AnBon-AS2300

AS2300  

N-Channel Enhancement Mode MOSFET  

Product Summary  

V

(BR)DSS  

R

DS(on)MAX  

I

D  

25mΩ@4.5V  

32mΩ@2.5V  

49mΩ@1.8V  

20V  

4.5A  

Feature  

Application  

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ò

Advanced trench process technology  

High density cell design for ultra low on-resistance  

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ò

Load Switch for Portable Devices  

DC/DC Converter  

Package  

Circuit diagram  

SOT-23  

Marking  

S0.  

Document ID  

AS-3150030  

Issued Date  

2003/03/08  

Revised Date  

2018/05/16  

Revision  

E

Page.  

5

Page 1  

AS2300  

N-Channel Enhancement Mode MOSFET  

Absolute maximum ratings (Ta=25

℃

unless otherwise noted)  

Parameter  

Symbol  

V

DS  

V

GS  

I

D  

Value  

20  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

±10  

V

Continuous Drain Current  

Pulsed Drain Current  

Power Dissipation  

4.5  

A

I

DM  

18  

A

P

D  

1.0  

W

Junction

T

emperature  

Storage

T

emperature  

T

J  

150  

T

STG  

-55 ~ +150  

Electrical characteristics (T

A

=25

o

C, unless otherwise noted)  

Parameter  

Symbol  

Test Condition  

Min.  

Typ. Max.  

Unit  

Static Characteristics  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

Gate threshold voltage  

V

(BR)DSS

V

GS

= 0

V

,

I

D

=250µA  

20  

V

µA  

nA  

V

I

DSS  

I

GSS  

V

DS

=20

V

,

V

GS

= 0V  

V

GS

=±10

V

,

V

DS

= 0V  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=4.5V, I

D

=4.5A  

V

GS

=2.5V, I

D

=3.0A  

V

GS

=1.8V, I

D

=2.7A  

1

±100  

1.0  

25  

V

GS(th)  

0.45  

Drain-source on-resistance

1)  

R

DS(on)  

32  

mΩ  

49  

Dynamic characteristics

2)  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

620  

114  

64  

Output Capacitance  

V

DS

=10

V

,

V

GS

=0V,f =1MHz  

pF  

nC  

Reverse Transfer Capacitance  

Total Gate Charge  

7.1  

1.4  

1.9  

13  

V

DS

=10

V

,

V

GS

=4.5

V

,  

I

D

=4.5A  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Turn-on delay time  

Turn-on rise time  

54  

V

DD

=10

V

,

V

GS

=4.5

V

,  

R

GEN

=3Ω, R

L

=1.5Ω  

nS  

Turn-off delay time  

t

d(off)  

t

f  

18  

Turn-off fall time  

11  

Source-Drain Diode characteristics  

Diode Forward Current

1)  

Diode Forward voltage  

I

S  

4.5  

1.2  

A

V

V

DS  

V

GS

=0

V

,

I

S

=4.5A  

Notes:  

1)  

2)  

Pulse

T

e

st: Pulse Width < 300µs, Duty Cycle ≤2%.  

Guaranteed by design, not subject to production testing.  

Document ID  

AS-315030  

Issued Date  

2003/03/08  

Revised Date  

2018/05/16  

Revision  

Page.  

5

Page 2  

E

AS2300  

N-Channel Enhancement Mode MOSFET  

Typical Characteristics  

Document ID  

AS-315030  

Issued Date  

2003/03/08  

Revised Date  

2018/05/16  

Revision  

E

Page.  

5

Page 3  

AS2300  

N-Channel Enhancement Mode MOSFET  

Typical Characteristics  

Document ID  

AS-315030  

Issued Date  

2003/03/08  

Revised Date  

2018/05/16  

Revision  

E

Page.  

5

Page 4  

AS2300  

N-Channel Enhancement Mode MOSFET  

SOT-23 Package Information  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

Max.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min.  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

Max.  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

0.950 TYP.  

0.550 REF.  

0.037 TYP.  

0.022 REF.  

e1  

L

1.800  

0.300  

2.000  

0.500  

0.071  

0.012  

0.079  

0.020  

L1  

Document ID  

AS-315030  

Issued Date  

2003/03/08  

Revised Date  

2018/05/16  

Revision  

E

Page.  

5

Page 5