APEC-Advanced-Power-Elec-AP9477GK
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AP9477GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
60V
90m
Ω
4.1A
D
▼
Lower Gate Charge
S
▼
Fast Switching Characteristic
D
▼
RoHS Compliant & Halogen-Free
SOT-223
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
S
G
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
+20
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
4.1
A
3.3
A
20
A
P
D
@T
A
=25
℃
Total Power Dissipation
2.8
W
Linear Derating Factor
0.02
W/
℃
℃
℃
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
45
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
℃
/W
Data and specifications subject to change without notice
1
201007292
AP9477GK-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
Parameter
Test Conditions
V
GS
=0V, I
D
=250uA
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
60
–
–
0.057
–
–
–
V
∆
BV
DSS
/
∆
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V/
℃
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=4A
–
90
V
GS
=4.5V, I
D
=2A
–
0.8
–
–
–
110
2.5
–
m
Ω
V
V
GS(th)
g
fs
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4A
Forward Transconductance
Drain-Source Leakage Current
4
–
S
I
DSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
DS
=60V, V
GS
=0V
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=48V ,V
GS
=0V
–
1
–
–
25
I
GSS
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
2
Rise Time
V
GS
=+20V, V
DS
=0V
I
D
=4A
–
–
+100
Q
g
–
6.5 10.5
Q
gs
Q
gd
t
d(on)
t
r
V
DS
=48V
–
1.5
3.5
5
–
–
–
–
–
–
V
GS
=4.5V
V
DS
=30V
–
–
I
D
=1A
–
6
t
d(off)
t
f
Turn-off Delay Time
Fall Time
R
G
=3.3
Ω
,V
GS
=10V
R
D
=30
Ω
–
17
3.5
–
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
=0V
–
510 820
V
DS
=25V
–
55
40
–
–
f=1.0MHz
f=1.0MHz
–
–
1.2
1.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Units
V
SD
t
rr
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=2.1A, V
GS
=0V
I
S
=4A,
V
GS
=0
V
,
dI/dt=100A/µs
–
–
–
–
1.3
V
27
31
–
–
ns
nC
Q
rr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 150
℃
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9477GK-HF
20
16
12
8
20
16
12
8
T
A
=25
o
C
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
10V
7.0V
5.0V
4.5V
V
G
=3.0V
4
4
V
G
=3.0V
0
0
0
2
4
6
8
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.2
1.8
1.4
1.0
0.6
110
100
90
I
D
= 4 A
I
D
= 2 A
V
G
=10V
T
A
=25
o
C
Ω
80
70
60
2
4
6
8
10
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS
, Gate-to-Source Voltage (V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
160.0
135.0
110.0
85.0
6
4
2
0
T
j
=150
o
C
T
j
=25
o
C
V
GS
=4.5V
V
GS
=10V
60.0
0
0.4
0.8
1.2
0
4
8
12
16
20
I
D
, Drain Current
(A)
V
SD
, Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP9477GK-HF
f=1.0MHz
12
10000
1000
100
10
I
D
=4A
V
DS
=32V
8
V
DS
=40V
DS
=48V
C
iss
V
6
4
2
0
C
oss
C
rss
10
0
4
8
12
16
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
10
0.1
0.1
100us
0.05
1
0.02
1ms
0.01
P
DM
10ms
100ms
t
0.01
Single Pulse
T
0.1
Duty factor = t/T
1s
T
A
=25
o
C
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 150
℃
/W
Single Pulse
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
15
10
5
V
G
V
DS
=5V
Q
G
T
j
=25
o
C
T
j
=150
o
C
4.5V
Q
GD
Q
GS
Q
Charge
0
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
