AnBon-BC847A
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BC846/BC847/BC848
SOT-23 NPN Plastic-Encapsulate Transistors
FEATURES
z
Ideally suited for automatic insertion
For
s
witching and AF
a
mplifier
a
pplications
SOT-23
z
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
Unit
V
Collector-Base Voltage
80
50
30
BC846
BC847
BC848
V
CEO
Collector-Emitter Voltage
V
65
45
BC846
BC847
BC848
30
V
EBO
I
C
Emitter-Base Voltage
6
V
A
Collector Current –Continuous
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
Junction
T
e
mperature
0.1
P
C
200
625
150
–
5
5
~+
150
mW
℃
/W
℃
R
ΘJA
T
J
T
stg
Storage
T
e
mperature
℃
DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
Document ID
AS-221704
Issued Date
2008/02/10
Revised Date
2011/08/04
Revision
Page.
4
B
Page 1
BC846/BC847/BC848
SOT-23 NPN Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
80
50
30
65
45
30
6
Typ Max
Unit
Collector-base breakdown voltage
BC846
BC847
BC848
BC846
BC847
BC848
V
CBO
I
C
= 10µA, I
E
=0
V
Collector-emitter breakdown voltage
V
CEO
V
EBO
I
CBO
I
C
= 10mA, I
B
=0
I
E
= 10µA, I
C
=0
V
Emitter-base breakdown voltage
Collector cut-off current
V
BC8
4
6
BC8
4
7
BC8
4
8
BC8
4
6
BC8
4
7
BC8
4
8
V
CB
=70 V , I
E
=0
V
CB
=50 V , I
E
=0
V
CB
=30 V , I
E
=0
0.1
0.1
μ
A
Collector cut-off current
V
CE
=60 V , I
B
=0
V
CE
=45 V , I
B
=0
CE
=30 V , I
B
=0
I
CEO
I
EBO
h
FE
μ
A
μ
A
V
Emitter cut-off current
DC current gain
V
EB
=5 V ,
I
C
=0
0.1
220
450
800
0.5
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
110
200
420
V
CE
= 5V,
I
C
= 2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
I
C
=100mA, I
B
= 5mA
I
C
=100mA, I
B
= 5mA
V
CE
= 5
V
,
I
C
= 10mA
f=
100MHz
V
V
1.1
Transition frequency
100
MHz
pF
f
T
Collector output capacitance
C
ob
V
CB
=10
V
,
f=
1
MHz
4.5
Document ID
AS-221704
Issued Date
2008/02/10
Revised Date
2011/08/04
Revision
B
Page.
4
Page 2
BC846/BC847/BC848
SOT-23 NPN Plastic-Encapsulate Transistors
Typical Characteristics
Static Characteristic
h
FE
——
I
C
10
8
3000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= 5V
1000
T
a
=100
℃
20uA
18uA
16uA
6
T
a
=25
℃
14uA
12uA
100
4
10uA
8uA
6uA
2
4uA
I
B
=2uA
0
10
0
1
2
3
4
5
6
7
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
1000
800
600
400
200
500
β
=20
β
=20
T
a
=25
℃
T
a
=100
℃
100
T
a
=25
℃
T
a
=100
℃
10
0.1
1
10
100
0.1
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
100
500
COMMON EMITTER
V
CE
=5V
10
100
1
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
0.1
0.2
10
0.25
0.4
0.6
0.8
1.0
2
4
6
8
10
12
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(V)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
250
200
150
100
50
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0
0.1
0
25
50
75
100
125
150
30
0.1
1
10
AMBIENT TEMPERATURE
T
a
(
℃
)
REVERSE VOLTAGE
V
(V)
Document ID
AS-221704
Issued Date
2008/02/10
Revised Date
2011/08/04
Revision
Page.
4
B
Page 3
BC846/BC847/BC848
SOT-23 NPN Plastic-Encapsulate Transistors
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
6°
SOT-23 Suggested Pad Layout
Document ID
AS-221704
Issued Date
2008/02/10
Revised Date
2011/08/04
Revision
Page.
4
B
Page 4
