APEC-Advanced-Power-Elec-AP4920GM
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AP4920GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
25V
25m
Ω
7A
D2
D2
D1
▼
Low On-resistance
D1
▼
Fast Switching
G2
S2
▼
RoHS Compliant & Halogen-Free
G1
SO-8
S1
Description
AP4920 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D2
S2
D1
S1
G2
G1
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
3
Pulsed Drain Current
1
25
+20
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
7
5.7
A
A
20
A
P
D
@T
A
=25
℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
-55 to 150
-55 to 150
W/
℃
℃
℃
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-amb
Maximum Thermal Resistance, Junction-ambient
3
℃
/W
Data and specifications subject to change without notice
1
201501093
AP4920GM-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
Parameter
Test Conditions
V
GS
=0V, I
D
=250uA
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
25
–
–
0.037
–
–
–
V
Δ
BV
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V/
℃
V
GS
=10V, I
D
=7A
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=5.2A
–
25 m
Ω
35 m
Ω
R
DS(ON)
–
1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS(th)
g
fs
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
3
V
Forward Transconductance
14
–
–
S
I
DSS
Drain-Source Leakage Current
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=20V, V
GS
=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=25V, V
GS
=0V
1
–
25
I
GSS
Q
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
2
Rise Time
V
GS
=+20V, V
DS
=0V
I
D
=7A
–
+100
10.5
1.9
7.5
8
–
–
–
–
–
–
–
–
–
–
Q
gs
Q
gd
t
d(on)
t
r
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
9.5
25
13.5
395
260
105
t
d(off)
t
f
Turn-off Delay Time
Fall Time
R
G
=6
Ω
,V
GS
=10V
R
D
=15
Ω
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
Min. Typ. Max.
Units
A
V
I
S
Continuous Source Current ( Body Diode )
–
–
–
–
1.67
1.2
V
SD
Forward On Voltage
2
T
j
=25
℃
, I
S
=2.1A, V
GS
=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 135
℃
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4920GM-HF
20
15
10
5
20
15
10
5
T
A
=150
o
C
10V
8.0V
6.0V
5.0V
10V
8.0V
6.0V
5.0V
GS
= 4 .0V
T
A
=25
o
C
V
GS
= 4 .0V
V
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
50
40
30
20
10
I
D
=7A
I
D
=7A
1.6
V
GS
=10
T
A
=25
℃
1.4
1.2
1.0
0.8
0.6
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS
(V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP4920GM-HF
8
7
6
5
4
3
2
1
0
3
2
1
0
0
50
100
150
25
50
75
100
125
150
T
c
,Case Temperature (
o
C)
T
c
, Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
Duty Factor = 0.5
0.2
10
0.1
1ms
10ms
100ms
1s
0.1
0.05
1
0.02
0.01
P
DM
0.01
t
T
0.1
Single Pulse
10s
Duty Factor = t/T
T
A
=25
o
Single Pulse
C
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
DC
0.01
0.001
0.0001
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP4920GM-HF
f=1.0MHz
12
10
8
10000
1000
100
I
D
=7A
V
DS
=15V
Ciss
6
Coss
4
Crss
2
10
0
1
5
9
13
17
21
25
29
0
2
4
6
8
10
12
14
16
18
20
V
DS
(V)
Q
G
, Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
2.5
2
100.00
10.00
1.00
0.10
0.01
T
j
=150
o
C
T
j
=25
o
C
1.5
1
0.5
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
V
SD
(V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP4920GM-HF
V
DS
R
D
90%
V
DS
TO THE
OSCILLOSCOPE
D
0.6x RATED V
DS
R
G
G
10%
V
GS
+
–
S
V
GS
10V
t
d(on)
t
r
t
d(off)
t
f
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
V
G
V
DS
Q
G
TO THE
OSCILLOSCOPE
D
S
4.5V
0.6 x RATED V
DS
Q
GD
Q
GS
G
V
GS
+
1~ 3 mA
–
I
I
D
G
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6
AP4920GM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
4920GM
Package Code
YWWSSS
Date Code (YWWSSS)
Y
：
Last Digit Of
The Year
WW
：
Week
SSS
：
Sequence
7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN
1.35
0.05
0.30
4.80
5.79
3.70
NOM
MAX
A
A1
B
1.55
1.75
0.25
0.51
5.30
6.20
4.10
8
1
7
6
3
5
4
0.15
0.41
E
E1
D
E
5.05
6.00
E1
e
3.90
2
1.27 TYP
0.21
G
F
0.17
0.38
0°
0.25
1.27
8°
0.83
e
α
4°
B
A
1.All Dimension Are In Millimeters.
A1
2.Dimension Does Not Include Mold Protrusions.
.
α
G
F
Draw No.
M1-M8-G-v03
SO-8
SO-8 FOOTPRINT
：
1.27mm
4.1mm
6.2mm
2.1mm
0.7mm
.
ADVANCED POWER ELECTRONICS COR
P
.
Draw No. M1-M8-G-v03
