Ampleon-BLF8G22LS-270U
| Part # | Ampleon-BLF8G22LS-270U |
Download  | Ampleon-BLF8G22LS-270U |
BLF8G22LS-270
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product
profile
1.1 General
description
270 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
f
I
Dq
V
DS
(V)
28
P
L(AV)
(W)
G
p
D
ACPR
5M
(dBc)
29
[1]
(MHz)
(mA)
(dB)
17.7
(%)
30
2-carrier W-CDMA
2110 to 2170
2400
80
[1] 3GPP
test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing.
1.2 Features
and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency range
BLF8G22LS-270
Power LDMOS transistor
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
1
1
2
2
gate
3
[1]
3
source
2
3
sym112
[1] Connected
to flange.
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF8G22LS-270
–
earless flanged ceramic package; 2 leads
SOT502B
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
–
65
V
GS
T
stg
0.5 +13
V
65
+150
C
[1]
T
j
–
225
C
[1] Continuous
use at maximum temperature will affect the reliability.
5. Thermal
characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
R
th(j-c)
thermal resistance from junction to case
T
case
= 80
C; P
L
= 80 W;
0.26 K/W
V
DS
= 28 V; I
Dq
= 2400 mA
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 14
BLF8G22LS-270
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
Conditions
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0 V; I
D
= 4.5 mA
Min Typ
Max Unit
65
–
–
V
V
V
V
GS(th)
V
GSq
I
DSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
V
DS
= 20 V; I
D
= 450 mA
V
DS
= 28 V; I
D
= 2400 mA
V
GS
= 0 V; V
DS
= 28 V
1.5 1.8
2.3
1.7 2.1
2.5
–
–
–
4.2
A
I
DSX
drain cut-off current
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 20 V
80
–
A
I
GSS
g
fs
gate leakage current
V
GS
= 11 V; V
DS
= 0 V
–
–
–
–
420 nA
forward transconductance
V
DS
= 20 V; I
D
= 15.75 mA
3.8
–
S
R
DS(on)
drain-source on-state resistance
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 15.75 A
0.04 –
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 DPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 2400 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
Max Unit
G
p
power gain
P
L(AV)
= 80 W
P
L(AV)
= 80 W
P
L(AV)
= 80 W
P
L(AV)
= 80 W
16.5 17.7
–
dB
dB
%
RL
in
D
input return loss
drain efficiency
–
17
30
7
–
26
–
ACPR
5M
adjacent channel power ratio (5 MHz)
29
26.5 dBc
7. Test
information
7.1 Ruggedness
in class-AB operation
The BLF8G22LS-270 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 2400 mA; P
L
= 270 W (CW); f = 2110 MHz.
7.2 Impedance
information
Table 8.
Typical impedance information
I
Dq
= 2400 mA; main transistor V
DS
= 28 V.
Z
S
and Z
L
defined in
Figure 1
.
f
Z
S
Z
L
(MHz)
2110
2140
2170
(
)
(
)
0.68
j4.73
0.80
j4.94
0.96
j5.37
2.42
j2.08
2.67
j2.24
2.68
j2.24
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 14
BLF8G22LS-270
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test
circuit
50 mm
50 mm
C2
C12
C1
C6
R1
C8
C7
C3
C4
C5
C14
60
mm
C10 C11
C9
C13
aaa-005366
Printed-Circuit Board (PCB):
T
a
conic RF-35;
r
= 3.5; thickness = 0.76 mm.
See
T
a
ble 9
for list of components.
Fig 2.
Component layout for test circuit
Table 9.
List of components
For test circuit, see
Figure 2
.
Component
C1
Description
Value
Remarks
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
10
F
,
5
0 V
47 pF
Murata; SMD 2220
ATC100B
C2
C3, C4
C5
0.7 pF
ATC100B
0.2 pF
ATC100B
C6, C9
C7, C10
C8, C11
C12, C13
C14
12 pF
ATC100B
100 pF
100 pF
470
F
,
6
3 V
33 pF
ATC100B
ATC800B
multilayer ceramic chip capacitor
resistor
ATC100B
R1
5.1
SMD 0805
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 14
BLF8G22LS-270
Power LDMOS transistor
7.4 Graphs
7.4.1 Pulsed
CW
aaa-005367
aaa-005368
19
18
17
16
15
14
60
50
40
30
20
10
0
G
η
D
(%)
p
(dB)
(3)
(2)
(1)
(3
)
)
(2
)
)
(1
)
)
42
44
46
48
50
52
54
56
58
42
44
46
48
50
52
54
P (dBm)
L
56
58
P
(dBm)
L
V
DS
= 28 V; I
Dq
= 2400 mA; t
p
= 100
s;
= 10 %.
V
DS
= 28 V; I
Dq
= 2400 mA; t
p
= 100
s;
= 10 %.
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
Fig 3.
Power gain as a function of output power;
typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 14
BLF8G22LS-270
Power LDMOS transistor
7.4.2 IS-95
aaa-005369
aaa-005370
20
19
18
17
16
15
50
40
30
20
10
0
G
η
D
(%)
p
(dB)
(3)
(2)
(1)
(3
)
)
(2
)
)
(1
)
)
39
41
43
45
47
49
P
51
53
55
39
41
43
45
47
49
51
(dBm)
L(AV)
53
55
(dBm)
P
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA.
V
DS
= 28 V; I
Dq
= 2400 mA.
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
Fig 5.
Power gain as a function of average output
power; typical values
Fig 6.
Drain efficiency as a function of average
output power; typical values
aaa-005371
aaa-005372
-30
88
5
5
k
k
(dBc)
-50
ACPR
ACPR
19
8
8
0
0
k
k
(dBc)
-55
-60
-65
-70
-75
-80
-40
-50
-60
-70
(1
)
)
(2
)
)
(3
)
)
(1
)
)
(2
)
)
(3
)
)
39
41
43
45
47
49
P
51
53
55
39
41
43
45
47
49
51
(dBm)
L(AV)
53
55
(dBm)
P
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA.
V
DS
= 28 V; I
Dq
= 2400 mA.
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
Fig 7.
Adjacent channel power ratio (885 kHz) as a
function of average output power;
typical values
Fig 8.
Adjacent channel power ratio (1980 kHz) as a
function of average output power;
typical values
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
6 of 14
BLF8G22LS-270
Power LDMOS transistor
aaa-005373
aaa-005374
12
10
8
58
PA
R
R
(dB)
P
L(
M
M
)
)
(dBm)
56
54
52
50
48
(1)
(2)
(3)
(1
)
)
(2
)
)
(3
)
)
6
4
2
39
41
43
45
47
49
P
51
53
55
39
41
43
45
47
49
51
(dBm)
L(AV)
53
55
(dBm)
P
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA.
V
DS
= 28 V; I
Dq
= 2400 mA.
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
(1) f
= 2110 MHz
(2) f
= 2140 MHz
(3) f
= 2170 MHz
Fig 9.
Peak-to-average power ratio as a function of
average output power; typical values
Fig 10.
Peak output power as a function of average
output power; typical values
7.4.3 1-carrier
W-CDMA
aaa-005375
aaa-005376
19
50
G
η
D
(%)
p
(dB)
18
17
16
15
14
40
30
20
10
0
(3)
(2)
(1)
(3
)
)
(2
)
)
(1
)
)
42
44
46
48
50
52
54
56
42
44
46
48
50
52
54
56
P
(dBm)
P
(dBm)
L(AV)
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA.
V
DS
= 28 V; I
Dq
= 2400 mA.
(1) f
= 2112.5 MHz
(2) f
= 2140 MHz
(3) f
= 2167.5 MHz
(1) f
= 2112.5 MHz
(2) f
= 2140 MHz
(3) f
= 2167.5 MHz
Fig 11.
Power gain as a function of average output
power; typical values
Fig 12.
Drain efficiency as a function of average
output power; typical values
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
7 of 14
BLF8G22LS-270
Power LDMOS transistor
aaa-005377
aaa-005378
8
6
4
2
0
0
PA
R
R
(dB)
RL
in
(dB)
-5
(1)
(2)
(3)
-10
-15
-20
-25
(1
)
)
(2
)
)
(3
)
)
42
44
46
48
50
52
54
56
42
44
46
48
50
52
54
56
P
(dBm)
P
(dBm)
L(AV)
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA.
V
DS
= 28 V; I
Dq
= 2400 mA.
(1) f
= 2112.5 MHz
(2) f
= 2140 MHz
(3) f
= 2167.5 MHz
(1) f
= 2112.5 MHz
(2) f
= 2140 MHz
(3) f
= 2167.5 MHz
Fig 13.
Peak-to-average power ratio as a function of
average output power; typical values
Fig 14.
Input return loss as a function of average
output power; typical values
7.4.4 2-carrier
W-CDMA
aaa-005379
aaa-005380
19
50
G
η
D
(%)
p
(dB)
18
17
16
15
14
40
30
20
10
0
(3
)
)
(2
)
)
(1
)
)
(3)
(2)
(1)
42
44
46
48
50
52
54
56
42
44
46
48
50
52
54
56
P
(dBm)
P
(dBm)
L(AV)
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA; 5 MHz carrier spacing.
V
DS
= 28 V; I
Dq
= 2400 mA; 5 MHz carrier spacing.
(1) f
= 2115 MHz
(2) f
= 2140 MHz
(3) f
= 2165 MHz
(1) f
= 2115 MHz
(2) f
= 2140 MHz
(3) f
= 2165 MHz
Fig 15.
Power gain as a function of average output
power; typical values
Fig 16.
Drain efficiency as a function of average
output power; typical values
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
8 of 14
BLF8G22LS-270
Power LDMOS transistor
aaa-005381
aaa-005382
-15
5M
-20
ACPR
ACPR
10
M
M
(dBc)
(dBc)
-20
-25
-30
-35
-40
-45
-50
-25
-30
-35
-40
-45
(1
)
)
(2
)
)
(3
)
)
(1
)
)
(2
)
)
(3
)
)
42
44
46
48
50
52
54
56
42
44
46
48
50
52
54
56
P
(dBm)
P
(dBm)
L(AV)
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA; 5 MHz carrier spacing.
V
DS
= 28 V; I
Dq
= 2400 mA; 10 MHz carrier spacing.
(1) f
= 2115 MHz
(2) f
= 2140 MHz
(3) f
= 2165 MHz
(1) f
= 2115 MHz
(2) f
= 2140 MHz
(3) f
= 2165 MHz
Fig 17.
Adjacent channel power ratio (5 MHz) as a
function of average output power;
typical values
Fig 18.
Adjacent channel power ratio (10 MHz) as a
function of average output power;
typical values
aaa-005383
26
RL
in
(dB)
(3)
(2)
22
18
14
10
(1)
42
44
46
48
50
52
54
56
P
(dBm)
L(AV)
V
DS
= 28 V; I
Dq
= 2400 mA; 5 MHz carrier spacing.
(1) f
= 2115 MHz
(2) f
= 2140 MHz
(3) f
= 2165 MHz
Fig 19.
Input return loss as a function of average output power; typical values
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
9 of 14
BLF8G22LS-270
Power LDMOS transistor
8. Package
outline
Earless flanged ceramic package; 2 leads
SOT502B
D
A
F
3
1
D
D
1
c
U
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96
9.50
19.61 19.66
9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
07-05-09
12-05-02
SOT502B
Fig 20.
Package outline SOT502B
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
10 of 14
BLF8G22LS-270
Power LDMOS transistor
9. Handling
information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical Channel
ElectroStatic Discharge
IS-95
Interim Standard 95
LDMOS
PAR
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average Ratio
SMD
Surface Mounted Device
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision
history
Table 11.
Revision history
Document ID
Release date
Data sheet status
20150901 Product
data sheet
Change notice
Supersedes
BLF8G22LS-270 v.3
BLF8G22LS-270#4
Modifications:
•
The format of this document has been redesigned to comply with the new
identity guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where
appropriate.
BLF8G22LS-270 v.3
BLF8G22LS-270 v.2
BLF8G22LS-270 v.1
20121220
20121203
20121012
Product data sheet
Preliminary data sheet
Objective data sheet
–
–
–
BLF8G22LS-270 v.2
BLF8G22LS-270 v.1
–
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
11 of 14
BLF8G22LS-270
Power LDMOS transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale
of Ampleon.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use —
Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
12 of 14
BLF8G22LS-270
Power LDMOS transistor
Non-automotive qualified products —
Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
For sales office addresses, please visit:
BLF8G22LS-270#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
13 of 14
BLF8G22LS-270
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
2
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
7
7.1
7.2
7.3
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
3
Ruggedness in class-AB operation
. . . . . . . . .
3
Impedance information . . . . . . . . . . . . . . . . . . .
3
T
e
st circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
IS-9
5
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
1-carrier W-CDMA
. . . . . . . . . . . . . . . . . . . . . .
7
2-carrier W-CDMA
. . . . . . . . . . . . . . . . . . . . . .
8
7.4
7.4.1
7.4.2
7.4.3
7.4.4
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
10
Handling information. . . . . . . . . . . . . . . . . . . .
11
Abbreviation
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
12
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
13
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V.
2015.
All rights reserved.
Date of release: 1 September 2015
Document identifier: BLF8G22LS-270#4
