ANHI-ASW65R031EFD
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ASW65R031EFD
MOSFET Silicon N-Channel MOS
1. Applications
For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and
full bridge topologies.
Such as phase-shift-bridge(ZVS),LLC Application-Server Power,
Telecom Power, EV Charging, Solar inverter.
2. Features
Low drain-source on-resistance: RDS(ON) = 0.027
Ω (typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3.2 to 4.8 V
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
700
31
Unit
V
m
Ω
nC
A
150.9
267
I
D,pulse
Body diode dv/dt
50
V/ns
3. Packaging and Internal Circuit
Part Name
Package
Marking
ASW65R031EFD
TO247
ASW65R031EFD
TO247
ASW65R031EFD
1
Maximum ratings
at
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
89
Continuous drain current
1)
Pulsed drain current
2)
I
D
A
–
–
–
T
C
=25°C
T
C
=25°C
I
D,pulse
E
AS
–
–
267
414
A
Tc=25
℃
,VDD=50V,L=10mH,
Avalanche energy, single pulse
mJ
RG=25Ω
I
AR
Tc=25
℃
,VDD=50V,L=10mH,
Avalanche current, single pulse
–
–
9.1
A
RG=25Ω
V
DS
=0…400V
static;
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
–
–
–
–
–
–
80
V/ns
V
-20
-30
–
20
30
V
AC (f>1 Hz)
T
C
=25°C
500
150
150
W
Storage temperature
-55
-55
°C
°C
Operating junction temperature
Soldering Temperature
T
L
260
°C
Distance of 1.6mm from case for 10s
<=45A,
T
j
=25°C
Reverse diode dv/dt
3)
dv/dt
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
ASW65R031EFD
2
Thermal characteristics
Table 3
Thermal characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
0.25
R
thJC
Thermal resistance, junction
– case
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
nimal footprint
ASW65R031EFD
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
655
3.2
–
Max.
–
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,
I
D
=250uA
Drain-source breakdown voltage
Gate threshold voltage
V
DS
=
V
GS
,
I
D
=250uA
4.8
V
DS
=650V,
V
GS
=0V,
T
j
=25°C
–
–
uA
nA
5
I
DSS
I
GSS
Zero gate voltage drain current
Gate-source leakage current
V
GS
=30V,
V
DS
=0V
–
100
–
–
0.027 0.031
V
GS
=10V,
I
D
=28A,
T
j
=25°C
f
=1MHz, open drain
Ω
Ω
R
DS(on)
R
G
Drain-source on-state resistance
Gate resistance (Intrinsic)
3.3
–
Table 5
Dynamic characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
C
oss
C
rss
–
–
–
8031
–
–
–
pF
pF
pF
V
GS
=0V,
V
DS
=400V,
f
=1MHz
V
GS
=0V,
V
DS
=400V,
f
=1MHz
V
GS
=0V,
V
DS
=400V,
f
=1MHz
Input capacitance
Output capacitance
140.7
1.56
Reverse transfer capacitance
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
DD
=400V,
R
G
=3.4
Ω
I
D
=28A
I
D
=28A
I
D
=28A
I
D
=28A
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
39
–
–
–
–
ns
ns
ns
ns
V
DD
=400V,
R
G
=3.4
Ω
56
V
DD
=400V,
R
G
=3.4
Ω
Turn-off delay time
Fall time
138
7.3
V
DD
=400V,
R
G
=3.4
Ω
Table 6
Gate charge characteristics
Values
Typ.
40.4
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Q
gs
V
DD
=400V,
I
D
=28A,
V
GS
=10V
V
DD
=400V,
I
D
=28A,
V
GS
=10V
=28A,
V
GS
=10V
=28A,
V
GS
=10V
Gate to source charge
Gate to drain charge
Gate charge total
–
–
–
–
nC
nC
Q
gd
54.9
Q
g
Gate plateau voltage
V
plateau
ASW65R031EFD
Table 7
Reverse diode characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
V
SD
t
rr
V
GS
=0V,
I
F
=1A,
T
j
=25°C
Diode forward voltage
Reverse recovery time
–
0.63
–
V
Vr=400v,IF=28A,di/dt=100A/us
–
–
182
–
–
ns
Vr=400v,IF=28A,di/dt=100A/us
=28A,di/dt=100A/us
Reverse recovery charge
Q
rr
I
rrm
1.66
uC
Peak reverse recovery current
ASW65R031EFD
4 Electrical
characteristics diagram
Diagram 1: Typ. output characteristics
Diagram 2: Typ. Coss stored energy
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
Eoss=f(VDS)
Diagram 3: Typ. transfer characteristics
Diagram 4: Typ. gate charge
I
D
=f(
V
GS
);parameter:
T
j
V
GS
=f(
Q
gate
);
I
D
=28A pulsed; parameter:
V
DD
ASW65R031EFD
Diagram 5: Drain-source breakdown voltage
Diagram 6: Typ. capacitances
V
BR(DSS)
=f(
T
j
);
I
D
=1mA
C
=f(
V
DS
);
V
GS
=0V;
f
=1MHz
Diagram7:Typ. On-Resistance vs. Junction Temperature
Diagram 8: Safe operating area T
C
=25 °C
，
TO247
On-Resistance vs.Junction Temperature
2.2
2.0
1.8
1.6
R@28A/10V
1.4
1.2
1.0
0.8
25
50
75
100
125
Tj (C)
R
ds(on)
=f(
T
j
);Vgs=10V/
I
D
=28A
7V; D=0; parameter tp
ASW65R031EFD
Diagram 10: Max. transient thermal impedance
Diagram 9: Typ.
Power Diss
ipation
P
tot
=f(
T
C
)
Z
thJC
=f(t
P
); parameter: D=t
p
/T
Diagram 11: Forward characteristics of reverse diode
Diagram 12: Typ.Drain-source on-state resistance
I
F
=f(
V
DS
);parameter:
Tj
gs
ASW65R031EFD
5
Test Circuits
Table 8
Diode characteristics
Table 9
Switching times
Table10
Unclamped inductive load
ASW65R031EFD
6
Package Outlines
Figure
：
Outline PG‐TO247
(HT)
ASW65R031EFD
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
2022-12-13
