ANHI-ASD65R550E
| Part # | ANHI-ASD65R550E |
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ASA65R550E, ASU65R550E, ASD65R550E
MOSFET Silicon N-Channel MOS
1. Applications
Boost PFC switch, single-ended flyback or two-transistor forward
topologies.
PD Adaptor, LCD & PDP TV and LED lighting.
2. Features
Low drain-source on-resistance: RDS(ON)
= 0.50Ω (typ.)
Easy to control Gate switching
Enhancement mode: Vth = 2.8 to 4.2 V
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
700
550
8.0
Unit
V
m
Ω
nC
A
I
40
D,pulse
Body diode dv
/dt
3
V/ns
3. Packaging
and Internal Circuit
Part Name
ASA65R550E
ASU65R550E
ASD65R550E
Package
Marking
TO220F
TO251
TO252
ASA65R550E
ASU65R550E
ASD65R550E
TO220F
TO251
TO252
ASA65R550E, ASU65R550E, ASD65R550E
1
Maximum ratings
at
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Typ.
Parameter
Symbol
I
D
Unit Note
/ Test Condition
Min.
Max.
Continuous
drain
current
1)
Pulsed
drain
current
2)
A
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8
T
C
=25°C
I
D,pulse
E
AS
E
AR
I
AS
T
C
=25°C
–
40
A
V
DD
=50V; L=49.9mH
V
DD
=50V; L=49.9mH
–
Avalanche energy,
single
pulse
Avalanche energy, repetitive
Avalanche
current, single
pulse
MOSFET dv/dt
ruggedness
Gate
source
voltage
(static)
Gate
source
voltage
(dynamic)
Power
dissipation
–
624
123
5.0
11
mJ
mJ
A
–
–
V
DS
=0…150V
static;
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
-20
-30
–
20
30
V
AC (f>1
Hz)
T
C
=25°C
178.1
150
150
–
W
Storage temperature
-55
-55
–
°C
°C
Ncm
A
Operating
junction
temperature
Mounting
torque
–
–
I
S
T
C
=25°C
Continuous
diode forward
current
Diode pulse
current
2)
–
48
I
S,pulse
T
C
=25°C
–
151
A
V
DS
=0…400V,
I
SD
<=48A,
T
j
=25°C
Reverse
diode
dv/dt
3)
dv/dt
–
–
15
V/ns
see
table
8
V
DS
=0…400V,
I
SD
<=48A,
T
j
=25°C
di
F
/dt
Maximum diode
commutation
speed
Insulation
withstand voltage
–
–
–
–
50
A/
s
see
table
8
V
ISO
V
rms
,
T
C
=25°C,
t
=1min
n.a.
V
1)
Limited by T
j,max
. Maximum Duty Cycle D =
0.50
2)
Pulse
width t
p
limited by T
j,max
3)
Identical low
side and high side switch with
identical
R
G
ASA65R550E, ASU65R550E, ASD65R550E
2 Thermal
characteristics
Table 3
Thermal characteristics
（TO220 FullPAK）
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
3.65
80
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W device
on PCB, minimal footprint
Thermal characteristics
（TO251 and TO252）
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
1.06
62
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W device
on PCB, minimal footprint
ASA65R550E, ASU65R550E, ASD65R550E
3 Electrical
characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
655
2.8
–
Max.
–
V
(BR)DSS
V
(GS)th
V
GS
=0V,
I
D
=10mA
Drain-source breakdown voltage
Gate
threshold voltage
V
V
V
DS
=
V
GS
,
I
D
=250uA
4.2
V
DS
=650V,
V
GS
=0V,
T
j
=25°C
–
nA
1
00
I
DSS
I
GSS
Zero gate voltage drain
current
Gate-source leakage current
V
GS
=30V,
V
DS
=0V
–
–
–
100
nA
Ω
0.55
V
GS
=10V,
I
D
=4A,
T
j
=25°C
0.50
R
DS(on)
R
G
Drain-source
on-state resistance
Gate resistance
(Intrinsic)
–
–
25
77
–
–
f
=1MHz, open drain
f
=1MHz, open drain
R
G
Gate resistance
(Integrated)
Table 5
Dynamic characteristics
Values
Typ.
599
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
C
oss
C
rss
V
GS
=0V,
V
DS
=50V,
f
=10kHz
V
GS
=0V,
V
DS
=50V,
f
=10kHz
V
GS
=0V,
V
DS
=50V,
f
=10kHz
Input
capacitance
–
–
–
–
–
–
pF
pF
pF
Output
capacitance
76
Reverse transfer capacitance
3.55
V
GS
=13V,
V
DD
=400V,
I
D
=3A,
t
d(on)
t
r
t
d(off)
t
f
26.8
24.8
127.6
21.2
Turn-on delay
time
Rise
time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
R
G
=6.8
Ω
;
see table 9
V
GS
=13V,
V
DD
=400V,
I
D
=3A,
R
G
=6.8
Ω
;
see table 9
V
GS
=13V,
V
DD
=400V,
I
D
=3A,
Turn-off delay
time
Fall
time
R
G
=6.8
Ω
;
see table 9
V
GS
=13V,
V
DD
=400V,
I
D
=3A,
R
G
=6.8
Ω
;
see table 9
Table 6
Gate charge characteristics
Values
Typ.
2.6
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Q
gs
V
DD
=400V,
I
D
=3A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=3A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=3A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=3A,
V
GS
=0 to 10V
Gate to
source charge
Gate to
drain
charge
Gate
charge total
–
–
–
–
–
–
–
–
nC
nC
nC
V
Q
gd
1.7
Q
g
8.0
V
plateau
Gate
plateau voltage
6.6
ASA65R550E, ASU65R550E, ASD65R550E
Table 7
Reverse diode characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
V
SD
t
rr
V
GS
=0V,
I
F
=3.8 A,
T
j
=25°C
Diode forward
voltage
Reverse recovery
time
–
0.81
–
V
V
R
=400V,
I
F
=3 A, d
i
F
/d
t
=100A/µs;
see table 8
–
–
–
174
–
–
–
ns
V
R
=400V,
I
F
=3 A, d
i
F
/d
t
=100A/µs;
see table 8
Q
rr
I
rrm
Reverse recovery
charge
1200
13.5
nC
A
V
R
=400V,
I
F
=3 A, d
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery
current
ASA65R550E, ASU65R550E, ASD65R550E
5 Test
Circuits
Table 8
Diode characteristics
Table 9
Switching times
Table 10
Unclamped inductive load
ASA65R550E, ASU65R550E, ASD65R550E
6 Package
Outlines
Figure3
：
Outline PG‐TO220F
ASA65R550E, ASU65R550E, ASD65R550E
Figure2
：
Outline PG-TO252
ASA65R550E, ASU65R550E, ASD65R550E
Figure3
：
Outline PG-TO251
ASA65R550E, ASU65R550E, ASD65R550E
Revision History
ASA65R550E
Revision
Date
Subjects
(major
changes
since last
revision)
Preliminary version
1.0
2.0
2019-04-11
2019-11-07
Fine tune outline and add Crss test data.etc
