ANHI-AUP056N08BGL

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

MOSFET Silicon N-Channel MOS  

1. Applications  

Single-ended flyback or two-transistor forward topologies.  

PC power, PD Adaptor, LCD & PDP TV and LED lighting.  

2. Features  

Low drain-source on-resistance: RDS(ON) = 4.9m

Ω

(typ.)  

Easy to control Gate switching  

Enhancement mode: Vth = 1.2 to 2.5 V  

Table 1

 

Key Performance Parameters  

Parameter  

V

DS

@ T

j,max  

R

DS(on),max  

Q

g,typ  

Value  

Unit  

85  

V

5.6  

m

Ω

 

nC  

A

63.7  

250  

I

D,pulse  

3. Packaging

 

and Internal Circuit  

Part Name  

Package  

Marking  

AUP056N08BGL  

AUD056N08BGL  

AUN050N08BGL  

AUA056N08BGL  

AUB056N08BGL  

TO220  

AUP056N08BGL  

AUD056N08BGL  

AUN050N08BGL  

AUA056N08BGL  

AUB056N08BGL  

TO252  

DFN5X6  

TO220F  

TO263  

TO220F  

TO263  

TO220  

TO252  

DFN5x6  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

1

Maximum ratings  

at

T

j

= 25°C, unless otherwise specified  

Table 2

 

Maximum ratings  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

65  

Continuous drain current

1)  

Pulsed drain current

2)  

I

D  

A

–

–

–

T

C

=25°C  

T

C

=25°C  

I

D,pulse  

E

AS  

–

–

250  

319  

A

Tc=25

℃

,VDD=50V,Id=35.7A,  

L=0.5mH,

RG=25Ω  

Avalanche energy, single pulse  

mJ  

I

AR  

Tc=25

℃

,VDD=50V,L=0.5mH,  

Avalanche current, single pulse  

–

–

35.7  

A

RG=25Ω  

V

GS  

P

tot  

P

tot  

P

tot  

P

tot  

T

stg  

T

j  

Gate source voltage (static)  

Power dissipation (TO220)  

Power dissipation (TO252&TO263)  

Power dissipation (DFN5x6)  

Power dissipation (TO220F)  

Storage temperature  

-20  

–

–

–

–

–

–

–

20  

V

static;  

T

C

=25°C  

T

C

=25°C  

T

C

=25°C  

T

C

=25°C  

–

158  

135  

151  

30  

W

W

W

W

°C  

°C  

–

–

–

-55  

-55  

150  

150  

Operating junction temperature  

Soldering Temperature  

T

L  

260  

–

°C  

S

Distance of 1.6mm from case for 10s  

VDS=5V IDS=20A  

Transconductance  

GFS  

–

58  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

2

Thermal characteristics  

Table 3

 

Thermal characteristics (TO220)  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

0.79  

66  

R

thJC  

Thermal resistance, junction

 

– case  

–

–

–

–

°C/W –  

Thermal resistance, junction

 

– ambient

 

R

thJA  

°C/W device

 

on PCB, minimal footprint  

Thermal characteristics (TO252&TO263)  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

0.93  

47  

Thermal resistance, junction

 

– case  

Thermal resistance, junction

 

– ambient  

R

thJC  

R

thJA  

–

–

–

–

°C/W –  

°C/W device

 

on PCB, minimal footprint  

Thermal characteristics (TO220F)  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

4.2  

Thermal resistance, junction

 

– case  

R

thJC  

–

–

–

–

°C/W

–  

Thermal resistance, junction

 

– ambient

 

R

thJA  

60  

°C/W device

 

on PCB, minimal footprint  

Thermal characteristics (DFN5X6)  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

0.83  

50  

Thermal resistance, junction

 

– case  

Thermal resistance, junction

 

– ambient  

R

thJC  

R

thJA  

–

–

–

–

°C/W –  

°C/W device

 

on PCB, minimal footprint  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

3

Electrical characteristics  

at

T

j

=25°C, unless otherwise specified  

Table 4

 

Static characteristics  

Values  

Typ.  

–

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

85  

1.2  

–

Max.  

–

V

(BR)DSS  

V

(GS)th  

V

V

V

GS

=0V,

I

D

=250uA  

Drain-source breakdown voltage  

Gate threshold voltage  

2

.1  

V

DS

=

V

GS

,

I

D

=250uA  

2.5  

V

DS

=85V,

V

GS

=0V,

T

j

=25°C  

–

–

uA  

1

I

DSS  

I

GSS  

R

DS(on)  

Zero gate voltage drain current  

Gate-source leakage current  

VGS=±20V, VDS=0V  

–

–

±100

nA  

V

GS

=10V,

I

D

=20A,  

4.9  

5.6  

m

Ω

 

Drain-source on-state resistance  

Drain-source on-state resistance  

T

j

=25°C(TO220&TO220F)  

V

GS

=10V,

I

D

=20A,  

–

4.8  

5.6  

m

Ω  

R

DS(on)  

T

j

=25°C(TO252&TO263)  

V

GS

=10V,

I

D

=20A,

T

j

=25°C(DFN5X6)  

–

–

4.3  

1.5  

5.0  

–

m

Ω  

R

DS(on)  

R

G  

Drain-source on-state resistance  

Gate resistance (Intrinsic)  

Ω

f

=1MHz, open drain  

Table 5

 

Dynamic characteristics  

Values  

Typ.  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

C

iss  

C

oss  

C

rss  

–

–

–

4553  

–

–

–

pF  

pF  

pF  

V

GS

=0V,

V

DS

=25V,

f

=1MHz  

V

GS

=0V,

V

DS

=25V,

f

=1MHz  

V

GS

=0V,

V

DS

=25V,

f

=1MHz  

Input capacitance  

Output capacitance  

1215  

Reverse transfer capacitance  

107.1  

V

GS

=10V,  

V

GS

=10V,  

V

GS

=10V,  

V

GS

=10V,  

V

DD

=40V,  

R

G

=3

Ω

 

I

D

=2A,  

I

D

=2A,  

I

D

=2A,  

I

D

=2A,  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

22.2  

16.6  

44.2  

46.6  

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=40V,  

R

G

=3

Ω  

V

DD

=40V,  

R

G

=3

Ω  

Turn-off delay time  

Fall time  

V

DD

=40V,  

R

G

=3

Ω  

Table 6

 

Gate charge characteristics  

Values  

Typ.  

14.8  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Max.  

Q

gs  

Q

gd  

Q

g  

V

DD

=40V,

I

D

=20A,

V

GS

=0 to 10V  

V

DD

=40V,

I

D

=20A,

V

GS

=0 to 10V  

V

DD

=40V,

I

D

=20A,

V

GS

=0 to 10V  

Gate to source charge  

Gate to drain charge  

Gate charge total  

–

–

–

–

–

–

nC  

nC  

nC  

12  

63.7  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

Table 7

 

Reverse diode characteristics  

Values  

Parameter  

Symbol  

Unit Note

 

/ Test Condition  

Min.  

Typ.  

Max.  

V

SD  

t

rr  

V

GS

=0V,

I

F

=1A,

T

j

=25°C  

Diode forward voltage  

Reverse recovery time  

–

0.7  

–

V

V

R

=40V,

I

F

=20A, d

i

F

/d

t

=100A/µs  

–

–

–

38.53  

30.49  

1.38  

–

–

–

ns  

V

R

=40V,

I

F

=20A, d

i

F

/d

t

=100A/µs  

V

R

=40V,

I

F

=20A, d

i

F

/d

t

=100A/µs  

Reverse recovery charge  

Q

rr  

I

rrm  

n

C  

Peak reverse recovery current  

A

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

4. Electrical

 

characteristics diagram  

Diagram 1: Typ. Output characteristics  

Diagram 3: Typ. Rdson vs. Drain Current  

Diagram 5: Typ. Body-Diode Characteristics  

Diagram 2: Typ. Transfer characteristics  

Diagram 4: Typ. Rdson

–

Junction Temperature  

Diagram 6: Typ. Capacitance vs. Vds  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

Diagram 7: Typ. Power Dissipation  

Diagram 8: Typ. Drain

 

Current De-rating  

Diagram 9: Typ. Gate charge  

Diagram 10: Typ. Maximum Safe Operating Area  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

5 Test

 

Circuits  

Table 8

 

Diode characteristics  

Table 9

 

Switching times  

Table 10

 

Unclamped inductive load  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

4

Package Outlines  

Figure1

：

Outline PG‐TO2

20  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

Figure2

：

Outline PG‐TO2

52(HT)  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

Figure3

：

Outline PG‐

DFN5X6(HC)  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

Figure4

：

Outline PG‐

TO220F(HT)  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

Figure5

：

Outline PG‐

TO263(HC)  

AUP056N08BGL, AUD056N08BGL,  

AUN050N08BGL, AUA056N08BGL, AUB056N08BGL  

Revision History  

Revision

Date  

Subjects (major changes since last revision)  

Preliminary version  

1.0  

1.1  

1.2  

2021-11-4  

2021-11-18  

2022-01-11  

Updated EAS L=0.5mH  

Added DFN5X6 package and Electrical characteristics diagram  

1.3  

1.4  

1.5  

Added TO220F package  

Updated Vth limit  

2022-06-13  

2022-09-09  

2022-10-18 Added

 

TO263 package  

，

and updated diagram2.