Analog-Devices-Inc–Maxim-Integrated-MAX9982ETP-T
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19-2489; Rev 1; 9/02
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
General Description
Features
The MAX9982 fully integrated SiGe mixer is optimized to
meet the demanding requirements of GSM850, GSM900,
and CDMA850 base-station receivers. Each high-lineari-
ty device includes a local oscillator (LO) switch, LO dri-
ver, and active mixer. On-chip baluns are also integrated
to allow for single-ended RF and LO inputs. Since the
active mixer provides 2dB of conversion gain, the device
effectively replaces the IF amplifier stage, which typically
follows most passive mixer implementations.
ꢀ
+26.8dBm Input IP3
ꢀ
+13dBm Input 1dB Compression Point
ꢀ
825MHz to 915MHz RF Frequency Range
ꢀ
70MHz to 170MHz IF Frequency Range
ꢀ
725MHz to 1085MHz LO Frequency Range
ꢀ
2dB Conversion Gain
The MAX9982 provides exceptional linearity with an
input IP3 of greater than +26dBm. The integrated LO
driver allows for a wide range of LO drive levels from
-5dBm to +5dBm. In addition, the built-in switch
enables rapid LO selection of less than 250ns, as need-
ed for GSM frequency-hopping applications.
ꢀ
12dB Noise Figure
ꢀ
-5dBm to +5dBm LO Drive
ꢀ
5V Single-Supply Operation
ꢀ
Built-In LO Switch
ꢀ
ESD Protection
The MAX9982 is available in a 20-pin QFN package
(5mm
✕
5mm) with an exposed paddle and is specified
over the -40°C to +85°C extended temperature range.
ꢀ
Internal RF and LO Baluns for Single-Ended Inputs
Applications
Ordering Information
GSM850/GSM900 2G and 2.5G EDGE Base
Station Receivers
Cellular cdmaOne
TM
and cdma2000
TM
Base
Station Receivers
PART
TEMP RANGE
PIN-PACKAGE
MAX9982ETP -40
°
C to +85
°
C 20
QFN-EP* (5mm
5mm)
*EP = exposed paddle.
TDMA and Integrated Digital Enhanced
Network (iDEN)
TM
Base Station Receivers
Pin Configuration/
Functional Diagram
Digital and Spread-Spectrum Communication
Systems
Microwave Links
TOP VIEW
MAX9982
RF
TAP
1
2
3
4
5
15 LO2
14 GND
13 GND
12 GND
Typical Application Circuit appears at end of data sheet.
GND
cdmaOne is a trademark of CDMA Development Group.
cdma2000 is a trademark of Telecommunications Industry
Association.
RFBIAS
GND
11
LO1
iDEN is a trademark of Motorola, Inc.
QFN
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
ABSOLUTE MAXIMUM RATINGS
CC
IF+, IF-, RFBIAS, LOSEL………………………..-0.3V to (V
+ 0.3V)
V
………………………………………………………………-0.3V to +5.5V
Continuous Power Dissipation (T
= +70
°
C)
A
20-Pin QFN (derate 20.8mW/
°
C above T
= +70
°
C) ….1.66W
CC
A
TAP ………………………………………………………………………….+5.0V
RFBIAS Current……………………………………………………………5mA
RF, LO1, LO2 Input Power ………………………………………+20dBm
Operating Temperature Range ………………………-40
°
C to +85
°
C
Junction Temperatur
e
.
……………………………………………..+150
°
C
Storage Temperature Rang
e
.
……………………….-65
°
C to +150
°
C
Lead Temperature (soldering, 10s) ……………………………+300
°
C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, V
= 4.75V to 5.25V, no RF signals applied, all RF inputs and outputs terminated with 50
Ω
, T
=
CC
A
-40
°
C to +85
°
C, unless otherwise noted. Typical values are at V
= 5V, T
= +25
°
C, unless otherwise noted.)
A
CC
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
4.75
138
TYP
5.00
168
MAX
5.25
193
UNITS
V
V
CC
CC
Supply Current
I
mA
V
0.3V
+
CC
Input High Voltage
V
3.5
V
IH
Input Low Voltage
V
0.4
+5
V
IL
LOSEL Input Current
I
-5
µA
LOSEL
AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, V
= 4.75V to 5.25V, P
= -5dBm to +5dBm, f
= 825MHz to 915MHz, f
= 725MHz to 1085MHz,
LO RF
LO
CC
T
A
= -40
°
C to +85
°
C, unless otherwise noted. Typical values at V
= +5.0V, P
= -5dBm, P
= 0dBm, f
= 870MHz, f
=
CC
RF
LO
RF
LO
770MHz, T
= +25
°
C, unless otherwise noted.) (Notes 1, 2)
A
PARAMETER
RF Frequency
SYMBOL
CONDITIONS
MIN
825
725
TYP
MAX
915
UNITS
MHz
f
RF
LO
LO Frequency
IF Frequency
LO Drive Level
f
1085
MHz
Must meet RF and LO frequency range; IF
matching components affect IF frequency
range
f
70
-5
170
+5
MHz
dBm
IF
P
LO
Cellular band,
V
= +5.0V,
= 100MHz,
CC
f
= 825MHz to
2.6
2.1
RF
f
IF
850MHz
Conversion Gain (Note 3)
G
low-side injection,
dB
C
GSM band,
P
P
= 0dBm,
= -5dBm
RF
f
= 880MHz to
RF
LO
915MHz
Gain Variation Over Temperature
Gain Variation from Nominal
T
= -40
°
C to +85
°
C
-0.0135
0.6
dB/
°
C
A
f
= 825MHz to 915MHz, 3
dB
RF
2
_______________________________________________________________________________________
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
AC ELECTRICAL CHARACTERISTICS (continued)
(
Typical Application Circuit
, V
= 4.75V to 5.25V, P
= -5dBm to +5dBm, f
= 825MHz to 915MHz, f
= 725MHz to 1085MHz,
LO RF
LO
CC
T
A
= -40
°
C to +85
°
C, unless otherwise noted. Typical values at V
= +5.0V, P
= -5dBm, P
= 0dBm, f
= 870MHz, f
=
CC
RF
LO
RF
LO
770MHz, T
= +25
°
C, unless otherwise noted.) (Notes 1, 2)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Inject P
= -20dBm at f
+ 100MHz into
IN
LO
Conversion Loss from LO to IF
LO port; measure 100MHz at IF port as
; no RF signal at RF port
47
dB
P
OUT
Cellular band, f
= 825MHz to 850MHz
11.3
11.8
12.9
14.5
RF
Noise Figure
NF
dB
dBm
dBm
dB
GSM band, f
= 880MHz to 915MHz
RF
Low-side injection
High-side injection
Input 1dB Compression Point
Input Third-Order Intercept Point
P
1dB
V
= +5.0V, P
= 0dBm, P
= -5dBm,
RF LO
CC
IIP3
IIP3
26.8
0.5
65
T
A
= +25
°
C (Notes 3, 4)
Input Third-Order Intercept Point
Variation Over Temperature
T
A
= -40
°
C to +85
°
C
f
f
f
= 915,
= 815MHz,
RF
P
= +5dBm
= 0dBm
= +5dBm
= 0dBm
LO
LO
LO
LO
LO
2 RF – 2 LO Spur Rejection
3 RF – 3 LO Spur Rejection
2
2
3
dBc
dBc
= 865MHz,
= -5dBm
SPUR
P
P
P
57
P
RF
f
f
f
= 915,
= 815MHz,
RF
89
LO
3
= 848.3MHz,
= -5dBm
SPUR
89
P
RF
P
= -5dBm to +5dBm,
= 725MHz to 1085MHz
LO
Maximum LO Leakage at RF Port
Maximum LO Leakage at IF Port
Minimum RF to IF Isolation
LO1 to LO2 Isolation
-40
-28
11
dBm
dBm
dB
f
LO
P
= -5dBm to +5dBm,
LO
f
= 725MHz to 1085MHz
LO
P
= -5dBm to +5dBm,
LO
f
RF
= 825MHz to 915MHz
f
= 825MHz to 915MHz, P
= P
=
RF
LO1
LO2
51
dB
+5dBm, f
= 100MHz (Note 5)
IF
LO Switching Time
RF Return Loss
50% of LOSEL to IF settled within 2
°
250
19
20
12
15
ns
dB
LO port active
LO Return Loss
IF Return Loss
dB
dB
LO port inactive
RF and LO terminated (Note 6)
Note 1:
Guaranteed by design and characterization.
Note 2:
All limits reflect losses of external components. Output measurements taken at IF OUT of
Typical Application Circuit
.
Note 3:
Production tested.
Note 4:
Two tones at 1MHz spacing, 0dBm each at RF port.
Note 5:
Measured at IF port at IF frequency. LO1 and LO2 are offset by 1MHz.
Note 6:
IF return loss can be optimized by external matching components.
_______________________________________________________________________________________
3
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
T
y
pical Operating Characteristics
(
Typical Application Circuit
, V
= 5V, f
= 100MHz, P
= -5dBm, P
= 0dBm, T
= +25
°
C, unless otherwise noted.)
IF RF
LO A
CC
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
CONVERSION GAIN vs. RF FREQUENCY
HIGH-SIDE INJECTION
BIAS CURRENT vs. TEMPERATURE
180
175
170
165
160
155
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
f
IF
= 120MHz
f
IF
= 100MHz
T
= -40
°
C
A
V
= 5.25V
CC
T
= -40
°
C
= +25
°
C
A
T
= +25
°
C
A
T
A
V
= 5V
CC
T
= +85
°
C
A
V
= 4.75V
CC
T
= +85
°
C
A
-40
-15
10
35
60
85
820
840
860
880
900
920
820
840
860
880
900
920
TEMPERATURE (
°
C)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
CONVERSION GAIN vs. RF FREQUENCY
HIGH-SIDE INJECTION
3.0
2.8
2.6
2.4
2.2
2.0
1.8
3.0
2.8
2.6
2.4
2.2
2.0
1.8
2.6
2.4
2.2
2.0
1.8
1.6
f
= 100MHz
f
= 100MHz
IF
IF
f
IF
= 120MHz
V
CC
= 4.75V
V
= 5.25V
CC
P
= -5dBm, 0dBm, +5dBm
LO
V
= 5V
CC
P
= -5dBm, 0dBm, +5dBm
LO
820
840
860
880
900
920
820
840
860
880
900
920
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2 LO – 2 RF RESPONSE vs. RF FREQUENCY
HIGH-SIDE INJECTION
2 RF – 2 LO vs. RF FREQUENCY
LOW-SIDE INJECTION
2 RF – 2 LO RESPONSE vs. RF FREQUENCY
LOW-SIDE INJECTION
58
56
54
52
50
80
75
70
65
60
55
75
70
65
60
55
50
45
P
P
f
= -5dBm
= +5dBm
RF
LO
P
f
= -5dBm
P
= -5dBm
RF
RF
LO
= 100MHz
P
= +5dBm
IF
= 120MHz
P
= +5dBm
IF
LO
f
IF
= 100MHz
T
= +85
°
C
A
T
= -40
°
C
A
P
= 0dBm
LO
T
= +25
°
C
A
T
= +25
°
C
A
T
= -40
°
C
A
P
= -5dBm
LO
T
= +85
°
C
A
820
840
860
880
900
920
820
840
860
880
900
920
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
4
_______________________________________________________________________________________
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, V
= 5V, f
= 100MHz, P
= -5dBm, P
= 0dBm, T
= +25
°
C, unless otherwise noted.)
IF RF
LO A
CC
2 LO – 2 RF RESPONSE vs. RF FREQUENCY
HIGH-SIDE INJECTION
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
INPUT IP3 vs. RF FREQUENCY
HIGH-SIDE INJECTION
60.0
57.5
55.0
52.5
50.0
47.5
45.0
29
28
27
26
25
32
31
30
29
28
27
26
25
P
IF
= -5dBm
RF
f
= 100MHz
IF
f
= 120MHz
IF
f
= 120MHz
P
= 0dBm
LO
T
= +85
°
C
A
T
= -40
°
C
A
T
= +25
°
C
A
P
= +5dBm
LO
T
= +25
°
C
T
= -40
°
C
A
A
P
LO
= -5dBm
860
T
= +85
°
C
A
820
840
880
900
920
820
840
860
880
900
920
820
840
860
880
900
920
920
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
HIGH-SIDE INJECTION
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
30
29
28
27
26
25
28.0
27.5
27.0
26.5
26.0
28.0
27.5
27.0
26.5
f
= 100MHz
f
= 120MHz
IF
IF
f
= 100MHz
IF
P
= -5dBm
LO
V
= 5.25V
P
= 0dBm
CC
LO
P
= 0dBm
LO
P
= -5dBm
LO
P
= +5dBm
LO
P
= +5dBm
LO
V
= 5.0V
CC
V
= 4.75V
840
CC
820
840
860
880
900
920
820
860
880
900
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
INPUT P1dB vs. RF FREQUENCY
HIGH-SIDE INJECTION
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
14.0
13.5
13.0
12.5
12.0
16.0
15.5
15.0
14.5
14.0
13.5
13.0
13.50
13.25
13.00
12.75
12.50
f
IF
= 100MHz
f
= 120MHz
T
= +85
°
C
f
= 100MHz
IF
IF
A
T
= +85
°
C
A
P
= -5dBm
LO
T
= +25
°
C
A
T
= +25
°
C
A
T
= -40
°
C
T
= -40
°
C
A
A
P
= 0dBm
880
P
= +5dBm
840
LO
LO
820
840
860
880
900
920
820
840
860
880
900
920
820
860
900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
5
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, V
= 5V, f
= 100MHz, P
= -5dBm, P
= 0dBm, T
= +25
°
C, unless otherwise noted.)
CC
IF
RF
LO
A
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
LO SWITCH ISOLATION vs. RF FREQUENCY
HIGH-SIDE INJECTION
54
53
52
51
50
49
14.0
13.5
13.0
12.5
12.0
55
54
53
52
51
50
LO OFFSET 1MHz
LO OFFSET 1MHz
f
= 100MHz
IF
f
= 100MHz
f
= 120MHz
IF
IF
V
= 5.25V
CC
T
= +85
°
C
A
T
= +85
°
C
A
T
= +25
°
C
T
= +25
°
C
A
A
V
CC
= 5V
T
= -40
°
C
A
T
= -40
°
C
A
V
= 4.75V
880
CC
820
840
860
880
900
920
820
840
860
900
920
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
54
53
52
51
50
49
-30.0
-20
-30
-40
-50
-60
LO OFFSET 1MHz
f
IF
= 100MHz
-32.5
-35.0
-37.5
-40.0
-42.5
-45.0
P
= +5dBm
LO
T =
-40
°
C
A
P
= -5dBm
LO
P
LO
= 0dBm
1025
T
= +25
°
C
A
P
= 0dBm
900
LO
P
= -5dBm
825
LO
P
= +5dBm
LO
T
= +85
°
C
A
820
840
860
880
920
725
825
925
1025
1125
725
925
1125
RF FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF LEAKAGE AT IF PORT
vs. RF FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
RF LEAKAGE AT IF PORT
vs. RF FREQUENCY
-10
-12
-14
-16
-18
-20
-38
-40
-42
-44
-46
-48
-10
-12
-14
-16
-18
-20
-22
T
= -40
°
C
A
P
= +5dBm
LO
P
LO
= -5dBm, 0dBm, +5dBm
P
LO
= 0dBm
P
= -5dBm
LO
T
= +25
°
C
A
T
= +85
°
C
A
820
840
860
880
900
920
700
800
900
1000
1100
820
840
860
880
900
920
RF FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF FREQUENCY (MHz)
6
_______________________________________________________________________________________
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, V
= 5V, f
= 100MHz, P
= -5dBm, P
= 0dBm, T
= +25
°
C, unless otherwise noted.)
CC
IF
RF
LO
A
NOISE FIGURE vs. RF FREQUENCY
HIGH-SIDE INJECTION
RF RETURN LOSS
vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
LOW-SIDE INJECTION
14
13
12
11
10
9
16
15
14
13
12
11
0
5
SINGLE SIDEBAND
SINGLE SIDEBAND
T
= +85
°
C
A
T
= +85
°
C
A
T
= +25
°
C
A
10
15
20
25
30
P
LO
= -5dBm, 0dBm, +5dBm
T
= -40
°
C
A
T
= +25
°
C
A
T
= -40
°
C
A
820
840
860
880
900
920
820
840
860
880
900
920
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
IF RETURN LOSS
vs. IF FREQUENCY
LO RETURN LOSS
vs. LO FREQUENCY
0
0
5
MEASURED ON LO1 PORT
LOSEL IS LOGIC HIGH (LO1 INPUT SELECTED)
IF MATCH IS TUNED FOR 70MHz. MATCHING
FOR HIGHER FREQUENCIES IS POSSIBLE.
5
10
15
20
25
30
10
15
20
25
30
P
= -5dBm
LO
P
= +5dBm
LO
P
= 0dBm
LO
700
800
900
1000
1100
70
90
110
130
150
170
LO FREQUENCY (MHz)
IF FREQUENCY (MHz)
_______________________________________________________________________________________
7
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
Pin Description
PIN
1
NAME
RF
FUNCTION
RF Input. This input is internally matched to 50
and is DC shorted to ground.
RF Balun Center Tap. Connect bypass capacitors from this pin to ground.
2
TAP
3, 5, 7, 9, 12,
13, 14, 16, 17,
20, EP
GND
Ground
Bias control for the mixer. Connect a 249
resistor from this pin to ground to set the bias
current for the mixer.
4
6, 10
8
RFBIAS
V
Power-Supply Connections. Connect a 0.1µF bypass capacitor from each V
pin to ground.
CC
CC
Local Oscillator Select. Set this pin to logic HIGH to select LO1; set to logic LOW to select
LO2.
LOSEL
LO1
Local Oscillator Input 1. This input is internally matched to 50
and is DC shorted to ground
when selected. Requires a DC-blocking capacitor.
11
15
Local Oscillator Input 2. This input is internally matched to 50
and is DC shorted to ground
when selected.
LO2
Differential IF Output. Connect 560nH pullup inductors and 137
pullup resistors from each
18, 19
IF-, IF+
of these pins to V
for a 70MHz to 120MHz IF range.
CC
Table 1. Component List
COMPONENT
C1, C2, C6, C7
C3
VALUE
33pF
SIZE
PART
Murata GRM1885C1H330J
0603
0.033µF
0.1µF
0603
Murata GRM188R71E333K
Murata GRM188FS1E104Z
Murata GRM1885C1H221J
Murata GRM1885C1H331J
Coilcraft 1008CS-561XJBB
Panasonic ERJ-3EKF2490V
Panasonic ERJ-3EKF1370V
Mini-Circuits TC4-1W-7A
MAX9982ETP
C4, C5
C8, C11
C9, C10
L1, L2
0603
220pF
330pF
560nH
0603
0603
1008
R1
249
137
1%
1%
0603
R3, R4
T1
0603
4:1 (200:50)
—
20-pin 5mm x 5mm QFN
U1
—
RF Inputs
Detailed Description
The MAX9982 has one input (RF) that is internally
matched to 50
Ω
requiring no external matching compo-
nents. A 33pF DC-blocking capacitor is required at the
input since the input is internally DC shorted to ground
through a balun. The input frequency range is 825MHz
to 915MHz.
The MAX9982 downconverter mixer is designed for
GSM and CDMA base station receivers with an RF fre-
quency between 825MHz and 915MHz. It implements
an active mixer that provides 2dB of overall conversion
gain to the receive path, removing the need for an addi-
tional IF amplifier. The mixer has excellent input IP3
measuring +26.8dBm. The device also features inte-
grated RF and LO baluns that allow the mixers to be
driven with single-ended signals.
LO Inputs
The mixer can be used for either high-side or low-side
injection applications with an LO frequency range of
8
_______________________________________________________________________________________
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
725MHz to 1085MHz. An internal LO switch allows for
Bias Circuitry
Connect a bias resistor from RFBIAS to ground to set the
mixer bias current. A nominal resistor value of 249
Ω
sets
an input IP3 of +26.8dBm and supply current of 168mA.
switching between two single-ended LO ports; this is
useful for fast frequency changes/frequency hopping.
LO switching time is typically less than 250ns. The
switch is controlled by a digital input (LOSEL) that
when high, selects LO1 and when low, selects LO2.
Applications Information
Layout Considerations
A properly designed PC board is an essential part of
any RF/microwave circuit. Keep RF signal lines as short
as possible to reduce losses, radiation, and induc-
tance. For best performance, route the ground pin
traces directly to the exposed paddle underneath the
package. Solder the exposed pad on the bottom of the
device package evenly to the board ground plane to
provide a heat transfer path along with RF grounding. If
the PC board ground plane is not immediately available
on the top metal layer, provide multiple vias between
the exposed paddle connection and the PC board
ground plane.
Internal LO buffers allow for a wide power range on the
LO ports. The LO signal power can vary from -5dBm to
+5dBm. LO1 and LO2 are internally matched to 50
Ω
,
so only a 33pF DC-blocking capacitor is required at
each LO port.
IF Outputs
This mixer has an IF frequency range of 70MHz to
170MHz. The differential IF output ports require external
pullup inductors to V
to resonate out the differential
CC
on-chip capacitance of 1.8pF. See the
Typical Appli-
cation Circuit
for recommended component values for an
IF optimized for 70MHz to 100MHz. Higher IF frequen-
cies can be optimized by reducing the values of L1 and
L2.
Power-Supply Bypassing
Proper voltage supply bypassing is essential for high-
Removing the ground plane from underneath L1 and L2
reduces parasitic capacitive loading and improves
VSWR.
frequency circuit stability. Bypass each V
pin with a
CC
0.1µF capacitor. Bypass TAP by placing a 33pF (C2) to
ground within 100 mils of the TAP pin.
Chip Information
TRANSISTOR COUNT: 179
PROCESS: BiCMOS
_______________________________________________________________________________________
9
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
T
y
pical Application Circuit
C9
T1
3
2
1
6
L1
L2
R3
IF OUT
5V
4:1 (200:50)
TRANSFORMER
C8
C11
R4
4
C10
C1
MAX9982
RF
TAP
LO2
RFIN
C3
LO2
1
2
3
4
5
15
14
13
12
11
GND
GND
GND
LO1
C7
C2
GND
RFBIAS
GND
R1
LO1
C6
5V
5V
C4
C5
LO SELECT
10 ______________________________________________________________________________________
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
D2
0.15
C A
D
b
0.10 M
C A B
C
L
D2/2
D/2
k
PIN # 1
I.D.
0.15
C
B
PIN # 1 I.D.
0.35×45
E/2
E2/2
C
(NE-1) X
e
L
E2
E
k
L
DETAIL A
e
(ND-1) X
e
C
C
L
L
L
L
e
e
0.10
C
A
0.08
C
C
A3
A1
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE
16, 20, 28, 32L, QFN THIN, 5x5x0.8 mm
APPROVAL
DOCUMENT CONTROL NO.
REV.
1
21-0140
C
2
______________________________________________________________________________________ 11
825MHz to 915MHz, SiGe High-Linearity
Active Mixer
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
COMMON DIMENSIONS
EXPOSED PAD VARIATIONS
NOTES:
1. DIMENSIONING
& TOLERANCING CONFORM TO ASME Y14.5M-1994.
2. ALL
DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES.
3. N
IS THE TOTAL NUMBER OF TERMINALS.
4. THE
TERMINAL #1 IDENTIFIER AND TERMINAL NUMBERING CONVENTION SHALL CONFORM TO JESD 95-1
SPP-012. DETAILS
OF TERMINAL #1 IDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE
ZONE INDICATED. THE TERMINAL #1 IDENTIFIER MAY BE EITHER A MOLD OR MARKED FEATURE.
5. DIMENSION
b APPLIES TO METALLIZED TERMINAL AND IS MEASURED BETWEEN 0.25 mm AND 0.30 mm
FROM TERMINAL TIP.
6. ND
AND NE REFER TO THE NUMBER OF TERMINALS ON EACH D AND E SIDE RESPECTIVELY.
7. DEPOPULATION
IS POSSIBLE IN A SYMMETRICAL FASHION.
8. COPLANARITY
APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THE TERMINALS.
9. DRAWING
CONFORMS TO JEDEC MO220.
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE
10. WARPAGE
SHALL NOT EXCEED 0.10 mm.
16, 20, 28, 32L, QFN THIN, 5x5x0.8 mm
APPROVAL
DOCUMENT CONTROL NO.
REV.
2
21-0140
C
2
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12
____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA
94086 408-737-7600
© 2002
Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
