Analog-Devices-HMC395
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HMC395
v03.0523
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC – 4 GHz
Typical Applications
Features
An excellent cascadable 50 Ohm
Gain Block or LO Driver for:
Gain: 15 dB
2
P1dB Output Power: +16 dBm
Stable Gain Over Temperature
50 Ohm I/O’s
• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C
3
I
• Space Telecom
Small Size:
0.38 x 0.58 x 0.1 mm
Functional Diagram
General Description
The HMC395 die is a GaAs InGaP Heterojunction Bi-
polar Transistor (HBT) Gain Block MMIC DC – 4 GHz
amplifier. This amplifier die can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to
+
17 dBm output power. The
HMC395 offers 16 dB of gain and an output IP3 of +31
dBm while requiring only 54 mA from a +5V supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and yields ex-
cellent gain stability over temperature while requiring
a minimal number of external bias components. The
HMC395 can easily be integrated into Multi-Chip-
Modules (MCMs) due to its small (0.22mm
2
) size. All
data is with the chip in a 50 Ohm test fixture connected
via 0.025mm (1mil) diameter wire bonds of minimal
length 0.5mm (20mils).
Electrical Specifications,
Vs= +5.0V, Rbias= 22 Ohm, T
A
= +25° C
Parameter
Min.
Typ.
Max.
Units
DC – 1.0 GHz
1.0 – 4.0 GHz
16
15
dB
dB
Gain
DC – 1.0 GHz
1.0 – 4.0 GHz
0.004
0.008
dB/ °C
dB/ °C
Gain Variation Over Temperature
Input Return Loss
DC – 1.0 GHz
1.0 – 4.0 GHz
18
15
dB
dB
DC – 1.0 GHz
1.0 – 4.0 GHz
17
10
dB
dB
Output Return Loss
Reverse Isolation
DC – 4.0 GHz
19
dB
DC – 1.0 GHz
1.0 – 2.0 GHz
2.0 – 4.0 GHz
16
15
10
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
DC – 1.0 GHz
1.0 – 2.0 GHz
2.0 – 4.0 GHz
31
28
22
dBm
dBm
dBm
Noise Figure
DC – 4.0 GHz
4.5
54
dB
Supply Current (Icq)
mA
Note: Data
taken with broadband bias tee on device output.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
Analog Devices, Inc., One Analog Way, Wilmington, MA 01887
rights of third parties that may result from its use. S
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
2 – 1
Application Support: Phone: 1-800-ANALOG-D
HMC395
v03.0523
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC – 4 GHz
Gain & Return Loss
Gain vs. Temperature
20
20
15
10
5
2
17
S21
S11
S22
14
0
-5
+25C
+85C
-55C
11
8
-10
-15
-20
-25
5
0
1
2
3
4
5
5
5
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
-55C
-5
-10
-15
-20
-25
+25C
+85C
-55C
-5
-10
-15
-20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
+25C
+85C
-55C
-5
8
6
4
2
0
+25C
+85C
-55C
-10
-15
-20
-25
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Analog Way, Wilmington, MA 01887
2 – 2
Application Support: Phone: 1-800-ANALOG-D
HMC395
v03.0523
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC – 4 GHz
P1dB vs. Temperature
Psat vs. Temperature
20
20
2
+25C
+85C
-55C
17
14
11
8
17
14
11
+25C
+85C
-55C
8
5
5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 1 GHz
Power Compression @ 4 GHz
20
20
15
10
5
15
10
5
Pout
Gain
PAE
0
0
Pout
Gain
PAE
-5
-5
-10
-10
-20 -18 -16 -14 -12 -10
-8 -6 -4 -2
0
2
4
6
8
-20
-16
-12
-8
-4
0
4
INPUT POWER (dBm)
INPUT POWER (dBm)
Gain, Power, Output IP3 & Supply
Output IP3 vs. Temperature
Current vs.Supply Voltage @ 1 GHz
80
40
34
35
30
25
20
15
30
26
60
40
20
0
22
+25C
+85C
-55C
18
14
10
10
5
Gain
P1dB
Psat
Icq
OIP3
0
4.5
4.75
5
5.25
5.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Vs(Vdc)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Analog Way, Wilmington, MA 01887
2 – 3
Application Support: Phone: 1-800-ANALOG-D
HMC395
v03.0523
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC – 4 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+7.0 Vdc
2
RF Input Power (RFIN)(Vcc = +5.0 Vdc)
+10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate
7
.
3 mW/°C above 85 °C)
0.475 W
Thermal Resistance
(junction to die bottom)
137 °C/W
Storage Temperature
Operating Temperature
-65 to
+
150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE
0.001 (0.025)
3. DIE THICKNESS IS 0.004” (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004” (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7.
B
OND PAD METALLIZATION: GOLD
Die Packaging Information
[1]
Standard
Alternate
GP-3 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Analog
Devices, Inc.
For price, delivery, and to place orders: Analog Devices, Inc., One Analog Way, Wilmington, MA 01887
2 – 4
Application Support: Phone: 1-800-ANALOG-D
HMC395
v03.0523
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC – 4 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
2
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
RFIN
RF output and DC Bias for the output stage.
2
RFOUT
GND
Die
Bottom
Die bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
>
R
bias 22
Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs – 3.9
Rbias
Recommended Component Values
Frequency (MHz)
Component
50
100
500
1000
4000
L1
270 nH
0.01 µF
270 nH
0.01 µF
100 nH
500 pF
56 nH
8.2 nH
100 pF
C1, C2
100 pF
For price, delivery, and to place orders: Analog Devices, Inc., One Analog Way, Wilmington, MA 01887
2 – 5
Application Support: Phone: 1-800-ANALOG-D
HMC395
v03.0523
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC – 4 GHz
Assembly Diagram
2
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage:
All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against
ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The
mounting surface should be clean and flat.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire.
Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended.
Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All
bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders: Analog Devices, Inc., One Analog Way, Wilmington, MA 01887
2 – 6
Application Support: Phone: 1-800-ANALOG-D
