amsem-MMBT5551
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NPN General Purpose Amplifier
NPN
通用放大器
DATA SHEET
MMBT5551
◇
Capable of 300mWatts of Power Dissipation
◇
Operating and Storage Junction Temperatures: -55
℃
to 150
℃
◇
Surface Mount SOT-23 Package
◇
RoHS compliant / Green EMC
Device Marking Code
MMBT5551
G1
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
180
160
6
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current
600
300
416
150
mA
mW
℃
/W
℃
P
C
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
R
ΘJA
T
j
T
stg
Storage Temperature
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS
@ 25°C Unless Otherwise Specified
Symbol
Parameter
Test Conditions
I
C
=1.0mA, I
B
=0
Min
160
Max
Units
Collector-emitter
breakdown voltage
V
V
V
V
CEO
Collector-base breakdown
voltage
I
C
=100
µA, I
E
=0
I
E
=10µA, I
C
=0
180
6.0
V
CBO
V
EBO
Emitter-base breakdown
voltage
nA
nA
V
CB
=120V, I
E
=0V
V
EB
=4V,I
C
=0V
I
CBO
I
EBO
Collector cutoff current
Emitter cut-off current
50
50
Document Number:804051
Revision:18-Oct-19
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有限公司
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1
NPN General Purpose Amplifier
NPN
通用放大器
I
C
=1mA,V
CE
=5V
I
C
=10mA,V
CE
=5V
I
C
=50mA,V
CE
=5V
80
100
50
h
FE
DC current gain
300
I
C
=10mA,I
B
=1.0mA
I
C
=50mA,I
B
=5.0mA
I
C
=10mA,I
B
=1.0mA
I
C
=50mA,I
B
=5.0mA
0.15
0
.
2
1.0
1.0
Collector-emitter
saturation voltage
VCE(sat)
V
Base-emitter saturation
voltage
VBE(sat)
f
T
Current gain-bandwidth
Product
I
C
=10mA,
100
300
6
MHZ
pF
V
CE
=10V,f=100MHz
Collector output
capacitance
C
Ob
V
CB
=10V,I
E
=0,f=1MHZ
ORDERING INFORMATION
Device
Package
Shipping
Tape
wide
Emboss
Tape
Notes
pitch specification
Tape & Reel
3000pcs /7
”
Reel
MMBT5551
SOT23
8mm
4mm
Conductive
PACKAGE DIMENSIONS
Document Number:804051
Revision:18-Oct-19
安徽安
美
半
导
体
有限公司
A n
h
ui A
nm ei
Sem
i
c
o
ndu
c
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C o
.
,
L
t
d
.
2
