amsem-2N7002KM

N-channel MOSFET  

N

型场效应晶体管  

DATA SHEET  

SOT723  

2N7002KM  

◇

High Density Cell Design for Low RDS(ON)  

◇

Voltage Controlled Small Signal Switch  

◇

Small Outline Surface Mount Package  

◇

RoHS compliant / Green EMC  

Circuit Diagram  

Device Marking Code  

RK  

2N7002KM  

MAXIMUM RATINGS (Ta=25

℃

unless otherwise noted)  

Symbol  

V

DS  

Parameter  

Value  

60  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

Drain Current-Continuous  

Power Dissipation  

V

GS  

I

D  

±20  

0.34  

V

A

P

D  

0.15  

W

R

ΘJA  

T

j  

Thermal Resistance From Junction To Ambient  

Junction Temperature  

833  

℃

/W  

℃

150  

T

stg  

Storage Temperature  

-55

～

+150  

℃

ELECTRICAL CHARACTERISTICS

@ 25°C Unless Otherwise Specified  

Symbol  

Parameter  

Test Conditions  

Min Typ  

Max  

Units  

Drain-Source  

V

(BR)DSS  

V

GS

=0V, I

D

=250µA  

60  

V

Breakdown Voltage  

Gate-Threshold  

Voltage  

V

GS(th)  

V

DS

=VGS, I

D

=250µA  

1.0  

1.4  

2.5  

V

Zero Gate Voltage  

Drain Current  

I

DSS  

V

DS

=48V, V

GS

=0V  

uA  

1.0  

V

GS

=±20V, V

DS

=0V  

V

GS

=±10V, V

DS

=0V  

V

GS

=±5V, V

DS

=0V  

V

GS

=10V, I

D

=500mA  

±10  

µA  

nA  

nA  

Ω

Gate-Body Leakage  

Current  

I

GSS  

±200  

±100  

1.3  

R

DS(on)  

Drain-Source  

4.0  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 1 ~  

N-channel MOSFET  

N

型场效应晶体管  

On-Resistance  

1.4  

V

GS

=4.5V,I

D

=200mA  

4.5  

V

GS

=0V, I

S

=300mA,V

R

=25V  

Recovered Charge  

30  

nC  

Q

r  

dl/dt=-

100A/µs  

Dynamic Characteristics  

C

iss  

Input Capacitance  

40  

30  

10  

C

oss  

Output Capacitance  

V

DS

=10V,V

GS

=0V, f=1MHz  

pF  

Reverse Transfer  

Capacitance  

C

rss  

Switching Characteristics  

t

d(on)

Turn-on Delay Time  

t

d(off)  

V

DD

=25V,V

GS

=10V,R

L

=250

Ω

,  

R

GS

=50K,R

GEN

=25

Ω  

10  

15  

Turn-off Delay Time  

Reverse Recovery  

Time  

nS  

V

GS

=0V, I

S

=300mA,V

R

=25V,  

t

rr  

30  

dl/dt=-

100A/µs  

Source-Drain Diode Characteristics  

Diode Forward  

V

SD  

V

GS

=0V, I

S

=200mA  

V

0.97  

1.5  

Voltage  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 2 ~  

N-channel MOSFET  

N

型场效应晶体管  

Curve Characteristics  

s

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 3 ~  

N-channel MOSFET  

N

型场效应晶体管  

ORDERING INFORMATION  

Device  

Package  

SOT723  

Shipping  

Tape  

wide  

Emboss  

Tape  

Notes  

pitch specification  

Tape & Reel  

2N7002KM  

8mm  

4mm  

Conductive  

8000pcs /7

”

Reel  

PACKAGE DIMENSIONS  

Package outline : SOT723  

Top view  

Side view  

Front view  

Soldering Pattern  

Notice:  

1.Lead plating: Pb free solder  

2.Lead thickness includes solder plating  

3.Lead frame: CAC-5  

4.Other Tolerance: ±0.05  

5.Dimensions are exclusive of Burrs,Mold Flash and Tie Bar extrusions  

6.Unit: mm  

Document Number:8010030  

Revision:21-Apr-28  

An hui Anmei Semiconductor Co.,Ltd.  

~ 4 ~