ANHI-ADW120N080G2
| Part # | ANHI-ADW120N080G2 |
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ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
1200V N-Channel Silicon Carbide Power MOSFET
1. Applications
Asymmetrical Bridge
C
on
ve
rt
er
I
nver
Single
ly
bac
t
e
r
S
w
i
t
c
h Fo
rw
ard
F
k
2. Features
Low drain-source on-resistance: RDS(ON) = 80m
Ω (typ.)
Easy to control Gate switching
Enhancement mode: Vth = 2 to 4 V
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
1200
100
Unit
V
m
Ω
nC
A
58
I
D,pulse
94
3. Packaging and Internal Circuit
Part Name
Package
Marking
ADQ120N080G2
ADW120N080G2
ADG120N080G2
TO-247-4L
TO-247-3L
TO-263-7L
ADQ120N080G2
ADW120N080G2
ADG120N080G2
TO-247-4L
TO-247-3L
TO-263-7L
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
1 Maximum
ratings
at
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
35
–
–
–
A
TC=25°C
Continuous drain current
1)
I
D
–
26
A
TC=100°C
E
AS
Avalanche energy, single pulse
–
–
200
mJ
Tc=25
℃
,VDD=50V,L=1mH,
RG=25Ω
Gate source voltage (static)
Power dissipation
V
GS
P
tot
-5
–
–
–
–
–
–
20
V
static;
188
1.9
175
175
W
TC=25°C
Derating factor above 25°C
Storage temperature
–
W/°C
°C
T
stg
T
j
-55
-55
Operating junction temperature
°C
Soldering Temperature
T
L
300
–
°C
S
Distance of 1.6mm from case for 10s
–
8.33
7.14
VDS=20V IDS=20A
Transconductance
GFS
VDS=20V IDS=20A, Tj=150°C
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
2
Thermal characteristics
Table 3
Thermal characteristics
TO247
Values
Typ.
0.65
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
0.8
R
thJC
Thermal resistance, junction
– case
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
40
°C/W device
on PCB, minimal footprint
TO263-7L
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
1.0
R
thJC
R
thJA
Thermal resistance, junction
– case
Thermal resistance, junction
– ambient
–
–
–
–
°C/W –
62
°C/W device
on PCB, minimal footprint
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
1200
2.0
–
Max.
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,
I
D
=1mA
Drain-source breakdown voltage
Gate threshold voltage
2.8 4.0
V
DS
=
V
GS
,
I
D
=10mA
V
DS
=1200V,
V
GS
=0V
–
uA
1
I
DSS
Zero gate voltage drain current
Gate-source leakage current
Gate-source leakage current
I
GSS+
I
GSS-
R
DS(on)
V
GS
=20V,
V
DS
=0V
–
–
–
–
100
nA
V
GS
=-5V,
V
DS
=0V
–
-100
nA
100
V
GS
=20V,
I
D
=20A,
T
j
=25°C
80
Drain-source on-state resistance
m
Ω
V
GS
=20V,
I
D
=20A,
T
j
=150°C
f
=1MHz, open drain
93.1
4.5
Ω
R
G
Gate resistance (Intrinsic)
–
–
Table 5
Dynamic characteristics
Values
Typ.
1377
62
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
–
–
–
–
–
–
pF
pF
pF
V
GS
=0V,
V
DS
=1000V,
f
=200KHz
V
GS
=0V,
V
DS
=1000V,
f
=200KHz
V
GS
=0V,
V
DS
=1000V,
f
=200KHz
Input capacitance
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
4
t
d(on)
Turn-on delay time
–
–
–
–
10
–
–
–
–
ns
ns
ns
ns
uJ
uJ
t
r
Rise time
6
V
DD
=800V,
V
GS
=20V
,
Turn-off delay time
Fall time
t
d(off)
t
f
16
R
G
=0
Ω
;
I
D
=20A,
T
J
=25
℃
10
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
748.8
31.2
Table 6
Gate charge characteristics
Values
Typ.
18
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Q
gs
Q
gd
Q
g
–
–
–
–
–
–
nC
nC
nC
V
DD
=800V,
I
D
=20A,
V
GS
=20V
V
DD
=800V,
I
D
=20A,
V
GS
=20V
V
DD
=800V,
I
D
=20A,
V
GS
=20V
Gate to source charge
Gate to drain charge
Gate charge total
17
58
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
Table 7
Reverse diode characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
–
Max.
Continuous Source Current
Diode forward voltage
I
SD
–
–
35
–
A
V
SD
3.8
V
I
S
= 10A, V
GS
= 0V
,
T
j
=25°C
Reverse recovery time
t
rr
–
–
–
57
–
–
–
ns
V
DD
=800V
，
I
D
V
GS
=-4V
=+15V,-
V
GS
=20A, +
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
195
6.84
n
C
L
Load
=500uH
，
Rg=0Ω
，
T
J
=25
℃
A
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
4 Electrical
characteristics diagram
Diagram 1: Typ. output characteristics
Diagram 2: Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
I
D
=f(
V
DS
);
T
j
=175 °C; parameter:
V
GS
Diagram 3: Typ. transfer characteristics
Diagram 4: Typ. gate charge
I
D
=f(
V
GS
);
V
DS
=20V; parameter:
T
j
V
GS
=f(
Q
gate
);
I
D
=20A ;
V
DS
=800V; turn-on pulse
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
Diagram 5: Typical gate-source threshold voltage as a
function of junction temperature
Diagram 6: Typ. Capacitance as a function of drain-source
voltage
V
GS(th)
=f(
T
j
);
I
DS
=10mA;
V
GS
=
V
DS
C
=f(
V
DS
);
V
GS
=0V;
f
=1MHz
Diagram 7: Normalized on-resistance as a function of junction
Diagram 8: Typical body diodes forward voltage as function of
temperature
junction temperature
R
DS(ON)
=f(
T
j
);
I
DS
=20A
V
SD
=f(
T
j
);
V
GS
=0V;
I
SD
=10A
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
Diagram 9: Typical body diodes forward current as function of Diagram 10: Typical body diodes forward current as function
V
GS
as parameter
V
GS
as parameter
forward voltage,
of forward voltage,
I
SD
=f(
V
SD
);
T
j
=25 °C
I
SD
=f(
V
SD
);
T
j
=175 °C
Diagram 12: Power dissipation as a function of case
temperature limited by bond wire
Diagram 11: Safe operating area(SOA)
V
GS
=0/18V;
T
C
=25 °C;
T
j
<175 °C
P
tot
= f(
T
C
)
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
Diagram 13: Maximum DC drain to source current as a
function of case temperature limited by bond wire
Diagram 14: Maximum source to drain current as a function of
case temperature limited by bond wire
I
DS
= f(
T
C
)
I
SD
= f(
T
C
),
V
GS
=0V
Diagram 15: Max. transient thermal resistance(MOSFET/diodes)
Z
th(j-c,max)
= f(
t
p
),parameter D=
t
p
/
T
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
5
Test Circuits
Table 8
Diode characteristics
Table 9
Switching times
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
6
Package Outlines
TO-247-4L
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
TO-247-3L
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
TO-263-7L
ADQ
120N080G2,
ADW
120N080G2, ADG120N080G2
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
2022-05-27
