ANHI-AUB045N10BT
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AUB045N10BT
MOSFET Silicon N-Channel MOS
1. Applications
Synchronous rectification in SMPS,
Hard switching and High speed circuit
DC/DC in telecoms and industrial
2. Features
Low drain-source on-resistance: RDS(on)=4.1
mΩ (typ.)
High speed power switching
Enhanced body diode dv/dt capability
Enhanced avalanche ruggedness
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
100
4.5
Unit
V
m
Ω
nC
A
97.3
486
I
D,pulse
3. Packaging
and Internal Circuit
Part Name
Package
Marking
AUB045N10BT
TO263
AUB045N10BT
TO263
AUB045N10BT
1
Maximum ratings
At
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Parameter
Values
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
Continuous drain current at sikicon
1)
I
D
A
–
–
176
123
112
486
441
T
C
=25°C
T
C
=25°C
T
C
=100°C
Continuous drain current at package
1)
I
D
A
Continuous drain current at silicon
1)
I
D
A
Pulsed drain current
2)
I
D,pulse
–
–
A
T
C
=25°C
Tc=25
℃
,VDD=50V,Vgs=10V,
L=0.5mH,
RG=25Ω
Tc=25
℃
, VDD=50V, L=0.5mH,
RG=25Ω
Avalanche energy, single pulse
E
AS
–
–
–
–
mJ
Avalanche current, single pulse
I
AR
–
42
A
V
Gate source voltage (static)
Power dissipation
V
GS
P
tot
-20
–
20
static;
229
W
T
C
=25°C
Storage temperature
T
stg
T
j
-55
-55
–
–
150
150
°C
°C
Operating junction temperature
Soldering Temperature
T
L
260
°C
Distance of 1.6mm from case for 10s
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
AUB045N10BT
2
Thermal characteristics
Table
Thermal characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
0.54
62
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W
–
Thermal resistance, junction
– ambient
R
thJA
°C/W device
on PCB, minimal footprint
AUB045N10BT
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
100
2.5
–
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,
I
D
=250
u
A
V
DS
=
V
GS
,
I
D
=250uA
2.9
–
4.5
V
DS
=100V,
V
GS
=0V,
T
j
=25°C
uA
1
Zero gate voltage drain current
Gate-source leakage current
I
DSS
I
GSS
V
GS
=+/-20V,
V
DS
=0V
–
–
–
+/-100
nA
4.1
4.5
–
V
GS
=10V,
I
D
=20A,
T
j
=25°C
mΩ
Ω
R
DS(on)
R
G
Drain-source on-state resistance
Gate resistance (Intrinsic)
Transconductance
–
1.6
f
=1MHz, open drain
V
DS
=
5V
,
I
D
=50A
S
Gfs
93.2
Table 5
Dynamic characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
C
oss
C
rss
–
–
–
5763
–
–
–
PF
PF
PF
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
Input capacitance
Output capacitance
485.1
22.4
Reverse transfer capacitance
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
DD
=50V,
R
G
=3
Ω
I
D
=50A,
I
D
=50A,
I
D
=50A,
I
D
=50A,
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
16.6
74
–
–
–
–
ns
ns
ns
ns
V
DD
=50V,
R
G
=3
Ω
V
DD
=50V,
R
G
=3
Ω
Turn-off delay time
Fall time
51
V
DD
=50V,
R
G
=3
Ω
53
Table 6
Gate charge characteristics
Values
Typ.
20.9
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Q
gs
Q
gd
Q
g
V
DD
=50V,
I
D
=20A,
V
GS
=10V
V
DD
=50V,
I
D
=20A,
V
GS
=10V
V
DD
=50V,
I
D
=20A,
V
GS
=10V
Gate to source charge
Gate to drain charge
Gate charge total
–
–
–
–
–
–
nC
nC
nC
29.1
97.3
AUB045N10BT
Table 7
Reverse diode characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
176
1.2
I
SD
–
–
–
–
A
V
Maximum Ratings
Continuous Source Current at silicon
Diode forward voltage
V
SD
V
GS
=0V,
I
s
=1A,
T
j
=25°C
Vgs=0V
,
I
F
=50A, d
i
F
/d
t
=100A/µs
Reverse recovery time
t
rr
–
–
–
79
–
–
–
ns
nC
A
Vgs=0V
,
I
F
=50A, d
i
F
/d
t
=100A/µs
Vgs=0V
,
I
F
=50A, d
i
F
/d
t
=100A/µs
Reverse recovery charge
Peak Reverse Recovery Current
Q
rr
I
rrm
141
3.01
AUB045N10BT
4
Electrical characteristics diagram
Diagram 1: Typ. Output characteristics
Diagram 2: Typ. Transfer characteristics
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
I
D
=f(
V
GS
);parameter:
T
j
Diagram 3: Typ. Rdson vs. Drain Current
Diagram 4: Typ. Rdson
–
Junction Temperature
R
ds(on)
=f(
T
j
);Vgs=10V/
I
D
=50A
R
ds(on)
=f(
Id
);Vgs=10V
Diagram 5: Typ. Body-Diode Characteristics
Diagram 6: Typ. Capacitance vs. Vds
VDS Drain to source voltage(V)
10000
1000
100
f = 1MHz
10
0
20
40
60
80
100
I
F
=f(
V
DS
);parameter:
Tj
C
=f(
V
DS
);
V
GS
=0V;
f
=1MHz
AUB045N10BT
Diagram 7: Typ. Power Dissipation
Diagram 8: Typ. Drain
Current De-rating
P
tot
)
=f(
T
C
);
Id
=f(
T
C
);
Diagram 9: Typ. Gate charge
Diagram 10: Typ. Maximum Safe Operating Area
V
GS
=f(
Q
gate
);
I
D
=20A pulsed; parameter:
V
DD
I
D
=f(V
DS
); T
C
=25 °C; V
GS
> 7V; D=0; parameter tp
Figure 11 Normalized Maximum Transient Thermal Impedance
AUB045N10BT
5. Package
Outlines
Figure1
：
Outline
PG‐TO263
(HC&LM)
AUB045N10BT
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
2023-05-12
