AnBon-AS3404
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AS3404
N-Channel Enhancement Mode MOSFET
Product Summary
V
(BR)DSS
R
DS(on)MAX
29mΩ@10V
40mΩ@4.5V
I
D
30V
5.6A
Feature
Application
ò
ò
Advanced trench process technology
High density cell design for ultra low on-resistance
ò
ò
Load Switch for Portable Devices
DC/DC Converter
Package
Circuit diagram
SOT-23
Marking
R4.
Document ID
AS-3150012
Issued Date
2003/03/08
Revised Date
2022/01/16
Revision
F
Page.
5
Page 1
AS3404
N-Channel Enhancement Mode MOSFET
Absolute maximum ratings (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
V
GS
I
D
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
5.6
A
I
DM
30
A
P
D
1.2
W
Junction
T
emperature
Storage
T
emperature
T
J
150
T
STG
-55 ~ +150
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ. Max.
Unit
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
V
(BR)DSS
V
GS
= 0
V
,
I
D
=250µA
30
V
µA
nA
V
I
DSS
I
GSS
V
DS
=30
V
,
V
GS
= 0V
V
GS
=±20
V
,
V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=5.6A
V
GS
=4.5V, I
D
=5.0A
1
±100
2.2
29
V
GS(th)
1
Drain-source on-resistance
1)
R
DS(on)
mΩ
40
Dynamic characteristics
2)
Input Capacitance
C
iss
C
oss
C
rss
Q
g
490
92
Output Capacitance
V
DS
=15
V
,
V
GS
=0V,f =1MHz
V
DS
=15
V
,
V
GS
=10
V
,
I
D
=5.6A
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
68
5.2
0.9
1.3
4.5
2.5
14.5
3.5
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on delay time
Turn-on rise time
V
DD
=15
V
,
V
GS
=4.5
V
,
I
D
=1A
R
GEN
=2.8Ω
nS
Turn-off delay time
t
d(off)
t
f
Turn-off fall time
Source-Drain Diode characteristics
Diode Forward Current
1)
Diode Forward voltage
I
S
5.6
1.2
A
V
V
DS
V
GS
=0
V
,
I
S
=5.6A
Notes:
1)
2)
Pulse
T
e
st: Pulse Width < 300µs, Duty Cycle ≤2%.
Guaranteed by design, not subject to production testing.
Document ID
AS-3150012
Issued Date
2003/03/08
Revised Date
2022/01/16
Revision
Page.
5
Page 2
F
AS3404
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Document ID
AS-3150012
Issued Date
2003/03/08
Revised Date
2022/01/16
Revision
F
Page.
5
Page 3
AS3404
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Document ID
AS-3150012
Issued Date
2003/03/08
Revised Date
2022/01/16
Revision
F
Page.
5
Page 4
AS3404
N-Channel Enhancement Mode MOSFET
SOT-23 Package Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.
20
0
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.00
8
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
0.950 TYP.
0.550 REF.
0.037 TYP.
0.022 REF.
e1
L
1.800
0.300
2.000
0.500
0.071
0.012
0.079
0.020
L1
Document ID
AS-3150012
Issued Date
2003/03/08
Revised Date
2022/01/16
Revision
F
Page.
5
Page 5
