AnBon-AS3423

P-Channel MOSFET  

AS3423  

SOT-23 Plastic-Encapsulate MOSFETS  

SOT-23  

FEATURE  

TrenchFET Power MOSFET  

1. GATE  

APPLICATIONS  

2. SOURCE  

3. DRAIN  

z

z

Load Switch for Portable Devices  

DC/DC Converter  

MARKING: AS23  

■

Maximum ratings (T

a

=25

℃

unless otherwise noted)  

Characteristic  

特性參數  

Symbol  

符號  

Max  

最大值  

Unit  

單位  

Drain-Source

V

o

ltage  

漏極-源極電壓  

BV

DSS  

V

GS  

I

D  

-20  

+10  

-2  

V

V

A

A

Gate- Source

V

o

ltage  

栅極-源極電壓  

Drain Current (continuous)  

漏極電流-連續  

Drain Current (pulsed)  

漏極電流-脉冲  

I

DM  

-8  

Total Device Dissipation  

總耗散功率  

P

D

900  

mW  

A

T

J  

Junction

結溫  

150  

℃

℃

T

stg  

Storage Temperature

 

儲存溫度  

-55to+150  

TEL:886-755-23776891  

FAX:886-755-81482182  

Document ID  

AS-3150021  

Issued Date  

2003/03/08  

Revised Date  

2012/05/16  

Revision  

D

Page.  

3

Page 1  

P-Channel MOSFET  

AS3423  

SOT-23 Plastic-Encapsulate MOSFETS  

■

Maximum ratings (T

a

=25

℃

unless otherwise noted)  

Characteristic  

特性參數  

Symbol  

符號  

Min  

Typ  

最小值

典型值

最大值  

Max  

Unit  

單位  

Drain-Source Breakdown

V

o

ltage  

漏極-源極擊穿電壓

(I

D

= -250uA,V

 

=0V)  

BV  

-20  

-0.65  

—

—

—

—

—

V

V

V

DSS  

GS  

Gate Threshold

V

o

ltage  

-1.4  

-1.5  

V

GS(th)  

栅極開启電壓

(I

D

= -250uA,V

 

= V

 

)  

GS  

DS  

Diode Forward

V

o

ltage Drop  

V

SD  

DSS  

GSS  

内附二極管正向壓降

(I

S

= -1A,V

 

=0V)  

GS  

Zero Gate

V

o

ltage Drain Current  

零栅壓漏極電流

(V =0

V

,

 

V =

 

–

16V)  

I

I

—

—

-0.5  

-2.5  

u

A  

GS  

DS  

(V =0

V

,

 

V =

 

–

16

V

, T

 

=

55

℃

)  

GS  

DS  

A

Gate Body Leakage  

栅極漏電流

(V =+8

V

,

 

V

=

0V)  

—

—

—

—

—

—

—

—

76  

+10  

92  

u

A  

mΩ  

mΩ  

mΩ  

pF  

GS  

DS  

Static Drain-Source On-State Resistance  

R

DS(ON)  

R

DS(ON)  

R

DS(ON)  

静态漏源導通電阻

(I

D

= -2A,V

 

= -10V)  

GS  

Static Drain-Source On-State Resistance  

94  

118  

166  

—

静态漏源導通電阻

(I

D

= -2A,V

 

= -4.5V)  

GS  

Static Drain-Source On-State Resistance  

128  

510  

53  

静态漏源導通電阻

(I

D

= -1A,V

 

= -2.5V)  

GS  

Input Capacitance

輸入電容  

C

ISS  

(V =0

V

,

 

V =

 

–

10

V

,

f=1MHz)  

GS  

DS  

Output Capacitance

輸出電容  

(V =0

V

,

 

V =

 

–

10

V

,

f=1MHz)  

C

—

pF  

OSS  

GS  

DS  

Turn-ON Time

开启時間  

(V =

 

-10

V

, I

 

=

–

2.8A, R  

GEN  

t

1300  

—

ns  

(on)  

=6

Ω

)  

=6

Ω

)  

DS  

D

Turn-OFF Time

关断時間  

(V =

 

-10

V

, I

 

=

–

2.8A, R  

GEN  

t

—

4800  

—

ns  

(off)  

DS  

D

Pulse Width<300

μ

s; Duty Cycle<2.0%  

TEL:886-755-23776891  

FAX:886-755-81482182  

Document ID  

AS-3150021  

Issued Date  

2003/03/08  

Revised Date  

2012/05/16  

Revision  

Page.  

3

D

Page 2  

P-Channel MOSFET  

AS3423  

SOT-23 Plastic-Encapsulate MOSFETS  

ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊꢈꢋꢌꢆꢁꢍꢎꢏꢐꢑꢌꢆꢒꢐꢓꢌꢑꢔꢐꢕꢑꢔꢆ  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

c

D

E

E1  

e

0.950 T

Y

P  

0.550 REF  

0.037 T

Y

P  

0.022 REF  

e1  

L

1.800  

2.000  

0.071  

0.079  

L1  

ꢀ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

6°  

ꢀꢁꢂꢃꢄꢅꢆꢀꢍꢋꢋꢌꢔꢎꢌꢖꢆꢇꢈꢖꢆꢗꢈꢘꢕꢍꢎ

ꢀ

 

TEL:886-755-23776891  

FAX:886-755-81482182  

Document ID  

AS-3150021  

Issued Date  

2003/03/08  

Revised Date  

2012/05/16  

Revision  

Page.  

D

3

Page 3