ANHI-ASW65R072EFDA
| Part # | ANHI-ASW65R072EFDA |
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ASW65R072EFDA
MOSFET Silicon N-Channel MOS
1. Applications
Soft Switching Boost PFC switch, Half bridge or Asymmetric half bridge or
Series resonance half bridge and full bridge topologies.
Such as phase-shift-bridge(ZVS),LLC Application-Server Power,
Telecom Power, EV Charging, Solar inverter.
2. Features
Low drain-source on-resistance: RDS(ON) = 0.060
Ω (typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 5 V
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
700
72
Unit
V
m
Ω
nC
A
93.87
162
I
D,pulse
Body diode dv/dt
50
V/ns
3. Packaging
and Internal Circuit
Part Name
Package
Marking
ASW65R072EFDA
TO247
ASW65R072EFDA
TO247
ASW65R072EFDA
1
Maximum ratings
at
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Continuous drain current
1)
Pulsed drain current
2)
I
D
A
–
–
54
T
C
=25°C
T
C
=25°C
I
D,pulse
–
–
162
A
Tc=25℃, V
DD
=50V, L=10mH,
RG=25Ω
Avalanche energy, single pulse
E
AS
–
793
mJ
V
DS
=0…400V
static;
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
–
–
–
–
–
–
36
V/ns
V
-20
-30
–
20
30
V
AC (f>1 Hz)
T
C
=25°C
172
150
150
W
Storage temperature
-55
-55
°C
°C
Operating junction temperature
V
R
=400V,
I
F
=25 A, d
i
F
/d
t
=100A/µs;
see table 8
Reverse diode dv/dt
3)
dv/dt
–
–
50
V/s
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
ASW65R072EFDA
2
Thermal characteristics
Table 3
Thermal characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
0.73
62
Thermal resistance, junction – case
Thermal resistance, junction – ambient
R
thJC
R
thJA
–
–
–
–
°C/W
–
°C/W device
on PCB, minimal footprint
ASW65R072EFDA
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
655
3
Max.
V
GS
=0V,
I
D
=250uA
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
I
DSS
I
GSS
–
V
V
V
DS
=
V
GS
,
I
D
=250uA
5
V
DS
=650V,
V
GS
=0V,
T
j
=25°C
uA
nA
Ω
–
–
–
–
–
Zero gate voltage drain current
Gate-source leakage current
2
V
GS
=30V,
V
DS
=0V
100
0.060 0.072
V
GS
=10V,
I
D
=14A,
T
j
=25°C
R
DS(on)
R
G
Drain-source on-state resistance
Gate resistance
Ω
–
1
–
f
=1MHz, open drain
Table 5
Dynamic characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
Input capacitance
C
iss
C
oss
C
rss
–
–
4528
414.3
3.08
–
–
pF
pF
pF
Output capacitance
Reverse transfer capacitance
V
GS
=13V,
R
G
=5.3
Ω
;
see table 9
V
DD
=400V,
I
D
=17.1A,
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
21.6
10.7
86.6
8.6
–
–
–
–
ns
ns
ns
ns
V
GS
=13V,
V
DD
=400V,
R
G
=5.3
Ω
;
see table 9
I
D
=17.1A,
V
GS
=13V,
V
DD
=400V,
R
G
=5.3
Ω
;
see table 9
V
GS
=13V,
I
D
=17.1A,
Turn-off delay time
Fall time
V
DD
=400V,
R
G
=5.3
Ω
;
see table 9
I
D
=17.1A,
Table 6
Gate charge characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
V
DD
=400V,
I
D
=17.1A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=17.1A,
V
GS
=0 to 10V
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
24.79
34.94
93.87
6.01
–
–
–
–
nC
nC
nC
V
Q
gd
V
DD
=400V,
I
D
=17.1A,
V
GS
=0 to 10V
V
DD
=400V,
I
D
=17.1A,
V
GS
=0 to 10V
Q
g
Gate plateau voltage
V
plateau
ASW65R072EFDA
Table 7
Reverse diode characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
0.64
–
V
V
GS
=0V,
I
F
=1A,
T
j
=25°C
V
R
=400V,
I
F
=33A, d
i
F
/d
t
=60A/µs;
see table 8
–
–
–
224.4
1.09
8.89
–
–
–
ns
V
R
=400V,
I
F
=33A, d
i
F
/d
t
=60A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
uC
V
R
=400V,
I
F
=33A, d
i
F
/d
t
=60A/µs;
see table 8
Peak reverse recovery current
A
ASW65R072EFDA
4
Electrical characteristics diagram
Diagram 1: Typ. Output characteristics
Diagram 2: Typ. Drain Current De-rating
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
Id
=f(
T
C
);
Diagram 3: Typ. Rdson vs. Drain Current
Diagram 4: Typ. Rdson
–
Junction Temperature
R
ds(on)
=f(
Id
);Vgs=10V
R
ds(on)
=f(
T
j
);Vgs=10V/
I
D
=14A
Diagram 5: Typ. transfer characteristics
Diagram 6: Typ. Capacitance vs. Vds
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
C
=f(
V
DS
);
V
GS
=0V;
f
=1MHz
ASW65R072EFDA
Diagram 7: Typ. BVDSS voltage vs. Temperature
Diagram 8: Typ. Source-Drain Diode Forward
V
GS
=f(
Tj
);
I
D
=250uA
I
SD
=f(V
DS
); T
C
=25 °C;
Diagram 9: Typ. Gate charge
Diagram 10: Typ. Maximum Safe Operating Area
V
GS
=f(
Q
gate
);
I
D
=17.1A pulsed; parameter:
V
DD
I
D
=f(V
DS
); T
C
=25 °C; V
GS
> 7V; D=0; parameter tp
Diagram 11: Typ. Power Dissipation
Diagram 12: Normalized Transient Impedance
P
tot
)
=f(
T
C
);
ASW65R072EFDA
5
Test Circuits
Table 8
Diode characteristics
Table 9
Switching times
Table 10
Unclamped inductive load
ASW65R072EFDA
6
Package Outlines
Figure
：
Outline PG‐TO247
(HT)
ASW65R072EFDA
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
2023-07-25
