ANHI-AUP049N10
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AUP049N10,AUB049N10
MOSFET Silicon N-Channel MOS
1. Applications
Synchronous rectification in SMPS,
Hard switching and High speed circuit
DC/DC in telecoms and industrial
2. Features
Low drain-source on-resistance:
TO220 RDS(ON) = 4.3
mΩ (typ.)
TO263
RDS(ON) = 4.2mΩ (typ.)
High speed power switching
Enhanced body diode dv/dt capability
Enhanced avalanche ruggedness
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
100
4.9
Unit
V
m
Ω
nC
A
60.7
408
I
D,pulse
3. Packaging
and Internal Circuit
Part Name
AUP049N10
AUB049N10
Package
TO220
Marking
AUP049N10
AUB049N10
TO263
TO263
TO220
AUP049N10,AUB049N10
1
Maximum ratings
At
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Continuous drain current
1)
Continuous drain current
1)
I
D
A
136
101
408
282
T
C
=25°C
I
D
T
C
=100°C
A
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
A
T
C
=25°C
Tc=25
℃
,VDD=50V,Id=33.6A,
L=0.5Mh,
RG=25Ω
Avalanche energy, single pulse
–
–
mJ
Tc=25
℃
, VDD=50V, L=0.5Mh,
RG=25Ω
Avalanche current, single pulse
I
AR
–
33.6
A
Gate source voltage (static)
Power dissipation (TO263,TO220)
Storage temperature
V
GS
P
tot
T
stg
T
j
-20
–
–
–
–
–
20
V
static;
T
C
=25°C
161
150
150
W
°C
°C
-55
-55
Operating junction temperature
Soldering Temperature
T
L
260
°C
Distance of 1.6mm from case for 10s
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
AUP049N10,AUB049N10
2
Thermal characteristics
Table
Thermal characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
0.78
62
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W
–
Thermal resistance, junction
– ambient
R
thJA
°C/W device
on PCB, minimal footprint
AUP049N10,AUB049N10
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
100
2.5
–
Max.
–
V
GS
=0V,
I
D
=250Ua
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
DS
=
V
GS
,
I
D
=250Ua
4.5
V
DS
=100V,
V
GS
=0V,
T
j
=25°C
–
Ua
1
Zero gate voltage drain current
Gate-source leakage current
I
DSS
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
–
–
–
100
4.9
Na
4.3
V
GS
=10V,
I
D
=20A,
T
j
=25°C
mΩ
Drain-source on-state
resistance(TO220)
–
4.2
4.9
V
GS
=10V,
I
D
=20A,
T
j
=25°C
mΩ
Ω
R
DS(on)
Drain-source on-state
resistance(TO263)
R
G
Gate resistance (Intrinsic)
–
–
1.5
53
–
–
f
=1MHz, open drain
VDS=5V IDS=20A
Transconductance
GFS
S
Table 5
Dynamic characteristics(by calculating)
Values
Typ.
3864
379
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
C
oss
C
rss
–
–
–
–
–
–
Pf
Pf
Pf
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
V
GS
=0V,
V
DS
=50V,
f
=1MHz
Input capacitance
Output capacitance
Reverse transfer capacitance
15.3
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
GS
=10V,
V
DD
=50V,
R
G
=10
Ω
I
D
=20A,
I
D
=20A,
I
D
=20A,
I
D
=20A,
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
30.5
57
–
–
–
–
ns
ns
ns
ns
V
DD
=50V,
R
G
=10
Ω
V
DD
=50V,
R
G
=10
Ω
V
DD
=50V,
R
G
=10
Ω
Turn-off delay time
Fall time
72
45
Table 6
Gate charge characteristics(by calculating)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
16.2
18.5
63.7
Max.
Q
gs
Q
gd
Q
g
–
–
–
–
–
–
Nc
Nc
Nc
V
DD
=50V,
I
D
=20A,
V
GS
=0 to 10V
V
DD
=50V,
I
D
=20A,
V
GS
=0 to 10V
V
DD
=50V,
I
D
=20A,
V
GS
=0 to 10V
Gate to source charge
Gate to drain charge
Gate charge total
AUP049N10,AUB049N10
Table 7
Reverse diode characteristics (by calculating)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
V
SD
t
rr
–
0.7
–
V
V
GS
=0V,
I
F
=1A,
T
j
=25°C
Diode forward voltage
Reverse recovery time
V
R
=30V,
I
F
=20A, d
i
F
/d
t
=300A/µs
–
–
–
47
–
–
–
ns
V
R
=30V,
I
F
=20A, d
i
F
/d
t
=300A/µs
V
R
=30V,
I
F
=20A, d
i
F
/d
t
=300A/µs
Q
rr
I
rrm
Reverse recovery charge
221
8.8
N
A
c
Peak reverse recovery current
AUP049N10,AUB049N10
4
Electrical characteristics diagram
Diagram 1: Typ. Output characteristics
Diagram 2: Typ. Transfer characteristics
Diagram 3: Typ. Rdson vs. Drain Current
Diagram 4: Typ. Rdson
–
Junction Temperature
Diagram 5: Typ. Body-Diode Characteristics
Diagram 6: Typ. Capacitance vs. Vds
AUP049N10,AUB049N10
Diagram 7: Typ. Power Dissipation
Diagram 8: Typ. Drain
Current De-rating
Diagram 9: Typ. Gate charge
Diagram 10: Typ. Maximum Safe Operating Area
AUP049N10,AUB049N10
5
Test Circuits
Table 8
Diode characteristics
Table 9
Switching times
Table 10
Unclamped inductive load
AUP049N10,AUB049N10
6
Package Outlines
Figure-1
：
Outline
PG‐TO220(CD
&HT)
AUP049N10,AUB049N10
Figure-2
：
Outline
PG‐TO263(CD)
AUP049N10,AUB049N10
Revision History
Revision
Date
Subjects (major changes since last revision)
1.0
1.1
Preliminary version
2022-10-20
2022-11-21
Added TO263 package
