Anpec-Elec-APM4500AKC-TRG
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APM4500AK
Dual Enhancement Mode MOSFET (N- and P-Channel)
Pin Description
Features
D1
D1
D2
D2
·
N-Channel
20V/8A,
R
DS(ON)
=22m
W
(typ.) @ V
GS
= 4.5V
R
DS(ON)
=30m
W
(typ.) @ V
GS
= 2.5V
S1
G1
S2
G2
·
P-Channel
-20V/-4.3A,
Top View of SOP
–
8
R
DS(ON)
=80m
W
(typ.) @ V
GS
=-4.5V
(8) (7)
D1 D1
(6) (5)
D2 D2
R
DS(ON)
=105m
W
(typ.) @ V
GS
=-2.5V
Super Hig
h
D
ense Cell Design
Reliable and Rugged
·
·
·
Lead Free and Green Devices Available
(RoHS Compliant)
(2)
G1
(4)
G2
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S1
(1)
S2
(3)
N-Channel
P-Channel
Ordering and Marking Information
APM4500A
Package Code
K : SOP-8
Operating Junction Temp. Range
Assembly Material
C : -55
to 150
C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
Handling Code
Temp. Range
Package Code
G : Halogen and Lead Free Device
APM4500A
XXXXX
APM4500A K :
XXXXX – Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
ANPEC Electronics Corp.
1
Rev. A.3 – May., 2008
APM4500AK
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
*
Parameter
N Channel
P Channel
Unit
20
±12
8
-20
±12
-4.3
-16
-2
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
V
GS
=10V(N)
V
GS
=-10V(P)
A
A
I
DM
*
30
2.5
Pulsed Drain Current
I
S
*
T
J
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
150
°C
T
STG
-55 to 150
T
A
=25°C
2
W
P
D
*
Power Dissipation
T
A
=100°C
0.8
R
q
JA
Note:
*
Thermal Resistance-Junction to Ambient
°C/W
62.5
*Surface Mounted on 1in
2
pad area, t
£
10sec.
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
APM4500AK
Symbol
Parameter
Test Conditions
Unit
V
Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown
N-Ch
20
–
–
–
V
GS
=0V, I
DS
=250
m
A
BV
DSS
Voltage
P-Ch -20
–
V
GS
=0V, I
DS
=-250
m
A
V
DS
=16V, V
GS
=0V
–
–
–
1
Zero Gate Voltage Drain
Current
I
DSS
N-Ch
–
T
J
=85°C
30
-1
m
A
V
DS
=-16V, V
GS
=0V
–
–
Zero Gate Voltage Drain
Current
I
DSS
P-Ch
–
T
J
=85°C
–
-30
1
N-Ch 0.5
0.7
V
DS
=V
GS
, I
DS
=250
m
A
V
DS
=V
GS
, I
DS
=-250
m
A
V
GS(th)
V
Gate Threshold Voltage
Gate Leakage Current
P-Ch -0.5
-0.75
-1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
±10
±10
26
90
36
115
–
–
–
–
–
–
I
GSS
V
GS
=±10V, V
DS
=0V
m
A
V
GS
=4.5V, I
DS
=8A
V
GS
=-4.5V, I
DS
=-4.3A
V
GS
=2.5V, I
DS
=5.2A
V
GS
=-2.5V, I
DS
=-2A
22
80
30
105
Drain-Source On-State
Resistance
a
R
DS(ON)
m
W
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ANPEC Electronics Corp.
2
Rev. A.3 – May., 2008
APM4500AK
Electrical Characteristics (Cont.)
(T
A
= 25
°
C unless otherwise noted)
APM4500AK
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Diode Characteristics
I
SD
=2.5A, V
GS
=0V
N-Ch
–
0.8
1.3
a
V
SD
Diode Forward Voltage
V
I
SD
=-2A, V
GS
=0V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
-0.7
15
22
7
-1.3
N-Channel
I
SD
=-8A, dl
SD
/dt =100A/µs
–
–
–
–
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
P-Channel
I
SD
=-4.3A, dl
SD
/dt =100A/µs
q
rr
nC
6
Dynamic Characteristics
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
–
–
–
–
–
–
–
4
–
–
–
–
–
–
–
R
G
Gate Resistance
Input Capacitance
V
GS
=0V,V
DS
=0V,F=1MHz
W
9
N-Channel
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
740
565
160
125
125
C
iss
C
oss
Output Capacitance
pF
P-Channel
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
Reverse Transfer
C
rss
Capacitance
P-Ch
–
95
–
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
5
10
12
21
24
73
62
42
59
N-Channel
t
d(ON)
Turn-on Delay Time
V
DD
=10V, R
L
=10
W
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
W
6
11
13
40
34
23
32
t
r
Turn-on Rise Time
ns
P-Channel
t
d(OFF)
Turn-off Delay Time
V
DD
=-10V, R
L
=10
W
,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6
W
t
f
Turn-off Fall Time
Gate Charge Characteristics
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
10
6
13
8
–
N-Channel
V
DS
=10V, V
GS
=4.5V,
I
DS
=8A
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
1
Q
gs
nC
1
–
P-Channel
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-4.3A
4
–
Q
gd
2.2
–
Notes:
a : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
b : Guaranteed by design, not subject to production testing.
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ANPEC Electronics Corp.
3
Rev. A.3 – May., 2008
APM4500AK
Typical Characteristics
N-Channel
Power Dissipation
Drain Current
2.5
2.0
1.5
1.0
0.5
10
8
6
4
2
T
A
=25
o
C
0.0
T
A
=25
o
C,V
G
=4.5V
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (°C)
T
j
– Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
300
m
s
0.2
0.1
1ms
0.1
0.01
1E-3
10ms
100ms
1s
0.05
0.02
1
0.01
Single Pulse
0.1
DC
Mounted on 1in
2
pad
T
A
=25
O
C
R
q
JA
: 62.5
o
C/W
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1 10
30
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
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ANPEC Electronics Corp.
4
Rev. A.3 – May., 2008
APM4500AK
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
60
50
40
30
20
10
0
20
V
GS
= 3, 4, 5, 6, 7, 8, 9, 10V
18
16
2.5V
V
GS
=2.5V
14
12
10
8
V
GS
=4.5V
2V
6
4
2
1.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
40
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
DS
=250
m
A
I
D
=8A
35
30
25
20
15
10
-50 -25
0
25 50 75
100 125 150
1
2
3
4
5
6
7
8
9
10
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
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ANPEC Electronics Corp.
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Rev. A.3 – May., 2008
APM4500AK
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
30
10
V
GS
= 4.5V
I
DS
= 8A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 22m
W
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (°C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
10
Frequency=1MHz
V
DS
=10V
I
DS
=8A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
20
0
4
8
12
16
20
Q
G
– Gate Charge (nC)
V
DS
– Drain – Source Voltage (V)
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ANPEC Electronics Corp.
6
Rev. A.3 – May., 2008
APM4500AK
Typical Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
2.5
2.0
1.5
1.0
0.5
5
4
3
2
1
0
T
A
=25
o
C
0.0
T
A
=25
o
C,V
G
=-4.5V
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (°C)
T
j
– Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
100
10
Duty =
0.5
0.2
0.1
1ms
0.05
0.02
0.1
0.01
1E-3
10ms
1
100ms
1s
0.01
Single Pulse
0.1
DC
Mounted on 1in
2
pad
T
A
=25
O
C
R
q
JA
: 62.5
o
C/W
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1
10 30
-V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
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ANPEC Electronics Corp.
Rev. A.3 – May., 2008
7
APM4500AK
Typical Characteristics (Cont.)
P-Channel
Output Characteristics
Drain-Source On Resistance
200
180
160
140
120
100
80
20
V
GS
= -4,-5,-6,-7 -8,-9,-10V
18
-3V
16
14
12
10
8
V
GS
= -2.5V
V
GS
= -4.5V
-2V
6
60
4
-1.5V
40
2
0
0.0
20
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
-V
DS
– Drain – Source Voltage (V)
-I
D
– Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
160
I
DS
= -250
m
A
I
D
= -4.3A
140
120
100
80
60
40
20
-50 -25
0
25 50 75
100 125 150
1
2
3
4
5
6
7
8
9
10
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
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ANPEC Electronics Corp.
8
Rev. A.3 – May., 2008
APM4500AK
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
20
10
2.0
V
GS
= -4.5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
= -4.3A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 80m
W
0.1
0.0
0.3
0.6
0.9
1.2
1.5
1.8
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (°C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
800
700
600
500
400
300
200
100
0
Frequency=1MHz
V
DS
= -10V
I
DS
= -4.3A
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
4
8
12
16
20
Q
G
– Gate Charge (nC)
-V
DS
– Drain – Source Voltage (V)
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ANPEC Electronics Corp.
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Rev. A.3 – May., 2008
APM4500AK
Package Information
SOP-8
D
SEE VIEW A
b
c
e
GAUGE PLANE
SEATING PLANE
L
VIEW A
SOP-8
S
Y
M
B
O
L
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.069
0.010
A
1.75
0.25
0.004
0.049
0.012
0.007
0.10
1.25
0.31
0.17
4.80
5.80
3.80
A1
A2
b
0.020
0.010
0.51
0.25
5.00
6.20
4.00
c
D
0.189
0.228
0.150
0.197
0.244
0.157
E
E1
e
1.27 BSC
0.050 BSC
0.010
0.016
0.020
0.050
0.25
0.40
0.50
1.27
h
L
°
°
0
0
8
0
8
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
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ANPEC Electronics Corp.
10
Rev. A.3 – May., 2008
APM4500AK
Carrier Tape & Reel Dimensions
P0
P2
P1
OD0
A
K0
A0
A
OD1
B
B
SECTION A-A
SECTION B-B
d
T1
A
H
T1
C
d
D
W
E1
F
Application
SOP- 8
12.4+2.00 13.0+0.50
-0.00 -0.20
330.0
±
2.00 50
MIN.
1.5 MIN.
20.2 MIN.
12.0
±
0.301.75
±
0.10 5.5
±
0.05
P0
P1
P2 D0
D1
T
A0
B0
K0
1.5+0.10
-0.00
0.6+0.00
-0.40
4.0
±
0.10
8.0
±
0.10 2.0
±
0.05
1.5 MIN.
6.40
±
0.20 5.20
±
0.20 2.10
±
0.20
(mm)
Devices Per Unit
Unit
Package Type
Quantity
2500
Tape & Reel
SOP-8
Copyright
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ANPEC Electronics Corp.
11
Rev. A.3 – May., 2008
APM4500AK
Reflow Condition
(IR/Convection or VPR Reflow)
tp
T
P
Critical Zone
T
L
to T
P
Ramp-up
T
L
t
L
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
245
°
C, 5 sec
HOLT
PCT
TST
1000 Hrs Bias @125
°
C
168 Hrs, 100
%
RH, 121
°
C
-65
°
C~150
°
C, 200 Cycles
MIL-STD-883D-1011.9
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(T
L
to T
P
)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3
°
C/second max.
3
°
C/second max.
Preheat
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-180 seconds
–
Temperature Min (Tsmin)
–
Temperature Max (Tsmax)
–
Time (min to max) (ts)
Time maintained above:
–
Temperature (T
L
)
183
°
C
60-150 seconds
217
°
C
60-150 seconds
–
Time (t
L
)
Peak/Classification Temperature (Tp)
See table 1
See table 2
Time within 5
°
C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6
°
C/second max.
6
°
C/second max.
6 minutes max.
8 minutes max.
Time 25
°
C to Peak Temperature
Notes: All temperatures refer to topside of the package. Measured on the body surface.
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ANPEC Electronics Corp.
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Rev. A.3 – May., 2008
APM4500AK
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350
<2.5 mm
³
2.5 mm
240 +0/-5
°
C
225 +0/-5
°
C
225 +0/-5
°
C
225 +0/-5
°
C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350-2000
Volume mm
3
>2000
<1.6 mm
1.6 mm – 2.5 mm
³
2.5 mm
260 +0
°
C*
260 +0
°
C*
250 +0
°
C*
260 +0
°
C*
250 +0
°
C*
245 +0
°
C*
260 +0
°
C*
245 +0
°
C*
245 +0
°
C*
*Tolerance: The device manufacturer/supplier
shall
assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0
°
C. For example 260
°
C+0
°
C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel :
886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing
Rd.,
Sindain Cit
y
, Taipei County 23146, Taiwan
Tel :
886-2-2910-3838
Fax : 886-2-2917-3838
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ANPEC Electronics Corp.
13
Rev. A.3 – May., 2008
