Ampleon-BLF888EU
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BLF888E; BLF888ES
UHF power LDMOS transistor
Rev. 2 — 30 August 2016
Product data sheet
1. Product
profile
1.1 General
description
A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter
applications which operates at 150 W DVB-T average power. The excellent ruggedness of
this device makes it ideal for digital and analog transmitter applications.
Table 1.
Application information
RF performance at V
DS
= 50 V in an asymmetrical Doherty application.
Test signal
f
P
L(AV)
(W)
G
p
(dB)
17
D
(%)
52
50
49
IMD
shldr
(dBc)
38
PAR
(dB)
8
[1]
8
[1]
8
[1]
(MHz)
DVB-T (8k OFDM)
470 to 608
600 to 700
650 to 790
150
150
17
38
150
15
38
[1] PAR
(of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCD
F
.
1.2 Features
and benefits
Designed for asymmetric Doherty operation
Very high efficiency enabling air cooled high power transmitters
Integrated ESD protection
Excellent ruggedness
High power gain
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
BLF888E; BLF888ES
UHF power LDMOS transistor
2. Pinning
information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF888E (SOT539A)
1
2
3
4
5
drain1 (peak)
1
3
2
4
1
drain2 (main)
gate1 (peak)
gate2 (main)
source
5
3
5
4
[1]
2
sym117
BLF888ES (SOT539B)
1
2
3
4
5
drain1 (peak)
1
3
2
4
1
drain2 (main)
gate1 (peak)
gate2 (main)
source
5
3
5
4
[1]
2
sym117
[1] Connected
to flange.
3. Ordering
information
Table 3.
Type number
Package
Name Description
Ordering information
Version
flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
earless flanged balanced ceramic package; 4 leads
SOT539B
BLF888E
–
–
BLF888ES
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS(amp)main
V
DS(amp)peak
V
GS(amp)main
V
GS(amp)peak
T
stg
Parameter
Conditions
Min Max
Unit
V
main amplifier drain-source voltage
peak amplifier drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
–
–
104
120
V
0.5 +11
6 +11
V
V
65 +150
C
[1]
T
j
junction temperature
–
225
C
[1] Continuous
use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
2 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
5. Thermal
characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
[2]
R
th(j-c)
thermal resistance from junction to
T
case
= 90
C; V
DS
= 50 V;
case
DS
= 3 A (main); I
DS
= 0 A (peak)
0.29 K/W
I
T
case
= 90
C; V
DS
= 50 V;
0.19 K/W
P
L
= 150 W; PAR = 8 dB
[1] Measured
under DC test conditions, with peak section off.
[2] Measured
in an ultra-wide Doherty application, using DVB-T (8k OFDM) signal, PAR (of output signal) at
0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCD
F
.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Main device
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 2.4 mA
104
–
–
V
V
GS(th)
I
DSS
gate-source threshold voltage
drain leakage current
V
DS
= 10 V; I
D
= 240 mA
1.25 1.75
2.25
V
V
GS
= 0 V; V
DS
= 50 V
–
–
–
2.8
–
A
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
38
I
GSS
gate leakage current
V
GS
= 10 V; V
DS
= 0 V
–
–
–
280
–
nA
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.5 A
120
m
Peak device
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 3.6 mA
125
–
–
V
V
GS(th)
I
DSS
gate-source threshold voltage
drain leakage current
V
DS
= 10 V; I
D
= 360 mA
1.33 1.83
2.33
V
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
–
–
–
2.8
–
A
A
I
DSX
drain cut-off current
57
V
DS
= 10 V
I
GSS
gate leakage current
V
GS
= 10 V; V
DS
= 0 V
–
–
–
280
–
nA
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 12.6 A
90
m
Table 7.
AC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
Main device
Conditions
Min Typ
Max Unit
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
–
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
–
210
67
–
–
–
pF
pF
pF
reverse transfer capacitance
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
–
1.35
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
3 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Table 7.
AC characteristics
…continued
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
Peak device
Conditions
Min Typ
Max Unit
C
iss
C
oss
C
rss
input capacitance
output capacitance
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
–
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
–
315
105
1.5
–
–
–
pF
pF
pF
reverse transfer capacitance
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
–
Table 8.
RF characteristics
RF characteristics in Ampleon production test circuit, T
case
= 25
C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
DVB-T (8k OFDM), Doherty operation
V
DS
I
Dq
drain-source voltage
–
–
50
–
–
V
quiescent drain current
peak section: V
GS
= 1.3 V
below V
GS(th)
(peak)
600
mA
P
L(AV)
G
p
average output power
power gain
f = 550 MHz
f = 550 MHz
f = 550 MHz
f = 550 MHz
–
150
–
–
–
–
W
15.8 17
48 52
7.2 7.8
dB
%
D
drain efficiency
PAR
peak-to-average ratio
dB
7. Test
information
7.1 Ruggedness
in Doherty operation
The BLF888E and BLF888ES are capable of withstanding a load mismatch corresponding
to VSWR
40 : 1 through all phases under the following conditions: V
DS
= 50 V;
f = 550 MHz at rated load power.
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
4 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
7.2 Test
circuit
95 mm
95 mm
R10
L3
C13
L5
C24
C20
C22
C11
L1
R12
R6
C3
C4
C5 C6
C1
80 mm
R1
R2
C2
R5
R3
C26
C7
C10
R4
C8
C9
R7
L2
C12
C14
L6
C23
C21
L4
C25
R11
amp00021
Printed-Circuit Board (PCB): Rogers 3006;
r
= 6.5 F/m; height = 0.635 mm; Cu (top/bottom metalization); thickness copper
plating = 29.6
m; Rogers 3010:
r
= 10 F/m; height = 0.254 mm
See
T
a
ble 9
for a list of components.
Fig 1.
Component layout for production RF test circuit
Table 9.
List of components
For test circuit see
Figure 1
.
Component
C1, C2
C3
Description
Value
multilayer ceramic chip capacitor
51 pF
multilayer ceramic chip capacitor
11 pF
multilayer ceramic chip capacitor
13 pF
multilayer ceramic chip capacitor
24 pF
multilayer ceramic chip capacitor
33 pF
multilayer ceramic chip capacitor
51 pF
multilayer ceramic chip capacitor
12 pF
multilayer ceramic chip capacitor
20 pF
multilayer ceramic chip capacitor
43 pF
multilayer ceramic chip capacitor
4.7
F
Remarks
ATC 100B
ATC 100B
ATC 100B
ATC 100B
ATC 100B
ATC 100A
ATC 100B
ATC 100B
ATC 100B
[1]
[1]
[1]
[1]
[1]
[2]
[1]
[1]
[1]
C4
C5, C6
C7
C8
C9
C10
C11, C12
C13, C14
C20, C21
C22, C23
C25, C25
C26
[1]
[1]
electrolytic capacitor
multilayer ceramic chip capacitor
4.7
F
,
1
00 V
electrolytic capacitor
470
F
,
6
3 V
multilayer ceramic chip capacitor
47 pF
100 pF
ATC 100B
ATC 100B
Coilcraft
L1, L2
L3, L4
inductor
inductor
10 nH
0.5 turn, D = 2 mm,
d = 1mm
L5, L6
R1
inductor
1 turn, D = 5 mm,
d = 1mm
chip resistor
90
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
5 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Table 9.
List of components
…continued
For test circuit see
Figure 1
.
Component
R2
Description
Value
265
360
15
75
5
Remarks
chip resistor
chip resistor
chip resistor
chip resistor
chip resistor
wire resistor
shunt resistor
R3, R4
R5
R6
R7
R10, R11
R12
1
0.01
[1] American
T
e
chnical Ceramics type 100B or capacitor of same quality
[2] American
T
e
chnical Ceramics type 100A or capacitor of same quality
7.3 Graphical
data
7.3.1 DVB-T
in production test circuit
amp00079
amp00080
11
10
9
60
PA
R
R
(dB)
η
D
(%)
50
40
30
20
10
0
8
7
0
25
50
75 100
125 150 175 200
(W)
0
25
50
75 100
125 150 175 200
(W)
P
P
L
L
V
DS
= 50 V; I
Dq
= 600 mA; measured in a Doherty
production test circuit at 550 MHz.
V
DS
= 50 V; I
Dq
= 600 mA; measured in a Doherty
production test circuit at 550 MHz.
Fig 2.
Peak-to-average power ratio as a function of
output power; typical values
Fig 3.
Drain efficiency as a function of output power;
typical values
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
6 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
amp00081
18
G
p
(dB)
17.5
17
16.5
16
0
25
50
75 100
125 150 175 200
(W)
P
L
V
DS
= 50 V; I
Dq
= 600 mA; measured in a Doherty production test circuit at 550 MHz.
Fig 4.
Power gain as a function of output power; typical values
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
7 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
8. Package
outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53
17.12
3.48 3.30 2.26
25.53
0.18
0.10
1.75
41.28 10.29
41.02 10.03
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
13.72
mm
3.05 2.01
9.30 9.27 1.50
16.10 25.27
2.97
0.465
0.455
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674
0.366 0.365 0.059 0.634 0.995 0.117
0.137 0.130 0.089
0.405
0.007
0.004
1.005
1.625
inches
Note
0.540
0.120 0.079
1.615 0.395
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 5.
Package outline SOT539A
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
8 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
U
2
E
H
1
L
3
4
b
w
3
Q
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81
0.18 31.55
31.52 9.5
nom
9.53
1.75 17.12
25.53 3.48
2.26 32.39
10.29
mm
13.72
0.54
0.25 0.25
0.01 0.01
min 4.2 11.56
0.10 30.94
30.96 9.3
9.27
1.50 16.10
25.27 2.97
2.01 32.13
10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
inches
Note
0.059 0.634 0.995 0.117 0.079 1.265 0.395
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 6.
Package outline SOT539B
BLF888E_BLF888ES
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
9 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
9. Handling
information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
CCDF
DVB-T
ESD
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast –
T
e
rrestrial
ElectroStatic Discharge
LDMOS
MTF
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
OFDM
PAR
Orthogonal Frequency Division Multiplexing
Peak-to-Average Ratio
UHF
Ultra High Frequency
VSWR
Voltage Standing Wave Ratio
11. Revision
history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF888E_BLF888ES v.2
Modifications:
20160830
Product data sheet
–
BLF888E_BLF888ES v.1
•
Section 1.1 on page 1
: section updated
•
T
a
ble 1 on page 1
: table updated
•
Section 1.2 on page 1
: text second list item updated
•
T
a
ble 5 on page 3
: table updated
•
T
a
ble 6 on page 3
: table updated
•
T
a
ble 8 on page 4
: table updated
•
Section 7.1 on page 4
: section updated
•
Section 7.3 on page 6
: section added
BLF888E_BLF888ES v.1
20160317
Objective data sheet
–
–
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
10 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
subject to the general terms and conditions of commercial sale, as published
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale
of Ampleon.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use —
Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF888E_BLF888ES
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
11 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
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All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 30 August 2016
12 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
4
Ruggedness in Doherty operation . . . . . . . . . .
4
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Graphical data
. . . . . . . . . . . . . . . . . . . . . . . . .
6
DVB-T in production test circuit
. . . . . . . . . . . .
6
7.1
7.2
7.3
7.3.1
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
8
Handling information. . . . . . . . . . . . . . . . . . . .
10
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
0
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
0
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
11
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
12
12.1
12.2
12.3
12.4
12.5
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V.
2016.
All rights reserved.
Date of release: 30 August 2016
Document identifier: BLF888E_BLF888ES
