Analog-Devices-MAX2031ETP-T
| Part # | Analog-Devices-MAX2031ETP-T |
Download  | Analog-Devices-MAX2031ETP-T |
19-0248; Rev 1; 6/09
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
General Description
Features
♦
650MHz to 1000MHz RF Frequency Range
The MAX2031 high-linearity passive upconverter or
downconverter mixer is designed to provide +36dBm
IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to
1000MHz RF frequency range to support GSM/cellular
base-station transmitter or receiver applications. With a
650MHz to 1250MHz LO frequency range, this particu-
lar mixer is ideal for high-side LO injection architec-
tures. For a pin-to-pin-compatible mixer meant for
low-side LO injection, refer to the MAX2029.
♦
650MHz to 1250MHz LO Frequency Range
♦
570MHz to 900MHz LO Frequency Range
(Refer to the MAX2029 Data Sheet)
♦
DC to 250MHz IF Frequency Range
♦
7dB Conversion Loss
♦
+36dBm Input IP3
♦
+27dBm Input 1dB Compression Point
♦
7dB Noise Figure
In addition to offering excellent linearity and noise per-
formance, the MAX2031 also yields a high level of com-
ponent integration. This device includes a double-
balanced passive mixer core, a dual-input LO selec-
table switch, and an LO buffer. On-chip baluns are also
integrated to allow for a single-ended RF input for
downconversion (or RF output for upconversion), and
single-ended LO inputs. The MAX2031 requires a nomi-
nal LO drive of 0dBm, and supply current is guaranteed
to be below 100mA.
♦
Integrated LO Buffer
♦
Integrated RF and LO Baluns
♦
Low -3dBm to +3dBm LO Drive
♦
Built-In SPDT LO Switch with 49dB LO1 to LO2
Isolation and 50ns Switching Time
♦
Pin Compatible with the MAX2039/MAX2041
1700MHz to 2200MHz Mixers
♦
External Current-Setting Resistor Provides Option
for Operating Mixer in Reduced-Power/Reduced-
Performance Mode
The MAX2031 is pin compatible with the MAX2039/
MAX2041 1700MHz to 2200MHz mixers, making this
family of passive upconverters and downconverters
ideal for applications where a common PC board layout
is used for both frequency bands.
Ordering Information
PART
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP*
The MAX2031 is available in a compact 20-pin thin
QFN package (5mm x 5mm) with an exposed pad.
Electrical performance is guaranteed over the extended
-40°C to +85°C temperature range.
MAX2031ETP+
MAX2031ETP+T
+
Denotes a lead(Pb)-free/RoHS-compliant package.
T= Tape and reel.
*
EP = Exposed pad.
Applications
WCDMA/LTE and
cdma2000
®
Base
Stations
GSM 850/GSM 900 2G
and 2.5G EDGE Base
Stations
Predistortion Receivers
Pin Configuration/
Functional Diagram
Microwave and Fixed
Broadband Wireless
Access
Wireless Local Loop
TOP VIEW
20
19
18
17
16
Digital and Spread-
Spectrum
Communication Systems
+
Integrated Digital
Enhanced Network
V
1
15 LO2
CC
(iDEN
®
) Base Stations
V
CC
2
3
4
5
14
RF
MAX2031
WiMAX™ Base Stations
and Customer Premise
Equipment
13 GND
12 GND
11 LO1
TAP
GND
E.P.
6
GND
7
8
9
10
cdma200
0
i
s a registered trademark of Telecommunications
Industry Association.
iDE
N
i
s a registered trademark of Motorola, Inc.
WiMAX is a trademark of WiMAX Forum.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
V
CC
to GN
D
.
………………………………………………….-0.3V to +5.5V
Continuous Power Dissipation (Note 2)………………………………5W
θ
j (Notes
3, 4)………………………………………………………+38°C/W
C
RF (RF is DC shorted to GND through a balun)………………50mA
LO1, LO2 to GN
D
.
………………………………………….-0.3V to +0.3V
IF+, IF- to GN
D
.
……………………………………-0.3V to (V
A
θ
j (Notes
2, 3) ……………………………………………………..+13°C/W
+ 0.3V)
Operating Temperature Range (Note 5
)
.
….T
= -40°C to +85°C
CC
C
TAP to GN
D
.
………………………………………………….-0.3V to +1.4V
Junction Temperatur
e
.
……………………………………………..+150°C
Storage Temperature Rang
e
.
……………………….-65°C to +150°C
Lead Temperature (soldering, 10s) ……………………………+300°C
LOSEL to GND …………………………………….-0.3V to (V
LOBIAS to GND……………………………………-0.3V to (V
+ 0.3V)
+ 0.3V)
CC
CC
RF, LO1, LO2 Input Power (Note 1) ………………………….+20dBm
Note 1:
Maximum, reliable, continuous input power applied to the RF and IF port of this device is +12dBm from a 50
Ω
source.
x I
). This formula can be used when the temperature of the exposed
MAX2031
Note 2:
Based on junction temperature T
= T
+ (
θ
x V
J
C
JC
CC
CC
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial
.
Note 4:
Junction temperature T
= T
+ (
θ
x V
x I
). This formula can be used when the ambient temperature of the PCB is
CC
known. The junction temperature must not exceed +150°C.
J
A
JA
CC
Note 5:
T is
the temperature on the exposed pad of the package. T
is the ambient temperature of the device and PCB.
C
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, V
= 4.75V to 5.25V, no RF signals applied, T
= -40°C to +85°C. IF+ and IF- are DC grounded through an
CC
C
IF balun. Typical values are at V
= 5V, T
= +25°C, unless otherwise noted.)
CC
C
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
5.00
85
MAX
5.25
100
0.8
UNITS
V
4.75
V
mA
V
CC
CC
Supply Current
I
LOSEL Input-Logic Low
LOSEL Input-Logic High
V
IL
V
2
V
IH
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Components tuned for the 700MHz band
(Table 1), C1 = 7pF, C5 = 3.3pF (Notes 6, 7)
650
850
RF Frequency
f
MHz
RF
LO
Components tuned for the 800MHz/900MHz
cellular band (Table 1), C1 = 82pF,
C5 = 2.0pF (Note 6)
800
1000
LO Frequency
IF Frequency
LO Drive Level
f
(Notes 6, 7)
650
0
1250
250
+3
MHz
MHz
dBm
IF frequency range depends on external IF
transformer selection
f
IF
P
(Note 6)
-3
LO
2
_______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
AC ELECTRICAL CHARACTERISTICS (800MHz/900MHz CELLULAR BAND DOWNCON-
VERTER OPERATION)
(
Typical Application Circuit,
optimized for the
800MHz/900MHz cellular band (see Table 1)
, C1 = 82pF, C5 = 2pF, L1 and C4 not
used, V
= 4.75V to 5.25V, RF and LO ports driven from 50
Ω
sources, P
= -3dBm to +3dBm, P
= 0dBm, f
= 815MHz to
CC
LO RF
RF
1000MHz, f
= 960MHz to 1180MHz, f
= 160MHz, f
> f
, T
= -40°C to +85°C, unless otherwise noted. Typical values are at
LO
IF
LO
RF
C
V
CC
= 5V, P
= 0dBm, P
= 0dBm, f
= 910MHz, f
= 1070MHz, f
= 160MHz, T
= +25°C, unless otherwise noted.) (Note 8)
RF
LO
RF
LO
IF
C
PARAMETER
SYMBOL
Lc
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Loss
7.0
dB
Flatness over any one of three frequency
bands (f
= 160MHz):
IF
Conversion Loss Flatness
f
f
f
= 827MHz to 849MHz
= 869MHz to 894MHz
= 880MHz to 915MHz
0.18
dB
RF
RF
RF
T
T
= +25°C to -40°C
= +25°C to +85°C
-0.3
0.2
27
C
C
Conversion Loss Variation Over
Temperature
dB
Input Compression Point
P
(Note 9)
= 910MHz, f
dBm
1dB
f
= 911MHz,
RF2
RF1
P
P
= 0dBm/tone, f
= 1070MHz,
LO
Input Third-Order Intercept Point
IIP3
32
36
dBm
dB
RF
LO
= 0dBm, T
= +25°C (Note 10)
C
T
C
T
C
= +25°C to -40°C
= +25°C to +85°C
0.3
-0.3
72
Input IP3 Variation Over
Temperature
IIP3
2 x 2
3 x 3
NF
2LO – 2RF
Spurious Response at IF
Noise Figure
dBc
dB
3LO – 3RF
79
Single sideband
7.0
15
P
P
= +8dBm
BLOCKER
BLOCKER
Noise Figure Under Blocking
(Note 11)
dB
= +12dBm
19
LO2 selected, P
= +3dBm, T
= +25°C
42
42
51
LO
C
LO1-to-LO2 Isolation (Note 10)
dB
LO1 selected, P
= +3dBm, T
= +25°C
49
LO
C
Maximum LO Leakage at RF Port
Maximum LO Leakage at IF Port
LO Switching Time
P
P
= +3dBm
= +3dBm
-27
-35
50
dBm
dBm
ns
LO
LO
50% of LOSEL to IF, settled within 2 degrees
Minimum RF-to-IF Isolation
RF Port Return Loss
45
dB
17
dB
LO1/LO2 port selected, LO2/LO1, RF, and IF
terminated into 50
Ω
28
LO Port Return Loss
IF Port Return Loss
dB
dB
LO1/LO2 port unselected, LO2/LO1, RF, and
IF terminated into 50
Ω
30
17
LO driven at 0dBm, RF terminated into 50
Ω
_______________________________________________________________________________________
3
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
AC ELECTRICAL CHARACTERISTICS (700MHz BAND DOWNCONVERTER OPERATION)
(
Typical Application Circuit
, optimized for the
700MHz band (see Table 1)
, C1 = 7pF, C5 = 3.3pF, L1 and C4 are not used, V
=
=
CC
4.75V to 5.25V, RF and LO ports driven from 50
Ω
sources, P
= -3dBm to +3dBm, P
= 0dBm, f
= 650MHz to 850MHz, f
LO
RF
RF
LO
790MHz to 990MHz, f
= 140MHz, f
> f
, T
= +25°C, unless otherwise noted. Typical values are at V
= 5V, P
= 0dBm,
CC RF
IF
LO
RF
C
P
LO
= 0dBm, f
= 750MHz, f
= 890MHz, f
= 140MHz, T
= +25°C, unless otherwise noted.) (Notes 8, 10)
RF LO IF
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
dB
Conversion Loss
L
6.1
6.9
8.1
C
Input 1dB Compression Point
P
f
= 750MHz, P
= 0dBm, P
= 0dBm
27.7
dBm
1dB
RF
RF
LO
MAX2031
f
f
= 749MHz, f
= 750MHz,
RF1
RF2
Input Third-Order Intercept Point
IIP3
= 890MHz, P
= 0dBm/tone,
32
37
dBm
LO
RF
P
= 0dBm
LO
LO Leakage at IF Port
LO Leakage at RF Port
RF-to-IF Isolation
P
P
= +3dBm
= +3dBm
-33
-20
49
-21
-13
dBm
dBm
dB
LO
LO
36
40
65
2LO-2RF Spurious Response
3LO-3RF Spurious Response
2 x 2
3 x 3
72
dBc
dBc
82
AC ELECTRICAL CHARACTERISTICS (UPCONVERTER OPERATION)
(
Typical Application Circuit
, L1 = 4.7nH, C4 = 6pF, C1 = 82pF, C5 not used, V
= 4.75V to 5.25V, RF and LO ports are driven from
CC
50
Ω
sources, P
= -3dBm to +3dBm, P
= 0dBm, f
= 815MHz to 1000MHz, f
= 960MHz to 1180MHz, f
= 160MHz, f
> f
,
LO
IF
RF
LO
IF
LO
RF
=
LO
T
= -40°C to +85°C, unless otherwise noted. Typical values are at V
= 5V, P
= 0dBm, P
= 0dBm, f
= 910MHz, f
IF
C
CC
LO
RF
1070MHz, f
= 160MHz, T
= +25°C, unless otherwise noted.) (Note 8)
IF
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Loss
Lc
7.4
dB
Flatness over any one of three frequency
bands (f
= 160MHz):
IF
Conversion Loss Flatness
f
RF
f
RF
f
RF
= 827MHz to 849MHz
= 869MHz to 894MHz
= 880MHz to 915MHz
0.3
dB
T
T
= +25°C to -40°C
= +25°C to +85°C
-0.3
0.4
27
C
C
Conversion Loss Variation Over
Temperature
dB
Input Compression Point
P
(Note 9)
dBm
1dB
f
= 160MHz, f
= 161MHz,
IF2
IF1
P
P
= 0dBm/tone, f
= 1070MHz,
LO
Input Third-Order Intercept Point
IIP3
IIP3
32
36
dBm
IF
= 0dBm, T
= +25°C (Note 10)
LO
C
T
C
T
C
= +25°C to -40°C
= +25°C to +85°C
1.2
-0.9
64
Input IP3 Variation Over
Temperature
dB
LO 2IF
Spur
dBc
dBc
LO 3IF
Spur
83
Output Noise Floor
P
= 0dBm (Note 11)
-167
dBm/Hz
OUT
Note 6:
Operation outside this range is possible, but with degraded performance of some parameters.
Note 7:
Not production tested.
Note 8:
All limits include external component losses. Output measurements are taken at IF or RF port of the
Typical Application Circuit
.
Note 9:
Compression point characterized. It is advisable not to continuously operate the mixer RF/IF inputs above +12dBm.
Note 10:
Guaranteed by design.
Note 11:
Measured with external LO source noise filtered, so its noise floor is -174dBm/Hz. This specification reflects the effects of all
SNR degradations in the mixer, including the LO noise as defined in Application Note 2021:
Specifications and Measurements
of Local Oscilator Noise in Integrated Circuit Base Station Mixers.
4
_______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
T
y
pical Operating Characteristics
(
Typical Application Circuit
, optimized for the
800MHz/900MHz cellular band (see Table 1)
, C1 = 82pF, C5 = 2pF, L1 and C4 not used,
V
CC
= 5.0V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 160MHz, T
= +25°C, unless otherwise noted.)
C
LO RF
LO IF
RF
Downconverter Curves
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
10
10
10
9
9
8
7
6
5
9
T
C
= +25
°
C
T =
-25
°
C
C
T
C
= +85
°
C
P
LO
= -3dBm, 0dBm, +3dBm
V =
4.75V, 5.0V, 5.25V
CC
8
7
6
5
8
7
6
T
C
= -40
°
C
5
800
850
900
950
1000
800
850
900
950
1000
800
850
900
950
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
40
38
36
34
32
30
28
26
40
38
36
34
32
30
28
26
40
P
RF
= 0dBm/TONE
P
RF
= 0dBm/TONE
P
= 0dBm/TONE
RF
T
C
= +85
°
C, +25
°
C
P
= 0dBm
LO
P
LO
= +3dBm
V
CC
= 5.25V
38
36
34
32
30
28
26
P
LO
= -3dBm
V
CC
= 5.0V
T
C
= -40
°
C
V
CC
= 4.75V
T
C
= -25
°
C
800
850
900
950
1000
800
850
900
950
1000
800
850
900
950
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
10
10
10
9
8
7
6
5
9
8
7
6
5
9
8
7
6
5
T
= +25
°
C
T
= +85
°
C
C
C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= -40
°
C
C
T
C
= -25
°
C
800
850
900
950
1000
800
850
900
950
1000
800
850
900
950
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
5
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the
800MHz/900MHz cellular band (see Table 1)
, C1 = 82pF, C5 = 2pF, L1 and C4 not used,
V
CC
= 5.0V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 160MHz, T
= +25°C, unless otherwise noted.)
C
LO RF
LO IF
R
F
Downconverter Curves
2LO – 2RF RESPONSE
2LO – 2RF RESPONSE
vs. RF FREQUENCY
2LO – 2RF RESPONSE
vs. RF FREQUENCY
vs. RF FREQUENCY
95
95
85
75
65
55
45
95
85
75
65
55
45
P
= 0dBm
P
RF
= 0dBm
P
= 0dBm
RF
RF
V
= 4.75V, 5.0V
CC
T
= +25
°
C
P
LO
= 0dBm
C
P
LO
= -3dBm
MAX2031
85
75
65
55
45
T
C
= +85
°
C
= -40
°
C
P
LO
= +3dBm
V
= 5.25V
CC
T
C
= -25
°
C
T
C
800
850
900
950
1000
800
850
900
950
1000
800
850
900
950
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3LO – 3RF RESPONSE
vs. RF FREQUENCY
3LO – 3RF RESPONSE
vs. RF FREQUENCY
3LO – 3RF RESPONSE
vs. RF FREQUENCY
100
90
100
90
80
70
60
100
90
80
70
60
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
T
C
= +25
°
C
P
LO
= 0dBm
V
CC
= 5.25V
T
= +85
°
C
C
80
V
CC
= 5.0V
P
= -3dBm
P
LO
70
V
= 4.75V
950
CC
T
= -40
°
C, -25
°
C
C
= +3dBm
950
LO
60
800
850
900
950
1000
800
850
900
1000
800
850
900
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
1dB
1dB
1dB
32
30
28
26
24
32
30
28
26
24
32
30
28
26
24
T
= -40
°
C
V
= 5.25V
C
CC
P
= 0dBm, +3dBm
LO
T
= -25
°
C, +85
°
C
P
LO
= -3dBm
C
V
= 4.75V
CC
T
= +25
°
C
C
V
= 5.0V
950
CC
800
850
900
950
1000
800
850
900
950
1000
800
850
900
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
6
_______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the
800MHz/900MHz cellular band (see Table 1)
, C1 = 82pF, C5 = 2pF, L1 and C4 not used,
V
CC
= 5.0V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 160MHz, T
= +25°C, unless otherwise noted.)
C
LO RF
LO IF
R
F
Downconverter Curves
LO SWITCH ISOLATION
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
vs. LO FREQUENCY
60
60
55
50
45
40
60
55
50
45
40
55
50
T
= -40
°
C, -25
°
C
C
P
LO
= -3dBm, 0dBm, +3dBm
T
C
= +85
°
C
V
= 4.75V, 5.0V, 5.25V
CC
45
40
T
= +25
°
C
C
850
950
1050
1150
1250
850
950
1050
1150
1250
850
950
1050
1150
1250
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
-20
-30
-40
-50
-60
-20
-30
-40
-50
-60
T
= -40
°
C, -25
°
C
V
= 5.25V
= 4.75V
C
CC
T
= +25
°
C
C
P
LO
= -3dBm, 0dBm, +3dBm
V
CC
T
= +85
°
C
C
V
= 5.0V
1110
CC
-60
960
1010
1060
1110
1160
960
1010
1060
1110
1160
960
1010
1060
1160
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-15
-20
-25
-30
-35
-40
-45
-15
-20
-25
-30
-35
-40
-45
-15
-20
-25
-30
-35
-40
-45
T
C
= -40
°
C, -25
°
C
V
= 5.25V
= 4.75V
CC
P
LO
= -3dBm, 0dBm, +3dBm
T
= +85
°
C
C
V
CC
T
C
= +25
°
C
V
CC
= 5.0V
850
950
1050
1150
1250
850
950
1050
1150
1250
850
950
1050
1150
1250
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
_______________________________________________________________________________________
7
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the
800MHz/900MHz cellular band (see Table 1)
, C1 = 82pF, C5 = 2pF, L1 and C4 not used,
V
CC
= 5.0V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 160MHz, T
= +25°C, unless otherwise noted.)
C
LO RF
LO IF
R
F
Downconverter Curves
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
60
55
50
45
40
35
30
60
55
50
45
40
35
30
60
55
MAX2031
T
= +25
°
C
T
= +85
°
C
P
= +3dBm
= -3dBm
C
C
LO
LO
50
45
40
35
30
V
= 4.75V, 5.0V, 5.25V
CC
P
T
C
= -40
°
C, -25
°
C
P
= 0dBm
LO
800
850
900
950
1000
800
850
900
950
1000
800
850
900
950
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
IF PORT RETURN LOSS
vs. IF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
RF PORT RETURN LOSS
vs. RF FREQUENCY
0
0
0
5
INCLUDES IF TRANSFORMER
INCLUDES IF TRANSFORMER
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
35
40
45
50
10
15
20
25
30
P =
-3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
750
800
850
900
950 1000 1050
0
100
200
300
400
500
0
100
200
300
400
500
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs.TEMPERATURE (T
)
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
C
100
90
80
70
60
0
5
0
10
20
30
40
50
60
V
= 5.25V
CC
10
15
20
25
30
35
40
P
= -3dBm, 0dBm, +3dBm
LO
P
= +3dBm
LO
P
LO
= 0dBm
V
CC
= 5.0V
V
= 4.75V
CC
P
= -3dBm
LO
-40
-15
10
35
60
85
800
900
1000
LO FREQUENCY (MHz)
1100
1200
1300
800
900
1000
1100
1200
1300
TEMPERATURE (
°
C)
LO FREQUENCY (MHz)
8
_______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit,
optimized for the
700MHz band (see Table 1)
, C1 = 7pF, C5 = 3.3pF, L1 and C4 are not used, V
=
CC
5V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 140MHz, T
= +25°C, unless otherwise noted.)
LO
RF
LO
RF IF
C
Downconverter Curves
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
9
8
7
6
5
9
9
8
7
6
5
T
C
= +85°C
8
7
V
= 4.75V, 5.0V, 5.25V
P
= -3dBm, 0dBm, +3dBm
CC
LO
T
C
= +25°C
6
5
T
C
= -40°C
700
650
750
800
850
650
700
750
800
850
650
700
750
800
850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
40
38
36
34
32
30
40
38
36
34
32
30
40
38
36
34
32
30
P
= 0dBm/TONE
P
= 0dBm/TONE
P
= 0dBm/TONE
RF
RF
RF
V
= 5.25V
CC
T
C
= +25°C
T
C
= +25°C
V
= 5.0V
CC
T
= +85°C
C
P
LO
= -3dBm, 0dBm, +3dBm
V
= 4.75V
CC
T
C
= -40°C
700
650
750
800
850
650
700
750
800
850
650
700
750
800
850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2LO-2RF RESPONSE
vs. RF FREQUENCY
2LO-2RF RESPONSE
vs. RF FREQUENCY
2LO-2RF RESPONSE
vs. RF FREQUENCY
85
85
75
65
55
45
85
75
65
55
45
P
= 0dBm
P
RF
= 0dBm
P
RF
= 0dBm
= +85°C
RF
75
65
55
45
P
= +3dBm
LO
T
C
P
= 0dBm
T
= +25°C
LO
C
P
LO
= -3dBm
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= -40°C
800
650
700
750
800
850
650
700
750
800
850
650
700
750
850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
9
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit,
optimized for the
700MHz band (see Table 1)
, C1 = 7pF, C5 = 3.3pF, L1 and C4 are not used, V
=
CC
5V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 140MHz, T
= +25°C, unless otherwise noted.)
LO
RF
LO
RF IF
C
Downconverter Curves
3LO-3RF RESPONSE
vs. RF FREQUENCY
3LO-3RF RESPONSE
3LO-3RF RESPONSE
vs. RF FREQUENCY
vs. RF FREQUENCY
90
90
90
80
70
60
T
C
= +25°C
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
V
CC
= 5.25V
MAX2031
80
70
60
80
70
60
T
= +85°C
C
V
= 5.0V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= -40°C
V
CC
= 4.75V
650
700
750
800
850
650
700
750
800
850
650
700
750
800
850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
1dB
1dB
1dB
30
29
28
27
26
25
30
29
28
27
26
25
30
29
28
27
26
25
V
= 5.25V
CC
P
= +3dBm
LO
V
CC
= 5.0V
T
= +25°C
C
T
= +85°C
P
LO
= 0dBm
C
V
= 4.75V
750
CC
T
C
= -40°C
P
LO
= -3dBm
700
650
700
750
800
850
650
750
800
850
650
700
800
850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-15
-25
-35
-45
-15
-25
-35
-45
-15
-25
-35
-45
T
= -40°C
C
V
= 5.25V
CC
P
= +3dBm
LO
T
C
= +25°C
840
V
= 5.0V
940
CC
P
LO
= -3dBm
940
P
= 0dBm
V
CC
= 4.75V
LO
T
C
= +85°C
790
890
940
990
790
840
890
990
790
840
890
990
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
10 ______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit,
optimized for the
700MHz band (see Table 1)
, C1 = 7pF, C5 = 3.3pF, L1 and C4 are not used, V
=
CC
5V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 140MHz, T
= +25°C, unless otherwise noted.)
Down
C
converter Curves
LO LEAKAGE AT RF PORT
vs. LO
FREQUENCY
LO
RF
LO
RF IF
LO LEAKAGE AT RF PORT
vs. LO
FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-10
-10
-15
-20
-25
-30
V
= 5.25V
CC
T
= -40°C
C
P
= +3dBm
LO
-15
-20
-25
-30
-15
-20
-25
-30
V
= 5.0V
CC
P
LO
= -3dBm
V
= 4.75V
CC
T
C
= +85°C
940
T
C
= +25°C
P
= 0dBm
LO
790
840
890
990
790
840
890
940
990
790
840
890
940
990
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
V
= 5.0V
CC
P
LO
= +3dBm
V
CC
= 5.25V
T
C
= -40°C
V
CC
= 4.75V
P
LO
= 0dBm
T
= +25°C
C
T
= +85°C
890
C
P
= -3dBm
890
LO
790
840
940
990
790
840
940
990
790
840
890
940
990
LO FREQENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
50
40
30
60
50
40
30
60
50
40
30
T
C
= +85°C
V
= 4.75V, 5.0V, 5.25V
CC
P
LO
= -3dBm, 0dBm, +3dBm
T
= +25°C
C
T
C
= -40°C
650
700
750
800
850
650
700
750
800
850
650
700
750
800
850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________
11
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit,
optimized for the
700MHz band (see Table 1)
, C1 = 7pF, C5 = 3.3pF, L1 and C4 are not used, V
=
CC
5V, P
= 0dBm, P
= 0dBm, f
> f
, f
= 140MHz, T
= +25°C, unless otherwise noted.)
Dow
n
C
converter Curves
LO
RF
LO
RF IF
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
vs. IF FREQUENCY
0
5
0
0
10
20
30
40
f
= 890MHz
LO
5
10
15
20
25
MAX2031
P
= 0dBm
LO
P
LO
= +3dBm
10
15
20
25
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
P
= -3dBm
LO
500
600
700
800
900
1000
50
100
150
200
250
300
350
600
750
900
1050
1200
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs
.
TEMPERATURE (T
)
C
0
10
20
30
100
90
V
= 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
80
LO
V
= 5.0V
CC
70
V
= 4.75V
CC
40
60
600
750
900
1050
1200
-40
-15
10
35
60
85
LO FREQENCY (MHz)
TE
M
PERATURE (
N
C)
12 ______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, L1 = 4.7nH, C4 = 6pF, C5 not used, V
= 5.0V, P
= 0dBm, P
= 0dBm, f
= f
+ f
, f
= 160MHz,
LO IF
RF LO IF
IF
CC
T
C
= +25°C, unless otherwise noted.)
Upconverter Curves
CONVERSION LOSS vs. RF FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
9
9
9
T
T
= +25
°
C
= -25
°
C
C
8
7
8
7
8
7
6
5
4
T =
+85
°
C
C
P
LO
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
6
5
4
3
6
5
4
3
C
T
C
= -40
°
C
750
800
850
900
950 1000
1050
750
800
850
900
950 1000 1050
750
800
850
900
950 1000 1050
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
INPUT IP3 vs. RF FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
INPUT IP3 vs. RF FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
39
39
39
P
= 0dBm/TONE
P
IF
= 0dBm/TONE
P =
0dBm/TONE
IF
T
C
= -25
°
C
IF
T
C
= -40
°
C
V
= 5.25V
CC
37
35
33
31
29
27
25
37
35
33
31
29
27
25
37
35
33
31
29
27
25
P
LO
= -3dBm, 0dBm, +3dBm
V
CC
= 4.75V
T
C
= +85
°
C
V
= 5.0V
CC
T
C
= +25
°
C
750
800
850
900
950 1000
1050
750
800
850
900
950 1000
1050
750
800
850
900
950 1000
1050
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO + 2IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
LO + 2IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
LO + 2IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
80
80
80
P
= 0dBm
P =
0dBm
IF
P
IF
= 0dBm
IF
T
C
= +25
°
C
T
C
= -40
°
C, -25
°
C
V
= 5.25V
75
70
65
60
55
50
75
70
65
60
55
50
75
70
65
60
55
50
CC
P
= +3dBm
LO
V
CC
= 5.0V
T
= +85
°
C
C
P
LO
= -3dBm
V
CC
= 4.75V
P
LO
= 0dBm
910
960 1010
1060 1110 1160
1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160
1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160
1210
LO FREQUENCY (MHz)
______________________________________________________________________________________
13
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, L1 = 4.7nH, C4 = 6pF, C5 not used, V
= 5.0V, P
= 0dBm, P
= 0dBm, f
= f
+ f
, f
= 160MHz,
LO IF
RF LO IF
IF
CC
T
C
= +25°C, unless otherwise noted.)
Upconverter Curves
LO – 2IF REJECTION vs. LO FREQUENCY
LO – 2IF REJECTION vs. LO FREQUENCY
LO – 2IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
80
80
80
P
IF
= 0dBm
P
IF
= 0dBm
P =
0dBm
IF
V
= 5.25V
T
C
= -40
°
C, -25
°
C
CC
MAX2031
75
70
65
60
55
50
75
70
65
60
55
50
75
70
65
60
55
50
P
= +3dBm
LO
T
= +85
°
C
C
V
= 5.0V
CC
T
C
= +25
°
C
P
= 0dBm
LO
V
= 4.75V
CC
P
= -3dBm
LO
910
960 1010
1060 1110 1160
1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160
1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160
1210
LO FREQUENCY (MHz)
LO + 3IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
LO + 3IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
LO + 3IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
90
90
90
P
= 0dBm
P =
0dBm
V
IF
P
IF
= 0dBm
= 5.25V
IF
CC
80
70
60
50
80
70
60
50
80
70
60
50
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V
CC
T
= -40
°
C, -25
°
C, +25
°
C, +85
°
C
C
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
LO – 3IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
LO – 3IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
LO – 3IF REJECTION vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
90
90
90
P
IF
= 0dBm
T
C
= -40
°
C, -25
°
C, +25
°
C
P
IF
= 0dBm
P =
0dBm
IF
V
= 5.25V
CC
80
70
60
50
80
70
60
50
80
70
60
50
P
= -3dBm, 0dBm, +3dBm
LO
T
= +85
°
C
C
V
= 4.75V
CC
V
CC
= 5.0V
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
14 ______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
T
y
pical Operating Characteristics (continued)
(
Typical Application Circuit
, L1 = 4.7nH, C4 = 6pF, C5 not used, V
= 5.0V, P
= 0dBm, P
= 0dBm, f
= f
+ f
, f
= 160MHz,
LO IF
RF LO IF
IF
CC
T
C
= +25°C, unless otherwise noted.)
Upconverter Curves
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
-15
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
-15
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
-15
-20
-20
-25
-30
-35
-20
-25
-30
-35
T
= -40
°
C, -25
°
C
C
V
= 5.25V
CC
-25
-30
-35
P
= -3dBm, 0dBm, +3dBm
LO
V
= 5.0V
CC
T
C
= +85
°
C
V
CC
= 4.75V
T
C
= +25
°
C
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
IF LEAKAGE AT RF vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
IF LEAKAGE AT RF vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
IF LEAKAGE AT RF vs. LO FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
-50
-50
-50
-60
-70
-80
-90
P
= -3dBm
T
= +25
°
C
LO
V
CC
= 5.0V
C
C
V
CC
= 5.25V
-60
-60
T
C
= -40
°
C, -25
°
C
P
LO
= 0dBm
-70
-70
V
CC
= 4.75V
P
= +3dBm
LO
T
= +85
°
C
-80
-80
-90
-90
-100
-100
-100
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
910
960 1010
1060 1110 1160 1210
LO FREQUENCY (MHz)
RF PORT RETURN LOSS vs. RF FREQUENCY
(L-C BPF TUNED FOR 810MHz RF FREQUENCY)
0
L1 AND C4 BPF
REMOVED
5
10
15
20
25
30
35
L1 AND C4 BPF
INSTALLED
THE OPTIONAL L-C BPF
ENHANCES PERFORMANCE
IN THE UPCONVERTER
MODE BUT LIMITS
RF BANDWIDTH
750
800
850
900
950 1000
1050
RF FREQUENCY (MHz)
______________________________________________________________________________________
15
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
Pin Description
PIN
NAME
FUNCTION
Power-Supply Connection. Bypass each V
Application Circuit
.
pin to GND with capacitors as shown in the
Typical
CC
1, 6, 8, 14
V
CC
2
3
RF
Single-Ended 50
Ω
RF Input/Output. This port is internally matched and DC shorted to GND through a balun.
TAP
Center Tap of the Internal RF Balun. Connect to ground.
4, 5, 10, 12,
13, 16, 17, 20
MAX2031
GND
Ground
7
9
LOBIAS Bias
Resistor for Internal LO Buffer. Connect a 523
Ω
1% resistor from LOBIAS to the power supply.
LOSEL Local
Oscillator Select. Logic-control input for selecting LO1 or LO2.
11
LO1
LO2
Local Oscillator Input 1. Drive LOSEL low to select LO1.
Local Oscillator Input 2. Drive LOSEL high to select LO2.
15
18, 19
IF-, IF+
Differential IF Input/Outputs
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
—
EP
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground
vias are also required to achieve the noted RF performance.
side LO injection applications with an extended LO
Detailed Description
range, but performance degrades as f
decreases. See
LO
The MAX2031 can operate either as a downconverter or
an upconverter mixer that provides approximately 7dB of
conversion loss with a typical 7dB noise figure. IIP3 is
+36dBm for both upconversion and downconversion
modes. The integrated baluns and matching circuitry
allow for 50
Ω
single-ended interfaces to the RF port and
the two LO ports. The RF port can be used as an input
for downconversion or an output for upconversion. A sin-
gle-pole, double-throw (SPDT) switch provides 50ns
switching time between the two LO inputs with 49dB of
LO-to-LO isolation. Furthermore, the integrated LO buffer
provides a high drive level to the mixer core, reducing
the LO drive required at the MAX2031’s inputs to a
-3dBm to +3dBm range. The IF port incorporates a dif-
ferential output for downconversion, which is ideal for
providing enhanced IIP2 performance. For upconver-
sion, the IF port is a differential input.
the
Typical Operating Characteristics
for measurements
taken with f
below 960MHz. For a pin-compatible
LO
device that has been optimized for LO frequencies below
960MHz, refer to the MAX2029.
RF Port and Balun
For using the MAX2031 as a downconverter, the RF
input is internally matched to 50
Ω
, requiring no external
matching components. A DC-blocking capacitor is
required because the input is internally DC shorted to
ground through the on-chip balun. For upconverter
operation, the RF port is a single-ended output similarly
matched to 50
Ω
.
LO Inputs, Buffer, and Balun
The MAX2031 is optimized for high-side LO injection
architectures with a 650MHz to 1250MHz LO frequency
range. For a device with a 570MHz to 900MHz LO fre-
quency range, refer to the MAX2029. As an added fea-
ture, the MAX2031 includes an internal LO SPDT switch
that can be used for frequency-hopping applications.
The switch selects one of the two single-ended LO
ports, allowing the external oscillator to settle on a par-
ticular frequency before it is switched in. LO switching
time is typically less than 50ns, which is more than ade-
quate for nearly all GSM applications. If frequency hop-
ping is not employed, set the switch to either of the LO
inputs. The switch is controlled by a digital input
(LOSEL): logic-high selects LO2, logic-low selects LO1.
Specifications are guaranteed over broad frequency
ranges to allow for use in cellular band WCDMA,
cdmaOne™, cdma2000, and GSM 850/GSM 900 2.5G
EDGE base stations. The MAX2031 is specified to oper-
ate over a 650MHz to 1000MHz RF frequency range, a
650MHz to 1250MHz LO frequency range, and a DC to
250MHz IF frequency range. Operation beyond these
ranges is possible; see the
Typical Operating
Characteristics
for additional details.
The MAX2031 is optimized for high-side LO injection
architectures. However, the device can operate in low-
cdmaOne is a trademark of CDMA Development Group.
16 ______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
To avoid damage to the part, voltage MUST be applied
Applications Information
to V
before digital logic is applied to LOSEL (see the
CC
Input and Output Matching
The RF and LO inputs are internally matched to 50
Ω
. No
matching components are required. As a downconvert-
er, the return loss at the RF port is typically better than
15dB over the entire input range (650MHz to 1000MHz),
and return loss at the LO ports are typically 15dB
(960MHz to 1180MHz). RF and LO inputs require only
DC-blocking capacitors for interfacing (see Table 1).
Absolute Maximum Ratings
). LO1 and LO2 inputs are
internally matched to 50
Ω
, requiring an 82pF DC-block-
ing capacitor at each input.
A two-stage internal LO buffer allows a wide input-
power range for the LO drive. All guaranteed specifica-
tions are for a -3dBm to +3dBm LO signal power. The
on-chip low-loss balun, along with an LO buffer, drives
the double-balanced mixer. All interfacing and match-
ing components from the LO inputs to the IF outputs
are integrated on-chip.
An optional L-C bandpass filter (BPF) can be installed at
the RF port to improve upconverter performance. See
the
Typical Application Circuit
and
Typical Operating
Characteristics
for upconverter operation with an L-C
BPF tuned for 810MHz RF frequency. Performance can
be optimized at other frequencies by choosing different
values for L1 and C4. Removing L1 and C4 altogether
results in a broader match, but performance degrades.
Contact factory for details.
High-Linearity Mixer
The core of the MAX2031 is a double-balanced, high-
performance passive mixer. Exceptional linearity is pro-
vided by the large LO swing from the on-chip LO buffer.
Differential IF
The MAX2031 mixer has a DC to 250MHz IF frequency
range. Note that these differential ports are ideal for pro-
viding enhanced IIP2 performance. Single-ended IF
applications require a 1:1 balun to transform the 50
Ω
dif-
ferential IF impedance to 50
Ω
single-ended. Including
the balun, the IF return loss is better than 15dB. The dif-
ferential IF is used as an input port for upconverter oper-
ation. The user can use a differential IF amplifier following
the mixer, but a DC block is required on both IF pins.
The IF output impedance is 50
Ω
(differential). For eval-
uation, an external low-loss 1:1 (impedance ratio) balun
transforms this impedance to a 50
Ω
single-ended out-
put (see the
Typical Application Circuit).
Bias Resistor
Bias current for the LO buffer is optimized by fine tun-
ing resistor R1. If reduced current is required at the
Table 1. Typical Application Circuit Component List
DESIGNATION
QTY
DESCRIPTION
SUPPLIER
82pF microwave capacitor (0603).
Use for
800MHz/900MHz cellular band
applications.
C1
1
Murata Electronics North America, Inc.
7pF microwave capacitor (0603).
Use for
700MHz band
applications
C2, C7, C8, C10,
C11, C12
6
82pF microwave capacitors (0603)
Murata Electronics North America, Inc.
C3, C6, C9
C4*
3
1
0.01µF microwave capacitors (0603)
6pF microwave capacitor (0603)
Murata Electronics North America, Inc.
—
2pF microwave capacitor (0603).
Use for
800MHz/900MHz cellular band
applications.
C5**
1
Murata Electronics North America, Inc.
3.3pF microwave capacitor (0603).
Use for
700MHz band
applications
L1*
R1
T1
1
1
1
1
4.7nH inductor (0603)
—
Digi-Key Corp.
523
Ω
1% resistor (0603)
MABAES0029 1:1 transformer (50:50)
MAX2031 IC (20 TQFN)
M/A-Com, Inc.
U1
Maxim Integrated Products, Inc.
*
C4 and L1 installed only when mixer is used as an upconverter.
**
C5 installed only when mixer is used as a downconverter.
______________________________________________________________________________________ 17
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
expense of performance, contact the factory for details.
If the
1% bias resistor values are not readily available,
substitute standard
5% values.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for high-
frequency circuit stability. Bypass each V
pin with
CC
the capacitors shown in the
Typical Application Circuit
.
See Table 1.
Layout Considerations
A properly designed PC board is an essential part of
any RF/microwave circuit. Keep RF signal lines as short
as possible to reduce losses, radiation, and induc-
tance. For the best performance, route the ground-pin
traces directly to the exposed pad under the package.
The PC board exposed pad
MUST
be connected to the
ground plane of the PC board. It is suggested that mul-
tiple vias be used to connect this pad to the lower-level
ground planes. This method provides a good RF/ther-
mal conduction path for the device. Solder the exposed
pad on the bottom of the device package to the PC
board. The MAX2031 evaluation kit can be used as a
reference for board layout. Gerber files are available
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX2031’s 20-pin thin
QFN-EP package provides a low-thermal-resistance
path to the die. It is important that the PC board on
which the MAX2031 is mounted be designed to con-
duct heat from the EP. In addition, provide the EP with
a low-inductance path to electrical ground. The EP
MUST
be soldered to a ground plane on the PC board,
either directly or through an array of plated via holes.
MAX2031
18 ______________________________________________________________________________________
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
MAX2031
T
y
pical Application Circuit
T1
1
3
4
5
IF
C5
V
CC
20
19
18
17
16
+
C3
C2
C4
C12
1
2
3
4
5
15
14
13
12
11
LO2
V
LO2
C1
CC
RF
V
CC
MAX2031
V
RF
CC
C11
TAP
GND
GND
GND
GND
LO1
L1
E.P.
6
LO1
C10
7
8
9
10
R1
V
CC
LOSEL
C6
C7
C8
V
CC
NOTE:
L1 AND C4 USED ONLY FOR UPCONVERTER OPERATION.
C5 USED ONLY FOR DOWNCONVERTER OPERATION.
C9
Package Information
Chip Information
For the latest package outline information and land patterns, go
PROCESS: SiGe BiCMOS
PACKAGE TYPE
PACKAGE CODE
DOCUMENT NO.
20 Thin QFN-EP
T2055+3
______________________________________________________________________________________ 19
High-Linearit
y
,
6
50MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
Revision History
REVISION REVISION
PAGES
CHANGED
DESCRIPTION
NUMBER
DATE
0
1
7/05
Initial release
Added new
Electrical Characteristics
tables and
Typical Operating Characteristics
—
6/09
1–16
MAX2031
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
20
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94086 408-737-7600
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Maxim Integrated Products
Maxim is a registered trademark of Maxim Integrated Products, Inc.
