amsem-UMD9N

Part #amsem-UMD9N
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amsem-UMD9N
NPN+PNP Digital Transistor  
数字晶体管  
DATA SHEET  
UMD9N  
◇Epoxy meets UL 94 V-0 flammability rating  
5
4
6
◇Lead Free Finish/RoHS Compliant  
◇
Mounting Possible With SOT-363 Automatic Mounting Machines  
◇Transistor Elements Independent, Eliminating Interference  
Equivalent Circuit  
2
3
Device Marking Code  
UMD9N D9  
Maximum Ratings
 
(
Ta = 25
 
℃)  
DTR1 NPN  
Symbol  
V

CC  

V

IN  

Parameter  
Value  
50  
Unit  
V
Supply Voltage  
Input Voltage  
-6
~
40  
70  
V
I

O  

mA  
mA  
mW  
℃
Output Current  
I

C(Max)  

P

D  

100  
Power Dissipation  
150  
T

J  

Junction Temperature  
150  
T

stg  

Storage Temperature  
-55
~
150  
℃
DTR2 PNP  
Symbol  
V

CC  

V

IN  

Parameter  
Supply Voltage  
Value  
-50  
Unit  
V
Input Voltage  
-40
~
6  
-70  
V
I

O  

mA  
mA  
mW  
℃
Output Current  
I

C(Max)  

P

D  

-100  
150  
Power Dissipation  
T

J  

Junction Temperature  
150  
T

stg  

Storage Temperature  
-55
~
150  
℃
Electrical Characteristics @ 25
 
℃ Unless
 
Otherwise Specified  
DTR1 NPN  
Symbol  
V

I(off)  

Parameter  
Input Voltage  
Output Voltage  
Test conditions  
V

CC

=5V, I

O

=100μA  
V

O

=0.3V, I

O

=1mA  
I

O

=5mA,I

I

=0.25mA  
Min  
Typ Max  
Unit  
V
0.3  
V

I(on)  

1.4  
0.3  
V
V

O(on)  

V
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 1 ~  

NPN+PNP Digital Transistor  
数字晶体管  
I

I  

I

O(off)  

G

I  

Input Current  
Output Current  
V

I

=5V  
0.88  
0.5  
mA  
V

CC

=50V, V

I

=0  
V

O

=5V, I

O

=5mA  
μA  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
68  
7
R

1  

10  
4.7  
250  
13  
KΩ  
R

2

/R

1  

f

T  

3.7  
5.7  
V

CE

=10V, I

E

=-5mA, f=100MHz  
MHz  
DTR2 PNP  
Symbol  
V

I(off)  

V

I(on)  

V

O(on)  

I

I  

Parameter  
Test conditions  
V

CC

=-5V, I

O

=-100μA  
V

O

=-0.3V, I

O

=-1mA  
I

O

=-5mA,I

I

=-0.25mA  
V

I

=-5V  
Min  
Typ Max  
Unit  
V
-0.3  
Input Voltage  
-1.4  
-0.3  
V
Output Voltage  
Input Current  
V
-0.88  
-0.5  
mA  
μA  
I

O(off)  

G

I  

Output Current  
V

CC

=-50V, V

I

=0  
V

O

=-5V, I

O

=-5mA  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
68  
7
R

1  

10  
4.7  
250  
13  
KΩ  
R

2

/R

1  

f

T  

3.7  
5.7  
V

CE

=-10V, I

E

=5mA, f=100MHz  
MHz  
Typical Characteristics  
DTR1 DC Current Gain Characteristics  
DTR1 Input Voltage (on) Characteristics  
DTR1 Output Voltage Characteristics  
DTR1 Input Voltage (off) Characteristics  
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 2 ~  

NPN+PNP Digital Transistor  
数字晶体管  
DTR2 DC Current Gain Characteristics  
DTR2 Input Voltage (on) Characteristics  
DTR2 Output Voltage Characteristics  
DTR2 Input Voltage (off) Characteristics  
Power Derating Curve  
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 3 ~  

NPN+PNP Digital Transistor  
数字晶体管  
ORDERING INFORMATION  
Device  
Package  
SOT363  
Shipping  
Tape  
wide  
Emboss  
pitch  
Tape  
Notes  
specification  
Tape & Reel  
UMD9N  
8mm  
4mm  
Conductive  
3000pcs /7” Reel  
PACKAGE DIMENSIONS  
Document Number:8010030  
Revision:21-Apr-28  
An hui Anmei Semiconductor Co.,Ltd.  
~ 4 ~