ANHI-ASW65R041E
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ASW65R041E
MOSFET Silicon N-Channel MOS
1.
Applications
For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and
full bridge topologies.
Such as phase-shift-bridge(ZVS),LLC Application-Server Power,
Telecom Power, EV Charging, Solar inverter.
2.
Features
Low drain-source on-resistance: RDS(ON) = 0.034Ω (typ.)
Easy to control Gate switching
Enhancement mode: Vth = 2.8 to 4.2 V
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
Unit
700
V
41
m
Ω
nC
A
133.5
240
I
D,pulse
3.
Packaging and Internal Circuit
Part Name
Package
Marking
ASW65R041E
TO247
ASW65R041E
TO247
ASW65R041E
1 Maximum
ratings
at
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Continuous drain current
1)
Pulsed drain current
2)
I
D
A
–
–
80
T
C
=25°C
T
C
=25°C
–
–
240
A
I
D,pulse
Tc=25℃, V
DD
=50V, ID=12A,
L=10mH,RG=25Ω
Avalanche energy, single pulse
Avalanche current, single pulse
–
–
720
12
mJ
E
AS
I
AR
Tc=25℃, V
DD
=50V, L=10mH,
RG=25Ω
–
A
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
–
–
–
–
–
–
4.7
V/ns
V
DS
=0…150V
-20
-30
–
20
V
static;
30
V
AC (f>1 Hz)
T
C
=25°C
481
150
150
W
°C
°C
Storage temperature
-55
-55
Operating junction temperature
V
DS
=0…400V,
I
SD
<=
I
S
,
T
j
=25°C
see table 8
Reverse diode dv/dt
3)
dv/dt
–
–
15
V/ns
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
ASW65R041E
2
Thermal characteristics
Table 3
Thermal characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
0.26
62
Thermal resistance, junction – case
Thermal resistance, junction – ambient
–
–
–
–
°C/W
–
R
thJC
R
thJA
°C/W device
on PCB, minimal footprint
ASW65R041E
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
655
2.8
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
V
V
GS
=0V,
I
D
=10mA
V
(BR)DSS
V
(GS)th
V
DS
=
V
GS
,
I
D
=250uA
4.2
–
–
V
DS
=650V,
V
GS
=0V,
T
j
=25°C
uA
nA
1
Zero gate voltage drain current
Gate-source leakage current
I
DSS
I
GSS
–
100
V
GS
=30V,
V
DS
=0V
–
–
0.034 0.041
V
GS
=10V,
I
D
=28A,
T
j
=25°C
f
=1MHz, open drain
R
DS(on)
R
G
Ω
Ω
Drain-source on-state resistance
Gate resistance (Intrinsic)
13
–
Table 5
Dynamic characteristics
Values
Typ.
5966
464
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Input capacitance
–
–
–
–
–
–
pF
pF
pF
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1M Hz
V
GS
=0V,
V
DS
=50V,
f
=1M Hz
C
iss
C
oss
C
rss
Output capacitance
Reverse transfer capacitance
53
V
GS
=13V,
V
DD
=400V,
R
G
=1.7
Ω;
see table 9
V
GS
=13V,
I
D
=49.6A
I
D
=49.6A
I
D
=49.6A
I
D
=49.6A
Turn-on delay time
Rise time
–
–
–
–
50.4
46.8
326
48
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
V
DD
=400V,
R
G
=1.7
Ω;
see table 9
V
GS
=13V,
V
DD
=400V,
R
G
=1.7
Ω;
see table 9
V
GS
=13V,
Turn-off delay time
Fall time
V
DD
=400V,
R
G
=1.7
Ω;
see table 9
Table 6
Gate charge characteristics
Values
Typ.
38.6
60
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
V
DD
=400V,
I
D
=49.6A,
V
GS
=10V
V
DD
=400V,
I
D
=49.6A,
V
GS
=10V
V
DD
=400V,
I
D
=49.6A,
V
GS
=10V
V
DD
=400V,
I
D
=49.6A,
V
GS
=10V
Gate to source charge
Gate to drain charge
Gate charge total
–
–
–
–
–
–
–
–
nC
nC
nC
V
Q
gs
Q
gd
Q
g
133.5
7.0
Gate plateau voltage
V
plateau
ASW65R041E
Table 7
Reverse diode characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Diode forward voltage
Reverse recovery time
–
0.65
–
V
V
GS
=0V,
I
F
=1A,
T
j
=25°C
V
SD
t
rr
Vr=400V,IF=50A,di/dt=100A/us
see table 8
–
–
–
560.6
13.84
44
–
–
–
ns
Vr=400V,IF=50A,di/dt=100A/us
see table 8
Reverse recovery charge
uC
A
Q
rr
I
rrm
Vr=400V,IF=50A,di/dt=100A/us
see table 8
Peak reverse recovery current
ASW65R041E
4
Electrical characteristics diagram
Diagram 1: Typ. output characteristics
Diagram 2: Typ. Coss stored energy
48
40
32
24
16
8
35
30
25
20
15
10
10V
9V
8V
7V
6V
5
V
GS
=5V
0
0
0
100
200
300
400
500
0
5
10
15
V
DS
, Drain‐source voltage
(V)
Vds(V)
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
Eoss=f(VDS)
Diagram 3: Typ. transfer characteristics
Diagram 4: Typ. gate charge
140
10
9
120
100
80
60
40
20
0
400V
8
7
25C
6
125C
5
4
3
2
1
0
0
50
100
150
200
250
300
0
2
4
6
8
10 12
14 16
18 20
Qg(nC)
V
GS
, Gate‐source
voltage (V)
I
D
=f(
V
GS
);parameter:
T
j
V
GS
=f(
Q
gate
);
I
D
=49.6A pulsed; parameter:
V
DD
ASW65R041E
Diagram 5: Drain-source breakdown voltage
Diagram 6: Typ. capacitances
850
10000
800
750
700
650
ciss
coss
crss
1000
100
10
1
0
20
40
60
80
100
-60 -40 -20
0
20
40
60
80 100
120 140 160
VDS (V)
Tj, Junction temperature (
℃
)
V
BR(DSS)
=f(
T
j
);
I
D
=10mA
C
=f(
V
DS
);
V
GS
=0V;
f
=10 kHz
Diagram 7: Safe operating area T
C
=25 °C
，
TO247
I
D
=f(V
DS
); T
C
=25 °C; V
GS
> 7V; D=0; parameter tp
ASW65R041E
5
Test Circuits
Table 8
Diode characteristics
Table 9
Switching times
Table 10
Unclamped inductive load
ASW65R041E
6
Package Outlines
Figure1
：
Outline PG-TO247
ASW65R041E
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
1.1
2020-08-03
2021-10-20
Updated EAS/IAR
