ANHI-AUD060N055

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

MOSFET Silicon N-Channel MOS  

1. Applications  

Single-ended flyback or two-transistor forward topologies.  

PC power, PD Adaptor, LCD & PDP TV and LED lighting.  

2. Features  

Low drain-source on-resistance:  

TO252 RDS(ON) = 4m

Ω

(typ.)  

DFN5X6 RDS(ON) = 3.6m

Ω

(typ.)  

TO263&TO220 RDS(ON) = 4.3m

Ω

(typ.)  

Easy to control Gate switching  

Enhancement mode: Vth = 2.5 to 4.5 V  

Table 1

 

Key Performance Parameters  

Parameter  

V

DS

@ T

j,max  

R

DS(on),max TO252  

R

DS(on),max DFN5X6  

R

DS(on),max TO263&TO220  

Q

g,typ  

Value  

Unit  

55  

V

6.0  

m

Ω

 

m

Ω  

m

Ω  

nC  

A

4.2  

6.

0  

53.5  

280  

I

D,pulse  

.

3

.

 

P

ackaging and Internal Circuit  

Part Name  

AUD

060

N055  

AUN042N055  

AUB050N055  

AUP0

6

0N055  

Package  

Marking  

TO252  

DFN5X6  

TO263  

TO220  

AUD0

60

N055  

AUN042N055  

AUB050N055  

AUP0

6

0N055  

TO263  

TO220  

TO252  

DFN5x6  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

1

Maximum ratings  

at

T

j

= 25°C, unless otherwise specified  

Table 2

 

Maximum ratings  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

125  

Continuous drain current

1)  

Pulsed drain current

2)  

I

D  

A

–

–

–

T

C

=25°C  

T

C

=25°C  

I

D,pulse  

E

AS  

–

–

280  

A

Tc=25

℃

,VDD=50V, Id=36.4A,  

L=0.5mH,

RG=25Ω  

Avalanche energy, single pulse  

331  

mJ  

I

AR  

Tc=25

℃

,VDD=50V, L=0.5mH,  

Avalanche current, single pulse  

–

–

36.4  

A

RG=25Ω  

V

GS  

P

tot  

P

tot  

T

stg  

T

j  

Gate source voltage (static)  

Power dissipation(TO220,263,T252)  

Power dissipation (DFN5x6)  

Storage temperature  

-20  

–

–

–

–

–

–

20  

V

static;  

T

C

=25°C  

T

C

=25°C  

120  

74  

W

W

°C  

°C  

–

-55  

-55  

150  

150  

Operating junction temperature  

Soldering Temperature  

T

L  

260  

–

°C  

S

Distance of 1.6mm from case for 10s  

VDS=5V IDS=20A  

Transconductance  

GFS  

–

71  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

2

Thermal characteristics  

Thermal characteristics(TO252,TO263,TO220)  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

1

Thermal resistance, junction

 

– case  

Thermal resistance, junction

 

– ambient  

R

thJC  

R

thJA  

–

–

–

–

°C/W –  

62  

°C/W device

 

on PCB, minimal footprint  

Thermal characteristics(DFN5X6)  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

1.3  

R

thJC  

Thermal resistance, junction

 

– case  

–

–

–

–

°C/W –  

Thermal resistance, junction

 

– ambient

 

R

thJA  

50  

°C/W device

 

on PCB, minimal footprint  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

3

Electrical characteristics  

at

T

j

=25°C, unless otherwise specified  

Table 4

 

Static characteristics  

Values  

Typ.  

–

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

55  

2.5  

–

Max.  

–

V

(BR)DSS  

V

(GS)th  

V

V

V

GS

=0V,

I

D

=250uA  

Drain-source breakdown voltage  

Gate threshold voltage  

V

DS

=

V

GS

,

I

D

=250uA  

V

DS

=55V,

V

GS

=0V,

T

j

=25°C  

4.5  

–

uA  

1

I

DSS  

I

GSS  

R

DS(on)  

R

DS(on)  

Zero gate voltage drain current  

Gate-source leakage current  

V

GS

=20V,

V

DS

=0V  

–

–

–

100  

6.0  

nA  

V

GS

=10V,

I

D

=20A,

T

j

=25°C(TO252)  

4

m

Ω

 

Drain-source on-state resistance  

Drain-source on-state resistance  

V

GS

=10V,

I

D

=20A,  

T

j

=25°C(DFN5X6)  

–

–

–

3.6  

4.3  

1.2  

4.2  

6.0  

–

m

Ω  

m

Ω  

Ω

V

GS

=10V,

I

D

=20A,  

T

j

=25°C(TO263&TO220)  

R

DS(on)  

R

G  

Drain-source on-state resistance  

Gate resistance (Intrinsic)  

f

=1MHz, open drain  

Table 5

 

Dynamic characteristics  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

C

iss  

C

oss  

C

rss  

–

–

–

3803  

–

–

–

pF  

pF  

pF  

V

GS

=0V,

V

DS

=25V,

f

=1MHz  

V

GS

=0V,

V

DS

=25V,

f

=1MHz  

V

GS

=0V,

V

DS

=25V,

f

=1MHz  

Input capacitance  

Output capacitance  

1416  

Reverse transfer capacitance  

124.3  

V

GS

=10V,  

V

GS

=10V,  

V

GS

=10V,  

V

GS

=10V,  

V

DD

=30V,  

R

G

=2.5

Ω

 

I

D

=2A,  

I

D

=2A,  

I

D

=2A,  

I

D

=2A,  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

21  

9

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=30V,  

R

G

=2.5

Ω  

V

DD

=30V,  

R

G

=2.5

Ω  

Turn-off delay time  

Fall time  

42  

78  

V

DD

=30V,  

R

G

=2.5

Ω  

Table 6

 

Gate charge characteristics  

Values  

Typ.  

16.5  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Q

gs  

Q

gd  

Q

g  

V

DD

=30V,

I

D

=30A,

V

GS

=0 to 10V  

V

DD

=30V,

I

D

=30A,

V

GS

=0 to 10V  

V

DD

=30V,

I

D

=30A,

V

GS

=0 to 10V  

Gate to source charge  

Gate to drain charge  

Gate charge total  

–

–

–

–

–

–

nC  

nC  

nC  

12.6  

53.5  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

Table 7

 

Reverse diode characteristics  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

V

SD  

t

rr  

V

GS

=0V,

I

F

=1A,

T

j

=25°C  

Diode forward voltage  

Reverse recovery time  

–

0.7  

–

V

V

R

=40V,

I

F

=75A, d

i

F

/d

t

=100A/µs  

–

–

–

49  

52  

1.5  

–

–

–

ns  

V

R

=40V,

I

F

=75A, d

i

F

/d

t

=100A/µs  

V

R

=40V,

I

F

=75A, d

i

F

/d

t

=100A/µs  

Reverse recovery charge  

Q

rr  

I

rrm  

n

C  

Peak reverse recovery current  

A

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

4

Electrical characteristics diagram  

Diagram 1: Typ. output characteristics  

Diagram 2: Typ. transfer characteristics  

Diagram 3: Typ. Rdson vs. Drain Current  

Diagram 4: Typ. Rdson

–

Junction Temperature  

Diagram 5: Typ. Body-Diode Characteristics  

Diagram 6: Typ. Capacitance vs. Vds  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

Diagram 7: Typ. Power Dissipation  

Diagram 8: Typ. Drain

 

Current De-rating  

Diagram 9: Typ. Gate charge  

Diagram 10: Typ. Maximum Safe Operating Area  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

5

Test Circuits  

Table 8

 

Diode characteristics  

Table 9

 

Switching times  

Table 10

 

Unclamped inductive load  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

6

Package Outlines  

Figure1

：

Outline PG‐TO2

52(HT)  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

单位 mm  

Nom  

4.50  

Symbol  

min  

max  

4.70  

1.40  

2.82  

1.00  

1.40  

0.60  

2.64  

10.20  

8.90  

15.90  

9.40  

1.50  

1.90  

13.70  

3.20  

3.00  

3.88  

A

A1  

A2  

b

b1  

c

e

E

E1  

H

H1  

H2  

H3  

H4  

H5  

G

4.30  

1.20  

2.20  

0.60  

1.20  

0.40  

2.44  

9.80  

8.50  

15.40  

9.00  

1.10  

1.50  

12.90  

2.80  

2.60  

3.40  

1.30  

2.50  

0.80  

1.30  

0.50  

2.54  

10.00  

8.70  

15.70  

9.20  

1.34  

1.70  

13.30  

3.00  

2.80  

ΦP  

3.60  

Figure2

：

Outline PG‐TO2

20(HT&CD)  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

Figure3

：

Outline PG

‐TO2

63(HC)  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

Figure4

：

Outline PG‐

DFN5X6(HC)  

AUD0

60

N055,AUN042N055,AUB050N055,AUP0

6

0N055  

Revision History  

Revision

Date  

Subjects (major changes since last revision)  

Preliminary version  

1.0  

1.1  

1.2  

2021-10-25  

2021-11-30  

2022-09-13  

Updated Qrr and EAS. Added electrical characteristics diagram  

Updated Vth limit