amsem-2N7002KDW
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2N7002KDW
60V N-Channel Enhancement Mode MOSFET – ESD Protected
SOT-363
Unit: inch (mm)
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3
Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4
Ω
0.054(1.35)
0.045(1.15)
• Advanced Trench Process
T
echnology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.040(1.00)
0.031(0.80)
• In compliance with EU RoHS 2002/95/EC directives
0.10 MAX.
0.018(0.45)
0.006(0.15)
MECHANICALDATA
0.087(2.20)
0.078(2.00)
• Case: SOT-363 Package
6
1
5
2
4
3
•
T
e
rminals : Solderable per MIL-STD-750,Method 2026
• Marking : K27
Maximum RATINGS
and Thermal Characteristics
(T
A
=25
O
C unless
otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol
V
D
S
Limit
60
Units
V
Gate-Source Voltage
V
G
S
I
D
+20
115
800
V
Continuous Drain Current
mA
mA
1)
Pulsed Drain Current
I
D
M
T
A
=
25
O
C
T
A
=
75
O
C
200
120
Maximum Power Dissipation
P
D
T
J
,
T
S
TG
R
θ
J
A
mW
O
C
Operating Junction and Storage
T
e
mperature Range
-55 to + 150
625
Junction-to Ambient Thermal
Resistance(PCB mounted)
2
O
C
/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t
< 5 sec
Document Number:810525
Revision:18-Oct-19
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1
2N7002KDW
60V N-Channel Enhancement Mode MOSFET – ESD Protected
ELECTRICALCHARACTERISTICS
Parameter
S
y
mbol
T
e
st Condition
Min.
Ty
p
.
Max.
Units
Static
Drain-Source Breakdown
Voltage
BV
D
SS
V
G
S(th)
R
D
S(on)
R
D
S(on)
I
D
SS
V
G
S
=
0V, I
D
=
10uA
V
D
S
=
V
G
S
, I
D
=
250uA
V
GS
=4.5V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
DS
=60V, V
GS
=0V
60
–
–
–
–
–
–
–
–
2.5
4.0
3.0
1
V
V
Gate Threshold Voltage
1
Drain-Source On-State
Resistance
–
Ω
Drain-Source On-State
Resistance
–
Zero Gate Voltage Drain
C
u
rrent
–
–
uA
uA
Gate Body Leakage
Forward
T
ransconductance
D
y
namic
I
G
SS
V
G
S
=
+20V, V
D
S
=
0V
V
D
S
=
15V, I
D
=
250mA
+10
–
g
fS
100
mS
V
D
S
=
15V, I
D
=
200mA
V
GS
=4.5V
T
o
tal Gate Charge
Q
g
–
–
0.8
nC
ns
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
t
o
n
t
o
ff
–
–
–
–
–
–
–
–
–
–
20
40
35
10
5
V
DD
=30V , R
L
=150
Ω
I
D
=200mA , V
GEN
=10V
R
G
=10
Ω
C
i
ss
C
o
ss
C
r
ss
V
D
S
=
25V, V
G
S
=
0V
f=1.0MH
Z
pF
Reverse Transfer
Capacitance
Source-Drain Diode
Diode Forward Voltage
V
S
D
I
s
I
S
=
200mA , V
G
S
=
0V
–
–
–
0.82
1.3
115
800
V
Continuous Diode Forward
C
u
rrent
–
–
–
–
mA
mA
Pulsed Diode Forward
C
u
rrent
I
s
M
V
DD
V
DD
Switching
Gate Charge
Test Circuit
Test Circuit
R
L
R
L
V
IN
V
GS
V
OUT
1mA
R
G
R
G
Document Number:810525
Revision:18-Oct-19
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2
2N7002KDW
60V N-Channel Enhancement Mode MOSFET – ESD Protected
Typical
C
C
h
h
a
a
r
r
a
a
c
c
t
t
e
e
r
r
i
i
s
s
t
t
i
i
c
c
s
s Curves (T
A
=25
O
C,unless otherwise noted)
1.2
1
1.2
1
V
DS
=10V
= 10V ~ 6.0V
G
S
5.0V
4.0V
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
4.0V
T
J
=25
℃
3.0V
3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
F
I
G
.
1
–
O
u
t
p
u
t
Characteristic
FIG.2- Transfer Characteristic
5
4
3
2
1
0
5
4
3
2
1
0
V
GS
= 4.5V
I
D
=500
m
A
I
D
=200mA
V
GS
=10V
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
FIG.3- On
Resistance vs Drain Current
FIG.4- On
Resistance vs Gate to Source Voltage
1.8
V
GS
=10V
I
D
=500mA
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100
125 150
T
J
– Junction Temperature (
o
C)
FIG.5- On
Resistance vs Junction
T
e
mperature
Document Number:810525
Revision:18-Oct-19
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3
2N7002KDW
60V N-Channel Enhancement Mode MOSFET – ESD Protected
10
V
DS
=10V
Vgs
I
D
=250mA
Qg
8
6
4
2
0
Qsw
Vgs(th)
Qg(th)
0
0.2
0.4
0.6
0.8
1
Q
g
– Gate Charge (nC)
Qgs
Qgd
Qg
Fig.6 – Gate Charge Waveform
Fig.7 – Gate Charge
1.2
88
86
84
82
80
78
76
74
72
I
D
=250
m
A
ID = 250uA
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
– Junction Temperature (
o
C)
T
J
– Junction Temperature (
o
C)
Fig.8 – Threshold Voltage vs
T
e
mperature
Fig.9 –
Breakdown Voltage vs Junction
T
e
mperature
10
V
GS
=0V
1
25
℃
0.1
T
J
=125
℃
-55
℃
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
– Source-to-Drain Voltage (V)
Fig.10 – Source-Drain Diode Forward Voltage
Document Number:810525
Revision:18-Oct-19
安徽安
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导
体
有限公司
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4
2N7002KDW
60V N-Channel Enhancement Mode MOSFET – ESD Protected
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing
information
T/R – 10K per 13″ plastic Reel
T/R – 3K per 7” plastic Reel
Document Number:810525
Revision:18-Oct-19
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有限公司
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5
