amsem-2N7002K
| Part # | amsem-2N7002K |
| Download | amsem-2N7002K |
N-Channel MOSFET
N-
沟道
Mos
管
DATA SHEET
2N7002K
◇
Epoxy meets UL 94 V-0 flammability rating
◇
High density cell design for low R
DS(ON)
◇
Voltage controlled small signal switch
◇
Rugged and reliable
◇
ESD Protected up to 2KV (HBM)
Device Marking Code
72K
2N7002K
MAXIMUM RATINGS
(
Ta = 25
℃)
Symbol
V
DS
V
GS
I
D
Parameter
Value
60
Units
V
Drain-source Voltage
Gate-source-Voltage
Drain Current
±
20
340
V
mA
mW
Pd
Total Power Dissipation
Junction Temperature
300.
T
J
-55 to 150
℃
T
J,
R
Storage Temperature
-55 to 150
357
℃
Thermal Resistance from Junction to Ambient
℃
/W
ELECTRICAL CHARACTERISTICS
(
Ta = 25
℃)
Symbol
V
(BR)
Dss
Parameter
Drain-source Voltage Breakdown
Voltage
Test Conditions
V
GS
=0V,I
D
=10uA
Min
60
Max
2.5
Units
V
V
V
DS
=VGS,I
D
=1mA
V
DS
=0V,V
GS
=
±
10V
V
DS
=0V,V
GS
=
±
5V
1.0
V
GS(th)
I
GSS
Gate-Threshold Voltage
±
200
±
100
nA
nA
Gate
–
body Leakage
Idss
Rdson
Vsd
Zero Gate Voltage Drain Current
Drain-source On-resistance
Diode Forward Voltage
V
DS
=48V,V
GS
=0V
V
GS
=4.5V,I
D
=200mA
V
GS
=10V,I
D
=500mA
V
GS
=0V,Is=300mA
1
uA
Ω
V
5.3
5.0
1.5
Vgs=0V,Is=300mA,Vr=25V
Dls/dt=-100A/us
Qr
Recovered charge
30
nC
Ciss
Input Capacitance
40
VDS=10V
Document Number:8010030
Revision:21-Apr-28
An hui Anmei Semiconductor Co.,Ltd.
~ 1 ~
N-Channel MOSFET
N-
沟道
Mos
管
Coss
Crss
Output Capacitance
30
10
pF
VGS=0V
F=1MHz
Reverse
Transfer
Capacitance
SWITCHING
Td(on)
Turn on time
Turn off time
VDD=50V,RL=250
Ω
RGS=50
Ω
,VGS=10V
RG=50
Ω
10
15
Td(off)
ns
trr
Reverse recovery
time
VGS=0V,Is=300mA
VR=25V
30
Dls/dt=-100A/us
ORDERING INFORMATION
Device
Package
Shipping
Tape
wide
Emboss
pitch
Tape
Notes
specification
Tape & Reel
2N7002K
SOT23
8mm
4mm
Conductive
3000pcs /7
”
Reel
PACKAGE DIMENSIONS
Document Number:8010030
Revision:21-Apr-28
An hui Anmei Semiconductor Co.,Ltd.
~ 2 ~
