AnBon-2N7002T
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2N7002T
N-Channel MOSFET
SOT-523 Plastic-Encapsulate MOSFETS
I
D
V
(BR)DSS
R
DS(on)
MAX
SOT-523
#
ȍ
ꢂꢁ9
ꢀ
ꢀ
ꢀ
9
ꢀꢁ
ꢀꢀꢁ
P
$
1. GATE
#
ꢂ
ȍ ꢃ9
ꢀ
ꢀ
2. SOURCE
3. DRAIN
APPLICATION
FEATURE
z
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z
z
z
z
High density cell design for low R
DS(ON)
z
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Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
M
$5.,1*
Equivalent Circuit
MAXIMUM RATINGS (T
a
=25
Я
unless otherwise noted)
Symbol
V
DS
Parameter
Value
Unit
Drain-Source voltage
60
V
V
GS
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I
D
Drain Current
115
mA
P
D
Power Dissipation
150
mW
R
ș
JA
833
Thermal Resistance from Junction to Ambient
Junction
T
e
mperature
Я
ꢀ:
Я
T
J
150
T
stg
Storage
T
e
mperature
-55
~+
150
Я
TEL:886-755-23776891
FAX:
886-755-81482182
Document ID
AS-3150003
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
4
Page 1
2N7002T
N-Channel MOSFET
SOT-523 Plastic-Encapsulate MOSFETS
026)(7ꢀꢀ(/(&75,&$/ꢀ&+$5$&7(5,67,&6
T =25
a
unless otherwise specified
Я
Parameter
Symbol
Test
conditions
M
in
60
1
T
yp
Max
Unit
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
(BR)DSS
V
th(GS)
l
GSS
V
GS
=0
V
,
I
D
=
25
0
µ
A
V
DS
=V
GS
, I
D
=250
µ
A
V
DS
=0
V
,
V
GS
=
±
2
ꢃ
V
V
DS
=60
V
,
V
GS
=0 V
V
GS
=10
V
,
V
DS
=7 V
V
GS
=10
V
,
I
D
=500
m
A
V
ꢂꢄꢅ
±
8
ꢁ
0
ꢁ
80
Gate-body Leakage
nA
nA
Zero Gate Voltage Drain Current
On-state Drain Current
I
DSS
I
D(ON)
500
80
mA
ꢀ
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
R
DS(
o
n)
ȍ
V
GS
=5
V
,
I
D
=50
m
A
7
g
fs
V
DS
=10
V
,
I
D
=200
m
A
V
GS
=10
V
, I
D
=500
m
A
ms
V
3.75
0.375
1.2
50
V
DS(on)
V
GS
=5
V
,
I
D
=50
m
A
V
Diode Forward Voltage
Input Capacitance
V
SD
C
iss
C
oss
C
r
ss
I
S
=115mA, V
GS
=0 V
0.55
V
V
DS
=25
V
,
V
GS
=0V, f=1MHz
pF
Output Capacitance
25
Reverse Transfer Capacitance
SWITCHING TIME
5
t
d(on)
t
d(off)
20
40
V
DD
=25
V
,
R
L
=50
:
I
D
=500mA,V
GEN
=10 V
R
G
=25
:
Turn-on Time
Turn-off Time
ns
TEL:886-755-23776891
FAX:
886-755-81482182
Document ID
AS-3150003
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
4
Page 2
2N7002T
N-Channel MOSFET
SOT-523 Plastic-Encapsulate MOSFETS
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TEL:886-755-23776891
FAX:
886-755-81482182
Document ID
AS-3150003
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
Page.
D
4
Page 3
2N7002T
N-Channel MOSFET
SOT-523 Plastic-Encapsulate MOSFETS
627ꢃ
5
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Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.700
0.000
0.700
0.150
0.250
0.100
1.500
0.700
1.450
Max.
0.900
0.100
0.800
0.250
0.350
0.200
1.700
0.900
1.750
Min.
0.028
0.000
0.028
0.006
0.010
0.004
0.059
0.028
0.057
Max.
0.035
0.004
0.031
0.010
0.014
0.008
0.067
0.035
0.069
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
0.500 T
Y
P
.
0.400 REF.
0.020 TYP.
0.016 REF.
0.900
1.100
0.035
0.043
L1
ș
0.260
0°
0.460
8°
0.010
0°
0.018
8°
627ꢃ
5
2
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ꢀ
TEL:886-755-23776891
FAX:
886-755-81482182
Document ID
AS-3150003
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
Page.
4
D
Page 4
