APEC-Advanced-Power-Elec-AP4451GYT-HF
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AP4451GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
-30V
14.5m
Ω
-13.1A
D
S
▼
Small Size & Lower Profile
▼
RoHS Compliant & Halogen-Free
G
D
D
Description
D
D
AP4451 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
S
The PMPAK
®
3×3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
S
S
G
PMPAK
®
3×3
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
-30
Gate-Source Voltage
+20
V
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
3
Pulsed Drain Current
1
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
-13.1
A
-10.5
A
-50
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3.57
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Value
Unit
℃
/W
℃
/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
5
Rthj-a
35
Data and specifications subject to change without notice
1
201501293
AP4451GYT-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Test Conditions
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-10A
V
GS
=0V, I
D
=-250uA
-30
–
–
V
–
–
11.5 14.5
m
Ω
V
GS
=-4.5V, I
D
=-6A
19
-1.7
17
–
25
m
Ω
V
V
GS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-10A
V
DS
=-24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-10A
-1
–
-3
g
fs
–
S
I
DSS
I
GSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
–
-10
–
–
+100
Q
g
–
14
5
22.4
Q
gs
Q
gd
t
d(on)
t
r
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
V
DS
=-15V
–
–
–
–
–
–
–
V
GS
=-4.5V
–
5
V
DS
=-15V
–
10
5.5
42
30
I
D
=-1A
–
t
d(off)
t
f
Turn-off Delay Time
Fall Time
R
G
=3.3
Ω
–
V
GS
=-10V
–
C
iss
Input Capacitance
V
GS
=0V
–
1250 2000
pF
pF
Ω
C
oss
C
rss
R
g
Output Capacitance
V
DS
=-15V
–
–
–
420
210
–
–
.
Reverse Transfer Capacitance
Gate Resistance
f=1.0MHz
f=1.0MHz
7.2 14.4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Units
V
SD
t
rr
Forward On Voltage
2
I
S
=-2.9A, V
GS
=0V
–
–
–
–
-1.2
V
Reverse Recovery Time
I
S
=-10A,
V
GS
=0
V
,
28
20
–
–
ns
nC
Q
rr
Reverse Recovery Charge
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec, 85
o
C/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4451GYT-HF
50
40
30
20
10
0
50
40
30
20
10
0
T
A
=25
o
C
T
A
= 150
o
C
-10V
-7.0V
-6.0V
-10V
-7.0V
-6.0V
-5.0V
-5.0V
V
G
= -4.0V
V
G
= -4.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
20
16
12
8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
=-10A
V
G
=-10V
I
D
= -6 A
T
A
=25
℃
.
2
4
6
8
10
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS
, Gate-to-Source Voltage (V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
1.6
1.2
0.8
0.4
0.0
I
D
=-250uA
8
6
T
j
=150
o
C
T
j
=25
o
C
4
2
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T
j
, Junction Temperature (
o
C)
-V
SD
, Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4451GYT-HF
f=1.0MHz
2000
1600
1200
800
400
0
10
I
D
= -10 A
V
DS
= -15 V
8
C
iss
6
4
2
0
C
oss
C
rss
0
10
20
30
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
100us
Operation in this area
limited by R
DS(ON)
0.2
10
1ms
0.1
0.1
0.05
0.02
10ms
1
.
0.01
P
DM
100ms
1s
0.01
t
T
Single Pulse
0.1
Duty factor = t/T
T
A
=25
o
C
Peak T
j
= P
DM
x R
thja
+ T
a
DC
R
thia
=85
℃
/W
Single Pulse
0.001
0.01
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t , Pulse Width (s)
-V
DS
, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
G
V
DS
90%
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
t
d(on)
t
r
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4451GYT-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
4451GYT
YWWSSS
Package Code : YT
Date Code (YWWSSS)
Y
：
Last Digit Of
The Year
WW
：
Week
SSS
：
Sequence
.
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : PMPAK
3×3
e
b2
SYMBOLS
Millimeters
1
c 1
MIN
2.90
2.20
0.60
0.20
2.90
0.10
1.20
0.10
0.65
0.00
0.10
2.900
2.900
NOM
MAX
A
B
3.10
3.40
2.80
0.70
0.40
3.40
0.50
2.20
0.65
1.05
0.20
0.25
3.600
3.600
g
2.45
e
0.65
c 4
C
b2
C
0.30
c 2
3.10
c1
c2
c3
D
0.30
1.70
c 3
0.38
B
0.80
A
d1
E
0.10
A1
0.18
BOTTOM VIEW
A1
c4
g
3.30
3.30
0.20 (ref)
d1
D
.
E
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
3. Thermal PAD and Pin contour is for reference, it may has little difference by option.
Draw No.
M1-YT8-G-v06
PMPAK 3X3
PMPAK3X3 FOOTPRINT
：
3.6mm
1.9mm
1.725mm
2.3mm
3.45mm
.
0.55mm
0.6mm
Pin1
0.4mm
0.25mm
0.65mm
2.35mm
ADVANCED POWER ELECTRONICS COR
P
.
Draw No. M1-YT8-G-v06
1
