Ampleon-BLF1721M8LS200U
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BLF1721M8LS200
Power LDMOS transistor
Rev. 1 — 22 January 2016
Product data sheet
1. Product
profile
1.1 General
description
200 W LDMOS power transistor for various applications such as Industrial, Scientific and
Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; V
DS
= 28 V; I
Dq
= 1600 mA; in a class-AB demo circuit.
[1]
[1]
Test signal
CW RF
f
P
L(1dB)
(W)
G
p
D
IMD3
[2]
(dBc)
35.4
26.9
–
(MHz)
(dB)
14.9
15.3
15.2
15.6
(%)
1700 to 1950
1900 to 2100
1700 to 1950
1900 to 2100
223.5
215.1
276.0
262.4
49.5
44.8
55.8
49.5
pulsed RF
[3]
–
[1] at
1 dB compression.
[2] at
V
DS
= 28 V; I
Dq
= 1600 mA; 2-tones; carrier spacing 5 MHz.
[3] t
p
= 100
s;
= 10 %.
1.2 Features
and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for pulsed and CW applications in the 1700 MHz to 2100 MHz
frequency range such as ISM and industrial heating
BLF1721M8LS200
Power LDMOS transistor
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
1
1
3
2
2
gate
[1]
3
source
2
3
sym112
[1] Connected
to flange.
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF1721M8LS200
–
earless flanged ceramic package; 2 leads
SOT502B
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
–
65
V
GS
T
stg
0.5 +13
V
65
+150
C
T
j
–
225
C
[1] Continuous
use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal
characteristics
Table 5.
Symbol Parameter
R
th(j-c)
thermal resistance from junction to
T
case
= 80
C; P
L
= 55 W (CW);
case V
DS
= 28 V; I
Dq
= 2000 mA
Thermal characteristics
Conditions
Typ
Unit
0.263 K/W
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
2 of 14
BLF1721M8LS200
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
65
1.55 1.77
2.25
Max Unit
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 3.3 mA
–
–
V
V
GS(th)
I
DSS
gate-source threshold voltage
drain leakage current
V
DS
= 10 V; I
D
= 330 mA
V
GS
= 0 V; V
DS
= 28 V
V
–
–
–
4.2
–
A
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
60
I
GSS
g
fs
gate leakage current
V
GS
= 11 V; V
DS
= 0 V
–
–
–
–
420 nA
forward transconductance
V
DS
= 10 V; I
D
= 330 mA
2.2
45
–
–
S
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 11.55 A
m
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1 to 64 DPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 2000 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
G
p
power gain
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
18
23
–
19
–
dB
%
D
drain efficiency
input return loss
28.5 –
RL
in
17
6
dB
ACPR
5M
adjacent channel power ratio (5 MHz)
–
30
25 dBc
7. Test
information
7.1 Ruggedness
in class-AB operation
The BLF1721M8LS200 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1600 mA; P
L
= 200 W (CW); f = 2110 MHz.
7.2 Impedance
information
Table 8.
Typical impedance information
Measured load pull data. Typical values unless otherwise specified.
Z
S
and Z
L
defined in
Figure 1
.
f
Z
S
Z
L
(MHz)
1700
1800
1900
2000
2100
(
)
(
)
0.7
j2.0
0.7
j2.1
0.7
j2.4
0.6
j2.9
0.8
j3.9
2.1
j2.1
2.4
j2.4
2.8
j2.3
3.7
j1.9
4.2
j1.9
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
3 of 14
BLF1721M8LS200
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test
circuit
40 mm
40 mm
J2
Q2
R2
J1
C15
R1
C6
C2 C4
C3 C5
C9
R3
R4
J3
C11 C13
C10
C12
Q1
C14
C7
76.2 mm
C16
C1
C8
C21
C19
C17
C18
C20
C22
aaa-020086
Printed-Circuit Board (PCB): Rogers RO3003;
r
= 3.0; thickness = 0.76 mm.
See
T
a
ble 9
for list of components.
Fig 2.
Component layout for test circuit for 1700 MHz to 1950 MHz
Table 9.
List of components
For test circuit, see
Figure 2
.
Component
C1, C6
C2
Description
Value
Remarks
multilayer ceramic chip capacitor
27 pF
ATC: ATC600F270
multilayer ceramic chip capacitor
10
F
,
1
0 V
Murata:
GRM21BR61A106KE19L
C3
multilayer ceramic chip capacitor
100 n
F
,
1
00 V
BLF1721M8LS200
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
4 of 14
BLF1721M8LS200
Power LDMOS transistor
Table 9.
List of components
…continued
For test circuit, see
Figure 2
.
Component
Description
Value
Remarks
C4
multilayer ceramic chip capacitor
10 n
F
,
5
0 V
Multicomp:
U0805W103K1HRN-P4
C5
multilayer ceramic chip capacitor
240 pF
multilayer ceramic chip capacitor
3.3 pF
Passive Plus: 0805N
Passive Plus: 1111N
C7, C8
C9, C22
C10, C17
C11, C18
C12, C19
electrolytic capacitor
220
F
,
5
0 V
multilayer ceramic chip capacitor
10 pF
multilayer ceramic chip capacitor
330 pF
ATC: ATC100B100
Passive Plus: 1111N
multilayer ceramic chip capacitor
0.01
F
,
2
50 V
TDK:
C3225C0G2E103J160AA
C13, C20
multilayer ceramic chip capacitor
0.1
F
,
2
50 V
Murata:
GRM32DR72E104KW01L
C14, C15, C21
multilayer ceramic chip capacitor
10
F
,
1
00 V
TDK: C5750X7S2A106M
Passive Plus: 1111N
C16
C23
J1, J2
J3
multilayer ceramic chip capacitor
33 p
F
,
multilayer ceramic chip capacitor
–
power connector
header connector
transistor
–
2 pin, 2.54 mm
Sullins: GBC02SFBN-M30
Q1
–
BLF1721M8LS200
NXP: BC857B
Q2
PNP transistor
resistor
–
R1
9.1
SMD 0805
R2
resistor
5
SMD 0805
R3, R4
resistor
0.005
, 1 %
Susumu: RL7520WT-R005-F
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
5 of 14
BLF1721M8LS200
Power LDMOS transistor
40 mm
40 mm
J2
Q2
R2
J1
C20
C9
R3
C12
R4
C16
R1
C6
J3
C2 C4
C3 C5
C10
Q1
C14
C7
C18
76.2 mm
C21
C1
C19
C8
C15
C11
C13
C17
C22
aaa-020087
Printed-Circuit Board (PCB): Rogers RO3003;
r
= 3.0; thickness = 0.76 mm.
See
T
a
ble 10
for list of components.
Fig 3.
Component layout for test circuit for 1900 MHz to 2100 MHz
Table 10.
List of components
For test circuit, see
Figure 3
.
Component
C1, C6
C2
Description
Value
Remarks
multilayer ceramic chip capacitor
27 pF
ATC: ATC600F270
multilayer ceramic chip capacitor
10
F
,
1
0 V
Murata:
GRM21BR61A106KE19L
C3
C4
multilayer ceramic chip capacitor
100 n
F
,
1
00 V
multilayer ceramic chip capacitor
10 n
F
,
5
0 V
Multicomp:
U0805W103K1HRN-P4
C5
multilayer ceramic chip capacitor
240 pF
multilayer ceramic chip capacitor
2.7 pF
Passive Plus: 0805N
ATC: ATC100B
C7, C8
C9, C22
C10, C11
C12, C13
C14, C15
electrolytic capacitor
220
F
,
5
0 V
multilayer ceramic chip capacitor
10 pF
multilayer ceramic chip capacitor
330 pF
ATC: ATC100B100
Passive Plus: 1111N
multilayer ceramic chip capacitor
0.01
F
,
2
50 V
TDK:
C3225C0G2E103J160AA
C16, C17
multilayer ceramic chip capacitor
0.1
F
,
2
50 V
Murata:
GRM32DR72E104KW01L
C18, C19, C20
multilayer ceramic chip capacitor
10
F
,
1
00 V
TDK: C5750X7S2A106M
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
6 of 14
BLF1721M8LS200
Power LDMOS transistor
Table 10.
List of components
…continued
For test circuit, see
Figure 3
.
Component
C21
Description
Value
Remarks
multilayer ceramic chip capacitor
33 p
F
,
Passive Plus: 1111N
J1, J2
J3
power connector
header connector
transistor
–
2 pin, 0.1 inch
Sullins: GBC02SFBN-M30
Q1
–
BLF1721M8LS200
NXP: BC857B
Q2
PNP transistor
resistor
–
R1
9.1
SMD 0805
R2
resistor
5
SMD 0805
R3, R4
resistor
0.005
, 1 %
Susumu: RL7520WT-R005-F
7.4 Graphical
data
7.4.1 1700
MHz to 1950 MHz
aaa-018019
aaa-018020
18
16
14
12
10
8
70
18
16
14
12
10
8
60
G
η
η
G
η
η
D
(%)
p
D
p
(dB)
(%)
(dB)
G
G
p
p
60
50
40
30
20
10
0
(
(
1
1
)
)
(
(
2
2
)
)
(
(
3
3
)
)
(
(
1
1
)
)
)
)
(
(
2
2
)
)
)
)
(
(
3
3
)
)
)
)
50
40
30
20
10
η
D
η
D
6
6
46
48
50
52
54
56
46
48
50
52
54
56
P
(dBm)
P
(dBm)
L
L
V
DS
= 28 V; I
Dq
= 1600 mA; t
p
= 100
s;
= 10 %.
V
DS
= 28 V; I
Dq
= 1600 mA.
(1) f
= 1700 MHz
(2) f
= 1800 MHz
(3) f
= 1900 MHz
(1) f
= 1700 MHz
(2) f
= 1800 MHz
(3) f
= 1900 MHz
Fig 4.
Power gain and drain efficiency as function of
output power; typical values
Fig 5.
Power gain and drain efficiency as function of
output power; typical values
BLF1721M8LS200
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
7 of 14
BLF1721M8LS200
Power LDMOS transistor
aaa-018021
0
IM
D
D
3
3
(dBc)
-12
-24
-36
-48
-60
IMD3 lo
w
w
(1
)
)
(2
)
)
(3
)
)
(1
)
)
(2
)
)
(3
)
)
IMD3 h
i
i
g
g
h
h
35
39
43
47
51
55
P
(dBm)
L
V
DS
= 28 V; I
Dq
= 1600 mA; CW; 2-tones; carrier spacing 5 MHz.
(1) f
= 1700 MHz
(2) f
= 1800 MHz
(3) f
= 1900 MHz
Fig 6.
Third-order intermodulation distortion as a function of output power; typical values
7.4.2 1900
MHz to 2100 MHz
aaa-018022
aaa-018023
18
16
14
12
10
8
60
50
40
30
20
10
0
18
16
14
12
10
8
50
40
30
20
10
0
G
η
η
G
η
η
D
(%)
p
D
p
(dB)
(%)
(dB)
G
G
p
p
(
(
1
1
)
)
(
(
2
2
)
)
(
(
3
3
)
)
(
(
1
1
)
)
)
)
(
(
2
2
)
)
)
)
(
(
3
3
)
)
)
)
η
D
η
D
6
46
48
50
52
54
56
46
48
50
52
P (dBm)
L
54
P
(dBm)
L
V
DS
= 28 V; I
Dq
= 1600 mA; t
p
= 100
s;
= 10 %.
V
DS
= 28 V; I
Dq
= 1600 mA.
(1) f
= 1900 MHz
(2) f
= 2000 MHz
(3) f
= 2100 MHz
(1) f
= 1900 MHz
(2) f
= 2000 MHz
(3) f
= 2100 MHz
Fig 7.
Power gain and drain efficiency as function of
output power; typical values
Fig 8.
Power gain and drain efficiency as function of
output power; typical values
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
8 of 14
BLF1721M8LS200
Power LDMOS transistor
aaa-018024
0
IM
D
D
3
3
(dBc)
-12
-24
-36
-48
-60
IMD3 lo
w
w
(1
)
)
(2
)
)
(3
)
)
(1
)
)
(2
)
)
(3
)
)
IMD3 h
i
i
g
g
h
h
35
39
43
47
51
55
P
(dBm)
L
V
DS
= 28 V; I
Dq
= 1600 mA; CW; 2-tones; carrier spacing 5 MHz.
(1) f
= 1900 MHz
(2) f
= 2000 MHz
(3) f
= 2100 MHz
Fig 9.
Third-order intermodulation distortion as a function of output power; typical values
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
9 of 14
BLF1721M8LS200
Power LDMOS transistor
8. Package
outline
Earless flanged ceramic package; 2 leads
SOT502B
D
A
F
3
1
D
D
1
c
U
1
L
E
E
H
U
1
2
2
w
b
M
M
D
Q
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
4.72
3.43
20.02 19.96
9.50
19.61 19.66
9.30
9.53
9.25
19.94
1.70
1.45
0.15
0.08
1.14
5.33
20.70 9.91
20.45 9.65
0.25
mm
0.89 18.92 4.32
0.505
0.495
0.186
0.135
0.788 0.786 0.374 0.375
0.785
0.067
0.057
0.006
0.003
0.045
0.210
0.815 0.390
0.805 0.380
0.010
inches
0.772 0.774 0.366 0.364 0.035 0.745 0.170
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
07-05-09
12-05-02
SOT502B
Fig 10.
Package outline SOT502B
BLF1721M8LS200
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
10 of 14
BLF1721M8LS200
Power LDMOS transistor
9. Handling
information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
10. Abbreviations
Table 11.
Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
LDMOS
MTF
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Median Time to Failure
PAR
Peak-to-Average Ratio
SMD
Surface Mounted Device
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision
history
Table 12.
Revision history
Document ID
Release date
Data sheet status
20160122 Product
data sheet
Change notice
Supersedes
BLF1721M8LS200 v.1
–
–
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
11 of 14
BLF1721M8LS200
Power LDMOS transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale
of Ampleon.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use —
Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
12 of 14
BLF1721M8LS200
Power LDMOS transistor
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
BLF1721M8LS200
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 22 January 2016
13 of 14
BLF1721M8LS200
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
2
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
3
Ruggedness in class-AB operation
. . . . . . . . .
3
Impedance information . . . . . . . . . . . . . . . . . . .
3
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Graphical data
. . . . . . . . . . . . . . . . . . . . . . . . .
7
1700 MHz to 1950 MHz . . . . . . . . . . . . . . . . . .
7
1900 MHz to 2100 MHz . . . . . . . . . . . . . . . . . .
8
7.1
7.2
7.3
7.4
7.4.1
7.4.2
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
10
Handling information. . . . . . . . . . . . . . . . . . . .
11
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
12
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
13
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V.
2016.
All rights reserved.
Date of release: 22 January 2016
Document identifier: BLF1721M8LS200
