
Drain efficiency as a function of output power;
typical values
BLC9G20LS-120VT
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
9 of 15
BLC9G20LS-120VT
Power LDMOS transistor
amp00333
amp00334
-10
5M
26
22
18
14
10
ACPR
(dBc)
RL
in
(dB)
-20
(2)
(1)
(2)
(3)
-30
-40
-50
(3)
(1)
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
V
DS
= 28 V; I
Dq
= 700 mA; 5 MHz spacing.
V
DS
= 28 V; I
Dq
= 700 mA; 5 MHz spacing.
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
(1) f
= 1810 MHz
(2) f
= 1840 MHz
(3) f
= 1875 MHz
Fig 16.
Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 17.
Input return loss as a function of output
power; typical values
7.4.5 2-Tone
VBW
The BLC9G20LS-120VT shows 85 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 1805 MHz to 1880 MHz
band at V
DS
= 28 V and I
Dq
= 700 mA.
amp00335
-10
IMD
(dBc)
-20
(1)
(2)
IMD3
-30
(1)
(2)
IMD5
-40
-50
(1)
(2)
IMD7
-60
-70
2
3
1
10
10
10
carrier spacing (MHz)
V
DS
= 28 V; I
Dq
= 700 mA.
(1) IMD
low
(2) IMD
high
Fig 18.
VBW capability in class-AB test circuit
BLC9G20LS-120VT
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
10 of 15
BLC9G20LS-120VT
Power LDMOS transistor
8. Package
outline
Air cavity plastic earless flanged package; 6 leads
SOT1271-2
D
F
A
3
w
D
1
B
1
v
A
c
U
B
1
4
1
5
Į
H
Z
Z
1
U
E
1
E
2
A
6
2
7
y
w
b
b
B
Q
2
1
L
Z
Į
1
0
5
10 mm
11.19 65°
10.99 61°
scale
Dimensions
Unit
(1)
A
b
b
1
c
D
D
1
E
E
F
H
L
Q
U
U
v
w
w
2
y
Z
1
1
2
1
max 4.01
1.14 12.80 0.18 20.42
20.37 9.80
9.75 1.14
19.53
mm nom
min 3.40 0.89
12.60 0.13 20.12
20.17 9.50
9.55 0.94
19.33
1.68
1.45
9.91 0.50 0.50 0.50
9.70
25.40
20.70
20.50
0.10 5.94
5.74
25.20
Note:
1. Dimension Q is measured at 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
sot1271-2_po
References
Outline
version
European
projection
Issue date
17-04-13
IEC
JEDEC
JEITA
SOT1271-2
Fig 19.
Package outline SOT1271-2
BLC9G20LS-120VT
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© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
11 of 15
BLC9G20LS-120VT
Power LDMOS transistor
9. Handling
information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
Table 11.
ESD sensitivity
ESD model
Class
C2A
[1]
2
[2]
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
[1] CDM
classification C2A is granted to any part that passes after exposure to an ESD pulse of 500
V
.
[2] HBM
classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000
V
.
10. Abbreviations
Table 12.
Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
IS-95
Interim Standard 95
LDMOS
MTF
Laterally Diffused Metal Oxide Semiconductor
Median Time to Failure
PAR
Peak-to-Average Ratio
RoHS
SMD
Restriction of Hazardous Substances
Surface Mounted Device
VBW
Video BandWidth
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision
history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLC9G20LS-120VT v.2
20180705
Product data sheet
–
LC9G20LS-120VT v.1
Modifications
•
T
a
ble 2 on page 2
: table corrected
BLC9G20LS-120VT v.1
20170523
Product data sheet
–
–
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
12 of 15
BLC9G20LS-120VT
Power LDMOS transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
T
e
rms and conditions of commercial sale
of Ampleon.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use —
Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
13 of 15
BLC9G20LS-120VT
Power LDMOS transistor
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
BLC9G20LS-120VT
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.
V
.
2
018. All rights reserved.
Product data sheet
Rev. 2 — 5 July 2018
14 of 15
BLC9G20LS-120VT
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
2
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
7.1
7.2
7.3
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
3
Ruggedness in class-AB operation. . . . . . . . . .
3
Impedance information . . . . . . . . . . . . . . . . . . .
4
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Graphical data
. . . . . . . . . . . . . . . . . . . . . . . . .
6
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . .
8
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . .
9
2-
T
o
ne VBW . . . . . . . . . . . . . . . . . . . . . . . . . .
10
7.4
7.4.1
7.4.2
7.4.3
7.4.4
7.4.5
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
11
Handling information. . . . . . . . . . . . . . . . . . . .
12
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
2
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
13
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.
V
.
2018.
All rights reserved.
Date of release: 5 July 2018
Document identifier: BLC9G20LS-120VT
