Analog-Devices-HMC8413LP2FE
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Low Noise Amplifier,
0.01 GHz to 9 GHz
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
HMC8413
Low noise figure: 1.9 dB typical at 0.01 GHz to 7 GHz
Single positive supply (self biased)
High gain: 19.5 dB typical at 0.01 GHz to 7 GHz
High OIP3: 35 dBm typical at 0.01 GHz to 7 GHz
R
NC
6
1
2
BIAS
RF
5 RF
/V
OUT DD
IN
GND 3
4 GND
Figure 1.
APPLICATIONS
Test instrumentation
Military communications
Military radar
Telecommunications
GENERAL DESCRIPTION
The HMC8413 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.01 GHz to 9 GHz.
Analog Devices, Inc., balanced, in-phase/quadrature (I/Q) or
image rejection mixers.
The HMC8413 also features inputs and outputs that are internally
matched to 50 Ω, making the device ideal for surface-mounted
technology (SMT)-based, high capacity microwave radio
applications.
The HMC8413 provides a typical gain of 19.5 dB, a 1.9 dB
typical noise figure, and a typical output third-order intercept
(OIP3) of 35 dBm at 0.01 GHz to 7 GHz, requiring only 95 mA
from a 5 V supply voltage. The saturated output power (P
SAT
) of
22 dBm typical at 0.01 GHz to 7 GHz enables the low noise
amplifier to function as a local oscillator (LO) driver for many of
Multifunction pin names may be referenced by their relevant
function only.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice.
No license is granted by implication or otherwise under any patent or patent rights of Analog
Devices. Trademarks and registere
d
t
rademarks are the property of thei
r
r
espective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2021 Analog Devices, Inc. All rights reserved.
Data Sheet
TABLE OF CONTENTS
REVISION HISTORY
10/2021—Revision 0: Initial Version
Rev. 0 | Page 2 of 21
Data Sheet
SPECIFICATIONS
0.01 GHz TO 7 GHz FREQUENCY RANGE
V
DD
= 5 V, supply current (I
DQ
) = 95 mA, R
BIAS
= 787 Ω, and T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter
Min
0.01
17.5
Typ
Max
Unit
GHz
dB
dB/°C
dB
Test Conditions/Comments
FREQUENCY RANGE
7
GAIN
19.5
0.013
1.9
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
15
18
dB
dB
OUTPUT
Output Power for 1 dB Compression (OP1dB)
P
SAT
OIP3
19
21.5
22
35
dBm
dBm
dBm
Measurement taken at output power (P
OUT
) per
tone = 5 dBm
Output Second-Order Intercept (OIP2)
39
37
dBm
%
Measurement taken at P
OUT
per tone = 5 dBm
Measured at P
SAT
POWER ADDED EFFICIENCY (PAE)
SUPPLY
I
DQ
V
DD
95
5
mA
V
2
6
7 GHz TO 9 GHz FREQUENCY RANGE
V
DD
= 5 V, I
DQ
= 95 mA, R
BIAS
= 787 Ω, and T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter
Min
7
Typ
Max
Unit
GHz
dB
Test Conditions/Comments
FREQUENCY RANGE
9
GAIN
17
19
Gain Variation over Temperature
0.02
2.8
dB/°C
dB
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
OP1dB
P
SAT
12
15
dB
dB
16.5
19
21
33
45
22
dBm
dBm
dBm
dBm
%
OIP3
OIP2
Measurement taken at P
OUT
per tone = 5 dBm
Measurement taken at P
OUT
per tone = 5 dBm
Measured at P
SAT
PAE
SUPPLY
I
DQ
V
DD
95
5
mA
V
2
6
Rev. 0 | Page 3 of 21
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 3.
Parameter
V
DD
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Close attention to
PCB thermal design is required.
Rating
7 V
25 dBm
1.25 W
RF
IN
Power
Continuous Power Dissipation (P
DISS
), T
A
= 85°C
(Derate 13.9 mW/°C Above 85°C)
θ
JC
is the junction to case thermal resistance.
Temperature
Storage Range
Operating Range
Peak Reflow (Moisture Sensitivity Level 1
(MSL1))
Table 4. Thermal Resistance
Package Type
−65°C to +150°C
−40°C to +85°C
260°C
θ
JC
Unit
CP-6-12
72
°C/W
ELECTROSTATIC DISCHARGE (ESD) RATINGS
Junction to Maintain 1,000,000 Hours Mean
Time to Failure (MTTF)
Nominal Junction (T
A
= 85°C, V
DD
= 5 V,
175°C
The following ESD information is provided for handling of
ESD-sensitive devices in an ESD protected area only.
119.2°C
Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.
I
DQ
= 95 mA)
ESD Ratings for HMC8413
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
Table 5. HMC8413, 6-Lead LFCSP
ESD Model
Withstand Threshold (V)
Class
HBM
500
1B
ESD CAUTION
Rev. 0 | Page 4 of 21
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC8413
TOP VIEW
(Not to Scale)
R
NC
6
1
2
BIAS
RF
5 RF
/V
OUT DD
IN
GND 3
4 GND
NOTES
1. NC = NO CONNEC
T
.
T
HIS PIN IS NOT
CONNECTED INTERNAL
L
Y.
T
HIS PIN MUST BE
CONNECTED TO THE RF AND DC GROUND.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO THE RF AND DC GROUND.
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
Mnemonic Description
1
R
BIAS
Current Mirror Bias Resistor. Use the R
BIAS
pin via the external resistor (R2, s
ee Figure 71)
to set the current to the
2
3, 4
5
RF
IN
GND
RF
OUT
/V
DD
RF Output/Drain Bias for the Amplifier. The RF
OUT
/V
DD
pin is dc-coupled and matched to 50 Ω. S
ee Figure 5
for the
interface schematic.
6
NC
EPAD
No Connect. This pin is not connected internally. This pin must be connected to the RF and dc ground.
Exposed Pad. The exposed pad must be connected to the RF and dc ground.
INTERFACE SCHEMATICS
R
BIAS
RF
/V
OUT DD
Figure 3. R
BIAS
Interface Schematic
Figure 5. RF
OUT
/V
DD
Interface Schematic
RF
IN
GND
Figure 4. RF
IN
Interface Schematic
Figure 6. GND Interface Schematic
Rev. 0 | Page 5 of 21
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
I
DQ
is the collector current without RF signal applied, and I
DD
is the collector current with RF signal applied.
25
20
25
20
15
15
10
10
5
5
S22
S21
S11
S22
S21
S11
0
0
–5
–5
–10
–15
–20
–10
–15
–20
0
2
4
6
8
10
12
14
0
20
40
60
80
100 120 140 160 180 200
FREQUENCY (GHz)
FREQUENCY (MHz)
Figure 7. Broadband Gain and Return Loss vs. Frequency, 200 MHz to 14 GHz,
Figure 10. Gain and Return Loss vs. Frequency, 10 MHz to 200 MHz, V
DD
= 5 V,
V
DD
= 5 V, I
DQ
= 95 mA (S22 Is the Output Return Loss, S21 Is the Gain, and S11
Is the Input Return Loss)
I
DQ
= 95 mA
24
22
20
18
16
24
22
20
18
16
14
12
10
8
14
12
10
8
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
6
6
4
4
2
2
0
20
40
60
80
100 120 140 160 180 200
0
2
4
6
8
10
12
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency for Various Temperatures, 10 MHz to 200 MHz,
V
DD
= 5 V, I
DQ
= 95 mA
Figure 11. Gain vs. Frequency for Various Temperatures, 200 MHz to 12 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
25
20
15
25
20
15
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
10
5
10
5
787Ω, I
540Ω, I
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Gain vs. Frequency for Various Bias Resistor Values and I
DQ
, V
DD
= 5 V
Figure 9. Gain vs. Frequency for Various Supply Voltages and I
DQ
, R
BIAS
= 787 Ω
Rev. 0 | Page 6 of 21
Data Sheet
0
0
–5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
–5
–10
–15
–20
–10
–15
–20
0
20
40
60
80
100 120 140 160 180 200
0
2
4
6
8
10
12
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 13. Input Return Loss vs. Frequency for Various Temperatures,
10 MHz to 200 MHz, V
DD
= 5 V, I
DQ
= 95 mA
Figure 16. Input Return Loss vs. Frequency for Various Temperatures,
200 MHz to 12 GHz, V
DD
= 5 V, I
DQ
= 95 mA
0
0
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
787Ω, I
540Ω, I
–5
–10
–15
–20
–5
–10
–15
–20
0
2
4
6
8
10
12
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 17. Input Return Loss vs. Frequency for Various Bias Resistor Values and I
DQ
,
Figure 14. Input Return Loss vs. Frequency for Various Supply Voltages and I
DQ
,
V
DD
= 5 V
R
BIAS
= 787 Ω
0
0
–5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
–5
–10
–15
–20
–10
–15
–20
0
2
4
6
8
10
12
0
20
40
60
80
100 120 140 160 180 200
FREQUENCY (GHz)
FREQUENCY (MHz)
Figure 18. Output Return Loss vs. Frequency for Various Temperatures,
200 MHz to 12 GHz, V
DD
= 5 V, I
DQ
= 95 mA
Figure 15. Output Return Loss vs. Frequency for Various Temperatures,
10 MHz to 200 MHz, V
DD
= 5 V, I
DQ
= 95 mA
Rev. 0 | Page 7 of 21
Data Sheet
0
0
–5
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
787Ω, I
540Ω, I
–5
–10
–15
–10
–15
–20
–20
0
0
2
4
6
8
10
12
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 22. Output Return Loss vs. Frequency for Various Bias Resistor Values
and I
DQ
, V
DD
= 5 V
Figure 19. Output Return Loss vs. Frequency for Various Supply Voltages and I
DQ
,
R
BIAS
= 787 Ω
0
0
–5
+85°C
+85°C
+25°C
–40°C
+25°C
–5
–40°C
–10
–10
–15
–20
–25
–30
–15
–20
–25
–30
0
2
4
6
8
10
12
0
20
40
60
80
100 120 140 160 180 200
FREQUENCY (GHz)
FREQUENCY (MHz)
Figure 23. Reverse Isolation vs. Frequency for Various Temperatures,
200 MHz to 12 GHz, V
DD
= 5 V, I
DQ
= 95 mA
Figure 20. Reverse Isolation vs. Frequency for Various Temperatures,
10 MHz to 200 MHz, V
DD
= 5 V, I
DQ
= 95 mA
0
0
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
–5
–10
–15
–20
–25
–30
–5
–10
–15
–20
–25
–30
787Ω, I
540Ω, I
0
2
4
6
8
10
12
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 24. Reverse Isolation vs. Frequency for Various Bias Resistor Values
and I
DQ
, V
DD
= 5 V
Figure 21. Reverse Isolation vs. Frequency for Various Supply Voltages and I
DQ
,
R
BIAS
= 787 Ω
Rev. 0 | Page 8 of 21
Data Sheet
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
0
20
40
60
80
100 120 140 160 180 200
0
2
4
6
8
10
12
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 25. Noise Figure vs. Frequency for Various Temperatures,
10 MHz to 200 MHz, V
DD
= 5 V, I
DQ
= 95 mA
Figure 28. Noise Figure vs. Frequency for Various Temperatures,
200 MHz to 12 GHz, V
DD
= 5 V, I
DQ
= 95 mA
10
10
9
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
9
8
7
6
5
4
3
2
1
0
DQ
DQ
DQ
DQ
DQ
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100 120 140 160 180 200
0
2
4
6
8
10
12
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 26. Noise Figure vs. Frequency for Various Supply Voltages and I
DQ
,
Figure 29. Noise Figure vs. Frequency for Various Supply Voltages and I
DQ
,
10 MHz to 200 MHz, R
BIAS
= 787 Ω
200 MHz to 12 GHz, R
BIAS
= 787 Ω
10
9
10
9
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
787Ω, I
540Ω, I
787Ω, I
540Ω, I
0
20
40
60
80
100 120 140 160 180 200
0
2
4
6
8
10
12
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 27. Noise Figure vs. Frequency for Various Bias Resistor Values and I
DQ
,
Figure 30. Noise Figure vs. Frequency for Various Bias Resistor Values and I
DQ
,
10 MHz to 200 MHz, V
DD
= 5 V
200 MHz to 12 GHz, V
DD
= 5 V
Rev. 0 | Page 9 of 21
Data Sheet
25
20
15
10
5
25
20
15
10
5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 31. OP1dB vs. Frequency for Various Temperatures, 0.01 GHz to 1.0 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
Figure 34. OP1dB vs. Frequency for Various Temperatures, 1 GHz to 12 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
25
20
15
10
25
20
15
10
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
5
0
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 32. OP1dB vs. Frequency for Various Supply Voltages and I
DQ
,
Figure 35. OP1dB vs. Frequency for Various Supply Voltages and I
DQ
,
0.01 GHz to 1.0 GHz, R
BIAS
= 787 Ω
1 GHz to 12 GHz, R
BIAS
= 787 Ω
25
20
15
10
25
20
15
10
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
787Ω, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
787Ω, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
5
0
5
0
540Ω, I
540Ω, I
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 33. OP1dB vs. Frequency for Various Bias Resistor Values and I
DQ
,
Figure 36. OP1dB vs. Frequency for Various Bias Resistor Values and I
DQ
,
0.01 GHz to 1.0 GHz, V
DD
= 5 V
1 GHz to 12 GHz, V
DD
= 5 V
Rev. 0 | Page 10 of 21
Data Sheet
25
20
15
10
5
25
20
15
10
5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 37. P
SAT
vs. Frequency for Various Temperatures, 0.01 GHz to 1.0 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
Figure 40. P
SAT
vs. Frequency for Various Temperatures, 1 GHz to 12 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
28
24
20
16
12
28
24
20
16
12
8
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
8
4
0
DQ
DQ
DQ
DQ
DQ
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
4
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
5
6
7
8
9
10
11
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 38. P
SAT
vs. Frequency for Various Supply Voltages and I
DQ
,
Figure 41. P
SAT
vs. Frequency for Various Supply Voltages and I
DQ
,
0.01 GHz to 1.0 GHz, R
BIAS
= 787 Ω
1 GHz to 12 GHz, R
BIAS
= 787 Ω
25
20
15
10
25
20
15
10
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
5
0
5
0
787Ω, I
540Ω, I
787Ω, I
540Ω, I
0
2
4
6
8
10
12
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 42. P
SAT
vs. Frequency for Various Bias Resistor Values and I
DQ
,
Figure 39. P
SAT
vs. Frequency for Various Bias Resistor Values and I
DQ
,
1 GHz to 12 GHz, V
DD
= 5 V
0.01 GHz to 1.0 GHz, V
DD
= 5 V
Rev. 0 | Page 11 of 21
Data Sheet
60
50
40
30
20
10
0
60
50
40
30
20
10
0
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 43. PAE vs. Frequency for Various Temperatures, 0.01 GHz to 1.0 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
Figure 46. PAE vs. Frequency for Various Temperatures, 1 GHz to 12 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
50
45
40
35
30
25
20
15
10
5
120
100
80
60
40
20
0
50
45
40
35
30
25
20
15
10
5
104
103
102
101
100
99
P
GAIN
PAE
OUT
I
DD
P
GAIN
PAE
OUT
I
DD
98
97
96
0
–20
0
–20
95
–17
–14
–11
–8
–5
–2
1
4
7
–17
–14
–11
–8
–5
–2
1
4
7
INPUT POWER (dBm)
INPUT POWER (dBm)
Figure 44. P
OUT
, Gain, PAE, and I
DD
vs. Input Power,
Power Compression at 1 GHz, V
DD
= 5 V, R
BIAS
= 787 Ω
Figure 47. P
OUT
, Gain, PAE, and I
DD
vs. Input Power,
Power Compression at 5 GHz, V
DD
= 5 V, R
BIAS
= 787 Ω
50
45
40
35
30
25
20
15
10
5
115
25
170
P
GAIN
PAE
OUT
110
105
100
95
20
15
10
5
140
110
80
I
DD
90
85
80
OP1dB
P
75
50
SAT
GAIN
I
70
DD
0
–20
65
0
20
–17
–14
–11
–8
–5
–2
1
4
7
2
3
4
5
6
INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
Figure 45. P
OUT
, Gain, PAE, and I
DD
vs. Input Power,
Power Compression at 9 GHz, V
DD
= 5 V, R
BIAS
= 787 Ω
Figure 48. OP1dB, P
SAT
, Gain, and I
DD
vs. Supply Voltage,
Power Compression at 1 GHz, R
BIAS
= 787 Ω
Rev. 0 | Page 12 of 21
Data Sheet
25
20
15
10
5
140
120
100
80
25
20
15
10
5
140
120
100
80
60
60
40
40
OP1dB
OP1dB
P
P
SAT
SAT
GAIN
GAIN
20
20
0
I
I
DD
DD
0
2
0
0
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 49. OP1dB, P
SAT
, Gain, and I
DD
vs. Supply Voltage,
Power Compression at 5 GHz, R
BIAS
= 787 Ω
Figure 52. OP1dB, P
SAT
, Gain, and I
DD
vs. Supply Voltage,
Power Compression at 9 GHz, R
BIAS
= 787 Ω
50
50
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
15
10
5
0
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 53. OIP3 vs. Frequency for Various Temperatures, 1 GHz to 12 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
Figure 50. OIP3 vs. Frequency for Various Temperatures, 0.01 GHz to 1.0 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
50
45
40
35
30
25
20
15
50
45
40
35
30
25
20
15
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
10
5
10
5
0
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 54. OIP3 vs. Frequency for Various Supply Voltages and I
DQ
,
Figure 51. OIP3 vs. Frequency for Various Supply Voltages and I
DQ
,
1 GHz to 12 GHz, R
BIAS
= 787 Ω
0.01 GHz to 1.0 GHz, R
BIAS
= 787 Ω
Rev. 0 | Page 13 of 21
Data Sheet
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
787Ω, I
540Ω, I
787Ω, I
540Ω, I
0
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 55. OIP3 vs. Frequency for Various Bias Resistor Values and I
DQ
,
Figure 58. OIP3 vs. Frequency for Various Bias Resistor Values and I
DQ
,
0.01 GHz to 1.0 GHz, V
DD
= 5 V
1 GHz to 12 GHz, V
DD
= 5 V
60
50
40
30
60
50
40
30
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
20
10
0
20
10
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 56. OIP2 vs. Frequency for Various Temperatures, 0.01 GHz to 1.0 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
Figure 59. OIP2 vs. Frequency for Various Temperatures, 1 GHz to 12 GHz,
V
DD
= 5 V, I
DQ
= 95 mA
60
50
40
30
20
60
50
40
30
20
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
6V, I
5V, I
4V, I
3V, I
2V, I
= 120mA
= 95mA
= 70mA
= 47mA
= 25mA
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
10
0
10
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 57. OIP2 vs. Frequency for Various Supply Voltages and I
DQ
,
Figure 60. OIP2 vs. Frequency for Various Supply Voltages and I
DQ
,
0.01 GHz to 1.0 GHz, R
BIAS
= 787 Ω
1 GHz to 12 GHz, R
BIAS
= 787 Ω
Rev. 0 | Page 14 of 21
Data Sheet
60
50
40
30
20
10
0
60
50
40
30
20
10
0
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
6.7kΩ, I
3.6kΩ, I
1.9kΩ, I
1.2kΩ, I
= 25mA
= 35mA
= 55mA
= 75mA
= 95mA
= 115mA
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
787Ω, I
540Ω, I
787Ω, I
540Ω, I
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 61. OIP2 vs. Frequency for Various Bias Resistor Values and I
DQ
,
Figure 64. OIP2 vs. Frequency for Various Bias Resistor Values and I
DQ
,
0.01 GHz to 1.0 GHz, V
DD
= 5 V
1 GHz to 12 GHz, V
DD
= 5 V
115
0.6
0.5
9GHz
5GHz
1GHz
110
105
100
95
0.4
90
9GHz
0.3
85
5GHz
1GHz
80
0.2
75
70
0.1
65
60
0
–20
55
–10
–16
–12
–8
–4
0
4
8
–6
–2
2
6
10
14
INPUT POWER (dBm)
INPUT POWER (dBm)
Figure 65. I
DD
vs. Input Power for Various Frequencies, V
DD
= 5 V
Figure 62. P
DISS
vs. Input Power at T
A
= 85°C, V
DD
= 5 V, I
DQ
= 95 mA
140
120
100
80
100
90
80
70
60
50
60
40
40
30
20
20
300
400
500
600
700
800
900
1000
1
2
3
4
5
6
7
8
9
10
11
12
BIAS RESISTOR VALUE (Ω)
BIAS RESISTOR VALUE (kΩ)
Figure 63. I
DQ
vs. Bias Resistor Value, 300 Ω to 1 kΩ, V
DD
= 5 V
Figure 66. I
DQ
vs. Bias Resistor Value, 1 kΩ to 12 kΩ, V
DD
= 5 V
Rev. 0 | Page 15 of 21
Data Sheet
120
110
100
90
80
70
60
50
40
30
20
10
0
60
55
50
45
40
35
30
25
20
15
10
5
0
0
100 200 300 400 500 600 700 800 900
1000
BIAS RESISTOR VALUE (Ω)
1
2
3
4
5
6
7
8
9
10
11
12
BIAS RESISTOR VALUE (kΩ)
Figure 67. I
DQ
vs. Bias Resistor Value, 1 Ω to 1 kΩ, V
DD
= 3 V
Figure 69. I
DQ
vs. Bias Resistor Value, 1 kΩ to 12 kΩ, V
DD
= 3 V
200
175
150
125
100
75
50
25
0
–25
0
1
2
3
4
5
6
7
SUPPLY VOLTAGE (V)
Figure 68. I
DQ
vs. Supply Voltage, R
BIAS
= 787 Ω
Rev. 0 | Page 16 of 21
Data Sheet
THEORY OF OPERATION
The HMC8413 is a GaAs, MMIC, pHEMT, low noise wideband
HMC8413.
To achieve optimal performance from the HMC8413 and
prevent damage to the device, do not exceed the absolute
maximum ratings.
The HMC8413 has single-ended input and output ports with
impedances that nominally equal 50 Ω over the 0.01 GHz to
9 GHz frequency range. Therefore, the HMC8413 can be directly
inserted into a 50 Ω system with no required impedance
matching circuitry, which also means that multiple HMC8413
amplifiers can be cascaded back to back without the need for
external matching circuitry.
The R
BIAS
pin is used to set the I
DQ
with an external resistor,
allowing single positive supply operation.
R
BIAS
RF
RF
/V
OUT DD
IN
Figure 70. Simplified Architecture
It is critical to supply very low inductance ground connections
to the ground pins as well as to the backside exposed pad to
ensure stable operation.
Rev. 0 | Page 17 of 21
Data Sheet
APPLICATIONS INFORMATION
Figure 71
shows the basic connections for operating the
HMC8413. AC couple the input and output of the HMC8413
with appropriately sized capacitors (American Technical
Ceramics, 531Z104KTR16T). Use an appropriate bias tee on the
RF
OUT
/V
DD
pin to provide both ac and dc coupling to the
RF
OUT
/V
DD
pin. A 5 V dc bias is supplied to the amplifier through
the choke inductor connected to the RF
OUT
/V
DD
pin. The
recommended bias inductor is the Coilcraft® 0402DF-901XJRE,
0.9 μH.
RECOMMENDED BIAS SEQUENCING
During Power-Up
The recommended bias sequence during power-up is as follows:
1. Set
V
DD
to 5 V.
2. Apply
the RF signal.
During Power-Down
The recommended bias sequence during power-down is as follows:
1. Turn
off the RF signal.
2. Set
V
DD
to 0 V.
The shunt resistor, inductor, capacitor (RLC) network on the
input of the HMC8413 adds resistive loss to help stabilize the
amplifier by reducing the gain at low frequencies. The shunt
inductor makes the resistor frequency dependent. At low
frequencies, the resistor becomes more active. The resistor has
less influence at higher frequencies where the impedance of the
choke is high. The capacitor blocks dc voltages and currents
from flowing through the resistor and the inductor.
Table 7. Recommended Bias Resistor Values
Total Current,
DQ
(mA)
Amplifier Current,
R
BIAS
Current,
I
DQ AMP
(mA)
RBIAS
(mA)
R
BIAS
(Ω)
440
490
540
590
650
710
787
I
_
I
125
120
115
110
105
100
95
120.55
115.74
110.94
106.13
101.32
96.51
91.7
4.45
4.26
4.06
3.87
3.68
3.49
3.3
The bias condition, V
DD
= 5 V and I
DQ
= 95 mA, is the
recommended operating point to achieve optimum performance.
shows the recommended bias resistor values and their associated
quiescent current.
890
90
86.89
82.07
77.26
72.45
67.63
62.81
57.99
53.17
48.36
43.54
38.72
33.91
29.12
24.37
19.62
3.11
2.93
2.74
2.55
2.37
2.19
2.01
1.83
1.64
1.46
1.28
1.09
0.88
0.63
0.38
990
85
V
DD
1100
1200
1360
1520
1700
1900
2240
2600
3080
3600
4780
6700
11900
80
75
70
65
60
55
50
45
40
35
30
25
C4
0.1µF
C3
10pF
GND
R2
787Ω
HMC8413
L2
0.9µH
1
6
5
4
C1
C5
RF
2
3
RF
OUT
IN
0.1µF
0.1µF
L1
0.14µH
GND
GND
R1
15Ω
20
C2
0.1µF
GND
Figure 71. Typical Application Circuit
Rev. 0 | Page 18 of 21
Data Sheet
EXTENDING OPERATION BELOW 10 MHz
The operation of the HMC8413 can be extended below 10 MHz
by adding a 10 μH inductor (Coilcraft 0603AF-103XJE) and 1 kΩ
shunt resistor. The 10 μH inductor and 1 kΩ shunt are placed
in series with the 0.9 μH inductor (Coilcraft 0402DF-901XJRE)
for operation below 10 MHz.
25
20
15
10
S11
S21
S22
5
0
–5
25
–10
–15
–20
20
15
10
0
20
40
60
80
100 120 140 160 180 200
S11
5
0
S21
S22
FREQUENCY (MHz)
Figure 73. Gain and Return Loss vs. Frequency, 1 MHz to 200 MHz,
V
DD
= 5 V, I
DQ
= 95 mA
–5
–10
–15
–20
–25
0
1
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
Figure 72. Gain and Return Loss vs. Frequency, 1 MHz to 9 GHz, V
DD
= 5 V,
I
DQ
= 95 mA
V
DD
C4
0.1µF
C3
10pF
GND
R3
1kΩ
R2
787Ω
L3
10µH
L2
0.9µH
HMC8413
1
2
3
6
5
4
C5
0.1µF
C1
RF
IN
RF
OUT
0.1µF
L1
0.14µH
GND
GND
R1
15Ω
C2
0.1µF
GND
Figure 74. Application Circuit for Operation Below 10 MHz
Rev. 0 | Page 19 of 21
Data Sheet
The HMC8413 can be powered by using a well regulated power
source. The LT3470A micropower, step-down, dc-to-dc converter
is recommended to provide a 5 V supply to RF
OUT
/V
DD
. The
regulator is designed for a wide input voltage range while
maintaining a high efficiency and high power supply modulation
ratio (PSMR). Using the LT3470A as a power supply for the
HMC8413 results in high PSMR, and dynamic performance is
circuit for the HMC8413 using the LT3470A regulator.
V
IN
5.7V TO 40V
V
BOOST
IN
V
LT3470A
DD
SW
OFF ON
22µF
SHDN
BIAS
C4
604kΩ
1%
22µF
22µF
FB
0.1µF
C3
GND
200kΩ
1%
10pF
GND
R2
787Ω
HMC8413
L2
0.9µH
1
6
C1
0.1µF
C5
RF
2
3
5
4
RF
IN
OUT
0.1µF
L1
0.14µH
GND
GND
R1
15Ω
C2
0.1µF
GND
Figure 75. Application Circuit for the HMC8413 Using the LT3470A Regulator
Rev. 0 | Page 20 of 21
Data Sheet
OUTLINE DIMENSIONS
DETAIL A
(JEDEC 95)
1.70
1.60
1.50
2.05
2.00 SQ
1.95
0.65
BSC
5
8
PIN 1 INDEX
1.10
1.00
0.90
AREA
EXPOSED
PAD
PIN 1
IONS
INDIC
A
T
OR
A
R
E
A
O
P T
4
1
0.30
0.25
0.20
(SEE DETAIL A)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
1.30 REF
0.90
0.85
0.80
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SECTION OF THIS DATA SHEET.
0.35
0.30
0.25
SEATING
PLANE
0.203 REF
Figure 76. 6-Lead Lead Frame Chip Scale Package [LFCSP]
2 mm × 2 mm Body and 0.85 mm Package Height
(CP-6-12)
Dimensions shown in millimeters
ORDERING GUIDE
Model
1, 2
Temperature Range
MSL Rating
3
MSL1
Package Description
4
Package Option
HMC8413LP2FE
−40°C to +85°C
6-Lead Lead Frame Chip Scale Package [LFCSP]
6-Lead Lead Frame Chip Scale Package [LFCSP]
Evaluation Board
CP-6-12
CP-6-12
HMC8413LP2FETR −40°C
to +85°C
EV1HMC8413LP2F
MSL1
1
The HMC8413LP2FE, HMC8413LP2FETR, and EV1HMC8413LP2F are RoHS compliant parts.
2
When ordering the evaluation board only, reference the model number, EV1HMC8413LP2F.
4
The lead finish of the HMC8413LP2FE and HMC8413LP2FETR is nickel palladium gold (NiPdAu).
©2021 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D23879-10/21(0)
Rev. 0 | Page 21 of 21
