amsem-MMBT3904W

Part #	amsem-MMBT3904W
Download	amsem-MMBT3904W

NPN General Purpose Amplifier

NPN

通用放大器

DATA SHEET

MMBT3904W

◇

Epoxy Meets UL 94 V-0 Flammability Rating

◇

Small Outline Surface Mount Package

Equivalent Circuit

COLLECTOR

Device Marking Code

K2N

MMBT3904W

EMITTER

BASE

Maximum Ratings

（

Ta = 25

℃）

Symbol

V

CBO

Parameter

Value

Units

V

60

40

5

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V

CEO

V

EBO

V

V

I

C

P

C

Collector Current

200

200

mA

mW

℃/W

℃

Collector Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

R

θJA

T

J

625

150

T

stg

Storage Temperature

-55

～

+150

℃

Electrical Characteristics

（

Ta = 25

℃）

Symbol

Parameter

Test Conditions

Min

60

Typ

Max

Units

V

（

Collector-Base Breakdown Voltage

I

C

=10

μA,

I

E

=0

V

V

）

ＢＲ

CBO

V

（

Collector-Emitter Breakdown Voltage

I

C

=1mA, I

B

=0

40

）

ＢＲ

CEO

V

（

Emitter-Base Breakdown Voltage

I

E

=10

μA,

I

C

=0

5

V

）

ＢＲ

EBO

I

CBO

I

CEX

Collector Cut-Off Current

Collector Cut-Off Current

V

CB

=60V, I

E

=0

60

50

nA

nA

V

CE

=30V, I

BE(off)

=3V

V

CE

=1V, I

C

=10

0μA

V

CE

=1V, I

C

=1mA

V

CE

=1V, I

C

=10mA

V

CE

=1V, I

C

=50mA

I

C

=10mA, I

B

=1mA

I

C

=50mA, I

B

=5mA

I

C

=10mA, I

B

=1mA

I

C

=50mA, I

B

=5mA

V

CE

=20V, I

C

=10mA,

f=100MHz

40

70

h

FE

DC Current Gain

100

60

300

0.25

0.3

V

V

V

V

V

CE(

sat

)

V

BE(

sat

)

f

T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

0.85

0.95

300

MHz

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 1 ~

NPN General Purpose Amplifier

NPN

通用放大器

V

CB

=5V, I

E

=0,

f=1MHz

C

ob

C

ib

Collector Output Capacitance

Collector Output Capacitance

4

8

pF

pF

V

EB

=0.5V, I

E

=0,

f=1MHz

t

d

t

r

t

s

t

f

Delay time

Delay time

Storage time

Fall time

35

35

nS

nS

V

CC

=3V, V

BE(off)

=0.5V,

I

C

=10mA, I

B1

=1mA

nS

nS

225

75

V

CC

=3V, I

C

=10mA,

I

B1

=I

B2

=1mA

Typical Characteristics

Static Characteristic

Hfe – Ic

V

CEsat

—

I

C

V

BEsat

—

I

C

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 2 ~

NPN General Purpose Amplifier

NPN

通用放大器

Pc

—

Ta

I

C

—

V

BE

ORDERING INFORMATION

Device

Package

Shipping

Tape

wide

Emboss

pitch

Tape

Notes

specification

Tape & Reel

MMBT3904W

SOT323

8mm

4mm

Conductive

3000pcs /7

”

Reel

PACKAGE DIMENSIONS

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 3 ~