ANHI-ASU65R550E

ASA65R550E

, ASU65R550E, ASD65R550E, ASE65R550E  

                                                                                               

MOSFET Silicon N-Channel MOS  

1. Applications  

Boost PFC switch,single-

ended flyback or

two-transistor forward  

topologies.  

PD Adaptor,LCD & PDP TV and

LED

lighting.  

2. Features  

Low drain-source on-

resistance: RDS(ON)

 

= 0.

50Ω (typ.)  

Easy to control Gate switching  

Enhancement mode: Vth = 2.8 to

4.2

V  

Table 1

 

Key Performance Parameters  

Parameter  

V

DS

@T

j,max  

R

DS(on),max  

Q

g,typ  

Value  

700  

550  

8.0  

Unit  

V

m

Ω



nC  

A

I

24  

D,pulse  

3. Packaging and Internal Circuit  

Part Name  

ASA65R550E  

ASU65R550E  

ASD65R550E  

ASE65R550E  

Package  

TO220F  

TO251  

Marking  

ASA65R550E  

ASU65R550E  

ASD65R550E  

ASE65R550E  

TO252  

SOT223  

TO220F  

TO251  

TO252  

SOT223  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

1

Maximum ratings  

at

T

j

= 25°C, unless otherwise specified  

Table 2

 

Maximum ratings  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Continuous

drain

current

1)  

Pulsed

drain

current

2)  

I

D  

I

D,pulse  

E

AS  

A

–

–

8

T

C

=25°C  

–

–

24  

624  

A

T

Avalancheenergy,

single

pulse  

–

mJ  

Tc=25℃,VDD=50V,L =

10

mH  

,

RG=25Ω  

I

AR  

Tc=25℃,VDD=50V,L = 10mH,  

RG=25Ω  

Avalanche current, single pulse  

–

–

7

A

MOSFETdv/dt

ruggedness  

Gate

source

voltage

(static)  

Gate

source

voltage

(dynamic)  

Power

dissipation (TO220F)  

Power

dissipation (TO252&TO251)  

Power

dissipation (SOT223)  

Storagetemperature  

dv/dt  

V

GS  

V

GS  

P

tot  

P

tot  

P

tot  

T

stg  

T

j  

–

–

–

–

–

–

–

–

–

15  

20  

30  

28  

63  

7

V/ns

V

DS

=0…400V  

-20  

-30  

–

V

static;  

V

AC(f>1

Hz)  

T

C

=25°C  

T

C

=25°C  

T

C

=25°C  

W

W

W

°C  

°C  

–

–

-55  

-55  

150  

150  

Operating

junction

temperature  

V

DS

=0…400V,

I

SD

<=48A,

T

j

=25°C  

Reverse

diode

dv/dt

3)  

dv/dt  

–

–

15  

V/ns  

see

table  

8

R

G  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

2

Thermal characteristics  

Table 3

 

Thermalcharacteristics

（TO220 FullPAK）  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

4.5  

Thermal resistance, junction

 

– case  

R

thJC  

–

–

–

–

°C/W –  

Thermal resistance, junction

 

– ambient

 

R

thJA  

80  

°C/W device

 

on PCB, minimal footprint  

Thermalcharacteristics

（TO251 and TO252）  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

2

Thermal resistance, junction

 

– case  

R

thJC  

–

–

–

–

°C/W –  

Thermal resistance, junction

 

– ambient

 

R

thJA  

62  

°C/W device

 

on PCB, minimal footprint  

Thermalcharacteristics

（SOT223）  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

18  

Thermal resistance, junction

 

-solder point

 

R

thJC  

–

–

–

–

°C/W –  

Thermal resistance, junction

 

– ambient  

R

thJA  

160  

°C/W device

 

on PCB, minimal footprint  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

3

Electrical characteristics  

at

T

j

=25°C,unless otherwise specified  

Table 4

 

Static characteristics  

Values  

Typ.  

–

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

655  

2.8  

–

Max.  

–

Drain-sourcebreakdownvoltage  

Gate

thresholdvoltage  

V

(BR)DSS  

V

(GS)th  

V

V

V

GS

=0V,

I

D

=10mA  

4.2  

V

DS

=

V

GS

,

I

D

=250uA  

–

V

DS

=650V,

V

GS

=0V,

T

j

=25°C  

nA  

1

00  

Zerogate voltage drain

current  

Gate-sourceleakagecurrent  

I

DSS  

I

GSS  

–

–

–

100  

nA  

Ω

V

GS

=30V,

V

DS

=0V  

0.55  

0.50  

V

GS

=10V,

I

D

=4A,

T

j

=25°C  

Drain-source

on-stateresistance  

Gate resistance  

R

DS(on)  

R

G  

–

25  

–

f

=1MHz, open drain  



Table 5

 

Dynamic characteristics  

Values  

Typ.  

599  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Input

capacitance  

C

iss  

C

oss  

C

rss  

–

–

–

–

–

–

pF  

pF  

pF  

V

GS

=0V,

V

DS

=50V,

f

=10kHz  

V

GS

=0V,

V

DS

=50V,

f

=10kHz  

V

GS

=0V,

V

DS

=50V,

f

=10kHz  

Output

capacitance  

76  

Reverse transfer capacitance  

3.55  

V

GS

=13V,  

V

DD

=400V,  

R

G

=6.8

Ω

;

see table 9  

V

GS

=13V,  

I

D

=3A,  

I

D

=3A,  

I

D

=3A,  

I

D

=3A,  

26.8  

24.8  

127.6  

21.2  

Turn-ondelay

time  

Rise

time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=400V,  

R

G

=6.8

Ω

;

see table 9  

V

GS

=13V,  

V

DD

=400V,  

R

G

=6.8

Ω

;

see table 9  

V

GS

=13V,  

Turn-offdelay

time  

Fall

time  

V

DD

=400V,  

R

G

=6.8

Ω

;

see table 9  

Table 6

 

Gate charge characteristics  

Values  

Typ.  

2.6  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Gate to

sourcecharge  

Gate todrain

charge  

Gate

chargetotal  

Q

gs  

–

–

–

–

–

–

–

–

nC  

nC  

nC  

V

V

DD

=400V,

I

D

=3A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=3A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=3A,

V

GS

=0 to 10V  

V

DD

=400V,

I

D

=3A,

V

GS

=0 to 10V  

Q

gd  

1.7  

Q

g  

8.0  

Gate

plateauvoltage  

V

plateau  

6.6  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

Table 7

 

Reverse diode characteristics  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

Diodeforward

voltage  

Reverserecoverytime  

V

SD  

t

rr  

–

0.76  

–

V

V

GS

=0V,

I

F

=1A,

T

j

=25°C  

V

R

=400V,

I

F

=3 A, d

i

F

/d

t

=100A/µs;  

see table 8  

–

–

–

174  

1.2  

–

–

–

ns  

V

R

=400V,

I

F

=3 A, d

i

F

/d

t

=100A/µs;  

see table 8  

Reverserecovery

charge  

Q

rr  

I

rrm  

uC  

A

V

R

=400V,

I

F

=3 A, d

i

F

/d

t

=100A/µs;  

see table 8  

Peakreverserecoverycurrent  

13.5  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

4

Electrical characteristics diagram  

Diagram 1: Typ. output characteristics  

Diagram 2: Typ. Coss stored energy  

I

D

=f(

V

DS

);

T

j

=25 °C; parameter:

V

GS  

Eoss=f(VDS)  

Diagram 3: Typ. transfer characteristics  

Diagram 4: Typ. gate charge  

I

D

=f(

V

GS

);parameter:

T

j  

V

GS

=f(

Q

gate

);

I

D

=3A pulsed; parameter:  

V

DD  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

Diagram 5: Drain-source breakdown voltage  

Diagram 6: Typ. capacitances  

V

BR(DSS)

=f(

T

j

);

I

D

=10mA  

C

=f(

V

DS

);

V

GS

=0V;

f

=10 kHz  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

5

Test Circuits  

Table 8

 

Diodecharacteristics  

Table 9

 

Switchingtimes  

Table10  

Unclamped inductiveload  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

6

Package Outlines  

Figure1

：

OutlinePG-TO220F  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

Figure2

：

OutlinePG-TO252  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

Figure3

：

OutlinePG-TO251  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

Figure3

：

OutlinePG-SOT223  

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E  

Revision History  

Revision

Date  

Subjects

(major

changes

since last

revision)  

Preliminary version  

0.1  

1.0  

1.1  

1.2  

1.3  

2019-04-11  

2019-11-07  

2020-03-30  

2020-04-18  

2021-02-03  

Fine tune outline and add Crss test data.etc  

Add Electrical characteristics Curve  

Add a

valanche energy test condition,

a

valanche current data and test condition  

Add part

“

ASE65R550E”