ANHI-AUD069N10A
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AUD069N10A
MOSFET Silicon N-Channel MOS
1. Applications
Synchronous rectification in SMPS,
Hard switching and High speed circuit
DC/DC in telecoms and industrial
2. Features
Low drain-source on-resistance:
TO220&TO220F RDS(on) = 5.6
mΩ (typ.)
TO263 RDS(on) = 5.8
mΩ (typ.)
TO252 RDS(on) = 5.9
mΩ (typ.)
High speed power switching
Enhanced body diode dv/dt capability
Enhanced avalanche ruggedness
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DS
@ T
j,max
100
V
TO220,220F R
DS(on),max
6.5
m
Ω
m
Ω
nC
A
TO263,252 R
DS(on),max
6.9
Q
g,typ
60.7
464
I
D,pulse
3. Packaging
and Internal Circuit
Part Name
AUP065N10A
AUA065N10A
AUB069N10A
AUD069N10A
Package
Marking
TO220
TO220F
TO263
TO252
AUP065N10A
AUA065N10A
AUB069N10A
AUD069N10A
TO220F
TO263
TO220
TO252
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
1
Maximum ratings
At
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Continuous drain current
1)
Continuous drain current
1)
I
D
A
116
91
T
C
=25°C
I
D
T
C
=100°C
A
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
464
186
A
T
C
=25°C
Tc=25
℃
,VDD=50V,Id=27.3A,
L=0.5mH,
RG=25Ω
Tc=25
℃
, VDD=50V, L=0.5mH,
RG=25Ω
Avalanche energy, single pulse
–
–
–
–
mJ
Avalanche current, single pulse
I
AR
–
27.3
20
A
V
Gate source voltage (static)
V
GS
P
tot
-20
–
static;
Power dissipation
(TO263&TO252&TO220)
161
W
T
C
=25°C
Power dissipation (TO220F)
P
tot
–
–
30
W
T
C
=25°C
Storage temperature
T
stg
T
j
-55
-55
–
–
150
150
°C
°C
Operating junction temperature
Soldering Temperature
T
L
260
°C
Distance of 1.6mm from case for 10s
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
2
Thermal characteristics
Table 3
Thermal characteristics(TO220F)
Values
Parameter
Symbol
Unit Note
/ Test Condition
°C/W
Min.
Typ.
Max.
5
Thermal resistance, junction
– case
R
thJC
–
–
–
–
–
Thermal resistance, junction
– ambient
R
thJA
60
°C/W device
on PCB, minimal footprint
Table 4
Thermal characteristics(TO220&TO263&TO252)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
1
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W
–
Thermal resistance, junction
– ambient
R
thJA
62
°C/W device
on PCB, minimal footprint
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
100
2.5
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,
I
D
=250
u
A
V
DS
=
V
GS
,
I
D
=250uA
V
DS
=95V,
V
GS
=0V,
T
j
=25°C
3.4
–
u
A
1
Zero gate voltage drain current
Gate-source leakage current
I
DSS
I
GSS
V
GS
=20V,
V
DS
=0V
–
–
–
100
6.5
nA
5.6
V
GS
=10V,
I
D
=20A,
T
j
=25°C
mΩ
R
DS(on)
R
DS(on)
R
DS(on)
Drain-source on-state resistance
TO220&TO220F
–
–
5.8
5.9
6.9
6.9
V
GS
=10V,
I
D
=20A,
T
j
=25°C
V
GS
=10V,
I
D
=20A,
T
j
=25°C
mΩ
Drain-source on-state resistance
TO263
mΩ
Ω
Drain-source on-state resistance
TO252
R
G
Gate resistance (Intrinsic)
–
–
1.5
52
–
–
f
=1MHz, open drain
VDS=5V IDS=20A
Transconductance
GFS
S
Table 5
Dynamic characteristics (by calculating)
Values
Typ.
3861
375
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
C
oss
C
rss
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
Input capacitance
–
–
–
–
–
–
pF
pF
pF
Output capacitance
Reverse transfer capacitance
15.1
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
DD
=50V,
R
G
=10
Ω
I
D
=20A,
I
D
=20A,
I
D
=20A,
I
D
=20A,
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
30
56
71
44
–
–
–
–
ns
ns
ns
ns
V
DD
=50V,
R
G
=10
Ω
V
DD
=50V,
R
G
=10
Ω
V
DD
=50V,
R
G
=10
Ω
Turn-off delay time
Fall time
Table 6
Gate charge characteristics(by calculating)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
16.1
18.3
63.5
Max.
Q
gs
Q
gd
Q
g
–
–
–
–
–
–
nC
nC
nC
V
DD
=50V,
I
D
=20A,
V
GS
=0 to 10V
V
DD
=50V,
I
D
=20A,
V
GS
=0 to 10V
V
DD
=50V,
I
D
=20A,
V
GS
=0 to 10V
Gate to source charge
Gate to drain charge
Gate charge total
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
Table 7
Reverse diode characteristics
(by calculating)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
V
SD
t
rr
–
0.7
–
V
V
GS
=0V,
I
F
=1A,
T
j
=25°C
Diode forward voltage
Reverse recovery time
V
R
=30V,
I
F
=20A, d
i
F
/d
t
=300A/µs
–
–
–
46
–
–
–
ns
V
R
=30V,
I
F
=20A, d
i
F
/d
t
=300A/µs
V
R
=30V,
I
F
=20A, d
i
F
/d
t
=300A/µs
Q
rr
I
rrm
Reverse recovery charge
220
8.6
n
C
Peak reverse recovery current
A
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
4
Electrical characteristics diagram
Diagram 1: Typ. output characteristics
Diagram 2: Typ. transfer characteristics
Diagram 3: Typ. Rdson vs. Drain Current
Diagram 4:
Rdson
–
Junction Temperature
Diagram 5: Typ. Body-Diode Characteristics
Diagram 6: Typ. Capacitance vs. Vds
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
Diagram 7: Typ. Power Dissipation
Diagram 8: Typ. Drain
Current De-rating
Diagram 9: Typ. Gate charge
Diagram 10: Typ. Maximum Safe Operating Area
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
5
Test Circuits
Table 8
Diode characteristics
Table 9
Switching times
Table 10
Unclamped inductive load
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
6
Package Outlines
Figure1
：
Outline
PG‐TO263
(HC)
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
Figure2
：
Outline
PG‐TO252(HT)
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
Figure3
：
Outline
PG‐TO220(HT)
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
Figure4
：
Outline
PG‐TO220F(HT)
AUP065N10A,AUA065N10A,AUB069N10A,AUD069N10A
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
1.1
1.2
2022-04-03
2022-04-18
2022-05-01
Added package for TO220,TO220F
Added electrical characteristics diagram
