ANHI-AUP023N06

AUP023N06  

MOSFET Silicon N-Channel MOS  

1. Applications  

Synchronous rectification in SMPS,  

Hard switching and High speed circuit  

DC/DC in telecoms and industrial  

2. Features  

Low drain-source on-resistance: RDS(on) = 1.9

mΩ (typ.)  

High speed power switching  

Enhanced body diode dv/dt capability  

Enhanced avalanche ruggedness  

Table 1

 

Key Performance Parameters  

Parameter  

V

DS

@ T

j,max  

R

DS(on),max  

Q

g,typ  

Value  

Unit  

60  

V

2.3  

m

Ω  

nC  

A

157.4  

870  

I

D,pulse  

3. Packaging

 

and Internal Circuit  

Part Name  

Package  

Marking  

AUP023N06  

TO220  

AUP023N06  

TO220  

AUP023N06  

1

Maximum ratings  

At

T

j

= 25°C, unless otherwise specified  

Table 2

 

Maximum ratings  

Parameter  

Values  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

Continuous drain current at silicon

1)  

I

D  

A

–

–

290  

255  

205  

870  

870  

T

C

=25°C  

T

C

=25°C  

T

C

=100°C  

Continuous drain current at package

1)

I

D  

A

Continuous drain current at silicon

1)  

I

D  

A

Pulsed drain current

2)  

I

D,pulse  

–

–

A

T

C

=25°C  

Tc=25

℃

,VDD=50V,Vgs=10V,  

L=0.5mH,

RG=25Ω  

Tc=25

℃

, VDD=50V, L=0.5mH,  

RG=25Ω  

Avalanche energy, single pulse  

E

AS  

–

–

–

–

mJ  

Avalanche current, single pulse  

I

AR  

–

59  

A

V

Gate source voltage (static)  

Power dissipation  

V

GS  

P

tot  

-20  

–

20  

static;  

310  

W

T

C

=25°C  

Storage temperature  

T

stg  

T

j  

-55  

-55  

–

–

175  

175  

°C  

°C  

Operating junction temperature  

Soldering Temperature  

T

L  

300  

°C  

Distance of 1.6mm from case for 10s  

AUP023N06  

2

Thermal characteristics  

Table  

Thermal characteristics  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

0.48  

60  

Thermal resistance, junction

 

– case  

R

thJC  

–

–

–

–

°C/W  

–

Thermal resistance, junction

 

– ambient

 

R

thJA  

°C/W device

 

on PCB, minimal footprint  

AUP023N06  

3

Electrical characteristics  

at

T

j

=25°C, unless otherwise specified  

Table 4

 

Static characteristics  

Values  

Typ.  

–

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

60  

2.5  

–

Max.  

–

Drain-source breakdown voltage  

Gate threshold voltage  

V

(BR)DSS  

V

(GS)th  

V

V

V

GS

=0V,

I

D

=250

u

A  

V

DS

=

V

GS

,

I

D

=250uA  

V

DS

=60V,

V

GS

=0V,

T

j

=25°C  

4.5  

–

u

A  

1

Zero gate voltage drain current  

Gate-source leakage current  

I

DSS  

I

GSS  

V

GS

=+/-20V,

V

DS

=0V  

–

–

–

+/-100

nA  

1.9  

2.3  

–

V

GS

=10V,

I

D

=20A,

T

j

=25°C  

mΩ  

Ω

R

DS(on)  

R

G  

Drain-source on-state resistance  

Gate resistance (Intrinsic)  

Transconductance  

–

2.2  

f

=1MHz, open drain  

V

DS

=

5V

,

I

D

=50A  

S

Gfs  

139.2  

Table 5

 

Dynamic characteristics  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

C

iss  

C

oss  

C

rss  

–

–

–

10843  

3631  

–

–

–

pF  

pF  

pF  

V

GS

=0V,

V

DS

=30V,

f

=1MHz  

V

GS

=0V,

V

DS

=30V,

f

=1MHz  

V

GS

=0V,

V

DS

=30V,

f

=1MHz  

Input capacitance  

Output capacitance  

Reverse transfer capacitance  

185.9  

V

GS

=10V,  

V

GS

=10V,  

V

GS

=10V,  

V

GS

=10V,  

V

DD

=30V,  

R

G

=2.5

Ω

 

I

D

=20A,  

I

D

=20A,  

I

D

=20A,  

I

D

=20A,  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on delay time  

Rise time  

–

–

–

–

21  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=30V,  

R

G

=2.5

Ω  

49  

V

DD

=30V,  

R

G

=2.5

Ω  

Turn-off delay time  

Fall time  

90.2  

58  

V

DD

=30V,  

R

G

=2.5

Ω  

Table 6

 

Gate charge characteristics  

Values  

Typ.  

42.9  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Q

gs  

Q

gd  

Q

g  

V

DD

=30V,

I

D

=20A,

V

GS

=10V  

V

DD

=30V,

I

D

=20A,

V

GS

=10V  

V

DD

=30V,

I

D

=20A,

V

GS

=10V  

Gate to source charge  

Gate to drain charge  

Gate charge total  

–

–

–

–

–

–

nC  

nC  

nC  

30.5  

157.4  

AUP023N06  

Table 7

 

Reverse diode characteristics  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

V

SD  

t

rr  

–

0.67  

1.2  

V

V

GS

=0V,

I

s

=1A,

T

j

=25°C  

Diode forward voltage  

Reverse recovery time  

Vgs=0V

,

I

F

=20A, d

i

F

/d

t

=100A/µs  

–

–

–

128.9  

252.9  

3.3  

–

–

–

ns  

Vgs=0V

,

I

F

=20A, d

i

F

/d

t

=100A/µs  

Vgs=0V

,

I

F

=20A, d

i

F

/d

t

=100A/µs  

Q

rr  

I

rrm  

Reverse recovery charge  

n

C  

Peak Reverse Recovery Current  

A

AUP023N06  

4

Electrical characteristics diagram  

Diagram 1: Typ. Output characteristics  

Diagram 2: Typ. Transfer characteristics  

I

D

=f(

V

DS

);

T

j

=25 °C; parameter:

V

GS  

I

D

=f(

V

GS

);parameter:

T

j  

Diagram 3: Typ. Rdson vs. Drain Current  

Diagram 4: Typ. Rdson

–

Junction Temperature  

R

ds(on)

=f(

T

j

);Vgs=10V/

I

D

=40A  

R

ds(on)

=f(

Id

);Vgs=10V  

Diagram 5: Typ. Body-Diode Characteristics  

Diagram 6: Typ. Capacitance vs. Vds  

I

F

=f(

V

DS

);parameter:

Tj  

C

=f(

V

DS

);

V

GS

=0V;

f

=1MHz  

AUP023N06  

Diagram 7: Typ. Power Dissipation  

Diagram 8: Typ. Drain

 

Current De-rating  

P

tot

)

=f(

T

C

);  

Id

=f(

T

C

);  

Diagram 9: Typ. Gate charge  

Diagram 10: Typ. Maximum Safe Operating Area  

V

GS

=f(

Q

gate

);

I

D

=20A pulsed; parameter:

V

DD  

I

D

=f(V

DS

); T

C

=25 °C; V

GS

> 7V; D=0; parameter tp  

Figure 11 Normalized Maximum Transient Thermal Impedance  

AUP023N06  

5. Package

 

Outlines  

Figure

：

Outline

PG‐TO2

20(LM)  

AUP023N06  

Revision History  

Revision

Date  

Subjects (major changes since last revision)  

Preliminary version  

1.0  

2023-06-05