amsem-BC846BM3

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amsem-BC846BM3
NPN General Purpose Amplifier  
NPN
通用放大器  
DATA SHEET  
SOT723  
BC846AM3 THRU BC848CM3  
◇
Small Outline Surface Mount Package  
◇
RoHS compliant / Green EMC  
Circuit Diagram  
Device BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C  
Marking  
1A  
1B  
1E  
1F  
1G  
1J  
1K  
1L  
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)  
Symbol  
V

CBO  

Parameter  
Value  
Unit  
Collector-Base Voltage  
V
BC846  
BC847  
BC848  
80  
50  
30  
Collector-Emitter Voltage  
V
BC846  
BC847  
BC848  
65  
45  
V

CEO  

30  
V

EBO  

I

C  

Emitter-Base Voltage  
Collector Current  
6
V
mA  
mW  
℃
/W  
℃
100  
P

C  

Collector Power Dissipation  
Thermal Resistance From Junction To Ambient

(Note1)  

265  
R

ΘJA  

T

j  

472  
Junction Temperature  
150  
T

stg  

Storage Temperature  
-55
~
+150  
℃
Note:  
1. Device Mounted on FR−5: 1.0 X 0.75 X 0.062 inch.  
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 1 ~  

NPN General Purpose Amplifier  
NPN
通用放大器  
ELECTRICAL CHARACTERISTICS
@ 25°C Unless Otherwise Specified  
Symbol  
Parameter  
Test Conditions  
I
C
=10mA, I
B
=0  
Min  
Max  
Units  
V
65  
45  
Collector-Emitter Breakdown  
Voltage  
BC846  
BC847  
BC848  
V
CEO  
30  
I
C
=10µA, I
E
=0  
80  
50  
Collector-Base Breakdown  
Voltage  
BC846  
BC847  
BC848  
V
V
CBO  
30  
I
E
=10µA, I
C
=0  
6
6
5
Emitter-Base Breakdown  
Voltage  
BC846  
BC847  
BC848  
V
V
EBO  
I
CBO  
nA  
V
CB
=30V, I
E
=0  
Collector Cutoff Current  
15  
mA  
nA  
V
CE
=30V, I
B
=0V  
V
EB
=5V, I
C
=0  
I
CE0  
I
EBO  
Emitter Cutoff Current  
Emitter Cutoff Current  
1
100  
V
CE
=5V, I
C
=2mA  
110  
200  
420  
220  
450  
800  
0.3  
BC846A/BC847A/BC848A  
BC846B/BC847B/BC848B  
BC847C/BC848C  
h
FE  
DC Current Gain  
I
C
=10mA, I
B
=0.5mA  
I
C
=100mA, I
B
=5mA  
I
C
=10mA, I
B
=0.5mA  
I
C
=100mA, I
B
=5mA  
V
CE
=5V, I
C
=2mA  
Collector-Emitter Saturation  
Voltage  
V
V
V
CE(sat)  
V
BE(sat)  
0.6  
Base-Emitter Saturation  
Voltage  
0.9  
1.1  
0.58  
100  
0.7  
V
BE(on)  
Base-Emitter On Voltage  
V
0.77  
V
CE
=5V, I
C
=10mA  
Current Gain-Bandwidth  
Product  
f
T  
V
CE
=5V, I
C
=10mA, f=100MHz  
MHz  
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 2 ~  

NPN General Purpose Amplifier  
NPN
通用放大器  
TYPICAL CHARACTERISTICS  
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 3 ~  

NPN General Purpose Amplifier  
NPN
通用放大器  
ORDERING INFORMATION  
Device  
Package  
SOT723  
Shipping  
Tape  
wide  
Emboss  
Tape  
Notes  
pitch  
specification  
BC846AM3  
THRU  
Tape & Reel  
8mm  
4mm  
Conductive  
8000pcs /7
”
Reel  
BC848CM3  
PACKAGE DIMENSIONS  
Package outline : SOT723  
Top view  
Side view  
Front view  
Soldering Pattern  
Notice:  
1.Lead plating: Pb free solder  
2.Lead thickness includes solder plating  
3.Lead frame: CAC-5  
4.Other Tolerance: ±0.05  
5.Dimensions are exclusive of Burrs,Mold Flash and Tie Bar extrusions  
6.Unit: mm  
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 4 ~