ANHI-AGW75N65
| Part # | ANHI-AGW75N65 |
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AGW75N65
Trench-FS Cool-Watt
@
Ⅱ
IGBT
1. Applications
Inverter power supply
UPS
PV
2. Features
CoolWatt
@
Ⅱ
Trench-FS technology
Low V
CESAT
Low switching losses
With anti-parallel fast recovery diode
Positive temperature coefficient
High reliability
Table 1
Key Performance Parameters
Parameter
V
CES
Value
650
1.3
Unit
V
V
CE(sat)
V
GE(th)
V
5.6
V
Q
g,typ
142
225
nC
A
I
Cpuls
3. Packaging and Internal Circuit
Part Name
Package
Marking
AGW75N65
TO247
AGW75N65
TO247
AGW75N65
1
Maximum ratings
at
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
–
Collector-emitter voltage
DC collector current
V
CES
V
650
–
–
–
–
–
–
–
–
–
–
–
–
–
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
vj
≤150
℃
I
C
A
A
150
75
I
Cpuls
Pulse collector current
–
225
A
Repetitive peak reverse voltage
Diode continuous forward current
V
RRM
I
F
T
C
=25°C
650
–
V
A
A
A
T
C
=25°C
150
75
T
C
=100°C
–
I
Fpuls
V
GE
Diode pulse current
Gate-emitter voltage
T
vj
≤150
℃
–
225
20
-20
-30
–
V
static;
Transient
（
tp
≤
10uS,D
＜
0.01
）
T
C
=25°C
30
V
Power dissipation
P
tot
T
stg
T
j
469
150
175
W
°C
°C
Storage temperature
-50
-40
Operating junction temperature
Soldering Temperature
T
L
260
°C
Distance of 1.6mm from case for 10s
AGW75N65
2
Thermal characteristics
Table 3
Thermal characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
0.32
0.45
40
R
thJC-IGBT
R
thJC-FRD
R
thJA
IGBT thermal resistance junction
FRD thermal resistance junction
Thermal resistance junction
K/W
K/W
K/W
– case
–
–
–
–
–
–
–
–
–
– case
– ambient
AGW75N65
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
V
V
GE
= 0V,I
C
=0.25mA,T
vj
=25
℃
650
–
–
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=15V, I
C
=30A, T
vj
=25
℃
V
GE
=15V, I
C
=30A, T
vj
=150
℃
V
V
–
–
1.3
2
–
1.85
V
GE
= V
CE
,I
C
=1.5mA,T
vj
=25
℃
V
GE
= 0V,I
F
=30A, T
vj
=25
℃
V
5.1
5.6
6.1
V
GE(th)
V
F
Gate-emitter threshold voltage
Diode forward voltage
V
V
–
–
–
–
–
1.35
1.85
–
V
GE
= 0V,I
F
=30A T
vj
=150
℃
,
1.2
V
GE
=30V,V
CE
=0V
nA
I
GES
I
CES
–
–
200
0.2
1.0
Zero collector voltage gate current
Zero gate voltage collector current
V
CE
=650V,V
GE
=0V, T
vj
=25
℃
V
CE
=650V,V
GE
=0V, T
vj
=150
℃
mA
mA
–
Integrated gate resistor
R
Gin
Ω
—
—
0
—
Table 5
Dynamic characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Input capacitance
C
ies
3910
–
–
pF
V
GE
= 0V,V
CE
= 30V,
ƒ
= 1MHz, T
vj
=25
℃
Output capacitance
C
oes
C
res
244
V
GE
= 0V,V
CE
= 30V,
ƒ
= 1MHz, T
vj
=25
℃
V
GE
= 0V,V
CE
= 30V,
ƒ
= 1MHz, T
vj
=25
℃
–
–
–
–
pF
pF
Reverse transfer capacitance
34.0
Q
g
Gate charge
142
V
GE
=0/15V,V
cc
=400V,I
C
=75A,T
vj
=25
℃
V
GE
=0/15V,V
cc
=400V,I
C
=75A,T
vj
=25
℃
–
–
–
–
–
–
–
–
nC
nC
nC
V
Gate-emitter charge
Gate-collector charge
Q
ge
Q
gc
34.6
63.0
V
GE
=0/15V,V
cc
=400V,I
C
=75A,T
vj
=25
℃
I
C
=75A,V
CE
=520V,V
GE
=0/15V,T
vj
=25
℃
Gate-emitter plateau voltage
V
GE
(pl)
9.65
AGW75N65
Table 6
Switching characteristics
Values
Typ.
76.0
Parameter
Symbol
Unit Note
/ Test Condition
Min.
—
—
—
—
—
—
—
Max.
—
—
—
—
—
—
—
Vcc=400V,Ic=75A,
Turn-on delay time
Rise time
T
d(on)
T
r
ns
Ron=10
Ω
, Roff=10
Ω
,
115
ns
Cge=0nF,V
GE
=0/15V,
T
d(off)
t
f
Turn-off delay time
Fall time
196
ns
L
load
=60uH,T
vj
=25
℃
79.0
ns
E
on
Turn-on energy
Turn-off energy
Total switch energy
3.08
mJ
mJ
mJ
E
off
E
total
2.22
5.30
Values
Typ.
71.0
Parameter
Symbol
Unit Note
/ Test Condition
Min.
—
—
—
—
—
—
—
Max.
—
—
—
—
—
—
—
Vcc=400V,Ic=75A,
Turn-on delay time
Rise time
T
d(on)
T
r
ns
Ron=10
Ω
, Roff=10
Ω
,
120
ns
Cge=0nF,V
GE
=0/15V,
T
d(off)
t
f
Turn-off delay time
Fall time
211
ns
L
load
=60uH,T
vj
=150
℃
82.0
ns
Turn-on energy
Turn-off energy
Total switch energy
E
on
5.21
mJ
mJ
mJ
E
off
E
total
2.57
7.78
AGW75N65
Table 7
Diode characteristics
Values
Typ.
301
Parameter
Symbol
Unit Note
/ Test Condition
Min.
—
Max.
—
I
F
=75A,V
R
=400V,
V
GE
=0/15V,R
ON
=10
Ω
,T
vj
=25
℃
Erec
trr
Reverse recovery energy
uJ
Diode reverse recovery time
—
207
—
nS
Diode reverse recovery charge
Qrr
—
—
1355
18.6
—
—
nC
A
Diode peak reverse recovery current
Irrm
Diode peak rate of fall of reverse
Recovery current during t
rr
di
rr
/dt
—
119
—
A/uS
Values
Typ.
991
Parameter
Symbol
Unit Note
/ Test Condition
Min.
—
Max.
—
I
F
=75A,V
R
=400V,
V
GE
=0/15V,R
ON
=10
Ω
,T
vj
=150
℃
Erec
trr
Reverse recovery energy
uJ
Diode reverse recovery time
—
323
—
nS
Qrr
Diode reverse recovery charge
—
—
4812
34.7
—
—
nC
A
Diode peak reverse recovery current
Irrm
Diode peak rate of fall of reverse
Recovery current during t
rr
di
rr
/dt
—
184
—
A/uS
AGW75N65
4
Electrical characteristics diagram
AGW75N65
AGW75N65
AGW75N65
AGW75N65
AGW75N65
5
Test Circuits
AGW75N65
6
Package Outlines
Outline PG‐TO247
(HT)
AGW75N65
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
2023-02-28
