ANHI-AUB060N08AG

Part #ANHI-AUB060N08AG
Download 
ANHI-AUB060N08AG
AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
MOSFET Silicon N-Channel MOS  
1. Applications  
Synchronous rectification in SMPS,  
Hard switching and High speed circuit  
DC/DC in telecoms and inductrial  
2. Features  
Low drain-source on-resistance: RDS(ON) = 5.6mΩ (typ.)  
High speed power switching  
Enhanced body diode dv/dt capability  
Enhanced avalanche ruggedness  
Table 1
 
Key Performance Parameters  
Parameter  
V

DS

@ T

j,max  

R

DS(on),max  

Q

g,typ  

Value  
Unit  
80  
V
6.0  
m
Ω
55.7  
240  
nC  
A
I

D,pulse  

3. Packaging
 
and Internal Circuit  
Part Name  
Package  
TO220F  
TO263  
Marking  
AUA060N08AG  
AUB060N08AG  
AUP060N08AG  
AUN060N08AG  
AUD060N08AG  
AUA060N08AG  
AUB060N08AG  
AUP060N08AG  
AUN060N08AG  
AUD060N08AG  
TO220  
DFN5x6  
TO252  
TO220F  
TO263  
TO220  
TO252  
DFN5x6  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
1
Maximum ratings  
At
T
j
= 25°C, unless otherwise specified  
Table 2
 
Maximum ratings  
Values  
Typ.  
–
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
Max.  
60  
Continuous drain current

1)  

Pulsed drain current

2)  

I

D  

A
T

C

=25°C  
T

C

=25°C  
I

D,pulse  

E

AS  

V

GS  

P

tot  

–
240  
300  
20  
A
Avalanche energy, single pulse  
Gate source voltage (static)  
Power dissipation (TO220F)  
–
–
–
–
mJ  
V
-20  
–
static;  
T

C

=25°C  
30  
W
Power dissipation  
(TO263&TO220&TO252)  
P

tot  

–
–
150  
W
T

C

=25°C  
T

C

=25°C  
Power dissipation (DFN5x6)  
Storage temperature  
P

tot  

T

stg  

T

j  

–
–
–
–
74  
W
-55  
-55  
175  
175  
°C  
°C  
Operating junction temperature  

1)

Limited by T

j,max

. Maximum Duty Cycle D = 0.50  

2)

Pulse width t

p

limited by T

j,max  

3)

Identical low side and high side switch with identical R
G  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
2
Thermal characteristics  
Table 3
 
Thermal characteristics(TO220F)  
Values  
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
Typ.  
Max.  
5
Thermal resistance, junction
 
– case  
R

thJC  

–
–
–
–
°C/W –  
Thermal resistance, junction
 
– ambient
 
R

thJA  

60  
°C/W device
 
on PCB, minimal footprint  
Table  
Thermal characteristics(TO263&TO220&TO252)  
Values  
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
Typ.  
Max.  
1
Thermal resistance, junction
 
– case  
R

thJC  

–
–
–
–
°C/W –  
Thermal resistance, junction
 
– ambient
 
R

thJA  

62  
°C/W device
 
on PCB, minimal footprint  
Table  
Thermal characteristics(DFN5x6)  
Values  
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
Typ.  
Max.  
1.7  
Thermal resistance, junction
 
– case  
R

thJC  

–
–
–
–
°C/W –  
Thermal resistance, junction
 
– ambient
 
R

thJA  

50  
°C/W device
 
on PCB, minimal footprint  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
3
Electrical characteristics  
at
T
j
=25°C, unless otherwise specified  
Table 4
 
Static characteristics  
Values  
Typ.  
–
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
80  
2.5  
–
Max.  
–
V

(BR)DSS  

V

(GS)th  

V
V
V

GS

=0V,
I

D

=10mA  
Drain-source breakdown voltage  
Gate threshold voltage  
V

DS

=
V

GS

,
I

D

=250uA  
V

DS

=80V,
V

GS

=0V,
T

j

=25°C  
3.4  
–
nA  
nA  
1000  
100  
6.0  
Zero gate voltage drain current  
Gate-source leakage current  
I

DSS  

I

GSS  

V

GS

=20V,
V

DS

=0V  
–
–
–
V

GS

=10V,
I

D

=20A,
T

j

=25°C  
5.4  
mΩ  
Ω
R

DS(on)  

R

G  

Drain-source on-state resistance  
Gate resistance (Intrinsic)  
–
1.2  
–
f
=1MHz, open drain  
Table 5
 
Dynamic characteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
Max.  
C

iss  

C

oss  

C

rss  

–
3730  
–
pF  
pF  
pF  
Vds=40V,Vgs=0V  
f=1MHz  
Input capacitance  
Vds=40V,Vgs=0V  
f=1MHz  
Output capacitance  
–
–
674  
–
–
Vds=40V,Vgs=0V  
f=1MHz  
Reverse transfer capacitance  
24.24  
VDD=40V,VGS=10V,RG=10  
Ω
Ω
Ω
Ω
Turn-on delay time  
Rise time  
t

d(on)  

t

r  

t

d(off)  

t

f  

–
–
–
–
16.5  
13.7  
35.9  
–
–
–
–
ns  
ns  
ns  
ns  
ID=20A  
VDD=40V,VGS=10V,RG=10  
ID=20A  
VDD=40V,VGS=10V,RG=10  
ID=20A  
Turn-off delay time  
Fall time  
VDD=40V,VGS=10V,RG=10  
ID=20A  
13.45  
Table 6
 
Gate charge characteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
Max.  
Gate to source charge  
Q

gs  

–
15.9  
–
nC  
nC  
nC  
VDS=40V,VGS=0 to 10V  
ID=20A  
Gate to drain charge  
Gate charge total  
Q

gd  

Q

g  

–
–
13.3  
55.7  
–
–
VDS=40V,VGS=0 to 10V  
ID=20A  
VDS=40V,VGS=0 to 10V  
ID=20A  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
Table 7
 
Reverse diode characteristics  
Values  
Parameter  
Symbol  
Unit Note
 
/ Test Condition  
Min.  
Typ.  
Max.  
V

SD  

t

rr  

–
0.7  
–
V
V

GS

=0V,
I

F

=1A,
T

j

=25°C  
Diode forward voltage  
Reverse recovery time  
–
–
–
40.9  
106.8  
-3.7  
–
–
–
ns  
VR=40V,IF=20A, diF/dt=200A/us  
Reverse recovery charge  
Q

rr  

I

rrm  

uC  
A
VR=40V,IF=20A,diF/dt=200A/us  
VR=40V,IF=20A,diF/dt=200A/us  
Peak reverse recovery current  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
4
Package Outlines  
Figure1
:
Outline PG-TO220F  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
Figure2
:
Outline PG-TO263  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
Figure3
:
Outline PG-TO220  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
Figure4
:
OutlinePG-TO252  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
Figure5
:
Outline PG-DFN5x6  

AUA060N08AG, AUB060N08AG, AUP060N08AG,  
AUN060N08AG, AUD060N08AG  
Revision History  
Revision
Date  
Subjects (major changes since last revision)  
Preliminary version  
1.0  
1.1  
2021-01-21  
2021-02-04  
Add package for TO263&TO220&DFN5x6&TO252