ANHI-ASA65R270E
| Part # | ANHI-ASA65R270E |
Download  | ANHI-ASA65R270E |
ASD65R270E, ASA65R270E
MOSFET Silicon N-Channel MOS
1. Applications
Single-ended flyback or two-transistor forward topologies.
PC power, PD Adaptor, LCD & PDP TV and LED lighting.
2. Features
Low drain-source on-resistance: RDS(ON) = 236m
Ω
(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 2.8 to 4.2 V
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
700
270
23.2
58
Unit
V
m
Ω
nC
A
I
D,pulse
Body diode dv/dt
50
V/ns
3. Packaging
and Internal Circuit
Part Name
ASD65R270E
ASA65R270E
Package
TO252
Marking
ASD65R270E
TO220F
ASA65R270E
TO220F
TO252
ASD65R270E, ASA65R270E
1
Maximum ratings
at
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
15
Continuous drain current
1)
Pulsed drain current
2)
I
D
I
D,pulse
E
AS
A
–
–
–
T
C
=25°C
T
C
=25°C
–
–
58
A
Tc=25
℃
,VDD=50V, Iav=4.2A,
L=10mH,
RG=25Ω
Avalanche energy, single pulse
88
mJ
I
AR
Avalanche current, single pulse
–
–
4.2
A
Tc=25
℃
,VDD=50V, L=10mH,
RG=25Ω
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
V
DS
=0…400V
static;
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
–
–
–
–
–
–
80
V/ns
V
-20
-30
–
20
30
V
AC (f>1 Hz)
T
C
=25°C
125
150
150
W
Storage temperature
-55
-55
°C
°C
Operating junction temperature
Soldering Temperature
T
L
260
50
°C
Distance of 1.6mm from case for 10s
Reverse diode dv/dt3)
VDS=0…400V, ISD<=58A,
Tj=25°C
dv/dt
–
–
V/ns
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
ASD65R270E, ASA65R270E
2
Thermal characteristics
Thermal characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
0.99
62
R
thJC
R
thJA
Thermal resistance, junction
– case
Thermal resistance, junction
– ambient
–
–
–
–
°C/W –
°C/W device
on PCB, minimal footprint
ASD65R270E, ASA65R270E
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
650
2.8
–
Max.
–
V
(BR)DSS
V
(GS)th
Drain-source breakdown voltage
Gate threshold voltage
V
V
V
GS
=0V,
I
D
=250uA
V
DS
=
V
GS
,
I
D
=250uA
4.2
–
V
DS
=650V,
V
GS
=0V,
T
j
=25°C
uA
1
I
DSS
I
GSS
Zero gate voltage drain current
Gate-source leakage current
V
GS
=30V,
V
DS
=0V
–
–
–
100
270
nA
m
Ω
Ω
236
V
GS
=10V,
I
D
=5.5A,
T
j
=25°C
R
DS(on)
R
G
Drain-source on-state resistance
Gate resistance (Intrinsic)
–
32
–
f
=1MHz, open drain
Table 5
Dynamic characteristics
Values
Typ.
1160
29.1
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
C
oss
C
rss
Input capacitance
–
–
–
–
–
–
pF
pF
pF
V
GS
=0V,
V
DS
=400V,
f
=250kHz
V
GS
=0V,
V
DS
=400V,
f
=250kHz
V
GS
=0V,
V
DS
=400V,
f
=250kHz
Output capacitance
Reverse transfer capacitance
0.8
V
GS
=13V,
V
GS
=13V,
V
GS
=13V,
V
GS
=13V,
V
DD
=400V,
R
G
=10.2
Ω
V
DD
=400V,
R
G
=10.2
Ω
V
DD
=400V,
R
G
=10.2
Ω
V
DD
=400V,
R
G
=10.2
Ω
I
D
=5.2A,
I
D
=5.2A,
I
D
=5.2A,
I
D
=5.2A,
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
21.8
23.4
122.8
21.4
–
–
–
–
ns
ns
ns
ns
Turn-off delay time
Fall time
Table 6
Gate charge characteristics
Values
Typ.
5.4
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Q
gs
Q
gd
Q
g
Gate to source charge
Gate to drain charge
Gate charge total
–
–
–
–
–
–
nC
nC
nC
V
DD
=400V,
I
D
=5.2A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=5.2A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=5.2A,
V
GS
=0 to 10V
8.1
23.2
ASD65R270E, ASA65R270E
Table 7
Reverse diode characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
V
SD
t
rr
V
GS
=0V,
I
F
=1A,
T
j
=25°C
Diode forward voltage
Reverse recovery time
–
0.74
–
V
V
R
=400V,
I
F
=5.2A, d
i
F
/d
t
=100A/µs
–
–
–
210.5
1.7
–
–
–
ns
V
R
=400V,
I
F
=5.2A, d
i
F
/d
t
=100A/µs
V
R
=400V,
I
F
=5.2A, d
i
F
/d
t
=100A/µs
Q
rr
I
rrm
Reverse recovery charge
uC
A
Peak reverse recovery current
18
ASD65R270E, ASA65R270E
4
Electrical characteristics diagram
Diagram 1: Typ. output characteristics
Diagram 2: Typ. Coss stored energy
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
Eoss=f(VDS)
Diagram 3: Typ. transfer characteristics
Diagram 4: Typ. gate charge
I
D
=f(
V
GS
);parameter:
T
j
V
GS
=f(
Q
gate
);
I
D
=8A pulsed; parameter:
V
DD
ASD65R270E, ASA65R270E
Diagram 5: Drain-source breakdown voltage
Diagram 6: Typ. capacitances
V
BR(DSS)
=f(
T
j
);
I
D
=250uA
C
=f(
V
DS
);
V
GS
=0V;
f
=0.1MHz
Diagram7:Typ. On-Resistance vs. Junction Temperature
Diagram 8: Safe operating area T
C
=25 °C
，
R
ds(on)
=f(
T
j
);Vgs=10V/
I
D
=5.5A
I
D
=f(V
DS
); T
C
=25 °C; V
GS
> 7V; D=0; parameter tp
ASD65R270E, ASA65R270E
Diagram 9: Typ.
Power Diss
ipation
Diagram 10: Max. transient thermal impedance
P
tot
=f(
T
C
)
Z
t
h
J
C
=f(t
P
); parameter: D=t
p
/T
Diagram 11: Forward characteristics of reverse diode
Diagram 12: Maximum Id vs Junction Temperature
I
F
=f(
V
DS
);parameter:
Tj
ASD65R270E, ASA65R270E
5 Test
Circuits
Table 8
Diode characteristics
Table 9
Switching times
Table 10
Unclamped inductive load
ASD65R270E, ASA65R270E
6
Package Outlines
Figure1
：
Outlin
e PG‐TO2
52(HT)
ASD65R270E, ASA65R270E
Figure2
：
Outline
PG‐TO220F
(HT)
ASD65R270E, ASA65R270E
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
2022-02-21
Added
diagram of characterization
Added ASA65R270E TO220F
1.0
1.1
1.2
2021-11-12
2023-07-31
