Ampleon-BLF7G20LS-90P-118
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BLF7G20L-90P;
BLF7G20LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product
profile
1.1 General
description
90 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
1880 MHz and 2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
f
I
Dq
V
DS
P
L(AV)
G
p
D
ACPR
400k
ACPR
600k
EVM
rms
(MHz)
(mA) (V)
(W)
84
(dB) (%) (dBc)
(dBc)
–
(%)
–
CW
1805 to 1880
1805 to 1880
550
550
28
28
19
54
–
GSM EDGE
40
19.5 41
61
74
2.5
1.2 Features
and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz
and 2110 MHz to 2170 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the frequency
bands of 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to
2170 MHz.
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
2. Pinning
information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF7G20L-90P (SOT1121A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
3
5
4
5
[1]
2
sym117
BLF7G20LS-90P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
5
4
[1]
2
sym117
[1] Connected
to flange.
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF7G20L-90P
BLF7G20LS-90P
–
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
SOT1121A
–
earless flanged LDMOST ceramic package; 4 leads
SOT1121B
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
–
0.5 +13
V
–
18
A
T
stg
T
j
storage temperature
junction temperature
65
+150
C
200
C
–
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
5. Thermal
characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
R
th(j-c)
thermal resistance from junction to case
T
case
= 80
C; P
L
= 90 W
0.49 K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
Conditions
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 0.5 mA
Min Typ
65
1.5 1.9
Max Unit
–
–
V
V
GS(th)
I
DSS
gate-source threshold voltage
drain leakage current
V
DS
= 10 V; I
D
= 50 mA
V
GS
= 0 V; V
DS
= 28 V
2.3
2
V
–
–
A
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
8.2 9.5
–
I
GSS
g
fs
gate leakage current
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.5 A
–
–
–
–
200 nA
forward transconductance
3.8
0.28
–
–
S
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.75 A
7. Test
information
Table 7.
Application information
f = 1805 MHz to 1880 MHz; RF performance at V
DS
= 28 V; I
Dq
= 550 mA; T
case
= 25
C;
2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ
Max Unit
Mode of operation: GSM EDGE; P
L(AV)
= 40 W
G
p
power gain
18.3 19.5
–
dB
dB
%
RL
in
D
input return loss
drain efficiency
–
15
41
8
–
38
–
ACPR
400k
adjacent channel power ratio (400 kHz)
ACPR
600k
adjacent channel power ratio (600 kHz)
61
74
2.5
8
58
dBc
–
70.5 dBc
EVM
rms
EVM
M
RMS EDGE signal distortion error
peak EDGE signal distortion error
–
3.8
%
%
–
12.5
Mode of operation: CW; P
L(AV)
= 84 W
G
p
power gain
17.8 19
51 54
–
–
dB
%
D
drain efficiency
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
7.1 Ruggedness
in class-AB operation
The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
V
V
DS
= 28 V; I
Dq
= 550 mA; P
L
= 90 W (CW), f = 1805 MHz,
DS
= 28 V; I
Dq
= 380 mA; P
L
= 40 W (CW, half device), f = 2110 MHz,
DS
= 28 V; I
Dq
= 380 mA; P
L
= 55 W (CW pulse, 10 %, 100
s, halve device),
f = 1427 MHz.
7.2 One-tone
CW
001aal867
22
70
G
η
D
p
(dB)
21
(%)
60
20
19
18
17
16
15
50
40
30
20
10
0
G
p
η
D
0
20
40
60
80
100
(W)
P
L
V
DS
= 28 V; I
Dq
= 550 mA; f = 1880 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as function of load power;
typical values
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
7.3 Two-tone
CW
001aal868
001aal869
22
p
70
η
0
G
D
(dB)
21
(%)
60
IMD
(dBc)
IMD3
IMD5
IMD7
−
20
20
19
18
17
16
15
50
40
30
20
10
0
G
p
−
40
−
60
−
80
η
D
0
10
20
30
40
50
60
(W)
70
0
10
20
30
40
50
60
P (W)
L
70
P
L
V
DS
= 28 V; I
Dq
= 550 mA; f
1
= 1879.95 MHz;
f
2
= 1880.05 MHz.
V
DS
= 28 V; I
Dq
= 550 mA; f
1
= 1879.95 MHz;
f
2
= 1880.05 MHz.
Fig 2.
Two-tone CW power gain and drain efficiency
as function of load power; typical values
Fig 3.
Two-tone CW intermodulation distortion as a
function of load power; typical values
7.4 GSM
EDGE
001aal870
001aal871
21
p
70
η
−
50
G
D
(dB)
20
(%)
60
ACPR
(dBc)
G
p
19
18
17
16
15
14
50
40
30
20
10
0
−
60
ACPR
ACPR
400k
−
70
−
80
600k
η
D
0
10
20
30
40
50
60
(W)
70
0
10
20
30
40
50
60
P (W)
L
70
P
L
V
DS
= 28 V; I
Dq
= 550 mA; f = 1880 MHz.
V
DS
= 28 V; I
Dq
= 550 mA; f = 1880 MHz.
Fig 4.
GSM EDGE power gain and drain efficiency as
function of load power; typical values
Fig 5.
GSM EDGE ACPR at 400 kHz and at 600 kHz as
function of load power; typical values
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
001aal872
25
EVM
(%)
20
15
10
5
EVM
M
EVM
rms
0
0
10
20
30
40
50
60
(W)
70
P
L
V
DS
= 28 V; I
Dq
= 550 mA; f = 1880 MHz.
Fig 6.
GSM EDGE RMS EDGE and peak EDGE as function of load power; typical values
7.5 Single
carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 – 13).
PAR = 9.7 dB at 0.01 % probability on the CCD
F
.
C
hannel bandwidth is 1.2288 MHz.
001aal873
001aal874
21
60
−
30
ACPR
(dBc)
ACPR
885k
G
(dB)
η
D
p
(%)
G
−
40
−
50
−
60
−
70
−
80
p
19
40
ACPR
1980k
17
15
20
η
D
0
0
16
32
48
0
16
32
48
P
(W)
P (W)
L
L
V
DS
= 28 V; I
Dq
= 600 mA; f = 1880 MHz.
V
DS
= 28 V; I
Dq
= 600 mA; f = 1880 MHz.
Fig 7.
Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
Fig 8.
Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
6 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
001aal875
11
P
A
R
10
9
8
7
6
5
4
0
16
32
48
P
L
(W)
V
DS
= 28 V; I
Dq
= 600 mA; f = 1880 MHz.
Fig 9.
Single carrier IS-95 peak-to-average power ratio as a function of load power;
typical values
7.6 Single
carrier W-CDMA
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCD
F
.
Channel bandwidth is 3.84 MHz.
001aal876
001aal877
21
60
−
20
ACPR
5M
G
(dB)
η
ACPR
(dBc)
p
D
(%)
G
p
19
40
−
36
−
52
−
68
ACPR
10M
17
15
20
η
D
0
0
10
20
30
40
50
60
(W)
70
0
10
20
30
40
50
60
P (W)
L
70
P
L
V
DS
= 28 V; I
Dq
= 600 mA; f = 1880 MHz.
V
DS
= 28 V; I
Dq
= 600 mA; f = 1880 MHz.
Fig 10.
Single carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
Fig 11.
Single carrier W-CDMA ACPR at 5 MHz and at
10 MHz as function of load power;
typical values
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
7 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
7.7 Test
circuit
Table 8.
List of components
For test circuit see
Figure 12
.
Component
C1, C2, C3
C4, C5
Description
Value
Remarks
[1]
[2]
[3]
[2]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
24 pF
4.7
F
11 pF
C6, C7, C8
C9, C10
C11
10
F
470
F; 63 V
12
R1, R2
SMD resistor
Philips 1206
[1] American
T
e
chnical Ceramics type 100A or capacitor of same quality.
[2] TDK
or capacitor of same quality.
[3] American
T
e
chnical Ceramics type 100B or capacitor of same quality.
C11
C9
C4
C2
C6
R1
C8
C1
BLF7G20L-90P
OUTPUT REV 3
BLF7G20L-90P
INPUT REV 3
R2
C7
C5
C3
C10
001aal878
Printed-Circuit Board (PCB):
T
a
conic RF35;
r
= 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35
m.
See
T
a
ble 8
for a list of components.
Fig 12.
Component layout for class-AB production test circuit
BLF7G20L-90P_7G20LS-90P#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
8 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
7.8 Impedance
information
Table 9.
Typical impedance
Typical values valid for both section in parallel unless otherwise specified.
f
Z
S
Z
L
MHz
1800
1840
1880
1.0
j3.3
1.2
j3.3
1.1
j3.4
2.8
j2.7
2.8
j2.5
2.7
j2.4
gate
drain
Z
Z
L
S
001aal831
Fig 13.
Definition of transistor impedance
BLF7G20L-90P_7G20LS-90P#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
9 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
8. Package
outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT1121A
D
A
F
D
U
1
B
C
1
q
H
1
c
1
2
p
U
2
E
1
H
E
5
A
w
1
A
B
3
4
b
w
2
C
Q
e
0
5
10 mm
p
scale
Dimensions
(1)
(2)
Unit
A
b
c
D
D
1
e
E
E
1
F
H
H
1
Q
q
U
1
U
2
w
1
w
2
max 4.75
3.94 0.18
20.02 19.96
mm nom
9.53 9.53 1.14 19.94
12.83 3.38
1.70
34.16 9.91
8.89
27.94
1.1
0.25 0.51
0.01 0.02
min 3.45
3.68 0.10
19.61 19.66
9.27 9.27 0.89 18.92
12.57 3.12
1.45
0.375 0.375 0.045
0.785 0.505 0.133 0.067
33.91 9.65
1.345 0.39
max 0.187 0.155 0.007
0.788 0.786
inches nom
min 0.136 0.145 0.004
0.772 0.774
0.35
0.365 0.365 0.035
0.745 0.495 0.123 0.057
1.335 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
10-02-02
SOT1121A
Fig 14.
Package outline SOT1121A
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
10 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
Earless flanged ceramic package; 4 leads
SOT1121B
D
A
F
5
D
D
1
U
H
1
1
c
w
D
2
1
2
U
E
1
H
E
2
3
4
y
b
w
3
e
Q
y
0
5
10 mm
Q
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
e
E
E
1
F
H
H
1
U
U
w
w
3
1
2
2
max 4.75
3.94 0.18
20.02 19.96
9.53 9.53 1.14 19.94
12.83 1.70 20.70 9.91 0.51 0.25 0.25
mm nom
8.89
min 3.45
3.68 0.08
19.61 19.66
max 0.187 0.155 0.007
0.788 0.786
inches nom
min 0.136 0.145 0.003
0.772 0.774
9.27 9.27 0.89 18.92
12.57 1.45 20.45 9.65
0.375 0.375 0.045
0.785 0.505 0.067 0.815
0.39 0.02 0.01 0.01
0.35
0.365 0.365 0.035
0.745 0.495 0.057 0.805
0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-12-14
12-06-07
SOT1121B
Fig 15.
Package outline SOT1121B
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
11 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
9. Abbreviations
Table 10.
Abbreviations
Acronym
Description
3GPP
CW
3rd Generation Partnership Project
Continuous Wave
CCDF
DPCH
EDGE
ESD
Complementary Cumulative Distribution Function
Dedicated Physical Channel
Enhanced Data rates for GSM Evolution
ElectroStatic Discharge
GSM
Global System for Mobile Communications
Interim Standard 95
IS-95
LDMOS
LDMOST
PAR
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
RF
SMD
Surface Mounted Device
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
10. Revision history
Table 11.
Revision history
Document ID
Release date
20150901
Data sheet status
Change notice
Supersedes
BLF7G20L-90P_7G20LS-90P#3
Product data sheet
–
BLF7G20L-90P_7G20LS-
90P v.2
Modifications:
•
The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLF7G20L-90P_7G20LS-90P v.2
20111020
Product data sheet
–
BLF7G20L-90P_7G20LS-
90P v.1
BLF7G20L-90P_7G20LS-90P v.1
20100428
Product data sheet
–
–
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
12 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
11. Legal
information
11.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Ampleon product can reasonably be expected to result in personal injury,
11.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
11.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale
of Ampleon.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use —
Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
13 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
Non-automotive qualified products —
Unless this data sheet expressly
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12. Contact information
For more information, please visit:
For sales office addresses, please visit:
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
14 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
3
Ruggedness in class-AB operation
. . . . . . . . .
4
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . .
5
GSM EDGE
. . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Single carrier IS-9
5
. . . . . . . . . . . . . . . . . . . . . .
6
Single carrier W-CDMA. . . . . . . . . . . . . . . . . . .
7
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Impedance information . . . . . . . . . . . . . . . . . . .
9
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
10
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
2
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . .
13
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
14
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . .
14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V.
2015.
All rights reserved.
Date of release: 1 September 2015
Document identifier: BLF7G20L-90P_7G20LS-90P#3
