APEC-Advanced-Power-Elec-AP4439GM
| Part # | APEC-Advanced-Power-Elec-AP4439GM |
Download  | APEC-Advanced-Power-Elec-AP4439GM |
Address: 12F-1&2, No.5, Taiyuan 1 ST., Zhubei
City, Hsinchu County 30265, Taiwan,
R.O.C.Tel:886-3-6215899 Fax:886-3-6215999
E-mail:mail@a-power.com.tw
富鼎先進電子股份有限公司
AD
V
A
NCED POWER ELECTRONICS COR
P
.
承 認 書
Specification Sheet
Customer
：
海創科技有限公司
Customer Part Number
AP4439GM-HF
AP4439GM-HF
APEC Part Number
Issued Date
SPEC No.
2015/05/13
SPEC-201505-0014
APEC Approved
批准
2015
.
0
5
.
1
3
D C C
Sales Manager
Sales
QA
Customer Approved
Dept.
Signature
FP-7201-01C
Item
Contents
Page
1
2
3
4
5
6
Data Sheet
p1~p5
p6~p7
p8~p15
p16~p17
p18
Package Outline
Packing Standard
Material List
IR Reflow
Reliability Test Report
AnnexI p1~p8
AP4439GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
-30V
D
D
D
▼
Lower On-resistance
10m
Ω
-13.3A
D
▼
Fast Switching Characteristic
G
S
▼
RoHS Compliant & Halogen-Free
S
S
SO-8
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
-30
Gate-Source Voltage
+25
V
Drain Current
3
, V
GS
@ 10V
Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
-13.3
A
-10.6
A
-50
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
2.5
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
℃
/W
Data and specifications subject to change without notice
1
201410166AP
AP4439GM-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Test Conditions
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-12A
V
GS
=0V, I
D
=-250uA
-30
–
8
–
V
–
–
10
17
m
Ω
m
Ω
V
GS
=-4.5V, I
D
=-8A
12
V
GS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-12A
V
DS
=-24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-12A
-1
–
–
32
–
-3
V
g
fs
–
S
I
DSS
I
GSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
–
-30
–
–
+100
Q
g
–
31
6.5
14.5
9
70
–
Q
gs
Q
gd
t
d(on)
t
r
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
V
DS
=-15V
–
V
GS
=-4.5V
–
–
V
DS
=-15V
–
–
I
D
=-1A
–
7
–
t
d(off)
t
f
Turn-off Delay Time
Fall Time
R
G
=3.3
Ω
–
100
63
–
V
GS
=-10V
–
–
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
GS
=0V
–
2770 5080
pF
pF
Ω
Output Capacitance
V
DS
=-25V
.
–
420
375
5
–
–
–
Reverse Transfer Capacitance
Gate Resistance
f=1.0MHz
–
f=1.0MHz
–
Source-Drain Diode
Symbol
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-2A, V
GS
=0V
Min. Typ. Max.
Units
V
SD
t
rr
–
–
–
–
-1.2
V
Reverse Recovery Time
Reverse Recovery Charge
I
S
=-12A,
V
GS
=0
V
,
dI/dt=100A/µs
31
23
–
–
ns
nC
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t < 10s ; 125
℃
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4439GM-HF
50
40
30
20
10
0
50
40
30
20
10
0
T
A
= 150
o
C
T
A
= 25
o
C
– 10 V
– 7.0 V
– 6.0 V
– 5.0 V
G
= – 4.0 V
– 10 V
– 7.0 V
– 6.0 V
– 5.0 V
V
G
= – 4.0 V
V
0
1
2
3
4
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
14
I
D
= -12 A
I
D
= -8 A
V
G
=-10V
T
A
=25
℃
12
10
8
Ω
.
6
2
4
6
8
10
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS
, Gate-to-Source Voltage (V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
10
8
1.4
1.2
1
6
T
j
=150
o
C
T
j
=25
o
C
0.8
0.6
0.4
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
SD
, Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4439GM-HF
f=1.0MHz
10
5000
4000
3000
2000
1000
0
I
D
= -12A
V
DS
= -15V
8
6
4
2
0
C
iss
C
oss
C
rss
1
5
9
13
17
21
25
29
0
10
20
30
40
50
60
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this
100us
area limited by
R
DS(ON)
0.2
0.1
10
1ms
0.1
0.05
10ms
1
0.02
.
100ms
1s
0.01
P
DM
0.01
t
T
0.1
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
T
A
=25
o
C
DC
Single Pulse
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
G
V
DS
90%
Q
G
-4.5V
Q
GD
Q
GS
10%
V
GS
t
r
t
d(on)
t
d(off)
t
f
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4439GM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
4439GM
Package Code
Date Code (YWWSSS)
YWWSSS
Y
：
Last Digit Of
The Year
WW
：
Week
SSS
：
Sequence
.
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN
1.35
0.05
0.30
4.80
5.79
3.70
NOM
MAX
A
A1
B
1.55
1.75
0.25
0.51
5.30
6.20
4.10
8
1
7
6
3
5
4
0.15
0.41
E
E1
D
E
5.05
6.00
E1
e
3.90
2
1.27 TYP
0.21
G
F
0.17
0.38
0°
0.25
1.27
8°
0.83
e
α
4°
B
A
1.All Dimension Are In Millimeters.
A1
2.Dimension Does Not Include Mold Protrusions.
.
α
G
F
Draw No.
M1-M8-G-v03
6
SO-8
SO-8 FOOTPRINT
：
1.27mm
4.1mm
6.2mm
2.1mm
0.7mm
.
ADVANCED POWER ELECTRONICS COR
P
.
Draw No. M1-M8-G-v03
7
富鼎先進電子股份有限公司
包裝規範
(5.1.5 USE BUBLE PLASTIC MATERIAL INSIDE THE CARTON THEN PUT THE
WAFER BOX ONTO CARTON. AS ATTACHMENT
十一
-3 )
5.2
P
ACKAGE
產品包裝作業規定
(5.2 PACKAGED FG PACKING STANDARD.)
5.2.1
管條
(TUBE)
之裝箱法
(5.2.1 TUBE
P
ACKING STANDARD.)
5.2.1.1
PKG TYPE
TUBE
TO-220
50ea
TO-220CFM
50ea
TO-262
50ea
DIP-8
50ea
TO-3P
30ea
TO-251
80ea
TO-247
30ea
INNER BOX
1000ea/Box
1000ea/Box
1000ea/Box 3000ea/Box
360ea/Box
8000ea/Box
40000ea/carton
240ea/Box
6000ea/carto 12000ea/carto
OUTER CORTON
6000ea/carton 6000ea/carton
1440ea/carton
1200ea/carton
n
n
Attachment(
一
)
Attachment
Attachment
CARTON
Attachment
Attachment Attachment
Attachment(
四
)
Attachment (
一
DIMENSION
(
一
)
(
一
)
(
五
)
(
七
)
(
十二
)
-1)
5.2.1.2
尾數箱裝箱時需將剩餘空間，以小內盒或氣泡膠填充之。
(5.2.1.2 NEED TO PUT EMPTY INNER BOX INSIDE OUTER CARTON
FOR NON FULL PACKED CARTON.)
5.2.2
捲型包裝
(TAPE&REEL)
之裝箱法
(5.2.2 TAPE & REEL PECKING STANDARD.)
5.2.2.1
SO-8/TSSOP-8/
ESOP-8/
SOT-23/5/6/
SOT-323/363
SC70-4L/5L/
TSOT-23/5/6
DNF 3
¯
2/
DFN 2
¯
2
TO-252/
SOT-223
PMPAK/
PKG TYPE
TO-263
SOT-89
GEM2928-8
TO-92
2000ea
MESOP-8/
MESOP-10
DFN 3
¯
3
3000ea
REEL
3000ea
800ea
3000ea
1000ea
3000ea
INNER BOX
6000ea/Box
800ea/box
6000ea/box
15000ea/box
4000ea/box
15000ea/box 2000ea/box
OUTER
24000ea/carton 4000ea/carton
48000ea/carton
150000ea/carton 40000ea/carton
150000ea/box 32000ea/box
Attachment Attachment
CORTON
CARTON
Attachment
Attachment (
二
)
Figure
一
/
六
Attachment (
三
) Attachment
(
二
) Attachment
(
二
)
DIMENSION
(
二
)
(
二
)
(
八
)
Figure
四
/
十
/
十二
/
十三
/
十四
Figure
七
Figure
九
REEL SPEC.
Figure
三
Figure
二
/
八
/
十一
Figure
五
5.2.2.2
尾數箱裝箱時需將剩餘空間，以小內盒或氣泡膠填充之。
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頁
別：40
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8
The copyright belongs to APEC. Any unauthorized use is prohibited.
富鼎先進電子股份有限公司
包裝規範
(5.2.2.2 NEED TO PUT EMPTY IN’NER BOX OUTER CARTON FOR NON
FULL
P
ACKED CARTON.)
5.2.2.3
單一料捲只允許二個不
同
D
A
TA
C
ODE
併捲。
(5.2.2.3 Only allow 2 different date code to be combined into one reel.)
5.2.3
靜電袋之裝箱法
(5.2.3 BAG
P
ACKING STANDARD.)
PKG TYPE
BAG
TO-220
50ea
TO-251/TO-92
100ea
INNER BOX
OUTER CORTON
500ea/box
10000ea/box
4000ea/carton 40000ea/carton
CARTON DIMENSION
Attachment
(
六
)
Attachment
(
八
)
5.2.3.2
尾數箱裝箱時需將剩餘空間，以小內盒氣泡膠填充之。
(5.2.3.2 NEED TO PUT EMPEY INNER BOX INSIDE OUTER CARTON
FOR NON FULL PACKED CARTON.)
5.3
不同產品不可裝入同一箱子內，以避免產品混料。
(5.3 NO ANY DIFFERENT P/N FG INSIDE SAME CARTON.)
5.4
包裝箱標籤：整貨裝箱後將型號數量標籤
(
如附件七
)
貼在紙箱及小內盒側面。
(5.4 LABELING
：
A
T
TACH LABEL ONTO INNER BOX & OUTER CARTON AS
A
T
TAHMENT
七
.)
5.5
真空包
裝
：
產
品料卷放入抗靜電鋁箔袋
中
，
同
乾燥劑及濕度指示卡一起抽真空後，
再置入內盒
(Pizza Box)
5.5.1.
真空包裝之裝箱法：
SOT-23/25/26
SO-8/TSSOP-8/
ESOP-8/PM
P
A
K/
MESOP-8/MESOP-10
DFN 3
¯
3
SOT-323/363
SC70-4L/5L
TSOT-23/5/6
DNF 3
¯
2/
DFN 2
¯
2
TO-252/
SOT-223
PKG TYPE
TO-263
SOT-89
GEM2928-8
REEL
3000ea
800ea
3000ea
3000ea
1000ea
3000ea
INNER BOX
6000ea/Box
800ea/box
6000ea/box
12000ea/box
3000ea/box
15000ea/box
OUTER CORTON
24000ea/carton 4000ea/carton
48000ea/carton
120000ea/carton 30000ea/carton
150000ea/box
CARTON
Attachment (
二
) Attachment
(
二
)
DIMENSION
Attachment (
三
)
Attachment (
二
) Attachment
(
二
) Attachment(
二
)
Figure
四
/
十
/
十二
/
十三
/
十四
Figure
七
REEL SPEC.
Figure
一
/
六
Figure
三
Figure
二
/
八
/
十一
Figure
五
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頁
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9
The copyright belongs to APEC. Any unauthorized use is prohibited.
富鼎先進電子股份有限公司
包裝規範
5.5.2. 7
吋料卷如附件
(
九
)
5.2.3. 13
吋料卷如附件
(
十
)
*
以上依客戶需求使用之。
5.6
包裝檢驗：裝箱完成後通
知
QA
檢驗，檢驗合格則蓋上檢查合格章後等待出貨。
(5.6
P
ACKING INSPECTION
：
STAMP QA IN SPETION ONTO LABEL AFTER
COMPLETE
L
Y P
A
CKING STE
P
.
)
6.
外購成品的包裝規範依客戶要求。
(6. THE PACKING SPEC. OF PURCHASED FG IS FOLLOWED BY CUSTOMER’S
REQUIREMENT.)
7.相關文件：無
(7. DOCUMENT
：
NO)
附件七：外箱標籤 (
CARTON LABEL )
檢驗合格標章樣式：
有鉛產品標籤
(For Pb-Sn Product)
：
富鼎先進電子股份有限公司
AD
V
A
NCED POWER ELECTRONICS CORP.
P/N
：
DateCode
：
QC
：
檢 查
合 格
Q’TY
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10
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包裝規範
無鉛產品標籤
(For Pb Free Product)
：
無鹵產品標籤
(For Halogen Free Product)
：
貼於產品標籤面右上角：
G. P. P
A
SS
晶片盒標籤：
(For Wafer Box)
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11
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包裝規範
Attachment 3
：
SO-8
、
ESOP-8
、
TSSOP-8
、
PM
P
AK
、
MESOP-8
、
MESOP-10
、
DFN 3
¯
3 Carton
50
20
5
70
30
45
8mm
10mm
38
65
100
50
PC0056
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12
The copyright belongs to APEC. Any unauthorized use is prohibited.
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包裝規範
附圖二
：
Tape & Reel Information : SO-8/ESOP-8
(330 mm)
1.All Dimensions Are Shown
in Millimeters.
2. Packing : 3000 pcs / reel.
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包裝規範
附件十：
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頁
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碼：
34
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14
The copyright belongs to APEC. Any unauthorized use is prohibited.
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包裝規範
附件十
-1
：
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頁
別：39
碼：
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ADVANCED POWER ELECTRONICS CORP.
Date
2015/2/25
SO8-HF(E) Material
list
Material
Supplier
Parts Weight
Percentage
by parts
Parts
Material P/N
Country
Substance
Weight (mg)
Percentage
CAS No.
(mg)
Epoxy Resin A
3.23
1.29
1.29
35.74
1.29
0.22
5.45
0.29
0.15
32.58
0.81
0.00
0.03
0.04
0.86
1.09
0.00
0.06
0.00
2.04
0.00
86.46
3.74%
1.49%
1.49%
41.34%
1.49%
0.25%
6.30%
0.34%
0.17%
37.69%
0.93%
0.00%
0.03%
0.05%
0.99%
1.27%
0.00%
0.06%
0.00%
2.36%
0.00%
100.00%
7.50%
3.00%
3.00%
Trade Secret
29690-82-2
Trade Secret
Epoxy Resin B
Phenol Resin
Compound
Sumitomo
Heraeus
ASM
G600FL
China
49.81%
43.063
Silica(Amorphous) A
83.00% 60676-86-0
3.00% 7631-86-9
0.50% 1333-86-4
92.50% 7439-92-1
5.00% 7440-31-5
2.50% 7440-22-4
94.94% 7440-50-8
Silica(Amorphous) B
Carbon Black
Pb
PbSn5Ag2.5-
D3-RM218-8
Die attach
China
6.81%
5.887
Sn
Ag
Cu
Fe
2.35%
0.01%
0.08%
0.12%
2.50%
7439-89-6
7439-92-1
7723-14-0
7440-66-6
7440-22-4
Pb
Lead Frame
A194+Ag
China
39.69%
34.320
P
Zn
Ag
Sn
99.99% 7440-31-5
0.01%
99.99% 7440-57-5
0.01%
99.99% 7429-90-5
Plating
ASEM
Heraeus
Runxiang
Sn
China
China
China
1.27%
0.06%
1.094
0.056
others
Au
others
Al
–
Gate Wire
Source Wire
Au wire
Al wire
–
2.36%
2.040
86.46
others
0.01%
–
100.00%
600.00%
16
富鼎先進電子股份有限公司
ADVANCED POWER ELECTRONICS CORP.
Date
2014/7/3
SO8-HF(G) Material
list
Parts Weight
Percentage by
parts
Parts
Material Supplier
HITACHI
Material P/N
CEL-9240HF
Country
Substance
Weight (mg)
Percentage
CAS No.
(mg)
Epoxy resin 1
1.18
0.35
1.62
1.75
0.09
38.59
0.26
0.31
11.99
0.62
0.71
0.48
29.83
0.72
0.00
0.03
0.04
0.20
2.56
0.00
1.25
0.00
0.01
0.00
92.61
1.28%
0.38%
1.75%
1.89%
0.09%
41.67%
0.28%
0.34%
12.95%
0.67%
0.76%
0.52%
32.22%
0.78%
0.00%
0.03%
0.04%
0.22%
2.76%
0.00%
1.35%
0.00%
0.01%
0.00%
100.00%
2.7%
0.8%
Trade secret
Trade secret
Trade secret
Trade secret
1333-86-4
60676-86-0
14808-60-7
7440-22-4
7439-92-1
7440-31-5
65997-05-9
Trade secret
7440-50-8
7439-89-6
7439-92-1
7723-14-0
7440-66-6
7440-22-4
7440-31-5
–
Epoxy resin 2
Epoxy resin 3
Hardener 1
3.7%
Compound
JAPAN
47.35%
43.85
4.0%
0.2%
CaRBON Black
88.0%
0.6%
Amorphous silica
Crystal silica
Ag
2.20%
85%
Pb
SOLDER PASTE
Indium
Pb92.5Sn5Ag2.5
U.S.A
15.23%
33.29%
14.10
30.83
Sn
4.40%
5%
Rosin
Proprietary
3.40%
96.77%
2.35%
0.01%
0.09%
0.13%
0.65%
99.99%
0.01%
99.99%
0.01%
99.35%
0.65%
600.00%
Cu
Fe
Pb
Lead Frame
ASM
A194
Hong kong
P
Zn
Ag
Sn
Wire-1
Wire-2
Al
1.35%
1.25
Impurity
Al
7429-90-5
–
AMETEK(SPM)
TANAKA
Malaysia
SINGAPORE
Impurity
Cu
7440-50-8
–
HERAEUS
Cu
MALAYSIA
0.01%
0.0075
92.61
Impurity
100.00%
17
ADVANCED POWER ELECTRONICS CORP.
Recommended Reflow
Profile for Lead(Pb) Free Soldering
(Pure Matte Tin Plating)
Lead(Pb) free solders which require to use higher reflow temperature. Advanced Power Electronics
Corp. has studied the reliability of our products at higher reflow temperature. Customer may use
below temperature profile for the solders requirement.
Table 1. Lead-Free Reflow Rrofile Recommendation(IPC/JEDEC J-STD-020C)
Reflow Parameter
Minimum preheat temperature(Ts
MIN
Lead-Free Assembly
150° C
Maximum preheat temperature(Ts
MAX
)
200° C
Preheat Time
Ts
MAX
TO T
L
ramp-up rate
60-180 seconds
3° C/second maximum
217° C 60-150 seconds
Time above temperature T
L
(t
L
)
Peak Temperature (T
p
)
260° C
Time 25 C To Tp
Time within 5c of Peak Tp
Ramp-down rate
8 minute maximum
20-40 seconds
6° C/second maximum
* Could meet three 3 cycles
18
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
1
of 8
Reliability Test Report
AP4439GM-HF
I.
Accelerated Life Times Stress Test
II. Environmental
Stress Test
SO-8(M)
Approved by
Prepared by
Date: 2012/12/06
Date: 2012/12/06
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
2
of 8
TABLE OF CONTENTS
Page
3
1. Introduction
2. Test
Procedure
3
2.1 Pre-Condition (
SMD Packages devices only
)
2.2 Sampling Plan
3. Accelerated Life Time Stress Tests
3.1 Test Level
4
3.2 Test Result
3.3 Test Item Description
3.3.1 High Temperature Gate Bias (HTGB)
3.3.2 High Temperature Reverse Bias (HTRB)
4. Environmental & Package Stress Tests
4.1 Test Level
5
4.2 Test Result
4.3 Test Item Description
4.3.1 High Temperature Storage Test (HTST)
4.3.2 High Temperature & Humidity Reverse Bias (H3TRB)
4.3.3 Temperature Humidity Storage Test (THST)
4.3.4 Power Cycling Test (PRCL)
4.3.5 Temperature Cycling Test (TCT)
4.3.6 Pressure Cooker Test (PCT)
4.3.7 Thermal Shock Test (TST)
4.3.8 Highly Accelerated Stress Test (HAST)
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
3
of 8
1. Introduction
This report records the APEC product reliability test procedure, items and results;
give a clear overview of reliability qualification test.
2. Test Procedure
Sample from Production Lot
Pre-Condition
Pre-stress Electrical Test
Reliability Stress Test
Post-Stress Electrical Test
Y
e
s
Electrical / Chemical /
Physical Analysis
Failure
No
Alert / Corrective Action
Record Result
ꢀ
‧
Test Report
ꢀ
‧
Weekly Review
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
4
of 8
2.1 Pre-Condition
(
SMD Packages devices only
)
This is to simulate the product storage, shipping and customer application
environment.
Step 1: Baking 125
℃
, 24hrs.
Step 2: 85
℃
/ 85%R.H.
Soaking 168hrs. (J-STD-020 Level 1)
Step 3: IR Reflow Tmax.= 260
℃
, 3cycles
2.2 Sampling plan
Based on LTPD = 10% , AC=0
3. Accelerated Life Time Stress Test
3.1 Test Level
■
Routine Monitor Qualification
□
New Product Qualification
□
Engineer / Customer Request Qualification
3.2 Test Result
Sample
Size
Failure Rate
MTTF’ (10
6
)
Total Device
(hours)
Test Item
Result
Pass
Pass
( FITs )
Devices hrs.
High Temperature
Gate Bias(HTGB)
High Temperature
Reverse Bias (HTRB)
22
22
22000 hrs
22000 hrs
1186.08
0.84
1186.08
0.84
CL = 90% ; Ea = 0.7eV ; Operating Temp. = 70
℃
3.3 Test Item Description
3.3.1 High Temperature Gate Bias (HTGB)
‧
Reference Standard
EIAJ ED-4701 D323
HTGB
Operation spec.
(QWRAD-7117)
‧
Condition:
Temperature:
Max. Operating Temperature
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
5
of 8
Test Point:
Bias:
0, 168, 500, 1000 Hours
Nominal
Max. VGS Rating
3.3.2 High Temperature Reverse Bias (HTRB)
‧
Reference Standard
EIAJ ED-4701 D321
HTRB
Operation spec.
(QWRAD-7118)
‧
Condition:
Temperature:
Test Point:
Bias:
Max. Operating Temperature
0, 168, 500, 1000 Hours
Nominal
VS=VG=0V, VD= 80% of Max. BVDSS Rating
4. Environmental & Package Stress Test
4.1 Test Level
■
Routine Monitor Qualification
□
New Product Qualification
□
Engineer / Customer Request Qualification
4.2 Test Result
Sample
Size
22
Test Time
(hours/
cycles
)
1000 hrs.
1000 hrs.
1000 hrs.
10K cyc.
Test Item
Result
HTST
H3TRB
THST
PRCL
TCT
Pass : 0/22
Pass : 0/22
Pass : 0/22
Pass : 0/22
Pass : 0/22
Pass : 0/22
Pass : 0/22
Pass : 0/22
22
22
22
22
1000 cyc.
168 hrs.
PCT
22
TST
22
100 cyc.
HAST
22
96 hrs.
The pre-conditioning
(SMD Packages devices only)
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
6
of 8
4.3 Test Item Description
4.3.1 High Temperature Storage Test (HTST)
‧
Reference Standard
EIAJ ED-4701 B111A
HTST
Operation spec. (
QWRAD-7116)
‧
Condition:
Temperature:
Test Point:
Bias:
150
℃
0, 1000 Hours
Nominal
no Bias
4.3.2 High Temperature & Humidity Reverse Bias (H3TRB)
‧
Reference Standard
EIAJ ED-4701 B122A
H3TRB
Operation spec.
(QWRAD-7111)
‧
Condition:
Temperature:
85
℃
Relative Humidity:
85% R.H.
Test Point:
Bias:
0, 168, 500, 1000 Hours
Nominal
VS=VG=0V,
VD= 80% of Max. BVDSS Rating up to 100V
4.3.3 Temperature Humidity Storage Test (THST)
‧
Reference Standard
EIAJ ED-4701 B121
THST
Operation spec.
(QWRAD-7115)
‧
Condition:
Temperature:
85
℃
Relative Humidity:
85% R.H.
Test Point:
Bias:
0, 1000 Hours
Nominal
no bias
4.3.4 Power Cycling Test (PRCL)
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
7
of 8
‧
Reference Standard
EIAJ ED-4701 D322
PRCL
Operation spec. (
QWRAD-7114)
‧
Condition:
Temperature:
Test Point:
Tj=
△
100
℃
0, 10000 Cycles Nominal
Bias (Set to give) :
△
T=100
℃
4.3.5 Temperature Cycling Test (TCT)
‧
Reference Standard
MIL STD 883E 1010.7
TCT
Operation spec.
(QWRAD-7113)
‧
Condition:
Temperature:
Test Point:
Tmin.= -65
℃
, Tmax.=150
℃
,
△
T=215
℃
0, 1000 cycles
Nominal
4.3.6 Pressure Cooker Test (PCT)
‧
Reference Standard
JESD22-A102C
PCT
Operation spec.
(QWRAD-7110)
‧
Condition:
Temperature:
121
℃
Relative Humidity:
100% R.H.
Pressure:
2 atm
Test Point:
0, 168 Hours Nominal
4.3.7 Thermal Shock Test (TST)
‧
Reference Standard
MIL STD 883E 1011.9
TST
Operation spec. (
QWRAD-7112)
‧
Condition:
Temperature:
Test Point:
Tmin.= -65
℃
, Tmax.=150
℃
,
△
T=215
℃
0, 100 Cycles Nominal
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
Advanced Power Electronics Corp.
Report No.
R-09402-01
Total page:
8
of 8
4.3.8
Highly Accelerated Stress Test (HAST)
‧
Reference Standard
JESD22-A118
‧
Condition:
Temperature:
130
℃
Relative Humidity:
85% R.H.
Pressure:
33.3 psia / 230kPa
0, 96 Hours Nominal
Test Point:
The information contained herein is the exclusive property of Advanced Power Electronics Corp. (APEC),
and shall not be distributed, reproduced, or disclosed in whole or in part without written permission of
APEC.
