amsem-2N7002KH

N-Channel MOSFET  

N-

沟道

Mos

管  

DATA SHEET  

2N7002KH  

◇Epoxy Meets UL 94 V-0 Flammability Rating  

◇

High Density Cell Design for Low R

DS(ON)  

◇

Voltage Controlled Small Signal Switch  

◇

Rugged and Reliable  

Equivalent Circuit  

◇

ESD Protected  

Device Marking Code  

2N7002KH  

C2H  

MAXIMUM RATINGS

 

（

Ta = 25

 

℃）  

Symbol  

Parameter  

Value  

60  

Units  

V

DS  

V

GS  

I

D  

Drain-Source Voltage  

Gate-SourceVoltage  

V

V

±20  

Continuous Drain Current  

Total Power Dissipation  

250  

mA  

P

D  

350  

mW  

-55 to 150  

T

J  

Junction Temperature  

Storage Temperature  

℃

T

STG,  

-55 to 150  

357  

℃

R

θ  

Thermal Resistance from Junction to Ambient  

℃/W  

JA  

ELECTRICAL CHARACTERISTICS

 

（

Ta = 25

 

℃）  

STATIC CHARACTERISTICS  

Symbol  

Parameter  

Drain-Source Breakdown  

Voltage  

Test Conditions  

Min  

60  

Typ  

2.49  

Max  

Units  

V

V

GS

=0V,I

D

=250uA  

V

(BR)

Dss  

V

DS

=V

GS

,I

D

=250uA  

V

DS

=0V,V

GS

=±20V  

2.0  

3.0  

±0.5  

1

V

V

GS(th)  

I

GSS  

Gate-Threshold Voltage  

Gate –Body Leakage Current  

uA  

uA  

Zero Gate Voltage Drain  

Current  

I

DSS  

V

DS

=60V,V

GS

=0V  

V

GS

=10V,I

D

=300mA  

2.0  

3.6  

5.0  

7.5  

1.5  

Drain-Source  

R

DS(ON)  

Ω

V

On-Resistance  

GS  

D

V =5V,I

 

=50mA  

(Note1)  

I

S

=300mA, V

GS

=0V  

V

SD  

Diode Forward Voltage  

0.92  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 1 ~  

N-Channel MOSFET  

N-

沟道

Mos

管  

DYNAMIC  

Qg  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Input Capacitance  

Output Capacitance  

1.3  

V

DS

=10V, I

D

=300mA  

V

GS

=4.5V  

0.6  

0.2  

22  

nC  

Qgs  

Qgd  

Ciss  

Coss  

V

DS

=25V  

V

GS

=0V  

12  

pF  

nS  

f=1.0MHz  

Reverse Transfer Capacitance  

Turn-OnDelayTime  

1.7  

2.9  

Crss  

td(on)  

V

DD

=10V, I

D

=300mA  

V

GS

=10V  

tr  

td(off)  

tf  

Turn-On Rise Time  

Turn-OffDelayTime  

Turn-Off Fall Time  

1.8  

5.6  

1.9  

R

G

=10

Ω

 

DRAIN-SOURCE DIODE  

Continuous Diode Forward  

Current  

I

S  

300  

mA  

Note:  

1. Pulse

 

Test : Pulse width

≤

300μs, Duty Cycle

≤2

%.  

2. Guaranteed

 

by Design, Not Subject to Production Testing.  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 2 ~  

N-Channel MOSFET  

N-

沟道

Mos

管  

TYPICAL CHARACTERISTICS  

On-Region Characteristics  

Transfer Characteristics  

On-Resistance VS. Junction Temperature  

On-resistance VS. Drain Current  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 3 ~  

N-Channel MOSFET  

N-

沟道

Mos

管  

On-Resistance Variation With VGS  

Body Diode Characteristics  

Gate-Charge Characteristics  

Breakdown Voltage Variation VS. Temperature  

Threshold Voltage Variation With Temperature.  

Capacitance VS. Drain-Source Voltage.  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 4 ~  

N-Channel MOSFET  

N-

沟道

Mos

管  

ORDERING INFORMATION  

Device  

Package  

SOT323  

Shipping  

Tape  

wide  

Emboss  

pitch  

Tape  

Notes  

specification  

Tape & Reel  

2N7002KH  

8mm  

4mm  

Conductive  

3000pcs /7” Reel  

PACKAGE DIMENSIONS  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

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5

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