amsem-MMDT3946
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MMDT3946
COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR
200 mWatts
40 Volts
POWER
VOLTAGE
FEATURES
• Epitaxial
silicon, planar design
• Collector-emitter
voltage VCE = 40V
• Collector
current IC = 200mA
• In
compliance with EU RoHS 2002/95/EC directives
.
Transition Frequency > 300MHz f
T
@IC=10mA,V
CE
=20V,
f=100MHz
MECHANICA
L
D
ATA
• Case:
SOT-363, Plastic
•
T
e
rminals:
Solderable per MIL-STD-750, Method 2026
• Approx.
Weight: 0.006 gram
• Marking:
S3A
6
5
4
1
2
3
Fig.55
ABSOLUTE RATINGS
ABSOLUTE RATING
PARAMETER
Collector – Emitter Voltage
NPN 3904 Section
Value
PNP
3906 Section
–
Symbol
Value
Units
V
CEO
V
CBO
V
EBO
40
6
0
-40
-40
V
V
Collector – Base Voltage
Emitter – Base Voltage
6
.0
200
-5.0
-200
V
Collector Current – Continuous
I
C
mA
THERMA
L
C
HARACTERISTICS
PARAMETER
Symbol
P
TOT
Value
200
Units
mW
Max Power Dissipation
(Note 1)
Thermal Resistance , Junction to Ambient
Junction
T
e
mperature
R
θ
JA
T
J
625
O
C/W
O
C
-55 to 150
-55 to 150
Storage
T
e
mperature
T
STG
O
C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
Document Number:810525
Revision:18-Oct-19
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1
MMDT3946
COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS NPN SECTION
PARAMETER
Symbol
V
(
BR)CEO
T
e
st Condition
I
C
=
1.0mA, I
B
=
0
MIN.
40
TYP.
–
MAX.
–
Units
V
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Base Cutoff Current
V
(
BR)CBO
V
(
BR)EBO
I
B
l
I
C
=
10uA, I
E
=
0
60
6.0
–
–
–
–
–
–
V
V
I
E
=
10uA, I
C
=
0
–
V
C
E
=
30V, V
E
B
=
3.0V
V
C
E
=
30V, V
E
B
=
3.0V
50
50
nA
nA
Collector Cutoff Current
I
C
EX
–
I
C
=
0.1mA, V
C
E
=
1.0V
I
C
=
1.0mA, V
C
E
=
1.0V
I
C
=
10mA, V
C
E
=
1.0V
I
C
=
50mA, V
C
E
=
1.0V
I
C
=
100mA, V
C
E
=
1.0V
40
70
100
60
–
–
–
–
–
–
–
DC Current Gain (Note 2)
h
F E
300
–
–
–
30
Collector – Emitter Saturation Voltage
(Note 2)
I
C
=
10mA, I
B
=
1.0mA
I
C
=
50mA, I
B
=
5.0mA
0.2
0.3
V
C
E(SAT)
V
B
E(SAT)
C
C
BO
C
E
BO
td
–
–
V
Base – Emitter Saturation Voltage
(Note 2)
I
C
=
10mA, I
B
=
1.0mA
I
C
=
50mA, I
B
=
5.0mA
0.65
–
–
–
0.85
0.95
V
Collector – Base Capacitance
Emitter – Base Capacitance
Delay
T
i
me
V
C
B
=
5V, I
E
=
0, f=1MHz
V
C
B
=
0.5V, I
C
=
0, f=1MHz
–
–
–
–
–
–
–
–
–
–
–
–
4.0
8.0
35
pF
pF
ns
ns
ns
ns
V
CC
=
3V,V
B
E
=
-0.5V,
I
C
=
10mA,I
B
=
1.0mA
V
C
C
=
3V,V
B
E
=
-0.5V,
I
C
=
10mA,I
B
=
1.0mA
Rise
T
i
me
tr
35
V
C
C
=
3V,I
C
=
10mA
I
B
1
=I
B
2
=1.0mA
Storage
T
i
me
ts
200
50
V
CC
=
3V,I
C
=
10mA
Fall
T
i
me
tf
I
B
1
=I
B
2
=1.0mA
Note 2: Pulse
T
e
st: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
275
W
300ns
Duty Cycle ~ 2.0%
+10.9V
0
-0.5V
C
* < 4pF
10K
W
S
< 1ns
Delay and Rise Tim e Equ
i
v
a
l
e
nt
T
e
st C
i
rcuit
+3V
275
W
10 to 500us
Duty Cycle ~ 2.0%
+10.9V
0
C
* < 4pF
S
10K
W
-9.1V
< 1ns
1N916
Storage and Fall Time Equivalent Test Circuit
Document Number:810525
Revision:18-Oct-19
安徽安
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有限公司
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t
d
.
2
MMDT3946
COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS PNP SECTION
PARAMETER
Symbol
V
( B R ) C E O
T
e
st Condition
I
C
=
-1.0mA, I
B
=
0
MIN.
-40
TYP.
–
MAX.
–
Units
V
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Base Cutoff Current
V
( B R ) C B O
V
( B R ) E B O
I
B l
I
C
=
-10uA, I
E
=
0
-40
–
–
–
–
–
V
V
I
E
=
-10uA, I
C
=
0
-5.0
–
V
C
E
=
-30V, V
E
B
=
-3.0V
V
C
E
=
-30V, V
E
B
=
-3.0V
–
–
-50
-50
nA
nA
Collector Cutoff Current
I
C E X
I
C
=
-0.1mA, V
C
E
=
-1.0V
I
C
=
-1.0mA, V
C
E
=
-1.0V
I
C
=
-10mA, V
C
E
=
-1.0V
I
C
=
-50mA, V
C
E
=
-1.0V
I
C
=
-100mA, V
C
E
=
-1.0V
60
80
100
60
–
–
–
–
–
–
–
DC Current Gain (Note 2)
h
F E
300
–
–
–
30
Collector – Emitter Saturation Voltage
(Note 2)
I
C
=
-10mA, I
B
=
-1.0mA
I
C
=
-50mA, I
B
=
-5.0mA
-0.25
-0.4
V
C E ( S A T )
–
–
V
Base – Emitter Saturation Voltage
(Note 2)
I
C
=
-10mA, I
B
=
-1.0mA
I
C
=
-50mA, I
B
=
-5.0mA
-0.65
–
–
–
-0.85
-0.95
V
B E ( S A T )
V
Collector – Base Capacitance
Emitter – Base Capacitance
Delay
T
i
me
C
C B O
C
E B O
td
V
C
B
=
-5V, I
E
=
0, f=1MHz
V
C
B
=
-0.5V, I
C
=
0, f=1MHz
–
–
–
–
–
–
–
–
–
–
–
–
4.0
10
pF
pF
ns
ns
ns
ns
V
C
C
=
-3V,V
B
E
=
-0.5V,
I
C
=
-10mA,I
B
=
-1.0mA
35
V
CC
=
-3V,V
B
E
=
-0.5V,
Rise
T
i
me
tr
35
I
C
=
-10mA,I
B
=
-1.0mA
V
CC
=
-3V,I
C
=
-10mA
Storage
T
i
me
ts
225
75
I
B
1
=I
B
2
=-1.0mA
V
CC
=
-3V,I
C
=
-10mA
Fall
T
i
me
tf
I
B
1
=I
B
2
=1.0mA
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
275
W
< 1ns
-0.5V
0
C
* < 4pF
10K
W
S
-10.9V
300ns
Delay and Rise Tim e Equ
i
v
a
l
e
nt
T
e
st C
i
rcuit
+3V
275
W
< 1ns
+
9
.1V
0
C
* < 4pF
S
10K
W
-10.9V
10 to 500us
1N916
Duty Cycle ~ 2.0%
Storage and Fall Time Equivalent Test Circuit
Document Number:810525
Revision:18-Oct-19
安徽安
美
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有限公司
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3
MMDT3946
COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVE NPN SECTION
300
1.400
V
CE
=1V
T
T
J
=150
o
C
=100
o
C
1.200
1.000
0.800
0.600
0.400
0.200
0.000
250
200
150
100
50
J
T
J
=100
o
C
T
J
=25
o
C
T
J
=25
o
C
T
J
=150
o
C
0.1
V
CE
=1V
0
0.01
0.1
1
10
100
1000
0.01
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
(mA)
C
Fig. 2. Typical VBE vs. Collector Current
Fig. 1. Typical h
FE
vs. Collector Current
1.000
1.0
T
J
=25
o
C
T
J
=150
o
C
I
C
/I
B
=10
T
J
=100
o
C
T
J
=25
o
C
0.100
T
J
=150
o
C
I
C
/I
B
=10
0.1
0.01
0.010
0.01
0.1
1
10
100
1000
0.1
1.0
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
CE (sat)
vs. Collector Current
Fig. 4. Typical V
BE(sat)
vs Collector Current
10
C
C
IB
(EB)
T
J
=150
o
C
OB
(CB)
1
0.1
1
10
100
Reverse Voltage, V
(V)
R
Fig. 5. Typical Capacitances vs. Reverse Voltage
Document Number:810525
Revision:18-Oct-19
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有限公司
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4
MMDT3946
COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVE PNP SECTION
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
CE
=1V
T
T
J
J
=150
o
C
=100
o
C
V
CE
=1V
T
J
=25
o
C
=25
o
C
T
J
=100
o
C
T
J
=150
o
C
T
J
0
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Collector Current, -I
C
(mA)
Collector Current, -I
(mA)
C
Fig. 1. Typical h
FE
vs Collector Current
Fig. 2. Typical V
BE
vs Collector Current
1.00
1.000
T
J
=25
o
C
I
C
/I
B
=10
T
J
=100
o
C
T
J
=150
o
C
T
J
=150
o
C
0.10
T
J
=25
o
C
I
C
/I
B
=10
0.01
0.01
0.100
0.01
0.1
1
10
100
1000
0.1
1
10
100
Collector Current, -I
C
(mA)
Collector Current, -I
C
(mA)
Fig. 4. Typical V
BE (sat)
vs Collector Current
Fig. 3. Typical V
CE (sat)
vs Collector Current
10
C
IB
(EB)
C
OB
(CB)
1
-0.1
-1
-10
-100
Reverse Voltage, V
(V)
R
Fig. 5. Typical Capacitances vs Reverse Voltage
Document Number:810525
Revision:18-Oct-19
安徽安
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有限公司
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5
MMDT3946
COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing
information
T/R – 10K per 13″ plastic Reel
T/R – 3K per 7” plastic Reel
Document Number:810525
Revision:18-Oct-19
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6
