ANHI-ASA50R130E

ASA50R130E  

MOSFET Silicon N-Channel MOS  

1. Applications  

Single-ended flyback or two-transistor forward topologies.  

PC power, PD Adaptor, LCD & PDP TV and LED lighting.  

2. Features  

Low drain-source on-resistance: RDS(ON) = 0.113Ω (typ.)  

Easy to control Gate switching  

Enhancement mode: Vth = 2.5 to 3.5 V  

Table 1

 

Key Performance Parameters  

Parameter  

V

DS

@ T

j,max  

R

DS(on),max  

Q

g,typ  

Value  

Unit  

550  

V

130  

m

Ω

32.6  

70  

nC  

A

I

D,pulse  

3. Packaging

 

and Internal Circuit  

Part Name  

ASA50R130E  

Package  

TO220F  

Marking  

ASA50R130E  

TO220F  

ASA50R130E  

1

Maximum ratings  

at

T

j

= 25°C, unless otherwise specified  

Table 2

 

Maximum ratings  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Continuous drain current

1)  

Pulsed drain current

2)  

I

D  

A

–

–

29  

70  

T

C

=25°C  

T

C

=25°C  

I

D,pulse  

E

AS  

–

–

A

Tc=25℃,VDD=50V,ID=9.1A,  

L = 10mH, RG=25Ω  

Avalanche energy, single pulse  

–

414  

mJ  

Tc=25℃,VDD=50V,L=10mH,  

RG=25Ω  

Avalanche current, single pulse  

I

AR  

–

–

9.1  

A

Gate source voltage (static)  

Power dissipation  

V

GS  

P

tot  

T

stg  

T

j  

-30  

–

–

–

–

–

–

30  

V

static;  

T

C

=25°C  

76  

W

°C  

°C  

Storage temperature  

-55  

-55  

–

150  

150  

12.3  

Operating junction temperature  

dv/dt  

V/ns

Vds=0-400v  

V/ns

Vds=0-400v  

MOSFET dv/dt ruggedness  

Reverse diode dv/dt  

，

IF=7.7A  

dv/dt  

–

–

199  

ASA50R130E  

2

Thermal characteristics  

Table 3

 

Thermal characteristics  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

3.62  

78  

Thermal resistance, junction

 

– case  

R

thJC  

–

–

–

–

°C/W –  

Thermal resistance, junction

 

– ambient

 

R

thJA  

°C/W device

 

on PCB, minimal footprint  

ASA50R130E  

3

Electrical characteristics  

at

T

j

=25°C, unless otherwise specified  

Table 4

 

Static characteristics  

Values  

Typ.  

–

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

500  

2.5  

–

Max.  

–

V

GS

=0V,

I

D

=250uA  

Drain-source breakdown voltage  

Gate threshold voltage  

V

(BR)DSS  

V

(GS)th  

V

V

V

DS

=

V

GS

,

I

D

=250uA  

3.5  

–

–

V

DS

=500V,

V

GS

=0V,

T

j

=25°C  

uA  

1

Zero gate voltage drain current  

Gate-source leakage current  

I

DSS  

I

GSS  

V

GS

=30V,

V

DS

=0V  

–

–

100  

nA  

Ω

0.113 0.130  

V

GS

=10V,

I

D

=10A,

T

j

=25°C  

R

DS(on)  

R

G  

Drain-source on-state resistance  

Gate resistance (Intrinsic)  

Ω

–

24.2  

–

f

=1MHz, open drain  

Table 5

 

Dynamic characteristics  

Values  

Typ.  

1446  

79  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

V

GS

=0V,

V

DS

=100V,

f

=1MHz  

V

GS

=0V,

V

DS

=100V,

f

=1MHz  

V

GS

=0V,

V

DS

=100V,

f

=1MHz  

Input capacitance  

C

iss  

C

oss  

C

rss  

–

–

–

–

–

–

pF  

pF  

pF  

Output capacitance  

Reverse transfer capacitance  

1.31  

V

GS

=13V,  

V

GS

=13V,  

V

GS

=13V,  

V

GS

=13V,  

V

DD

=400V,  

R

G

=3.4

Ω  

I

D

=7.7A,  

I

D

=7.7A,  

I

D

=7.7A,  

I

D

=7.7A,  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

20  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=400V,  

R

G

=3.4

Ω  

13  

V

DD

=400V,  

R

G

=3.4

Ω  

Turn-off delay time  

Fall time  

144  

25  

V

DD

=400V,  

R

G

=3.4

Ω  

Table 6

 

Gate charge characteristics  

Values  

Typ.  

6.5  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

V

DD

=400V,

I

D

=7.7A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=7.7A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=7.7A,

V

GS

=0 to 10V  

Gate to source charge  

Gate to drain charge  

Gate charge total  

Q

gs  

Q

gd  

Q

g  

–

–

–

–

–

–

nC  

nC  

nC  

11.4  

32.9  

ASA50R130E  

Table 7

 

Reverse diode characteristics  

Values  

Typ.  

0.7  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Diode forward voltage  

Reverse recovery time  

V

SD  

t

rr  

–

–

V

V

GS

=0V,

I

F

=1A,

T

j

=25°C  

V

R

=400V,

I

F

=7.7A, d

i

F

/d

t

=100A/µs  

–

–

–

205  

2.0  

–

–

–

ns  

V

R

=400V,

I

F

=7.7A, d

i

F

/d

t

=100A/µs  

V

R

=400V,

I

F

=7.7A, d

i

F

/d

t

=100A/µs  

Reverse recovery charge  

Q

rr  

I

rrm  

u

C  

Peak reverse recovery current  

20.3  

A

ASA50R130E  

4

Test Circuits  

Table 8

 

Diode characteristics  

Table 9

 

Switching times  

Table 10

 

Unclamped inductive load  

ASA50R130E  

5

Package Outlines  

Figure1

：

Outline PG‐TO220F  

ASA50R130E  

Revision History  

Revision

Date  

Subjects (major changes since last revision)  

Preliminary version  

1.0  

2021-10-27