Analog-Devices-HMC465
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HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Features
Typical Applications
The HMC465 wideband driver is ideal for:
• OC192 LN/MZ Modulator Driver
• Telecom Infrastructure
Gain: 17 dB
Output Voltage to 10 Vp-p
Saturated Output Power: +24 dBm
Supply Voltage: +8V @160mA
50 Ohm Matched Input/Output
Die Size: 3.04 x 1.56 x 0.1 mm
• Test Instrumentation
• Military & Space
Functional Diagram
General Description
The HMC465 is a GaAs MMIC pHEMT Distributed
Driver Amplifier die which operates between DC and
20 GHz. The amplifier provides 17 dB of gain, 2.5 dB
noise figure and +24 dBm of saturated output power
while requiring only 160 mA from a +8V supply. Gain
flatness is excellent at
0.25 dB as well as
1 deg
deviation from linear phase from DC – 10 GHz making
the HMC465 ideal for OC192 fiber optic LN/MZ mod-
ulator driver amplifier as well as test equipment appli-
cations. The HMC465 amplifier I/Os are internally
matched to 50 Ohms for easy integration into Multi-
Chip-Modules (MCMs). All data is measured with
the chip in a 50 Ohm test fixture connected via
0.025 mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Specifications,
T
A
= +25 °C, Vdd = 8V, Vgg2 = 1.5V, Idd = 160mA*
Parameter
Frequency Range
Min.
T
y
p.
DC – 6
18
Max.
Min.
T
y
p.
6 – 12
17
Max.
Min.
T
y
p.
12 – 20
16.5
0.5
0.02
3
Max.
Units
GHz
dB
Gain
15
15
13
Gain Flatness
0.5
0.015
3
0.25
0.015
2.5
20
dB
Gain Variation Over
T
e
mperature
Noise Figure
0.025
5
0.025
3.5
0.03
4.5
dB/ °C
dB
Input Return Loss
18
16
dB
Output Return Loss
18
17
17
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Saturated Output Voltage
Group Delay Variation
19.5
22.5
24
19
22
17
20
dBm
dBm
dBm
Vp-p
ps
24
22
33
30
26
10
10
8
3
3
3
Supply Current
(Idd) (Vdd = 8
V
,
V
gg1 = -0.6V
T
y
p.)
160
160
160
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd = 160mA typical.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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1
Application Support: Phone: 1-800-ANALOG-D
HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Gain & Return Loss
20
Gain vs. Temperature
20
10
0
16
12
8
-10
-20
-30
4
0
0
4
8
12
16
20
24
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
S11
FREQUENCY (GHz)
+85C
S21
S22
+25C
-55C
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+85C
FREQUENCY (GHz)
+85C
+25C
-55C
+25C
-55C
Low Frequency Gain & Return Loss
30
Noise Figure vs. Temperature
8
7
6
5
4
3
2
1
0
20
10
0
-10
-20
-30
-40
0.00001
0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
S11
FREQUENCY (GHz)
+85C
S21
S22
+25C
-55C
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r
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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2
Application Support: Phone: 1-800-ANALOG-D
HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Output P1dB vs. Temperature
30
Psat vs. Temperature
30
26
22
18
14
10
26
22
18
14
10
0
2
4
6
8
10
12
14
16
18
20
22
22
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+85C
FREQUENCY (GHz)
+85C
+25C
-55C
+25C
-55C
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Idd= 160mA
Output IP3 vs. Temperature
40
40
35
30
25
20
15
10
5
36
32
28
24
20
0
0
2
4
6
8
10
12
14
16
18
20
5.5
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
+85C
Vdd SUPPLY VOLTAGE (V)
+25C
-55C
Gain
P1dB
Psat
IP3
Deviation from Linear Phase
Group Delay
0
5
-20
-40
3
1
-60
-1
-3
-5
-80
-100
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
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r
o
th
e
r
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks ar
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3
Application Support: Phone: 1-800-ANALOG-D
HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Vdd (V)
+7.5
Idd (mA)
161
Drain Bias Voltage (Vdd)
+9V
Gate Bias Voltage (Vgg1)
Gate Bias Current (Igg1)
-2 to 0V
+3.2mA
+8.0
160
+8.5
159
Gate Bias Voltage (Vgg2)
Gate Bias Current (Igg2)
(Vdd -8) V to +3 Vdc
+3.2mA
RF Input Power (RFIN)(Vdd = +8V)
Channel Temperature
+23 dBm
175 °C
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
2.17 W
Thermal Resistance
(channel to die bottom)
41.5 °C/W
Storage Temperature
Operating Temperature
-65 to
+
150 °C
-55 to +85 °C
Outline Drawing
Die Packaging Information
[1]
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
Standard
Alternate
GP-1 (Gel Pack)
[2]
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
7.
B
OND PAD METALIZATION: GOLD
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a
te
n
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o
th
e
r
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks ar
e
t
h
e
p
r
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4
Application Support: Phone: 1-800-ANALOG-D
HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Pad Descriptions
Pad Number
Function
RFIN
Description
Pin Schematic
1
2
This pad is DC coupled and matched to 50 Ohms.
Gate Control 2 for amplifier. +1.5V should be applied to
Vgg2 for nominal operation.
Vgg2
3
4
ACG1
ACG2
Low frequency termination. Attach bypass capacitor
per application circuit herein.
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
5
6
RFOUT & Vdd
ACG3
Low frequency termination. Attach bypass capacitor
per application circuit herein.
7
ACG4
8
Vgg1
GND
Gate Control 1 for amplifier.
Die Bottom
Die botton must be connected to RF/DC ground.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks ar
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Application Support: Phone: 1-800-ANALOG-D
HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Assembly Diagram
Application Circuit
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n
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th
e
r
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks ar
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6
Application Support: Phone: 1-800-ANALOG-D
HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Device Operation
These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
The input to this device should be AC-coupled. To provide the typical 8Vp-p output voltage swing, a 1.2Vp-p
AC-coupled input voltage swing is required.
1. Ground the device
2. Set Vgg1 to -2V (no drain current)
3. Set Vgg2 to +1.5V (no drain current)
4. Set Vdd to +8V (no drain current)
5. Adjust Vgg1 for Idd = 160mA (Vgg1 may be varied between -2V and 0V to set Idd to 160mA)
6. Apply RF signal to input.
Device Power Down Instructions
1. Remove RF signal from input
2. Remove Vdd
3. Remove Vgg2
4. Remove Vgg1
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
7
Application Support: Phone: 1-800-ANALOG-D
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HMC465
v09.0114
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC – 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0
.
127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0
.
102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage:
All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity:
Follow ESD precautions to protect against >
250V
ESD strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients:
Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
8
Application Support: Phone: 1-800-ANALOG-D
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