amsem-BC817-40
| Part # | amsem-BC817-40 |
Download  | amsem-BC817-40 |
NPN General Purpose Amplifier
NPN
通用放大器
DATA SHEET
BC817
TRANSISTOR (NPN)
◇
Capable of 300mWatts of Power Dissipation
◇
Operating and Storage Junction Temperatures: -55
℃
to 150
℃
◇
Surface Mount SOT-23 Package
◇
RoHS compliant / Green EMC
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
50
45
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current
500
mA
mW
℃
/W
℃
℃
P
C
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
300
R
Θ
JA
T
j
417
150
T
stg
Storage Temperature
-55
～
+150
ELECTRICAL CHARACTERISTICS
@ 25°C Unless Otherwise Specified
Symbol
Parameter
Test Conditions
I
C
=10mA, I
B
=0
Min
45
Max
Units
V
Collector-Emitter
Breakdown Voltage
V
CEO
Collector-Base Breakdown
Voltage
V
V
I
C
=10µA, I
E
=0
50
V
CBO
V
EBO
Emitter-Base Breakdown
Voltage
I
E
=1µA, I
C
=0
5.0
nA
nA
V
CB
=45V, I
E
=0V
V
EB
=4V,I
C
=0
I
CBO
I
EBO
Collector Cutoff Current
100
100
Emitter cut-off current
Document Number:8010
4
2
9
An hui Anmei Semiconductor Co.,Ltd.
Revision:21-Apr-28
~ 1 ~
NPN General Purpose Amplifier
NPN
通用放大器
hfe(1)I
C
=100mA,V
CE
=1V
hfe(2)I
C
=500mA,V
CE
=1V
100
40
600
h
FE
DC Current Gain*
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
0.7
1.2
10
V
V
I
C
=500mA,I
B
=50mA
I
C
=500mA,I
B
=50mA
V
CE(sat)
V
BE(sat)
f
T
Transition frequency
Collector Capacitance
I
C
=10mA, V
CE
=5V,f=100MHz 100
V
CB
=10.0V, f=1MHz
MHZ
PF
C
ob
CLASSIFICATION OF hfe(1)
Rank
Range
BC817-16
100-250
6A
BC817-25
160-400
6B
BC817-40
250-600
6C
Marking
ORDERING INFORMATION
Device
Package
Shipping
Tape
wide
Emboss
Tape
Notes
pitch specification
Tape & Reel
BC817
SOT23
8mm
4mm
Conductive
3000pcs /7
”
Reel
PACKAGE DIMENSIONS
Document Number:8010
4
2
9
Revision:21-Apr-28
An hui Anmei Semiconductor Co.,Ltd.
~ 2 ~
