amsem-BSS138A

Part #	amsem-BSS138A
Download	amsem-BSS138A

N-Channel MOSFET

N-

沟道

Mos

管

DATA SHEET

BSS138A

◇

Epoxy meets UL 94 V-0 flammability rating

◇

High density cell design for low R

DS(ON)

◇

Voltage controlled small signal switch

◇

Rugged and reliable

Internal Structure

1.GATE

◇

ESD Protected

2.SOURCE

3.DRAIN

Device Marking Code

.

SS

BSS138A

MAXIMUM RATINGS

（

Ta = 25

℃）

Symbol

VDS

VGS

ID

Parameter

Value

50

Units

V

Drain-source Voltage

Gate-source-Voltage

Drain Current

±

20

0.22

350

V

A

Pd

Total Power Dissipation

Junction Temperature

mW

TJ

-55 to 150

℃

TJ,

R

Storage Temperature

-55 to 150

357

℃

Thermal Resistance from Junction to Ambient

℃

/W

ELECTRICAL CHARACTERISTICS

（

Ta = 25

℃）

Symbol

V

(BR)DSS

Parameter

Drain-source Voltage

Breakdown Voltage

Gate-Threshold Voltage

(note 1)

Test Conditions

Min

50

Typ

Max

1.45

Units

V

GS

=0V,I

D

=250uA

V

V

V

GS(th)

V

DS

=V

GS

,I

D

=250uA

0.8

1.0

I

GSS

I

DSS

Gate

–

body Leakage

V

DS

=0V,V

GS

=

±

20V

±

10

uA

uA

Zero Gate Voltage Drain Current

V

DS

=48V,V

GS

=0V

1

Drain-source On-resistance

(note 1)

V

GS

=4.5V,I

D

=0.2A

V

GS

=10V,I

D

=0.5A

V

GS

=0V,Is=0.5A

1.3

1.1

4

3

R

DS(on)

V

SD

Ω

V

Diode Forward Voltage(note 1)

Forward Transconductance

(note 1)

0.5

1.3

g

FS

V

DS

=10V, I

D

=0.2A

100

mS

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 1 ~

N-Channel MOSFET

N-

沟道

Mos

管

Dynamic Characteristics

Ciss

Input Capacitance

V

DS

=25V,

V

GS

=0V,

f=1MHz

22.8

pF

Coss

Crss

Output Capacitance

Reverse Transfer

Capacitance

3.5

2.9

Switching Characteristics

t

d(on)

t

d(off)

Turn on time

Turn off time

V

DD

=30V,V

GEN

=10V,R

G

=25

Ω

,

R

L

=60

Ω

,I

D

=0.5A

3.8

19

ns

Note:

1. Pulse

T

e

st : Pulse width

≤

300μs, duty cycle

≤

2

%.

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 2 ~

N-Channel MOSFET

N-

沟道

Mos

管

Typical Characteristics

Output Characteristics

Transfer Characteristics

R

DS(ON)

—

I

D

Characteristics

R

DS(ON)

—

V

GS

Characteristics

I

S

—

V

SD

Characteristics

Threshold Voltage Characteristics

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 3 ~

N-Channel MOSFET

N-

沟道

Mos

管

ORDERING INFORMATION

Device

Package

Shipping

Tape

wide

Emboss

pitch

Tape

Notes

specification

Tape & Reel

BSS138A

SOT23

8mm

4mm

Conductive

3000pcs /7

”

Reel

PACKAGE DIMENSIONS

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 4 ~