AnBon-AS2304

N-Channel 30V(D-S) MOSFET  

AS2304  

SOT-23 Plastic-Encapsulate MOSFETS  

SOT-23  

FEATURE  

TrenchFET Power MOSFET  

1. GATE  

APPLICATIONS  

2. SOURCE  

3. DRAIN  

z

z

Load Switch for Portable Devices  

DC/DC Converter  

MARKING: B6  

Maximum ratings (T

a

=25

℃

unless otherwise noted)  

Characteristic  

特性參數  

Symbol  

符號  

Max  

最大值  

Unit  

單位  

Drain-Source

V

o

ltage  

漏極-源極電壓  

BV

DSS  

V

GS  

I

D  

30  

V

V

A

A

Gate- Source

V

o

ltage  

栅極-源極電壓  

+20  

2.5  

10  

Drain Current (continuous)  

漏極電流-連續  

Drain Current (pulsed)  

漏極電流-脉冲  

I

DM  

Total Device Dissipation  

總耗散功率  

P

D

1250  

mW  

T

=

25

℃環境溫度爲

25

℃  

A

T

J  

T

stg  

Junction

結溫  

150  

℃

℃

Storage Temperature

 

儲存溫度  

-55to+150  

TEL:886-755-23776891  

FAX:

886-755-81482182  

Document ID  

AS-3150034  

Issued Date  

2003/03/08  

Revised Date  

2012/05/16  

Revision  

D

Page.  

3

Page 1  

N-Channel 30V(D-S) MOSFET  

AS2304  

SOT-23 Plastic-Encapsulate MOSFETS  

Electrical characteristics (T

a

=25

℃

unless otherwise noted)  

Characteristic  

特性參數  

Symbol  

符號  

Min  

Typ  

最小值

典型值

最大值  

Max  

Unit  

單位  

Drain-Source Breakdown

V

o

ltage  

漏極-源極擊穿電壓

(I

D

=250uA,V =0V)  

BV  

30  

1.5  

—

—

—

—

—

3

V

V

V

DSS  

GS  

Gate Threshold

V

o

ltage  

V

GS(th)  

栅極開启電壓

(I

D

=250uA,V =

 

V )  

GS  

DS  

Diode Forward

V

o

ltage Drop  

内附二極管正向壓降

(I

S

= 1.25A,V

 

=0V)  

V

1.2  

SD  

DSS  

GSS  

GS  

Zero Gate

V

o

ltage Drain Current  

I

I

—

—

1

u

A  

零栅壓漏極電流

(V =0

V

,

 

V =

 

3

0V)  

GS  

DS  

Gate Body Leakage  

栅極漏電流

(V =+20

V

,

 

V

=

0V)  

—

—

—

—

—

—

—

92  

+100  

117  

190  

—

n

A  

mΩ  

mΩ  

pF  

GS  

DS  

Static Drain-Source On-State Resistance  

R

DS(ON)  

静态漏源導通電阻

(I

D

= 2.5A,V

 

= 10V)  

GS  

Static Drain-Source On-State Resistance  

R

DS(ON)  

142  

240  

110  

8

静态漏源導通電阻

(I

D

= 2A,V

 

= 4.5V)  

GS  

Input Capacitance

輸入電容  

C

ISS  

(V =0

V

,

 

V =

 

1

5

V

,

f=1MHz)  

GS  

DS  

Output Capacitance

輸出電容  

(V =0

V

,

 

V =

 

1

5

V

,

f=1MHz)  

C

—

pF  

OSS  

GS  

DS  

Turn-ON Time

开启時間  

(V =15

V

,

 

I =

 

1

A, R  

GEN  

t

—

ns  

(on)  

=6

Ω

)  

=6

Ω

)  

DS  

D

Turn-OFF Time

关断時間  

(V =

 

15

V

, I

 

=

1A, R  

t

—

17  

—

ns  

(off)  

DS  

D

GEN  

Pulse Width<300

μ

s; Duty Cycle<2.0%  

TEL:886-755-23776891  

FAX:

886-755-81482182  

Document ID  

AS-3150034  

Issued Date  

2003/03/08  

Revised Date  

2012/05/16  

Revision  

D

Page.  

3

Page 2  

N-Channel 30V(D-S) MOSFET  

AS2304  

SOT-23 Plastic-Encapsulate MOSFETS  

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Dimensions In Millimeters  

Dimension

s

I

n Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

0.95

0

T

YP  

0.55

0

R

EF  

0.03

7

T

YP  

0.02

2

R

EF  

1.800  

2.000  

0.071  

0.079  

L1  

ș

0.300  

0°  

0.500  

8°  

0.012  

0°

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢁ

°  

0.020  

627ꢀꢁꢂ 6XJJHVWHGꢃ3DGꢃ/DR

X

ꢀ

W  

TEL:886-755-23776891  

FAX:

886-755-81482182  

Document ID  

AS-3150034  

Issued Date  

2003/03/08  

Revised Date  

2012/05/16  

Revision  

D

Page.  

3

Page 3