APEC-Advanced-Power-Elec-AP2P053N
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AP2P053N
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Capable of 2.5V Gate Drive
BV
DSS
-20V
65m
Ω
-4.2A
D
▼
Small Package Outline
R
DS(ON)
3
▼
Surface Mount Device
I
D
S
▼
RoHS Compliant & Halogen-Free
SOT-23S
G
D
S
Description
AP2P053 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
G
The SOT-23S package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
– 20
V
Gate-Source Voltage
+12
V
Drain Current
3
, V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
-4.2
A
-3.4
A
-16
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.25
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Value
100
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
℃
/W
Data and specifications subject to change without notice
1
201611151
AP2P053N
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
Parameter
Test Conditions
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-4.5A
V
GS
=0V, I
D
=-250uA
-20
–
–
–
–
V
R
DS(ON)
–
–
53
65
m
Ω
m
Ω
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-2A
–
–
–
100
m
Ω
V
V
GS(th)
g
fs
I
DSS
I
GSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-3A
V
DS
=-16V, V
GS
=0V
V
GS
= +12V, V
DS
=0V
I
D
=-3A
-0.5
-1.2
–
–
–
–
–
–
–
–
–
–
–
–
–
9
–
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
–
-10
–
+100
Q
g
10
2
16
–
Q
gs
Q
gd
t
d(on)
t
r
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
V
DS
=-10V
V
GS
=-4.5V
2
–
V
DS
=-10V
8
–
I
D
=-1A
12
24
38
–
t
d(off)
t
f
Turn-off Delay Time
Fall Time
R
G
=3.3
Ω
–
V
GS
=-5V
–
C
iss
C
oss
C
rss
Input Capacitance
V
GS
=0V
.
1000 1600
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-10V
120
90
–
–
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-1A, V
GS
=0V
Min. Typ. Max.
Units
V
SD
t
rr
–
–
–
–
-1.2
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
I
S
=-3A, V
GS
=0V,
dI/dt=100A/µs
12
4
–
–
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t < 10s ; 300
℃
/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2P053N
12
10
8
20
16
12
8
T
A
=25
o
C
T
A
= 150
o
C
-5.0V
-4.5V
-3.5V
-3.0V
-2.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.5V
V
G
= -2.0V
6
V
G
= -2.0V
4
4
2
0
0
0
2
4
6
8
10
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
90
80
70
60
50
40
2
I
D
= -2A
T
A
=25
o
C
I
D
= -4A
V
GS
= -4.5V
1.6
1.2
0.8
0.4
0
Ω
.
-100
-50
0
50
100
150
1
2
3
4
5
T
j
, Junction Temperature (
o
C)
-V
GS
, Gate-to-Source Voltage (V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
4
2
0
2
1.6
1.2
0.8
0.4
0
I
D
= -250uA
T
j
=150
o
C
T
j
=25
o
C
-100
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T
j
, Junction Temperature (
o
C)
-V
SD
, Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2P053N
f=1.0MHz
8
1600
1200
800
400
0
I
D
= -3A
V
DS
= -10V
6
4
2
0
C
iss
C
oss
C
rss
1
5
9
13
17
21
25
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor=0.5
0.2
10
0.1
Operation in this area
0.1
limited by R
DS(ON)
0.05
100us
1ms
1
P
DM
0.02
t
.
0.01
T
10ms
Single Pulse
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
0.1
100ms
1s
DC
Rthja = 300
℃
/W
T
A
=25
o
C
Single Pulse
0.01
0.001
0.0001
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
V
DS
= -5V
V
G
T
j
=25
o
C
T
j
=150
o
C
8
Q
G
-4.5V
6
Q
GD
Q
GS
4
2
Q
Charge
0
0
0.5
1
1.5
2
2.5
3
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP2P053N
400
300
200
100
0
1.6
1.2
0.8
0.4
0
T
j
=25
o
C
Ω
-2.5V
GS
= -4.5V
V
0
50
100
150
0
2
4
6
8
10
12
T
A
, Ambient Temperature(
o
C)
-I
D
, Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP2P053N
MARKING INFORMATION
Part Number : A19
A19SS
Date Code : SS
SS:2004,2008,2012,2016,2020…
SS:2003,2007,2011,2015,2019…
SS:2002,2006,2010,2014,2018…
SS:2001,2005,2009,2013,2017…
.
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