ANHI-ASA60R210E

ASA60R210E  

MOSFET Silicon N-Channel MOS  

1. Applications  

Boost PFC switch,single-ended flyback ortwo-transistor forward,  

Half bridge or Asymmetric half bridge or Series resonance half bridge topologies.  

PC power, Adaptor,LCD & PDP TV,LED Lighting,Server power,  

Telecom power and UPS application.  

2. Features  

Low drain-source on-resistance: RDS(ON) = 0.18Ω (typ.)  

Easy to control Gate switching  

Enhancement mode: Vth = 2.8 to 4.2 V  

Table 1

 

Key Performance Parameters  

Parameter  

V

DS

@ T

j,max  

R

DS(on),max  

Q

g,typ  

Value  

Unit  

650  

V

210  

m

Ω

32.23  

60  

nC  

A

I

D,pulse  

3. Packaging and Internal Circuit  

ASA60R210E  

1

Maximum ratings  

at

T

j

= 25°C, unless otherwise specified  

Table 2

 

Maximum ratings  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Continuous drain current

1)  

Pulsed drain current

2)  

I

D  

A

–

–

20  

T

C

=25°C  

T

C

=25°C  

I

D,pulse  

E

AS  

dv/dt  

V

GS  

V

GS  

P

tot  

–

60  

A

Avalanche energy, single pulse  

MOSFET dv/dt ruggedness  

Gate source voltage (static)  

Gate source voltage (dynamic)  

Power dissipation  

–

–

–

–

–

–

–

–

898  

135  

20  

mJ  

–

V/ns

V

DS

=0…400V  

-20  

-30  

–

V

static;  

30  

V

AC (f>1 Hz)  

T

C

=25°C  

33  

W

°C  

°C  

Storage temperature  

T

stg  

-55  

-55  

150  

150  

T

j  

Operating junction temperature  

V

DS

=0…400V,

I

SD

<=48A,

T

j

=25°C  

see table 8  

Reverse diode dv/dt

3)  

dv/dt  

–

–

15  

V/ns  

ASA60R210E  

2

Thermal characteristics  

Table 3

 

Thermal characteristics  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

3.8  

Thermal resistance, junction

 

– case  

R

thJC  

–

–

–

–

°C/W –  

Thermal resistance, junction

 

– ambient

 

R

thJA  

80  

°C/W device

 

on PCB, minimal footprint  

ASA60R210E  

3

Electrical characteristics  

at

T

j

=25°C, unless otherwise specified  

Table 4

 

Static characteristics  

Values  

Typ.  

–

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

605  

2.8  

–

Max.  

–

V

GS

=0V,

I

D

=10mA  

Drain-source breakdown voltage  

Gate threshold voltage  

V

(BR)DSS  

V

(GS)th  

V

V

V

DS

=

V

GS

,

I

D

=250uA  

4.2  

–

V

DS

=600V,

V

GS

=0V,

T

j

=25°C  

nA  

100  

100  

0.21  

Zero gate voltage drain current  

Gate-source leakage current  

I

DSS  

I

GSS  

V

GS

=30V,

V

DS

=0V  

–

–

–

nA  

Ω

0.18  

V

GS

=10V,

I

D

=7.5A,

T

j

=25°C  

R

DS(on)  

R

G  

Drain-source on-state resistance  

Gate resistance (Intrinsic)  

Ω

–

5.6  

–

f

=1MHz, open drain  

Table 5

 

Dynamic characteristics  

Values  

Typ.  

1547  

134  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

V

GS

=0V,

V

DS

=50V,

f

=10kHz  

V

GS

=0V,

V

DS

=50V,

f

=10kHz  

V

GS

=0V,

V

DS

=50V,

f

=10kHz  

Input capacitance  

C

iss  

C

oss  

C

rss  

–

–

–

–

–

–

pF  

pF  

pF  

Output capacitance  

Reverse transfer capacitance  

5.28  

V

GS

=13V,  

V

DD

=400V,  

R

G

=3.4

Ω

;

see table 9  

V

GS

=13V,  

I

D

=8A,  

I

D

=8A,  

I

D

=8A,  

I

D

=8A,  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

12.4  

21.6  

52  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=400V,  

R

G

=3.4

Ω

;

see table 9  

V

GS

=13V,  

V

DD

=400V,  

R

G

=3.4

Ω

;

see table 9  

V

GS

=13V,  

Turn-off delay time  

Fall time  

V

DD

=400V,  

R

G

=3.4

Ω

;

see table 9  

18.8  

Table 6

 

Gate charge characteristics  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

V

DD

=400V,

I

D

=8A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=8A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=8A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=8A,

V

GS

=0 to 10V  

Gate to source charge  

Gate to drain charge  

Gate charge total  

Q

gs  

–

–

–

–

8.242  

10.85  

32.23  

5.7  

–

–

–

–

nC  

nC  

nC  

V

Q

gd  

Q

g  

Gate plateau voltage  

V

plateau  

ASA60R210E  

Table 7

 

Reverse diode characteristics  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Diode forward voltage  

Reverse recovery time  

V

SD  

t

rr  

–

0.72  

–

V

V

GS

=0V,

I

F

=1A,

T

j

=25°C  

V

R

=400V,

I

F

=8 A, d

i

F

/d

t

=100A/µs;  

see table 8  

–

–

–

275  

–

–

–

ns  

V

R

=400V,

I

F

=8 A, d

i

F

/d

t

=100A/µs;  

see table 8  

Reverse recovery charge  

Q

rr  

I

rrm  

3.809  

25.6  

uC  

A

V

R

=400V,

I

F

=8 A, d

i

F

/d

t

=100A/µs;  

see table 8  

Peak reverse recovery current  

ASA60R210E  

4

Test Circuits  

Table 8

 

Diode characteristics  

Table 9

 

Switching times  

Table10  

Unclamped inductive load  

ASA60R210E  

5

Package Outlines  

Figure1

：

Outline PG‐TO220F  

ASA60R210E  

Revision History  

ASA60R210E  

Revision

Date  

Subjects (major changes since last revision)  

Preliminary version  

0.1  

1.0  

2019-05-08  

2019-11-07  

Fine tune outline and add Crss test data.etc